KR102297750B9 - 고품질 SiC 단결정 성장방법 - Google Patents
고품질 SiC 단결정 성장방법Info
- Publication number
- KR102297750B9 KR102297750B9 KR1020190119631A KR20190119631A KR102297750B9 KR 102297750 B9 KR102297750 B9 KR 102297750B9 KR 1020190119631 A KR1020190119631 A KR 1020190119631A KR 20190119631 A KR20190119631 A KR 20190119631A KR 102297750 B9 KR102297750 B9 KR 102297750B9
- Authority
- KR
- South Korea
- Prior art keywords
- silicon carbide
- high quality
- crystal growth
- carbide crystal
- quality silicon
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
- C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020190119631A KR102297750B1 (ko) | 2019-09-27 | 2019-09-27 | 고품질 SiC 단결정 성장방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020190119631A KR102297750B1 (ko) | 2019-09-27 | 2019-09-27 | 고품질 SiC 단결정 성장방법 |
Publications (3)
Publication Number | Publication Date |
---|---|
KR20210037789A KR20210037789A (ko) | 2021-04-07 |
KR102297750B1 KR102297750B1 (ko) | 2021-09-03 |
KR102297750B9 true KR102297750B9 (ko) | 2022-05-10 |
Family
ID=75469705
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020190119631A KR102297750B1 (ko) | 2019-09-27 | 2019-09-27 | 고품질 SiC 단결정 성장방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR102297750B1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114232095B (zh) * | 2021-11-22 | 2023-03-03 | 浙江大学杭州国际科创中心 | 一种优化碳化硅籽晶表面初期成核的方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103620095B (zh) * | 2011-08-29 | 2017-02-15 | 新日铁住金株式会社 | 碳化硅单晶基板及其制造方法 |
JP2014205593A (ja) * | 2013-04-12 | 2014-10-30 | 住友電気工業株式会社 | 炭化珪素単結晶およびその製造方法 |
KR101537385B1 (ko) * | 2013-12-05 | 2015-07-17 | 재단법인 포항산업과학연구원 | 탄화규소(SiC) 단결정 성장 방법 |
JP6334253B2 (ja) * | 2014-05-15 | 2018-05-30 | 昭和電工株式会社 | 炭化珪素単結晶インゴットの加工方法 |
-
2019
- 2019-09-27 KR KR1020190119631A patent/KR102297750B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR102297750B1 (ko) | 2021-09-03 |
KR20210037789A (ko) | 2021-04-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP3547349A4 (en) | METHOD FOR REDUCING DISLOCATION DENSITY OF SILICON CARBIDE EPITAXIAL BASAL PLANE | |
EP3547350A4 (en) | METHOD FOR REDUCING THE INFLUENCE OF BASAL LEVEL SHIFTING ON A SILICON CARBIDE EPITAXIAL LAYER | |
EP3330415A4 (en) | PROCESS FOR PREPARING AN EPITACTIC SILICON CARBIDE CRYSTAL WAFERS | |
EP3026147A4 (en) | SILICON CARBIDE MONOCRYSTAL WAFER AND PROCESS FOR PRODUCING MONOCRYSTAL SILICON CARBIDE INGOT | |
EP3561158A4 (en) | PROCESS FOR CULTURING A LARGE DIAMETER MONOCCRYSTALLINE SILICON CARBIDE INGOT | |
EP3260582A4 (en) | Method for producing silicon carbide single crystal ingot and silicon carbide single crystal ingot | |
EP3763853A4 (en) | SILICON CARBIDE MONOCRISTAL PRODUCTION PROCESS | |
IL288131A (en) | Production of laboratory grown diamonds | |
EP3690085A4 (en) | PROCESS FOR THE PRODUCTION OF A SINGLE CRYSTAL OF SILICON CARBIDE | |
EP3936643A4 (en) | METHOD AND DEVICE FOR MANUFACTURING A SIC SUBSTRATE | |
EP3260581A4 (en) | Method for producing silicon carbide single crystal epitaxial wafer and silicon carbide single crystal epitaxial wafer | |
EP4012078A4 (en) | SEED CRYSTAL SEED OF SIC AND PRODUCTION METHOD THEREFOR, SIC INGOT PRODUCED BY GROWING SAID SEED CRYSTAL SEED OF SIC AND PRODUCTION METHOD THEREFOR, AND SIC WAFER PRODUCED FROM SAID SIC INGOT AND EPITAXIAL FILM SIC WAFER AND METHODS RESPECTIVE PRODUCTION RESPECTS OF SAID SIC WAFER AND SAID EPITAXIAL FILM SIC WAFER | |
EP3812488A4 (en) | DEVICE FOR GROWING A SINGLE CRYSTAL OF SILICON CARBIDE AND METHOD FOR PRODUCTION OF A SINGLE CRYSTAL OF SILICON CARBIDE | |
EP3388560B8 (en) | Method for preparing sic single crystal | |
EP3257974A4 (en) | Epitaxial growth method for silicon carbide | |
EP3978657A4 (en) | GERMANIUM SINGLE CRYSTAL WAFER, METHOD OF MAKING A GERMANIUM SINGLE CRYSTAL WAFER, METHOD OF MAKING A CRYSTAL ROD AND USE OF A SINGLE CRYSTAL WAFER | |
KR102297750B9 (ko) | 고품질 SiC 단결정 성장방법 | |
EP4170073A4 (en) | HIGH-QUALITY SILICON CARBIDE SEED, SILICON CARBIDE CRYSTAL, SILICON CARBIDE SUBSTRATE AND PREPARATION METHOD THEREFOR | |
GB201909676D0 (en) | Method of manufacture of single crystal synthetic diamond material | |
EP4056739C0 (en) | METHOD FOR GROWING HIGH QUALITY SINGLE CRYSTAL SILICON CARBIDE | |
EP3767016A4 (en) | PROCESS FOR THE PRODUCTION OF A SINGLE CRYSTAL OF SILICON CARBIDE | |
SG11202111451WA (en) | Methods for growing a single crystal silicon ingot using continuous czochralski method | |
TWI799980B (zh) | 用於製備碳化矽單晶的裝置 | |
EP3666935A4 (en) | HIGH PURITY SILICON CARBIDE MONOCRISTALLINE SUBSTRATE AND PROCESS FOR PREPARATION | |
GB201915562D0 (en) | Apparatus for the adjustment of spacing between growing plants |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AMND | Amendment | ||
E601 | Decision to refuse application | ||
X091 | Application refused [patent] | ||
AMND | Amendment | ||
X701 | Decision to grant (after re-examination) | ||
GRNT | Written decision to grant | ||
G170 | Re-publication after modification of scope of protection [patent] |