SG11202010737UA - Use of compositions comprising a solvent mixture for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below - Google Patents

Use of compositions comprising a solvent mixture for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

Info

Publication number
SG11202010737UA
SG11202010737UA SG11202010737UA SG11202010737UA SG11202010737UA SG 11202010737U A SG11202010737U A SG 11202010737UA SG 11202010737U A SG11202010737U A SG 11202010737UA SG 11202010737U A SG11202010737U A SG 11202010737UA SG 11202010737U A SG11202010737U A SG 11202010737UA
Authority
SG
Singapore
Prior art keywords
compositions
line
solvent mixture
pattern collapse
space dimensions
Prior art date
Application number
SG11202010737UA
Other languages
English (en)
Inventor
Marcel Brill
Daniel Loeffler
Yeni Burk
Frank Pirrung
Lothar Engelbrecht
Szilard Csihony
Maike Bergeler
Volodymyr Boyko
Patrick Wilke
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG11202010737UA publication Critical patent/SG11202010737UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2003—Alcohols; Phenols
    • C11D3/2006—Monohydric alcohols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2003—Alcohols; Phenols
    • C11D3/2006—Monohydric alcohols
    • C11D3/201—Monohydric alcohols linear
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2093—Esters; Carbonates
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/266—Esters or carbonates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG11202010737UA 2018-05-25 2019-05-13 Use of compositions comprising a solvent mixture for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below SG11202010737UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP18174211 2018-05-25
PCT/EP2019/062178 WO2019224032A1 (en) 2018-05-25 2019-05-13 Use of compositions comprising a solvent mixture for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

Publications (1)

Publication Number Publication Date
SG11202010737UA true SG11202010737UA (en) 2020-12-30

Family

ID=62386071

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202010737UA SG11202010737UA (en) 2018-05-25 2019-05-13 Use of compositions comprising a solvent mixture for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

Country Status (9)

Country Link
US (1) US20210198602A1 (ja)
EP (1) EP3802768A1 (ja)
JP (2) JP2021525388A (ja)
KR (1) KR20210015801A (ja)
CN (1) CN112135899B (ja)
IL (1) IL278848A (ja)
SG (1) SG11202010737UA (ja)
TW (1) TWI834671B (ja)
WO (1) WO2019224032A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10382772B1 (en) 2018-07-02 2019-08-13 Tencent America LLC Method and apparatus for video coding
US10284844B1 (en) * 2018-07-02 2019-05-07 Tencent America LLC Method and apparatus for video coding
KR20230015920A (ko) 2020-05-27 2023-01-31 바스프 에스이 50nm 이하의 라인-공간 치수를 갖는 패턴화된 재료를 처리할 때 패턴 붕괴를 회피하기 위한 암모니아 및 알칸올로 이루어지는 조성물의 용도

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3978255B2 (ja) * 1997-06-24 2007-09-19 Ａｚエレクトロニックマテリアルズ株式会社 リソグラフィー用洗浄剤
KR100594815B1 (ko) * 1999-12-24 2006-07-03 삼성전자주식회사 포토레지스트 린스용 씬너 및 이를 이용한 포토레지스트막의 처리 방법
JP4045180B2 (ja) * 2002-12-03 2008-02-13 Ａｚエレクトロニックマテリアルズ株式会社 リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法
CN101010639A (zh) * 2004-09-01 2007-08-01 东京应化工业株式会社 光蚀刻用冲洗液和抗蚀图案形成方法
US20080299487A1 (en) 2007-05-31 2008-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography material and lithography process
JP5537859B2 (ja) * 2009-07-31 2014-07-02 富士フイルム株式会社 化学増幅型レジスト組成物によるパターン形成用の処理液及びそれを用いたレジストパターン形成方法
PT2309331E (pt) * 2009-10-09 2012-02-23 Flexoclean Engineering B V Solvente de lavagem de polímero e sua utilização para revelação de uma placa de impressão flexográfica
JP5422497B2 (ja) * 2010-06-23 2014-02-19 株式会社東芝 基板乾燥方法
SG187959A1 (en) 2010-08-27 2013-03-28 Advanced Tech Materials Method for preventing the collapse of high aspect ratio structures during drying
RU2584204C2 (ru) * 2011-01-25 2016-05-20 Басф Се Применение поверхностно-активных веществ, содержащих по меньшей мере три короткоцепочечные перфторированные группы, для производства микросхем, имеющих рисунки с расстояниями между линиями менее 50 нм
JP2012181523A (ja) * 2011-02-28 2012-09-20 Rohm & Haas Electronic Materials Llc 現像剤組成物、およびフォトリソグラフィパターンを形成する方法
JP6027779B2 (ja) 2012-06-11 2016-11-16 メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 リソグラフィー用現像またはリンス液およびそれを用いたパターン形成方法
KR102167993B1 (ko) * 2012-06-22 2020-10-21 아반토 퍼포먼스 머티리얼즈, 엘엘씨 ＴｉＮ 패턴 붕괴를 방지하기 위한 린싱 용액
SG11201504607QA (en) * 2012-12-14 2015-07-30 Basf Se Use of compositions comprising a surfactant and a hydrophobizer for avoiding anti pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below
EP3060642B1 (en) * 2013-10-21 2019-11-06 FujiFilm Electronic Materials USA, Inc. Cleaning formulations for removing residues on surfaces
JP6371057B2 (ja) * 2013-12-27 2018-08-08 東京応化工業株式会社 パターン形成方法
CN104049476B (zh) * 2014-05-30 2017-11-14 青岛华仁技术孵化器有限公司 光刻胶剥离剂
US9494700B2 (en) 2014-06-13 2016-11-15 Seabed Geosolutions B.V. Node locks for marine deployment of autonomous seismic nodes
KR101617169B1 (ko) * 2015-07-17 2016-05-03 영창케미칼 주식회사 포토리소그래피용 세정액 조성물 및 이를 이용한 포토레지스트 패턴의 형성방법
WO2017057255A1 (ja) * 2015-09-30 2017-04-06 富士フイルム株式会社 偏光板保護フィルム、その製造方法、偏光板及び画像表示装置
US10162265B2 (en) * 2015-12-09 2018-12-25 Rohm And Haas Electronic Materials Llc Pattern treatment methods
JP2017138514A (ja) * 2016-02-04 2017-08-10 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 表面処理用組成物およびそれを用いたレジストパターンの表面処理方法
US20230167381A1 (en) * 2017-11-28 2023-06-01 Basf Se Composition comprising a primary and a secondary surfactant, for cleaning or rinsing a product
US20220187712A1 (en) * 2019-04-16 2022-06-16 Basf Se Composition for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below comprising a boron-type additive

Also Published As

Publication number Publication date
CN112135899B (zh) 2022-10-25
CN112135899A (zh) 2020-12-25
JP2024079733A (ja) 2024-06-11
TW202003826A (zh) 2020-01-16
KR20210015801A (ko) 2021-02-10
EP3802768A1 (en) 2021-04-14
TWI834671B (zh) 2024-03-11
WO2019224032A8 (en) 2020-12-03
US20210198602A1 (en) 2021-07-01
WO2019224032A1 (en) 2019-11-28
JP2021525388A (ja) 2021-09-24
IL278848A (en) 2021-01-31

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