SG11202010737UA - Use of compositions comprising a solvent mixture for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below - Google Patents

Use of compositions comprising a solvent mixture for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

Info

Publication number
SG11202010737UA
SG11202010737UA SG11202010737UA SG11202010737UA SG11202010737UA SG 11202010737U A SG11202010737U A SG 11202010737UA SG 11202010737U A SG11202010737U A SG 11202010737UA SG 11202010737U A SG11202010737U A SG 11202010737UA SG 11202010737U A SG11202010737U A SG 11202010737UA
Authority
SG
Singapore
Prior art keywords
compositions
line
solvent mixture
pattern collapse
space dimensions
Prior art date
Application number
SG11202010737UA
Inventor
Marcel Brill
Daniel Loeffler
Yeni Burk
Frank Pirrung
Lothar Engelbrecht
Szilard Csihony
Maike Bergeler
Volodymyr Boyko
Patrick Wilke
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG11202010737UA publication Critical patent/SG11202010737UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2003—Alcohols; Phenols
    • C11D3/2006—Monohydric alcohols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2003—Alcohols; Phenols
    • C11D3/2006—Monohydric alcohols
    • C11D3/201—Monohydric alcohols linear
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2093—Esters; Carbonates
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/266—Esters or carbonates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG11202010737UA 2018-05-25 2019-05-13 Use of compositions comprising a solvent mixture for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below SG11202010737UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP18174211 2018-05-25
PCT/EP2019/062178 WO2019224032A1 (en) 2018-05-25 2019-05-13 Use of compositions comprising a solvent mixture for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

Publications (1)

Publication Number Publication Date
SG11202010737UA true SG11202010737UA (en) 2020-12-30

Family

ID=62386071

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202010737UA SG11202010737UA (en) 2018-05-25 2019-05-13 Use of compositions comprising a solvent mixture for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

Country Status (9)

Country Link
US (1) US20210198602A1 (en)
EP (1) EP3802768A1 (en)
JP (2) JP2021525388A (en)
KR (1) KR20210015801A (en)
CN (1) CN112135899B (en)
IL (1) IL278848A (en)
SG (1) SG11202010737UA (en)
TW (1) TWI834671B (en)
WO (1) WO2019224032A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10284860B1 (en) 2018-07-02 2019-05-07 Tencent America LLC Method and apparatus for video coding
US10284844B1 (en) * 2018-07-02 2019-05-07 Tencent America LLC Method and apparatus for video coding
EP4158678A1 (en) 2020-05-27 2023-04-05 Basf Se Use of a composition consisting of ammonia and an alkanol for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3978255B2 (en) * 1997-06-24 2007-09-19 Ａｚエレクトロニックマテリアルズ株式会社 Lithographic cleaning agent
KR100594815B1 (en) * 1999-12-24 2006-07-03 삼성전자주식회사 thinner for rinsing photoresist and method of treating photoresist layer
JP4045180B2 (en) * 2002-12-03 2008-02-13 Ａｚエレクトロニックマテリアルズ株式会社 Rinsing liquid for lithography and resist pattern forming method using the same
KR20070058560A (en) * 2004-09-01 2007-06-08 토쿄오오카코교 가부시기가이샤 Rinsing liquid for lithography and method for resist pattern formation
US20080299487A1 (en) 2007-05-31 2008-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography material and lithography process
JP5537859B2 (en) * 2009-07-31 2014-07-02 富士フイルム株式会社 Treatment liquid for pattern formation by chemically amplified resist composition and resist pattern formation method using the same
RS52204B (en) * 2009-10-09 2012-10-31 Flexoclean Engineering B.V. A polymer washout solvent and the use thereof for developing a flexographic printing plate
JP5422497B2 (en) * 2010-06-23 2014-02-19 株式会社東芝 Substrate drying method
CN103081072A (en) 2010-08-27 2013-05-01 高级技术材料公司 Method for preventing the collapse of high aspect ratio structures during drying
MY161218A (en) * 2011-01-25 2017-04-14 Basf Se Use of surfactants having at least three short-chain perfluorinated groups rf for manufacturing integrated circuits having patterns with line-space dimensions below 50nm
JP2012181523A (en) * 2011-02-28 2012-09-20 Rohm & Haas Electronic Materials Llc Developer composition and method of forming photolithographic pattern
JP6027779B2 (en) * 2012-06-11 2016-11-16 メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 Lithographic development or rinsing solution and pattern forming method using the same
WO2013192534A1 (en) * 2012-06-22 2013-12-27 Avantor Performance Materials, Inc. Rinsing solution to prevent tin pattern collapse
CN104871289B (en) * 2012-12-14 2017-10-10 巴斯夫欧洲公司 Composition comprising surfactant and hydrophobizers avoids the purposes of pattern collapse when handling the patterning materials that line spacing dimensions are 50nm or lower
KR102153113B1 (en) * 2013-10-21 2020-09-08 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. Cleaning formulations for removing residues on surfaces
JP6371057B2 (en) * 2013-12-27 2018-08-08 東京応化工業株式会社 Pattern formation method
CN104049476B (en) * 2014-05-30 2017-11-14 青岛华仁技术孵化器有限公司 Light carving rubber stripper
US9494700B2 (en) 2014-06-13 2016-11-15 Seabed Geosolutions B.V. Node locks for marine deployment of autonomous seismic nodes
KR101617169B1 (en) * 2015-07-17 2016-05-03 영창케미칼 주식회사 Cleaning composition for photolithography and method for forming photoresist pattern using the same
WO2017057255A1 (en) * 2015-09-30 2017-04-06 富士フイルム株式会社 Polarizing plate protective film, method for manufacturing same, polarizing plate, and image display device
US10162265B2 (en) * 2015-12-09 2018-12-25 Rohm And Haas Electronic Materials Llc Pattern treatment methods
JP2017138514A (en) * 2016-02-04 2017-08-10 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ Composition for surface treatment and surface treatment method of resist pattern using the same
KR20200084045A (en) * 2017-11-28 2020-07-09 바스프 에스이 Compositions comprising primary and secondary surfactants for cleaning or rinsing the product
KR20210154971A (en) * 2019-04-16 2021-12-21 바스프 에스이 Compositions that avoid pattern collapse upon processing of patterned materials having line-spacing dimensions of 50 nm or less comprising boron type additives

Also Published As

Publication number Publication date
CN112135899A (en) 2020-12-25
EP3802768A1 (en) 2021-04-14
WO2019224032A1 (en) 2019-11-28
TWI834671B (en) 2024-03-11
TW202003826A (en) 2020-01-16
US20210198602A1 (en) 2021-07-01
JP2024079733A (en) 2024-06-11
JP2021525388A (en) 2021-09-24
KR20210015801A (en) 2021-02-10
IL278848A (en) 2021-01-31
WO2019224032A8 (en) 2020-12-03
CN112135899B (en) 2022-10-25

Similar Documents

Publication Publication Date Title
IL278848A (en) Use of compositions comprising a solvent mixture for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below
IL274193A (en) Use of compositions comprising a siloxane-type additive for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below
IL287201A (en) Composition for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below comprising a boron-type additive
IL267141A (en) Patterning of liquid crystals using soft-imprint replication of surface alignment patterns
MA45397A (en) COMPOUNDS, COMPOSITIONS AND PROCESSES TO INCREASE THE ACTIVITY OF CFTR
BR112016017165A2 (en) CYCLOPENTENE OR CYCLOPENTADIENE COMPOUNDS, AGRICULTURAL OR VETERINARY COMPOSITION, USE OF A COMPOUND AND METHOD FOR PROTECTING THE MATERIAL
SG10201604551XA (en) Cleaning Composition for Photolithography and Method of Forming Photoresist Pattern Using the Same
JP2015528812A5 (en)
EP3774743C0 (en) Prodrug compounds activated by akr1c3 and their use for treating hyperproliferative disorders
EP3500349A4 (en) Bioremediation composition with time-release materials for removing energetic compounds from contaminated environments
IL287024A (en) Composition comprising an ammonia-activated siloxane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below
MA50448A (en) AROMATIC SULPHONAMIDE DERIVATIVES FOR THE TREATMENT OF ISCHEMIC Cerebral Injury
BR112017002610A2 (en) functionalized silica with elastomer binder
EP3440044A4 (en) Tri-carboxylic compounds as low-voc coalescing agents and plasticizing agents
ZA201800662B (en) Process for creating patterns on the surface of a composition based on hydraulic binder by printing
EP3109703A4 (en) Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting
IL273544A (en) Compositions and methods for preventing collapse of high aspect ratio structures during drying
ITUB20161016A1 (en) PHARMACEUTICAL OR COSMETIC COMPOSITIONS INCLUDING A POLYMER AND AN ABSORPTION PROMOTER FOR THE CONTROLLED RELEASE OF ACTIVE PRINCIPLES
ES1283404Y (en) Ergonomic accessory for the use of masks.
Liu et al. The application of ionic liquid composite materials in denitrification from flue gas
GB201704384D0 (en) N-((3,4,5-Trimethoxystyryl)aryl) cinnamamide compounds as potential anticancer agents and process for the preparation thereof
LT3820644T (en) Process of nanostructuring the surface of a material by laser
ES1190059Y (en) PAINTING PALETTE FOR USE BY PERSONS WITH VISUAL DISABILITIES
EP3814140A4 (en) Nonplanar patterned nanostructured surface and printing methods for making thereof
PL25940S2 (en) Handle