SG11202010737UA - Use of compositions comprising a solvent mixture for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below - Google Patents

Use of compositions comprising a solvent mixture for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

Info

Publication number
SG11202010737UA
SG11202010737UA SG11202010737UA SG11202010737UA SG11202010737UA SG 11202010737U A SG11202010737U A SG 11202010737UA SG 11202010737U A SG11202010737U A SG 11202010737UA SG 11202010737U A SG11202010737U A SG 11202010737UA SG 11202010737U A SG11202010737U A SG 11202010737UA
Authority
SG
Singapore
Prior art keywords
compositions
line
solvent mixture
pattern collapse
space dimensions
Prior art date
Application number
SG11202010737UA
Inventor
Marcel Brill
Daniel Loeffler
Yeni Burk
Frank Pirrung
Lothar Engelbrecht
Szilard Csihony
Maike Bergeler
Volodymyr Boyko
Patrick Wilke
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG11202010737UA publication Critical patent/SG11202010737UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • C11D2111/22—
SG11202010737UA 2018-05-25 2019-05-13 Use of compositions comprising a solvent mixture for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below SG11202010737UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP18174211 2018-05-25
PCT/EP2019/062178 WO2019224032A1 (en) 2018-05-25 2019-05-13 Use of compositions comprising a solvent mixture for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

Publications (1)

Publication Number Publication Date
SG11202010737UA true SG11202010737UA (en) 2020-12-30

Family

ID=62386071

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202010737UA SG11202010737UA (en) 2018-05-25 2019-05-13 Use of compositions comprising a solvent mixture for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

Country Status (8)

Country Link
US (1) US20210198602A1 (en)
EP (1) EP3802768A1 (en)
JP (1) JP2021525388A (en)
KR (1) KR20210015801A (en)
CN (1) CN112135899B (en)
IL (1) IL278848A (en)
SG (1) SG11202010737UA (en)
WO (1) WO2019224032A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10284844B1 (en) * 2018-07-02 2019-05-07 Tencent America LLC Method and apparatus for video coding
US10382772B1 (en) 2018-07-02 2019-08-13 Tencent America LLC Method and apparatus for video coding
CN115668447A (en) 2020-05-27 2023-01-31 巴斯夫欧洲公司 Use of a composition consisting of ammonia and an alkanol for avoiding pattern collapse when processing patterned materials with a line-to-line pitch dimension of 50nm or less

Family Cites Families (23)

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KR100594815B1 (en) * 1999-12-24 2006-07-03 삼성전자주식회사 thinner for rinsing photoresist and method of treating photoresist layer
JP4045180B2 (en) * 2002-12-03 2008-02-13 Ａｚエレクトロニックマテリアルズ株式会社 Rinsing liquid for lithography and resist pattern forming method using the same
CN101010639A (en) * 2004-09-01 2007-08-01 东京应化工业株式会社 Rinsing liquid for lithography and method for resist pattern formation
US20080299487A1 (en) 2007-05-31 2008-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography material and lithography process
JP5537859B2 (en) * 2009-07-31 2014-07-02 富士フイルム株式会社 Treatment liquid for pattern formation by chemically amplified resist composition and resist pattern formation method using the same
EP2309331B1 (en) * 2009-10-09 2012-01-25 Flexoclean Engineering B.V. A polymer washout solvent and the use thereof for developing a flexographic printing plate
JP5422497B2 (en) * 2010-06-23 2014-02-19 株式会社東芝 Substrate drying method
TWI559387B (en) 2010-08-27 2016-11-21 恩特葛瑞斯股份有限公司 Method for preventing the collapse of high aspect ratio structures during drying
SG191738A1 (en) * 2011-01-25 2013-08-30 Basf Se Use of surfactants having at least three short-chain perfluorinated groups for manufacturing integrated circuits having patterns with line-space dimensions below 50nm
JP2012181523A (en) * 2011-02-28 2012-09-20 Rohm & Haas Electronic Materials Llc Developer composition and method of forming photolithographic pattern
JP6027779B2 (en) * 2012-06-11 2016-11-16 メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 Lithographic development or rinsing solution and pattern forming method using the same
WO2013192534A1 (en) * 2012-06-22 2013-12-27 Avantor Performance Materials, Inc. Rinsing solution to prevent tin pattern collapse
KR102209867B1 (en) * 2012-12-14 2021-01-29 바스프 에스이 Use of compositions comprising a surfactant and a hydrophobizer for avoiding anti pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below
CN105849245B (en) * 2013-10-21 2020-03-13 富士胶片电子材料美国有限公司 Cleaning formulation for removing residues on surfaces
JP6371057B2 (en) * 2013-12-27 2018-08-08 東京応化工業株式会社 Pattern formation method
CN104049476B (en) * 2014-05-30 2017-11-14 青岛华仁技术孵化器有限公司 Light carving rubber stripper
US9494700B2 (en) 2014-06-13 2016-11-15 Seabed Geosolutions B.V. Node locks for marine deployment of autonomous seismic nodes
KR101617169B1 (en) * 2015-07-17 2016-05-03 영창케미칼 주식회사 Cleaning composition for photolithography and method for forming photoresist pattern using the same
WO2017057255A1 (en) * 2015-09-30 2017-04-06 富士フイルム株式会社 Polarizing plate protective film, method for manufacturing same, polarizing plate, and image display device
US10162265B2 (en) * 2015-12-09 2018-12-25 Rohm And Haas Electronic Materials Llc Pattern treatment methods
JP2017138514A (en) * 2016-02-04 2017-08-10 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ Composition for surface treatment and surface treatment method of resist pattern using the same
JP7349985B2 (en) * 2017-11-28 2023-09-25 ビーエーエスエフ ソシエタス・ヨーロピア A composition comprising a first surfactant and a second surfactant for cleaning or rinsing a product
US20220187712A1 (en) * 2019-04-16 2022-06-16 Basf Se Composition for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below comprising a boron-type additive

Also Published As

Publication number Publication date
CN112135899A (en) 2020-12-25
KR20210015801A (en) 2021-02-10
TW202003826A (en) 2020-01-16
EP3802768A1 (en) 2021-04-14
US20210198602A1 (en) 2021-07-01
IL278848A (en) 2021-01-31
WO2019224032A8 (en) 2020-12-03
JP2021525388A (en) 2021-09-24
CN112135899B (en) 2022-10-25
WO2019224032A1 (en) 2019-11-28

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