SG11202002496PA - Titanium sputtering target, production method therefor, and method for producing titanium-containing thin film - Google Patents

Titanium sputtering target, production method therefor, and method for producing titanium-containing thin film

Info

Publication number
SG11202002496PA
SG11202002496PA SG11202002496PA SG11202002496PA SG11202002496PA SG 11202002496P A SG11202002496P A SG 11202002496PA SG 11202002496P A SG11202002496P A SG 11202002496PA SG 11202002496P A SG11202002496P A SG 11202002496PA SG 11202002496P A SG11202002496P A SG 11202002496PA
Authority
SG
Singapore
Prior art keywords
titanium
thin film
sputtering target
containing thin
production method
Prior art date
Application number
SG11202002496PA
Other languages
English (en)
Inventor
Shuhei Murata
Daiki Shono
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11202002496PA publication Critical patent/SG11202002496PA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C22F1/18—High-melting or refractory metals or alloys based thereon
    • C22F1/183—High-melting or refractory metals or alloys based thereon of titanium or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C14/00—Alloys based on titanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
SG11202002496PA 2017-09-21 2018-07-13 Titanium sputtering target, production method therefor, and method for producing titanium-containing thin film SG11202002496PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017181694A JP7179450B2 (ja) 2017-09-21 2017-09-21 スパッタリング用チタンターゲット及びその製造方法、並びにチタン含有薄膜の製造方法
PCT/JP2018/026595 WO2019058721A1 (ja) 2017-09-21 2018-07-13 スパッタリング用チタンターゲット及びその製造方法、並びにチタン含有薄膜の製造方法

Publications (1)

Publication Number Publication Date
SG11202002496PA true SG11202002496PA (en) 2020-04-29

Family

ID=65809743

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202002496PA SG11202002496PA (en) 2017-09-21 2018-07-13 Titanium sputtering target, production method therefor, and method for producing titanium-containing thin film

Country Status (8)

Country Link
US (2) US20200240005A1 (ko)
EP (1) EP3686313A4 (ko)
JP (1) JP7179450B2 (ko)
KR (3) KR20220137779A (ko)
CN (1) CN111108231A (ko)
SG (1) SG11202002496PA (ko)
TW (1) TWI695894B (ko)
WO (1) WO2019058721A1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7368798B2 (ja) 2019-12-25 2023-10-25 国立大学法人豊橋技術科学大学 純チタン金属材料の加工方法
CN113652526B (zh) * 2021-07-21 2023-02-17 先导薄膜材料有限公司 一种靶材的热处理淬火方法
CN114717528B (zh) * 2022-04-06 2023-09-08 宁波江丰电子材料股份有限公司 一种含钛靶材及其制备方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5772860A (en) * 1993-09-27 1998-06-30 Japan Energy Corporation High purity titanium sputtering targets
JP3413782B2 (ja) * 1995-03-31 2003-06-09 日立金属株式会社 スパッタリング用チタンタ−ゲットおよびその製造方法
JP2706635B2 (ja) * 1995-06-07 1998-01-28 真空冶金株式会社 スパッタリング用高純度チタンターゲット及びその製造方法
TW388069B (en) * 1996-01-25 2000-04-21 Sumitomo Sitix Corp Titanium target for use in sputtering and manufacture thereof
JPH1150244A (ja) * 1997-08-05 1999-02-23 Riyouka Massey Kk スパッタリングターゲット材およびその製造方法
US6045634A (en) * 1997-08-14 2000-04-04 Praxair S. T. Technology, Inc. High purity titanium sputtering target and method of making
US6423161B1 (en) * 1999-10-15 2002-07-23 Honeywell International Inc. High purity aluminum materials
US6878250B1 (en) * 1999-12-16 2005-04-12 Honeywell International Inc. Sputtering targets formed from cast materials
JP2004527650A (ja) 2000-10-12 2004-09-09 ハネウェル・インターナショナル・インコーポレーテッド スパッタリングターゲット材の製造方法
RU2224046C1 (ru) * 2002-06-05 2004-02-20 Институт проблем сверхпластичности металлов РАН Способ изготовления листовых полуфабрикатов из технического титана
US20070144623A1 (en) * 2004-02-18 2007-06-28 Wickersham Charles E Jr Ultrasonic method for detecting banding in metals
WO2005080623A1 (ja) 2004-02-25 2005-09-01 Rinascimetalli Ltd. 金属加工方法及び金属体
JP4970550B2 (ja) * 2007-12-18 2012-07-11 Ｊｘ日鉱日石金属株式会社 酸化チタンを主成分とする薄膜、酸化チタンを主成分とする薄膜の製造に適した焼結体スパッタリングターゲット及び酸化チタンを主成分とする薄膜の製造方法
WO2011111373A1 (ja) * 2010-03-11 2011-09-15 株式会社 東芝 スパッタリングターゲットとその製造方法、および半導体素子の製造方法
JP5420609B2 (ja) * 2010-08-25 2014-02-19 Ｊｘ日鉱日石金属株式会社 スパッタリング用チタンターゲット
WO2014038487A1 (ja) 2012-09-04 2014-03-13 国立大学法人電気通信大学 部材の製造方法および生体材料
US10431438B2 (en) 2013-03-06 2019-10-01 Jx Nippon Mining & Metals Corporation Titanium target for sputtering and manufacturing method thereof
JP6595188B2 (ja) 2015-02-06 2019-10-23 株式会社東芝 スパッタリングターゲットの製造方法

Also Published As

Publication number Publication date
TW201915187A (zh) 2019-04-16
JP2019056151A (ja) 2019-04-11
KR20200055038A (ko) 2020-05-20
JP7179450B2 (ja) 2022-11-29
EP3686313A1 (en) 2020-07-29
EP3686313A4 (en) 2021-08-25
KR20220008380A (ko) 2022-01-20
KR102365363B1 (ko) 2022-02-23
KR20220137779A (ko) 2022-10-12
CN111108231A (zh) 2020-05-05
US20200240005A1 (en) 2020-07-30
TWI695894B (zh) 2020-06-11
US20220162743A1 (en) 2022-05-26
WO2019058721A1 (ja) 2019-03-28

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