TW388069B - Titanium target for use in sputtering and manufacture thereof - Google Patents

Abstract

The pesent invention is to provide a titanium target for use in sputtering which has a high efficiency in forming film inside the contact hole. The crystal on the target surface is so oriented that the X line diffraction strength of (10-10) and/or (11/20) vertical to the densest loading surfacee becomes 1.1 times of the random orientation, and the X line diffraction strength of (0002) parallel to the densest loading surface becomes less than one time. The direction of sputering particles jetted out of the target surface is controled to be vertical to said target surface.

Description

Printed by the Central Government Bureau of the Ministry of Economic Affairs and Consumer Cooperatives A7 B7___ V. Invention Description (,) [Industrial Use Field] The present invention is used in the teaching of semiconductor devices such as LSI and ULSI for the purpose of A titanium target for radiation, which is a thin film such as a wiring material, and a method for manufacturing the same. [Knowledgeable technology] In recent years, due to the rapid increase in the density of LSIs, the "polar materials" used in LSI or ULSI have gradually been replaced with low-roughness coarse-grained materials. The polysilicon is used to solve the signal delay caused by the linearization of the nickel and nickel. The materials used in LSI and ULSI are nickel, ion and ferrite materials such as "tungsten" or "tungsten" or "silicon". Among them, titanium, which has excellent specific strength (heavy director: strength), processability, and contact resistance, is the best. When using titanium to form a semiconducting dysprosium electrode, the epitaxial method is usually used. However, the high-purity titanium used in this stage shot method is usually produced in the following manner. The vacuum-dissolved method such as EB (radion beam emission) dissolution is used to dissociate the refined by iodide thermal decomposition method or decomposition method. The titanium material is dissolved, and then processed by casting, satin, calendering, heat treatment, etc. to form a plate-shaped target. Recently, 轚 has used the mineralization method to really crack the titanium titanium precipitation method. However, it has been studied by funders. It is the above-mentioned "dissolving" method. However, the use of this titanium "Hunger Shooting Method" is said to produce "uneven film thickness variations" due to the different shooting efficiencies of «B's crystal grains". Therefore, the crystal grains of titanium are generally made into the body, so that the orientation of the scabs is averaged. The calendering and heat treatment are performed by the melting method. However, with the recent increase in density, the width of nickel with it has become very large (please read the note on the back before filling in this page). China National Standards (CNS) A4 (210X297 mm) A7 B7 Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs of the People's Republic of China 5. Inventory (>) is narrow, so in the titanium alloy whose crystal orientation is averaged As shown in Fig. 1 (4), the sputtered particles from this «have no directivity, and therefore the sputtering toward the trench called a contact hole» becomes very difficult to form a film. One of the countermeasures is shown in Figure 1 (B), which uses a ® V. collimator between the substrate and the target. However, in this method, many haze particles from this range will be attached to the collimator. Therefore, the number of 18 particles to the hafnium substrate will be greatly reduced, so there is a problem that the sputtering efficiency is significantly reduced. . Therefore, the examinee recently has the technique of aligning the direction of the sputtered particles from the as shown in 圏 1 (c), which is shown in Japanese Patent Application Laid-Open No. 5-2 1 4 5 2 1 A kind of crystalline structure is based on the view that the sputtered particles are easy to scatter to the most dense filling direction of the crystal & 'The case is considered to be a preferential orientation centered on (002) that is parallel to its closest filling surface. . [Problems to be Solved by the Invention] FIG. 2 shows the crystal structure of titanium at room temperature. As the parallel plane for the densest filling surface is (002) > and the vertical plane for the densest filling surface is (10-10) and (11-20), etc. In the Japanese patent case to be leveled Among the titanium targets disclosed in 5-214521, it is believed that the ytterbium crystals are strongly oriented at (0022) * Since titanium targets manufactured by general dissolution methods are also processed at relatively low temperatures, they have the same orientation However, the conventional method of making the crystal grain size thinner "After investigation by the present inventors, it is found that compared with the uncontrolled crystal grain size, the flying direction of the sputtered particles is more uniform, but it is When it is called ditch sputtering with holes, its film formation efficiency is lower than those without rolling. This is because of sputtering (please read the precautions on the back before filling this page) Paper size applies Chinese National Standard (CNS) A4 (210X297 mm) Printed by the Central Bureau of Standards, Ministry of Economic Affairs, Shellfish Consumer Cooperative, A7 _B7__ V. Description of the invention ()) The direction of the jet ’s flying failure is not controlled for Caused by the vertical direction. That is, when sputtering toward a trench called a contact hole, it is necessary to control the scattering direction of the ejection particles so as to be perpendicular to the substrate to be formed. Therefore, it is required to control the sputtered particles on the beam. The scattering direction is perpendicular to the surface of the target, but in the conventional "B" extension, the flying direction of its 8-shot particles is not controlled as this required direction, because it is controlled as required by the public. Different directions, so the number of shot particles reaching the bottom of the contact hole will decrease significantly. The object of the present invention is to provide titanium for sputtering and its cracking method, which controls the direction of the ejection particles flying out of the target surface to be perpendicular to the surface of the target [Method for solving the problem] For the purpose, the inventors investigated the crystalline orientation of the target surface and the "two shots of the direction of the shooting particle" flying out from the surface, and found that the shot particles that are parallel to the most densely filled plane are more likely to fly away, If the crystal structure is strongly oriented as (10-10) and (11-20) perpendicular to the closest filling plane, the scattering efficiency of the projectile particles will deviate, and the direction of the flying failure will be controlled to be perpendicular to the target surface. 》 For the titanium target of the present invention, you use the crystal structure of the target surface formed by the substrate formed by the epitaxial film, and the X-rays of the most densely filled "surfaces that are vertical (1 0-1 0) and / or (11-20) Diffraction intensity is 1.1 times or more when randomly oriented, it is best to have X-ray diffraction intensity parallel to the closest filling plane (200 × 2) or less than 1 time when machine oriented. Applicable to China National Standard (CNS) Α4 (210X297mm) (Please read the back first Note: Please fill in this page again.) Pack. Order A7 B7 Printed by the Central Consumers' Bureau of the Ministry of Economic Affairs of the People's Republic of China. 5. Description of the invention () • 1 In the titanium target of the present invention 9 its crystal orientation conversion (10- 10) The X-ray diffraction intensity of each of X 1 (1 1-20) and (0 0 0 2) is specified. Here, the ratio of 1 when the eaves are oriented at 1 μM (hereinafter referred to as the diffraction intensity ratio) indicates each X Please direct the 1 1 line radio intensity of the driller's orientation. This refers to the situation where the X-ray diffractometer is used to fill the sample holder used by the 1 1 with m fine crystal powder. The back is 1 1 1 • Note that the 1 I projectile particles are shown as _ 3 > When the most dense filling surface is perpendicular to the (1 0-10) 1 term, and Γ 1 1 and (1 1-20) are the target surface, t The vertical direction of the target surface § Write 1 I It is easier to fly away. I want to control the direction of the failure of the m-ray particles. If the front face of the cost page is vertical, the m-ray intensity bb 1 1 of at least one of (1 0- 1 0) and (11-20) must be 1.1 times or more * It is better to make the diffraction intensity ratio of (0002) more For m 1 1 1, the strongest direction of the plane perpendicular to the closest filling surface is to be 0. The optimal diffraction intensity ratio of the former is 2.0 or more. The optimal intensity ratio of the latter 1 is 0. 5 and the following f is better if one of (1 0-10) and (11 -20)-1 1 is inferior to the diffraction intensity ratio of both parties to be 1.1 to 9 and especially 1 to both parties. 0 is the most ideal. 0: 1 | The general knowledge has been subjected to the solution of S Yan. The house fails to meet this condition. 0 X 1 is sufficient to meet this condition. Those who are qualified 霈 霈 pay attention to the direction of the change of the material. 1 1 Measures to reduce the rolling ratio than conventionally known »or to increase the rolling ratio of B, etc. 〇 [Implementation Mode of the Invention I 1 The manufacturing method of the present invention is described below according to the embodiment of the present invention. 0 1 The first titanium target cracking method of the present invention. You add X to the final transformation point to make a strong processing at a degree below 1 1 • The processing degree is 50X or more » In order to make the surface along the 1 I processing direction become a target surface-β adopts titanium 靼 9 mainly 僳 adopts 1 1 1 1 1 1 This paper is used in China National Standard (CNS) A4 size (210X297 (Mm) A7 B7 V. Description of the invention (f) as the "refined" In the conventional molten titanium "Zhi Di" • its final processing is processed to a thickness of less than the point of the ribs. For example, the "It is the surface that makes its forging direction vertical. That is, the surface of the satin material is used as the target surface. However, when processing with the following set of abnormal viscosity, (0002) is oriented in the processing direction. Therefore, the "knowledge of dissolution" is to make (0002) oriented to the face. On the other hand, in the method for producing the first titanium «of the present invention, first, the rough machining is carried out with a roughness equal to or less than that of the metamorphosis». Therefore, as shown in Blue 4 (A), (0002) is strongly oriented as a vertical plane with respect to the processing direction. Then, the surface along the processing direction (preferably the surface parallel to the processing direction) can be made into a «plane. By taking titanium, you can get "Titanium which is lifted on the surface (1 卜 1Q) and / or (11-20)". The reason for orienting (0 0 0 2) in the machining direction when processing with a thickness below the stiffening point is as follows. The field of titanium below the metamorphic point is the densest hexagonal crystal structure (hcp), and its plastic deformation eaves structure has two types: dynamic deformation and double crystal deformation. Generally, for the plastic deformation of the metal, the sliding deformation is The contribution is more overwhelming than the deformation of the twin crystals. A large part of the plastic deformation of blunt titanium is also borne by the »dynamic deformation. The deformation of titanium is dominated by the cylindrical surface of (1〇-1〇) < 11_2〇 > because the #moving direction is < 11-20 > and is located in the bottom surface, so the deformation in the C_ direction cannot be achieved. As a result of the systematic activities, the orientation of the vertical (0002) plane of the C-car is strong in the machining direction (the direction in which the force is applied). In the first titanium target manufacturing method of the present invention, the lower the processing thickness, the better. The paper size is in accordance with China National Standard (CNS) A4 (210X297 mm). Please read the note on the back and fill out this Page.i. Order printed by the Consumer Cooperatives of the Central Economic and Technical Bureau of the Ministry of Economic Affairs. Printed by the Central Government Bureau of the Ministry of Economic Affairs. Printed on the Industrial and Consumer Cooperatives. A7 B7. 5. Description of the invention. Can "for maximum effect. In terms of processability, in order to improve the orientation, the larger the better, it is better to be above 70X. For the titanium target, the processing method is best to use satin fabric or preliminary rolling to ensure that It still has a large thickness in the processing direction β. The manufacturing method of the second titanium of the present invention is to use the final processing in the area above the metamorphic viscosity to perform a strong processing with a processing degree of 50 × or more. The surface is used as the target surface. This method has always been the final processing at high rents. At this time, as shown in country 4 (B), (0002) is randomly oriented, and part of the result (10-10) and / or (11-20) is oriented in the processing direction. Therefore, since the plane that intersects the machining direction (preferably the plane perpendicular to the machining direction) is used as the "plane, the orientation of U0-10 on target surface and / or (1-20) can be improved. If processing is performed at a temperature above the abnormal point (2002), the reason for being oriented by the machine is as follows. Since the field above the abnormal point is a center-centered cubic crystal structure (bcc), the crystal is oriented in the direction of the body-centered cubic crystal structure during processing in the field. However, because the material junction is cooled in a certain shape Therefore, in its metamorphosis, from the core-cube structure (bcc) to the densest hexagonal structure (hcp), it is pseudo-perverted from the Burgers HI. At this time, the 6 value (101) b is transformed into (0 0 0 1) h, so (0 0 0 2) is oriented by the machine. In the processing of the second titanium target manufacturing method of the present invention, if it is carried out with extreme extremes, it will be severely changed, so the degree below 1000 * 0 _ 8-This paper size applies Chinese national standards ( CNS) A4 size (210X297 mm) (Please read the precautions on the back before filling out this page) Equipment · Printed by the Central Government Bureau of the Ministry of Economic Affairs and printed by the Industrial and Consumer Cooperatives Α7 Β7 5. The invention description (7) is appropriate. The degree of processing is "the larger the better for mechanization, the better the beta is 70X or more." In the third titanium target manufacturing method of the present invention, the final processing is performed with abnormal deformation and the powerful processing with a processing degree of 50 × or more is performed, so that the surface where the processing directions intersect can be made of titanium. What this method has to do is to process it when it passes the abnormal point. At this time, as shown in Figure 4 (C), (10-10) and / or (11-20) are strongly oriented in the processing direction. Therefore, the box makes the surface where the processing direction intersects (preferably the processing direction is perpendicular) Surface > Titanium rhenium can be used as a target surface, and (10-10) and / or (11-20) can be obtained for titanium with the 淝 face strongly oriented. The reason for -10) and / or (11-20) being strongly oriented is as follows; as in the case of the second method, when processing in the / 6 area above the metamorphic viscosity, the crystal is oriented in the body-centered cubic structure. In the 1 direction, if 彡 -metamorphism occurs during processing, it is said that only 1 value (10 1) b in 6 fe (101) b will be transformed into (0 00 1). The priority position at this time is (0 0 0 2 ) Is oriented perpendicular to the processing direction, so the vertical (10-10) and (11-20) of (0002) are oriented in the processing direction. The third titanium target manufacturing method of the present invention is processed. To improve the orientation, the lower the temperature at the end of the process, the better. It is best to finish the process at 70 ° C or lower. In order to prevent the "chemical, the temperature at the beginning of the process is preferably 1000. In terms of processability, in order to improve the directivity, the larger the better, the best is 70 × or less. Any of the titanium hafnium cracking methods of the present invention uses cross-calendering and the paper size is applicable to Chinese national standards (CNS) ) Α4 wash grid (210X297 mm) (Please read the notes on the back before filling in this page) Order the Central Ministry of Economic Affairs 扃 Paperwork Consumer Cooperative Co., Ltd. Printing A7 B7 V. Invention Description (S) Uniform film thickness distribution during shooting. As a result, the number of particles reaching the bottom surface of the contact hole will also increase. Cross rolling refers to moving the material to the cross direction of the ® extension direction (preferably each «moving 45 · 8 of 8" Value direction) and the technology of calendering. If the other calendering conditions are the same, the X-ray diffraction intensity of the material being rolled in one direction and the X-ray flicker intensity of the material cross-rolled will be approximately the same. "But If you look at the 毎 -value crystal, the 毎 -value crystal of a material extended in one direction will be affected by the direction of the KE extension to a certain direction. As a result, when used for sputtering «, the scattering direction of the particles will meet to Neat, so that its film thickness becomes non-uniform. • Cross-rolling makes the direction of the crystals «Eaves, Di can alleviate the effect of the direction of the ® direction, and can achieve uniform film thickness. In any of the titanium of the present invention" In the manufacturing method, heat treatment is performed to refine the crystal grains after the final processing, which is very effective for controlling the direction of the ejected particles. It is preferable that the particle diameter is 500 # or less, and more preferably 100 or less. If 50 # · The following residence is particularly good "[Example] The following is to explain the embodiment of the present invention," comparison with the comparative example, showing the effect of the present invention "When using the commercially available titanium ion purity" Di material for sputtering In the case of targets, the processing conditions in Table 1 were used to control the crystal orientation of the target. Table 2 shows the produced titanium «crystal orientation on the surface. The X-ray projection intensity is expressed by the ratio of the X-ray projection intensity of each position of the titanium powder to 1. -10- This paper size adopts Chinese National Standard (CNS) A4 specification (210X297 mm) -------- ^ ------ install-(Please read the note on the back first ^ ^ Write this tile) Order

X A7 B7 5. Description of the Invention (9) Furthermore, sputtering was performed using the produced titanium target. A contact hole having a width of 1.0 # · χdepth of 2.0 # · is set on the surface of the substrate. The average film thickness of the thin film obtained by sputtering is about 500 A (10 Θ cm) β. Table 3 shows the film formation speed, film thickness distribution, and step coverage of the contact holes in the parts other than the pores. The results are expressed in terms of (average film thickness / sputtering time) and (maximum film thickness-minimum film thickness) / (average film thickness X2) X100U). In addition, (average film thickness on the bottom of pore-run / average film thickness on the outside of pore-run) X100 (X) represents the step coverage of contact holes "(please read the note on the back before filling this page) 1Τ Ministry of Economy Printed by the Central Bureau of Standards for Shellfish Consumer Cooperatives «. -11- This paper is scaled to the Chinese National Standard (CNS) Α4 size (210X297 mm) 5. Description of the invention (—) A7 B7 Cooperative printing [Table 1] No Target material processing conditions 1 (thin material)-^ 900 · 〇 forging-♦ 500 * 0 rolling (reduction rate: 7〇χ)-♦ cut out (A) 2 (»making Material >-* 500 * 0 grade manufacturing (processing rate: 50ί)-> cut out (a) 3 (β discus) —500 * (3 forging (processing rate: 50X)-»cut out (B) 4 (»Materials) — 50 (TC grade (Processing rate: 50X) — Cut out (C) 5 (» Materials)-»90ITC Forging-+ 950-08 extension (S down rate: 70X) • ♦ Cut out (A) 6 (casting material)-* 90 (TC remodeling-> 900 ° 0 calendering (K down rate: 70X) —cut out (A) 7 (»making material) -900 * 0 forging- ♦ 950 ° CK extension (cross, reduction rate: 70X)-* cut out (A > 8 (βbuilding material > —900 * 0 »made -* 95 0 * 0 rolling (reduction rate: 70X)-♦ 800 * C cooked «cutting-♦ cut out (A) 9 (casting material)-» 900 * C satin made-»950 * C rolling (reduction Rate: 70X)-* 7 0 0 * C heat treatment cut out (A) 10 (casting material)-»900eC satin-made-» 950 ° 〇® extension (K down rate: 70 magic-► 60 0 * C heat * treatment Cut-out (Α > Cut-out (A) Cut-out (B) Cut-out (C > Area target 0 0 is the area surface area leIB is the area area of the surface area 45 is the straight line in the vertical direction to the square -Η Η Plus 12 plus plus _ Yu and the pairing into the cut cut paper standard applicable Chinese National Standard (CNS) A4 wash grid (2 丨 0X297 mm) ^^ 1- ^^ 1 m I Γ— i —-----II (Please read the notes on the back f to write this page) Order A7 B7 V. Description of the invention (Table 2)

No. (100) * (002) * (101) * (102) * (110) * (103) * (112) * (201) * 1 0.7 2.5 0.8 0.6 0.4 1.5 0.7 0.5 2 1.1 1.5 1.1 0.7 0.5 1.0 1.1 0.4 3 1.0 0.6 0.9 0.9 1.2 0.9 0.8 0.7 4 0.9 0.8 1.2 0.8 1.0 0.7 1.0 0.8 5 0.8 0.6 1.4 0.7 2.4 0.6 0.9 0.8 6 2.5 0.5 1.0 0.4 2.0 0.6 0.8 0.7 7 0.9 0.7 1.1 0.7 2.1 0.5 0.8 0.8 8 0.8 0.5 1.2 0.6 2.0 0.6 0.9 0.9 9 0.8 0.6 1.4 0.7 2.2 0.8 0.8 0.7 10 0.7 0.5 1.3 0.7 2.1 0.7 0.8 0.9 (Please read the notes on the back before filling out this page) Printing (*) (100) = (10-10), (002) = (0002) (101) = (10-11), (102) = (10-12) (110) = (11-20) , (103) = (10-13) (112) = (11-22), (201) = (20-21) -13- This paper size applies to China Gujia standard (CNS > A4 size (210X297) (%) A7 B7 V. Description of the invention (—) Printed by the Central Government Bureau of the Ministry of Economic Affairs, printed by the Shellfish Consumer Cooperative [Table 3] No. Film-forming speed (η / s) Film thickness distribution (X) Step distance coverage of the holes Ye Fanyuan (X) 1 1.5 17 28 2 1.4 18 32 3 1.8 14 45 4 1.7 15 38 5 2.0 12 4 7 6 2.4 10 55 7 2.2 12 57 8 2. 1 9 5 1 9 2.2 7 62 1 0 2.2 6 6 5 " 14- (Please read the notes on the back before filling out this page) f * vs This paper size applies Chinese national standards ( CNS) A4 specifications (2 丨 0X297 mm) A7 B7__ 5. Description of the invention (β)

No. 1 is a melting sacrifice made by ordinary processing. That is, rolling is performed at 500 * C below the abnormal point, and normal cutting is performed with the plane (K-extended plane) perpendicular to the processing direction as the »plane❶ because the crystal of * ί plane is strongly oriented at (0002), Therefore, the film formation speed, film thickness uniformity, and the step coverage of the contact holes are low.

Do.2 ~ 4 傈 Satin is made with the final processing below the abnormal point. • The surface perpendicular to the processing direction is used as the »surface and Ho.2 is often cut out. Because No.l also (0 0 0 2 ) The strong orientation is on the target surface, so its film formation speed, film thickness uniformity and step coverage are low. In contrast, the surface cut out by Ho.3 parallel to the processing direction can become a "face, so (11-20) is more strongly oriented on the" face, and (10-10) has also been oriented. " Trend, therefore, its film-forming speed, film thickness uniformity, and grade coverage are all increased. No. 4, which cuts out 45 · in the processing direction, is also faster than U0.2 in film-forming speed, Film thickness uniformity and step coverage Fan Yuan have been improved. "Printed by the Shellfish Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before filling this page)

No. 5 is a strong rolling in the > 8 area above the metamorphic viscosity, and then the usual cut out. Using the usual cutout to (11-20) a strong directional target surface, «I significantly improved the film formation speed, film thickness uniformity and step coverage >>

No. 6 is from the point of metamorphosis> 90 in the 5 field (TC to 80 below the point of metamorphosis. TC is used for strong rolling. Β is usually cut out by (10-10) and (1 1-2 (〇 Strong The orientation is on the rake surface, and its film formation speed, film thickness uniformity and step coverage are even more improved.

No.7 is No.5 after 15 days of strong rolling in the area of metamorphosis above -15- This paper size is not used in China's solid kneading rate (CNS) A4 size (210X297 mm) Printed by the employee consumer cooperative «. 388069 a7 _B7_ V. Description of the invention (4), using cross-rollers. Although the directivity on the surface is reduced, the uniformity of film thickness and the range coverage range are improved. No. 8 to 10 are those in which Y is heat-treated in order to withdraw and refine the crystal grains after the final processing of No. 5. The crystal grain size was 500 Lu ·, No. 9 was 100 > u ·, and No. 10 was 50 # ·. "The size of the crystal grains is reduced to improve the uniformity of the film thickness and the range coverage. In addition, in Nos. 3, 5, and 6, the diffraction intensity ratio of (10-10) and (11-20) Wenfang will be 2.0 or more, and the diffraction intensity ratio of (0002) will be Ho less than 0.5. The characteristics of .6 are particularly good. In addition, although the above-mentioned embodiments are melted, they can also be used for the above-mentioned precipitation targets.

[Effect of the Invention I As mentioned above, the titanium for still shooting according to the present invention «because of the orientation of (1 0-1 0) and (1 1-2 0 >] perpendicular to the most dense filling surface of the present invention has a strongly oriented surface The crystalline structure, so the direction of the "flying particles" flying out of the »is controlled in the direction perpendicular to the« plane, and it can also perform fine film formation on the step-by-step coverage of narrow and deep contact holes. Therefore, it is beneficial for half The density of the brewing device is high. In addition, the titanium target for sputtering can be easily fabricated according to the manufacturing method of the present invention. [A brief description attached] Η1 is a pattern circle used to indicate contact holes. It becomes Θ. 圔 2 is a chess-type country, which is used to indicate the crystal structure of titanium. 圔 3 is a wedge-shaped garden, which is used to indicate the direction of the flying particles. 飞 4 is a chess-type 臛, which is used to indicate the processing conditions and Orientation-1 6 * This paper size applies to China National Standard (CNS) Α4 size (210X297 mm) HI ϋ ϋ —J —J n— Shidong I — Γ (Please read the notes on the back before filling (This page) * 1T '

Claims (1)

Patent No. 85102980 "Titanium Target for Sputtering and Its Manufacturing Method" (Amended on December 9, 88) A. Application scope of patent: ^ --.-- ^ —— * (Please read the note on the back before reading ≪ ^ page 1. A titanium target for sputtering, which is used for sputtering for forming a thin film on a substrate surface, and is characterized in that as a crystalline structure facing a target surface facing the substrate surface, it is most closely packed with (10-10) and / or (11-20) whose X-ray diffraction intensity is 1.1 times or more when randomly oriented "2. If the titanium target for sputtering in item 1 of the patent application scope, Among them, the diffraction intensity of X-rays parallel to the closest filling surface is (200) less than 1 time when randomly oriented. 3.-A manufacturing method of a titanium target for sputtering, which is used to make The titanium target for sputtering used in the scope of patent application No. 1 or 2 is characterized by the most painful n in the _ metamorphic irm: 11 lean lines plus n strong processing to more than to%, so that along the processing The surface of the direction can become the target surface and adopt the titanium target. Line-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4. A manufacturing method of titanium target for sputtering, used to make The application of titanium rhenium for sputtering in the profit range of item 1 or 2 is characterized in that the final processing is performed at a temperature above the abnormal point for a strong processing with a processing degree of 50% or more, and the surface energy that crosses the processing direction can be Take the titanium target as the target surface. 5.-A method for manufacturing a titanium target for sputtering, which is used to manufacture the titanium target for sputtering applied for in the scope of patent application No. 1 or 2, which is characterized by the final processing edge The paper size processed through yS-a abnormal point is more than 50%. The Chinese paper standard (CNS) A4 (210X297 mm) is applicable. Patent No. 85102980 "Titanium Target for Sputtering and Its Manufacturing Method" (Amended on December 9, 88) A. Application scope of patent: ^ --.-- ^ —— * (Please read the note on the back before reading ≪ ^ page 1. A titanium target for sputtering, which is used for sputtering for forming a thin film on a substrate surface, and is characterized in that as a crystalline structure facing a target surface facing the substrate surface, it is most closely packed with (10-10) and / or (11-20) whose X-ray diffraction intensity is 1.1 times or more when randomly oriented "2. If the titanium target for sputtering in item 1 of the patent application scope, Among them, the diffraction intensity of X-rays parallel to the closest filling surface is (200) less than 1 time when randomly oriented. 3.-A manufacturing method of a titanium target for sputtering, which is used to make The titanium target for sputtering used in the scope of patent application No. 1 or 2 is characterized by the most painful n in the _ metamorphic irm: 11 lean lines plus n strong processing to more than to%, so that along the processing The surface of the direction can become the target surface and adopt the titanium target. Line-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4. A manufacturing method of titanium target for sputtering, used to make The application of titanium rhenium for sputtering in the profit range of item 1 or 2 is characterized in that the final processing is performed at a temperature above the abnormal point for a strong processing with a processing degree of 50% or more, and the surface energy that crosses the processing direction can be Take the titanium target as the target surface. 5.-A method for manufacturing a titanium target for sputtering, which is used to manufacture the titanium target for sputtering applied for in the scope of patent application No. 1 or 2, which is characterized by the final processing edge The paper size processed through yS-a abnormal point is more than 50%. The Chinese paper standard (CNS) A4 (210X297 mm) is applicable. 77. Scope of patent application Strong processing, so that the surface that intersects with the processing direction can become a titanium target. 6. The manufacturing method according to any one of claims 3 to 5, wherein the strong processing is a cross-roller. 7. The manufacturing method according to any one of claims 3 to 5, wherein a heat treatment is applied to miniaturize crystal grains after final processing. 8. The manufacturing method according to item 6 of the patent application, wherein a heat treatment is applied to miniaturize the crystal grains after the final processing. ------..- I .-- ^ —— (Please read the precautions on the back before filling in the page) Order II Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Employee Consumer Cooperatives Paper size of this paper Use the national rubbing rate of China (CNS) A4 specification (210X297 mm)