SG11201913459RA - Metrology targets and methods with oblique periodic structures - Google Patents

Metrology targets and methods with oblique periodic structures

Info

Publication number
SG11201913459RA
SG11201913459RA SG11201913459RA SG11201913459RA SG11201913459RA SG 11201913459R A SG11201913459R A SG 11201913459RA SG 11201913459R A SG11201913459R A SG 11201913459RA SG 11201913459R A SG11201913459R A SG 11201913459RA SG 11201913459R A SG11201913459R A SG 11201913459RA
Authority
SG
Singapore
Prior art keywords
methods
periodic structures
metrology targets
oblique periodic
oblique
Prior art date
Application number
SG11201913459RA
Other languages
English (en)
Inventor
Feler Yoel
Mark Ghinovker
Alexander Svizher
Vladimir Levinski
Inna Tarshish-Shapir
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11201913459RA publication Critical patent/SG11201913459RA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
SG11201913459RA 2018-01-12 2018-11-29 Metrology targets and methods with oblique periodic structures SG11201913459RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862617086P 2018-01-12 2018-01-12
PCT/US2018/062931 WO2019139685A1 (en) 2018-01-12 2018-11-29 Metrology targets and methods with oblique periodic structures

Publications (1)

Publication Number Publication Date
SG11201913459RA true SG11201913459RA (en) 2020-07-29

Family

ID=67218346

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201913459RA SG11201913459RA (en) 2018-01-12 2018-11-29 Metrology targets and methods with oblique periodic structures

Country Status (7)

Country Link
US (1) US11137692B2 (ja)
JP (2) JP2021511532A (ja)
KR (1) KR102408316B1 (ja)
CN (1) CN111542784A (ja)
SG (1) SG11201913459RA (ja)
TW (1) TWI780291B (ja)
WO (1) WO2019139685A1 (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11256177B2 (en) * 2019-09-11 2022-02-22 Kla Corporation Imaging overlay targets using Moiré elements and rotational symmetry arrangements
JP7288144B2 (ja) * 2019-09-16 2023-06-06 ケーエルエー コーポレイション 周期的半導体デバイス位置ずれ計量システム及び方法
CN112731778B (zh) * 2019-10-28 2022-08-02 长鑫存储技术有限公司 一种半导体套刻精度的控制方法及叠层标记
WO2021158255A1 (en) * 2020-02-07 2021-08-12 Kla Corporation Non-orthogonal target and method for using the same in measuring misregistration of semiconductor devices
CN113539867A (zh) * 2020-04-14 2021-10-22 中国科学院微电子研究所 半导体器件套刻精度的测量方法
CN115428139B (zh) * 2020-04-15 2024-04-12 科磊股份有限公司 可用于测量半导体装置偏移的具有装置级特征的偏移目标
US11604149B2 (en) 2020-04-23 2023-03-14 Kla Corporation Metrology methods and optical schemes for measurement of misregistration by using hatched target designs
CN111508932B (zh) * 2020-04-27 2021-12-14 深圳中科飞测科技股份有限公司 套刻标记及套刻误差的测量方法
KR20240016285A (ko) * 2021-05-31 2024-02-06 에이에스엠엘 네델란즈 비.브이. 계측 측정 방법 및 장치
US11703767B2 (en) * 2021-06-28 2023-07-18 Kla Corporation Overlay mark design for electron beam overlay
WO2023066657A1 (en) * 2021-10-19 2023-04-27 Asml Netherlands B.V. Pattern matching method

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2870461B2 (ja) * 1995-12-18 1999-03-17 日本電気株式会社 フォトマスクの目合わせマーク及び半導体装置
JP2000012445A (ja) * 1998-06-25 2000-01-14 Nikon Corp 位置検出方法及び装置、並びに前記装置を備えた露光装置
JP5180419B2 (ja) * 2000-08-30 2013-04-10 ケーエルエー−テンカー・コーポレーション 重ね合わせマーク、重ね合わせマークの設計方法および重ね合わせ測定の方法
US7068833B1 (en) * 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US7541201B2 (en) 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US6699624B2 (en) * 2001-02-27 2004-03-02 Timbre Technologies, Inc. Grating test patterns and methods for overlay metrology
US7170604B2 (en) * 2002-07-03 2007-01-30 Tokyo Electron Limited Overlay metrology method and apparatus using more than one grating per measurement direction
KR20080096297A (ko) * 2007-04-27 2008-10-30 삼성전자주식회사 반도체 소자의 오버레이 마크
NL2006451A (en) * 2010-05-06 2011-11-08 Asml Netherlands Bv Production of an alignment mark.
US9093458B2 (en) * 2012-09-06 2015-07-28 Kla-Tencor Corporation Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets
JP2015095631A (ja) 2013-11-14 2015-05-18 マイクロン テクノロジー， インク． 半導体装置
US9329495B2 (en) 2013-11-20 2016-05-03 Globalfoundries Inc. Overlay metrology system and method
WO2015124397A1 (en) * 2014-02-21 2015-08-27 Asml Netherlands B.V. Optimization of target arrangement and associated target
KR20230110835A (ko) * 2015-04-21 2023-07-25 케이엘에이 코포레이션 기울어진 디바이스 설계를 위한 계측 타겟 설계
US9864209B2 (en) * 2015-05-19 2018-01-09 Kla-Tencor Corporation Self-moire target design principles for measuring unresolved device-like pitches
NL2017466A (en) 2015-09-30 2017-04-05 Asml Netherlands Bv Metrology method, target and substrate
US10018919B2 (en) * 2016-05-29 2018-07-10 Kla-Tencor Corporation System and method for fabricating metrology targets oriented with an angle rotated with respect to device features
KR102640173B1 (ko) * 2016-06-14 2024-02-26 삼성전자주식회사 회절 기반 오버레이 마크 및 오버레이 계측방법

Also Published As

Publication number Publication date
TW201939171A (zh) 2019-10-01
KR102408316B1 (ko) 2022-06-10
TWI780291B (zh) 2022-10-11
CN111542784A (zh) 2020-08-14
US11137692B2 (en) 2021-10-05
WO2019139685A1 (en) 2019-07-18
JP2022183203A (ja) 2022-12-08
JP2021511532A (ja) 2021-05-06
KR20200099615A (ko) 2020-08-24
US20200124982A1 (en) 2020-04-23

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