SG11201911846TA - Method for producing polysilicon - Google Patents

Method for producing polysilicon

Info

Publication number
SG11201911846TA
SG11201911846TA SG11201911846TA SG11201911846TA SG11201911846TA SG 11201911846T A SG11201911846T A SG 11201911846TA SG 11201911846T A SG11201911846T A SG 11201911846TA SG 11201911846T A SG11201911846T A SG 11201911846TA SG 11201911846T A SG11201911846T A SG 11201911846TA
Authority
SG
Singapore
Prior art keywords
producing polysilicon
polysilicon
producing
Prior art date
Application number
SG11201911846TA
Other languages
English (en)
Inventor
Makoto Kamada
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Publication of SG11201911846TA publication Critical patent/SG11201911846TA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
SG11201911846TA 2017-06-16 2018-06-04 Method for producing polysilicon SG11201911846TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017119125 2017-06-16
PCT/JP2018/021363 WO2018230380A1 (ja) 2017-06-16 2018-06-04 ポリシリコンの製造方法

Publications (1)

Publication Number Publication Date
SG11201911846TA true SG11201911846TA (en) 2020-01-30

Family

ID=64660548

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201911846TA SG11201911846TA (en) 2017-06-16 2018-06-04 Method for producing polysilicon

Country Status (8)

Country Link
US (1) US11512001B2 (zh)
EP (1) EP3640204B1 (zh)
JP (1) JP7023951B2 (zh)
KR (1) KR102462694B1 (zh)
CN (1) CN110799457B (zh)
SG (1) SG11201911846TA (zh)
TW (1) TWI771428B (zh)
WO (1) WO2018230380A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7513572B2 (ja) 2021-07-01 2024-07-09 信越化学工業株式会社 洗浄システム及び洗浄方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4826668A (en) * 1987-06-11 1989-05-02 Union Carbide Corporation Process for the production of ultra high purity polycrystalline silicon
DE102006037020A1 (de) * 2006-08-08 2008-02-14 Wacker Chemie Ag Verfahren und Vorrichtung zur Herstellung von hochreinem polykristallinem Silicium mit reduziertem Dotierstoffgehalt
JP5633142B2 (ja) 2008-11-28 2014-12-03 三菱マテリアル株式会社 多結晶シリコン製造方法及び製造装置
KR20110127120A (ko) 2009-02-04 2011-11-24 가부시끼가이샤 도꾸야마 다결정 규소의 제조법
US20150175430A1 (en) * 2012-07-09 2015-06-25 Tokuyama Corporation Method for Producing Polysilicon
JP6179246B2 (ja) * 2012-07-31 2017-08-16 三菱マテリアル株式会社 多結晶シリコン製造方法及び製造装置
CN102838118A (zh) 2012-09-19 2012-12-26 特变电工新疆硅业有限公司 一种多晶硅尾气干法回收中热能回收工艺及系统
DE102013206236A1 (de) * 2013-04-09 2014-10-09 Wacker Chemie Ag Gasverteiler für Siemens-Reaktor
DE102013209076A1 (de) 2013-05-16 2014-11-20 Wacker Chemie Ag Reaktor zur Herstellung von polykristallinem Silicium und Verfahren zur Entfernung eines Silicium enthaltenden Belags auf einem Bauteil eines solchen Reaktors
KR101895538B1 (ko) 2015-09-08 2018-09-05 한화케미칼 주식회사 폴리실리콘 제조 장치
MY185420A (en) 2015-09-08 2021-05-19 Hanwha Chemical Corp Polysilicon manufacturing apparatus

Also Published As

Publication number Publication date
JP7023951B2 (ja) 2022-02-22
CN110799457A (zh) 2020-02-14
CN110799457B (zh) 2023-07-11
EP3640204B1 (en) 2021-12-15
WO2018230380A1 (ja) 2018-12-20
KR20200019150A (ko) 2020-02-21
JPWO2018230380A1 (ja) 2020-04-23
KR102462694B1 (ko) 2022-11-04
TWI771428B (zh) 2022-07-21
EP3640204A1 (en) 2020-04-22
TW201905252A (zh) 2019-02-01
US20200102223A1 (en) 2020-04-02
US11512001B2 (en) 2022-11-29
EP3640204A4 (en) 2021-04-07

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