MY185420A - Polysilicon manufacturing apparatus - Google Patents

Polysilicon manufacturing apparatus

Info

Publication number
MY185420A
MY185420A MYPI2018700588A MYPI2018700588A MY185420A MY 185420 A MY185420 A MY 185420A MY PI2018700588 A MYPI2018700588 A MY PI2018700588A MY PI2018700588 A MYPI2018700588 A MY PI2018700588A MY 185420 A MY185420 A MY 185420A
Authority
MY
Malaysia
Prior art keywords
reactor
base plate
gas
outside
reaction chamber
Prior art date
Application number
MYPI2018700588A
Inventor
Sung Eun Park
Jiwoong Kim
Hee Dong Lee
Original Assignee
Hanwha Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020160102394A external-priority patent/KR101895538B1/en
Application filed by Hanwha Chemical Corp filed Critical Hanwha Chemical Corp
Publication of MY185420A publication Critical patent/MY185420A/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Abstract

Provided is a polysilicon manufacturing apparatus including a reactor (10) disposed on a base plate (21) to form a reaction chamber (11), a pair of electrical feedthroughs (20) installed on the base plate (21) to be extended to the inside of the reaction chamber (11 ), rod filaments (30) installed on the electrical feedthroughs (20) in the reaction chamber (11) and connected to each other by a rod bridge (31) at the upper end to form a silicon rod by chemical vapor deposition of source gas introduced to a gas inlet (22), and a cooling jacket inserted to a through-hole provided at the upper side of the reactor (10) to be supported to the base plate (21), connected to a gas outlet (23) formed on the base plate (21) by forming a gas passage discharging the gas after reaction, and introducing and circulating a low-temperature coolant to a coolant passage from the outside of the reactor ( 10) by forming the coolant passage at the outside of the gas passage to discharge a high-temperature coolant to the outside of the reactor (10).
MYPI2018700588A 2015-09-08 2016-09-08 Polysilicon manufacturing apparatus MY185420A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR20150126701 2015-09-08
KR1020160102394A KR101895538B1 (en) 2015-09-08 2016-08-11 Polysilicon manufacturing apparatus
PCT/KR2016/010106 WO2017043892A1 (en) 2015-09-08 2016-09-08 Polysilicon manufacturing apparatus

Publications (1)

Publication Number Publication Date
MY185420A true MY185420A (en) 2021-05-19

Family

ID=58240322

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2018700588A MY185420A (en) 2015-09-08 2016-09-08 Polysilicon manufacturing apparatus

Country Status (2)

Country Link
MY (1) MY185420A (en)
WO (1) WO2017043892A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102462694B1 (en) 2017-06-16 2022-11-04 가부시끼가이샤 도꾸야마 Method for producing polysilicon

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8399072B2 (en) * 2009-04-24 2013-03-19 Savi Research, Inc. Process for improved chemcial vapor deposition of polysilicon
KR101115697B1 (en) * 2009-12-02 2012-03-06 웅진폴리실리콘주식회사 Cvd reactor with energy efficient thermal-radiation shield
KR20130019183A (en) * 2011-08-16 2013-02-26 (주)세미머티리얼즈 Poly silicon deposition device
KR101279414B1 (en) * 2011-08-17 2013-06-27 (주)세미머티리얼즈 Apparatus for manufacturing polycrystalline silicon and method for manufacturing polycrystalline
WO2013138461A1 (en) * 2012-03-14 2013-09-19 Centrotherm Photovoltaics Usa, Inc. Trichlorosilane production

Also Published As

Publication number Publication date
WO2017043892A1 (en) 2017-03-16

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