MY189282A - Polysilicon manufacturing apparatus - Google Patents

Polysilicon manufacturing apparatus

Info

Publication number
MY189282A
MY189282A MYPI2018700589A MYPI2018700589A MY189282A MY 189282 A MY189282 A MY 189282A MY PI2018700589 A MYPI2018700589 A MY PI2018700589A MY PI2018700589 A MYPI2018700589 A MY PI2018700589A MY 189282 A MY189282 A MY 189282A
Authority
MY
Malaysia
Prior art keywords
rod
manufacturing apparatus
reaction chamber
silicon
polysilicon
Prior art date
Application number
MYPI2018700589A
Inventor
Sung Eun Park
Hee Dong Lee
Jiwoong Kim
Original Assignee
Hanwha Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hanwha Chemical Corp filed Critical Hanwha Chemical Corp
Publication of MY189282A publication Critical patent/MY189282A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J4/00—Feed or outlet devices; Feed or outlet control devices
    • B01J4/001—Feed or outlet devices as such, e.g. feeding tubes
    • B01J4/002—Nozzle-type elements
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/24—Stationary reactors without moving elements inside
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00106—Controlling the temperature by indirect heat exchange
    • B01J2208/00318—Heat exchange inside a feeding nozzle or nozzle reactor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention provides a polysilicon manufacturing apparatus that can prevent generation of popcorns in the entire CVD reaction process by cooling an upper portion of a silicon rod (40) where a rod bridge (31) is disposed. A polysilicon manufacturing apparatus according to an exemplary embodiment of the present invention includes: a reactor (10) provided on a base (21) and forming a reaction chamber (11); a pair of feedthroughs provided in the base (21) and extending into the reaction chamber (11); rod filament (30)s provided in the feedthroughs in the reaction chamber (11), connected with each other at upper ends thereof through a rod bridge (31), and where a silicon rod (40) of polysilicon is formed from a raw material gas through a chemical vapor deposition (CVD) process; and cooling spray nozzles spraying a cooling gas to the silicon rod (40) formed as silicon deposited around the rod bridge (31) and the rod filaments (30). Fig. 2
MYPI2018700589A 2015-08-28 2016-08-26 Polysilicon manufacturing apparatus MY189282A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020150121963A KR101895526B1 (en) 2015-08-28 2015-08-28 Polysilicon manufacturing apparatus
PCT/KR2016/009541 WO2017039246A1 (en) 2015-08-28 2016-08-26 Polysilicon preparation apparatus

Publications (1)

Publication Number Publication Date
MY189282A true MY189282A (en) 2022-01-31

Family

ID=58188992

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2018700589A MY189282A (en) 2015-08-28 2016-08-26 Polysilicon manufacturing apparatus

Country Status (6)

Country Link
US (1) US20180223432A1 (en)
KR (1) KR101895526B1 (en)
CN (1) CN107921403A (en)
MY (1) MY189282A (en)
TW (1) TWI605871B (en)
WO (1) WO2017039246A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113753899B (en) * 2021-10-25 2022-05-03 江苏大学 Heat preservation structure of reduction furnace, polycrystalline silicon reduction furnace and working method

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1119457A (en) * 1997-07-04 1999-01-26 Niigata Eng Co Ltd Gaseous hydrogen chloride absorption device
JP4516318B2 (en) * 2004-01-05 2010-08-04 株式会社日立国際電気 Substrate processing apparatus and semiconductor device manufacturing method
JP4495717B2 (en) * 2006-12-08 2010-07-07 株式会社日立国際電気 Substrate processing apparatus and semiconductor device manufacturing method
EP2271788A2 (en) * 2008-03-26 2011-01-12 GT Solar Incorporated Systems and methods for distributing gas in a chemical vapor deposition reactor
KR100892123B1 (en) * 2008-12-31 2009-04-09 (주)세미머티리얼즈 Poly silicon deposition device
WO2010098319A1 (en) * 2009-02-27 2010-09-02 株式会社トクヤマ Polycrystalline silicon rod and device for producing same
CN102361688A (en) * 2009-03-20 2012-02-22 株式会社水星技术 Hermetic container for thermal conversion reaction
US8399072B2 (en) * 2009-04-24 2013-03-19 Savi Research, Inc. Process for improved chemcial vapor deposition of polysilicon
JP5579634B2 (en) * 2011-01-24 2014-08-27 信越化学工業株式会社 Reactor for producing polycrystalline silicon and method for producing polycrystalline silicon
KR101279414B1 (en) * 2011-08-17 2013-06-27 (주)세미머티리얼즈 Apparatus for manufacturing polycrystalline silicon and method for manufacturing polycrystalline
JP5917359B2 (en) * 2012-10-16 2016-05-11 信越化学工業株式会社 Method for supplying raw material gas for producing polycrystalline silicon and polycrystalline silicon
CN104016349B (en) * 2014-05-29 2015-09-30 姚迅 A kind of production equipment of polycrystalline silicon rod and method thereof

Also Published As

Publication number Publication date
US20180223432A1 (en) 2018-08-09
KR101895526B1 (en) 2018-09-05
CN107921403A (en) 2018-04-17
TW201718084A (en) 2017-06-01
TWI605871B (en) 2017-11-21
KR20170025477A (en) 2017-03-08
WO2017039246A1 (en) 2017-03-09

Similar Documents

Publication Publication Date Title
MX2019012614A (en) Reactive gas generation system and method of treatment using reactive gas.
CN102280396B (en) Graphite boat saturated treating technology
SG10201808248RA (en) Deposition system with multi-cathode and method of manufacture thereof
GB2548501A (en) Highly twinned, oriented polycrystalline diamond film and method of manufacture thereof
MY175674A (en) Process for production of polycrystalline silicon
MX2020001903A (en) Novel polypeptide and method for producing imp using same.
MY183557A (en) Plasma cvd device and plasma cvd method
MY198714A (en) Photovoltaic devices and method of manufacturing
SG10201806569PA (en) Pecvd microcrystalline silicon germanium (sige)
JP2015073096A5 (en)
MY171391A (en) Formation of [2,2]paracyclophane and related compounds and methods for the formation of polymers from cyclophanes
JP2013229608A5 (en)
WO2012170511A3 (en) Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (hwcvd) chamber
SG11201803914QA (en) Method for Epitaxially Coating Semiconductor Wafers, and Semiconductor Wafer
EP3956260A4 (en) Chemical looping process for the production of hydrogen
TW201546320A (en) Apparatus for regulating gas flow in a deposition chamber, depositon chamber, and methods of depositing a material uniformly over a substrate
WO2016072850A3 (en) Atomic layer deposition apparatus and method for processing substrates using an apparatus
MY189282A (en) Polysilicon manufacturing apparatus
JP2012023350A5 (en)
SG11201901034XA (en) Substrate processing apparatus, metal member, and method of manufacturing semiconductor device
SG11201807933QA (en) Vaporizer, substrate treatment apparatus, and method for manufacturing semiconductor device
MY184337A (en) Reactor for depositing polycrystalline silicon
WO2017122963A3 (en) Method for manufacturing epitaxial wafer
CN105917748B (en) Device and method for reducing impurity in film
WO2014154424A3 (en) Method for a diamond vapor deposition