SG11201907623RA - Reflective mask blank, reflective mask and method of manufacturing semiconductor device - Google Patents
Reflective mask blank, reflective mask and method of manufacturing semiconductor deviceInfo
- Publication number
- SG11201907623RA SG11201907623RA SG11201907623RA SG11201907623RA SG11201907623RA SG 11201907623R A SG11201907623R A SG 11201907623RA SG 11201907623R A SG11201907623R A SG 11201907623RA SG 11201907623R A SG11201907623R A SG 11201907623RA SG 11201907623R A SG11201907623R A SG 11201907623RA
- Authority
- SG
- Singapore
- Prior art keywords
- reflective mask
- group
- phase shift
- mask blank
- reflectance
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017040043 | 2017-03-03 | ||
| JP2017107394A JP6861095B2 (ja) | 2017-03-03 | 2017-05-31 | 反射型マスクブランク、反射型マスク及び半導体装置の製造方法 |
| PCT/JP2018/006054 WO2018159392A1 (ja) | 2017-03-03 | 2018-02-20 | 反射型マスクブランク、反射型マスク及び半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201907623RA true SG11201907623RA (en) | 2019-09-27 |
Family
ID=63592111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201907623RA SG11201907623RA (en) | 2017-03-03 | 2018-02-20 | Reflective mask blank, reflective mask and method of manufacturing semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US11003068B2 (enExample) |
| JP (2) | JP6861095B2 (enExample) |
| KR (1) | KR102639087B1 (enExample) |
| SG (1) | SG11201907623RA (enExample) |
| TW (1) | TWI783976B (enExample) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018159392A1 (ja) | 2017-03-03 | 2018-09-07 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及び半導体装置の製造方法 |
| TWI835896B (zh) | 2018-10-26 | 2024-03-21 | 美商應用材料股份有限公司 | 具有後側塗層的極紫外線掩模 |
| US20220091498A1 (en) * | 2019-03-13 | 2022-03-24 | Hoya Corporation | Reflection-type mask blank, reflection-type mask and method for manufacturing same, and method for manufacturing semiconductor device |
| JP7401356B2 (ja) * | 2019-03-27 | 2023-12-19 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 |
| ES3054302T3 (en) | 2019-09-24 | 2026-02-02 | Lg Energy Solution Ltd | Positive electrode for lithium-sulfur secondary battery having pattern, manufacturing method therefor, and lithium-sulfur secondary battery including same |
| JP7363913B2 (ja) * | 2019-10-29 | 2023-10-18 | Ａｇｃ株式会社 | 反射型マスクブランクおよび反射型マスク |
| JP6929340B2 (ja) * | 2019-11-21 | 2021-09-01 | Hoya株式会社 | 反射型マスクブランクおよび反射型マスク、並びに半導体装置の製造方法 |
| KR20220122614A (ko) * | 2019-12-27 | 2022-09-02 | 에이지씨 가부시키가이샤 | Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그들의 제조 방법 |
| KR102567180B1 (ko) * | 2020-04-21 | 2023-08-16 | 에이지씨 가부시키가이샤 | Euv 리소그래피용 반사형 마스크 블랭크 |
| JP7612408B2 (ja) * | 2020-12-22 | 2025-01-14 | Hoya株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクの製造方法、及び半導体デバイスの製造方法 |
| JP7295215B2 (ja) * | 2021-02-25 | 2023-06-20 | エスアンドエス テック カンパニー リミテッド | 極紫外線リソグラフィ用位相反転ブランクマスク及びフォトマスク |
| KR102837249B1 (ko) * | 2021-02-25 | 2025-07-22 | 주식회사 에스앤에스텍 | 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크 |
| JP7616099B2 (ja) * | 2021-03-03 | 2025-01-17 | 信越化学工業株式会社 | 反射型マスクブランク及びその製造方法 |
| US20220283491A1 (en) * | 2021-03-03 | 2022-09-08 | Shin-Etsu Chemical Co., Ltd. | Reflective mask blank, and method for manufacturing thereof |
| JP7616098B2 (ja) * | 2021-03-03 | 2025-01-17 | 信越化学工業株式会社 | 反射型マスクブランク及び反射型マスク |
| JP7826305B2 (ja) | 2021-05-27 | 2026-03-09 | Hoya株式会社 | マスクブランク、反射型マスク及び半導体デバイスの製造方法 |
| JP7699970B2 (ja) * | 2021-06-10 | 2025-06-30 | Hoya株式会社 | マスクブランク、反射型マスク及び半導体デバイスの製造方法 |
| KR20240036560A (ko) * | 2021-07-30 | 2024-03-20 | 에이지씨 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 |
| TW202328816A (zh) * | 2021-09-03 | 2023-07-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 形成用於極紫外光（ｅｕｖ）劑量減少之底層及包括該底層之結構的方法 |
| KR102982153B1 (ko) * | 2021-12-13 | 2026-06-25 | 에이지씨 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 |
| KR20240146079A (ko) * | 2022-03-29 | 2024-10-07 | 가부시키가이샤 토판 포토마스크 | 반사형 포토마스크 블랭크 및 반사형 포토마스크 |
| WO2023190360A1 (ja) * | 2022-04-01 | 2023-10-05 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法 |
| KR102814237B1 (ko) * | 2022-06-20 | 2025-05-30 | 주식회사 에스앤에스텍 | 극자외선 리소그래피용 블랭크마스크 및 포토마스크 |
| JP7392236B1 (ja) | 2022-07-05 | 2023-12-06 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法 |
| WO2024009819A1 (ja) * | 2022-07-05 | 2024-01-11 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法 |
| KR102882827B1 (ko) * | 2022-10-13 | 2025-11-07 | 주식회사 에스앤에스텍 | 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크 |
| JP2024119143A (ja) * | 2023-02-22 | 2024-09-03 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及び半導体デバイスの製造方法 |
| WO2024225163A1 (ja) * | 2023-04-28 | 2024-10-31 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
| JP2025163548A (ja) * | 2024-04-17 | 2025-10-29 | 信越化学工業株式会社 | 反射型フォトマスクブランク、及び反射型フォトマスクの製造方法 |
| WO2026150793A1 (ja) * | 2025-01-10 | 2026-07-16 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクの製造方法 |
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| JPS5233321B1 (enExample) | 1971-07-10 | 1977-08-27 | ||
| CA1033487A (en) | 1972-10-31 | 1978-06-20 | Rolf Dhein | Binders for low-solvent lacquer systems |
| JP3078163B2 (ja) | 1993-10-15 | 2000-08-21 | キヤノン株式会社 | リソグラフィ用反射型マスクおよび縮小投影露光装置 |
| JP4458216B2 (ja) | 2000-09-01 | 2010-04-28 | 信越化学工業株式会社 | フォトマスク用ブランクス及びフォトマスクの製造方法 |
| US7282307B2 (en) * | 2004-06-18 | 2007-10-16 | Freescale Semiconductor, Inc. | Reflective mask useful for transferring a pattern using extreme ultra violet (EUV) radiation and method of making the same |
| JP2006228766A (ja) | 2005-02-15 | 2006-08-31 | Toppan Printing Co Ltd | 極端紫外線露光用マスク、マスクブランク、及び露光方法 |
| JP5233321B2 (ja) | 2008-02-27 | 2013-07-10 | 凸版印刷株式会社 | 極端紫外線露光用マスクブランク、極端紫外線露光用マスク、極端紫外線露光用マスクの製造方法及び極端紫外線露光用マスクを用いたパターン転写方法 |
| JP5702920B2 (ja) * | 2008-06-25 | 2015-04-15 | Hoya株式会社 | 位相シフトマスクブランク、位相シフトマスクおよび位相シフトマスクブランクの製造方法 |
| JP5266988B2 (ja) | 2008-09-10 | 2013-08-21 | 凸版印刷株式会社 | ハーフトーン型ｅｕｖマスク、ハーフトーン型ｅｕｖマスクブランク、ハーフトーン型ｅｕｖマスクの製造方法及びパターン転写方法 |
| EP2453464A1 (en) | 2009-07-08 | 2012-05-16 | Asahi Glass Company, Limited | Euv-lithography reflection-type mask blank |
| JP5556452B2 (ja) | 2010-07-06 | 2014-07-23 | 信越化学工業株式会社 | パターン形成方法 |
| WO2012026463A1 (ja) * | 2010-08-24 | 2012-03-01 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク |
| JP5690023B2 (ja) * | 2012-07-13 | 2015-03-25 | Hoya株式会社 | マスクブランク及び位相シフトマスクの製造方法 |
| JP6287099B2 (ja) * | 2013-05-31 | 2018-03-07 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク |
| KR20170120212A (ko) | 2013-09-18 | 2017-10-30 | 호야 가부시키가이샤 | 반사형 마스크 블랭크 및 그 제조방법, 반사형 마스크 그리고 반도체 장치의 제조방법 |
| JP6301127B2 (ja) | 2013-12-25 | 2018-03-28 | Hoya株式会社 | 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 |
| JP6381921B2 (ja) | 2014-01-30 | 2018-08-29 | Hoya株式会社 | 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法 |
| JP6440996B2 (ja) * | 2014-08-22 | 2018-12-19 | Hoya株式会社 | 反射型マスクブランク及びその製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法 |
| JP6441012B2 (ja) * | 2014-09-30 | 2018-12-19 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 |
| JP6499440B2 (ja) * | 2014-12-24 | 2019-04-10 | Hoya株式会社 | 反射型マスクブランク及び反射型マスク |
| JP6739960B2 (ja) * | 2016-03-28 | 2020-08-12 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及び半導体装置の製造方法 |
-
2017
- 2017-05-31 JP JP2017107394A patent/JP6861095B2/ja active Active
-
2018
- 2018-02-20 KR KR1020197028297A patent/KR102639087B1/ko active Active
- 2018-02-20 US US16/490,018 patent/US11003068B2/en active Active
- 2018-02-20 SG SG11201907623RA patent/SG11201907623RA/en unknown
- 2018-03-02 TW TW107106939A patent/TWI783976B/zh active
-
2021
- 2021-03-29 JP JP2021054859A patent/JP7263424B2/ja active Active
- 2021-04-12 US US17/227,655 patent/US11480867B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI783976B (zh) | 2022-11-21 |
| KR102639087B1 (ko) | 2024-02-22 |
| US20190384158A1 (en) | 2019-12-19 |
| JP2018146945A (ja) | 2018-09-20 |
| TW201842396A (zh) | 2018-12-01 |
| JP2021101258A (ja) | 2021-07-08 |
| US11003068B2 (en) | 2021-05-11 |
| US20210255536A1 (en) | 2021-08-19 |
| JP7263424B2 (ja) | 2023-04-24 |
| US11480867B2 (en) | 2022-10-25 |
| KR20190117755A (ko) | 2019-10-16 |
| JP6861095B2 (ja) | 2021-04-21 |
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