TWI783976B - 反射型光罩基底、反射型光罩及半導體裝置之製造方法 - Google Patents
反射型光罩基底、反射型光罩及半導體裝置之製造方法 Download PDFInfo
- Publication number
- TWI783976B TWI783976B TW107106939A TW107106939A TWI783976B TW I783976 B TWI783976 B TW I783976B TW 107106939 A TW107106939 A TW 107106939A TW 107106939 A TW107106939 A TW 107106939A TW I783976 B TWI783976 B TW I783976B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- group
- phase shift
- mentioned
- reflective
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 168
- 238000004519 manufacturing process Methods 0.000 title claims description 55
- 239000004065 semiconductor Substances 0.000 title claims description 34
- 230000010363 phase shift Effects 0.000 claims abstract description 219
- 239000000956 alloy Substances 0.000 claims abstract description 218
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 215
- 229910052751 metal Inorganic materials 0.000 claims abstract description 97
- 230000008033 biological extinction Effects 0.000 claims abstract description 86
- 239000000203 mixture Substances 0.000 claims abstract description 51
- 239000000463 material Substances 0.000 claims abstract description 50
- 239000002184 metal Substances 0.000 claims abstract description 42
- 238000002310 reflectometry Methods 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 27
- 150000002739 metals Chemical class 0.000 claims abstract description 17
- 230000001681 protective effect Effects 0.000 claims description 32
- 229910052758 niobium Inorganic materials 0.000 claims description 15
- 229910052804 chromium Inorganic materials 0.000 claims description 14
- 229910052697 platinum Inorganic materials 0.000 claims description 14
- 229910052703 rhodium Inorganic materials 0.000 claims description 14
- 229910052727 yttrium Inorganic materials 0.000 claims description 14
- 229910052726 zirconium Inorganic materials 0.000 claims description 14
- 229910052737 gold Inorganic materials 0.000 claims description 13
- 229910052741 iridium Inorganic materials 0.000 claims description 13
- 229910052748 manganese Inorganic materials 0.000 claims description 13
- 229910052709 silver Inorganic materials 0.000 claims description 13
- 229910052715 tantalum Inorganic materials 0.000 claims description 13
- 229910052718 tin Inorganic materials 0.000 claims description 13
- 229910052721 tungsten Inorganic materials 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 229910052763 palladium Inorganic materials 0.000 claims description 12
- 229910052720 vanadium Inorganic materials 0.000 claims description 11
- 229910052735 hafnium Inorganic materials 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 7
- 229910001325 element alloy Inorganic materials 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 description 447
- 239000010410 layer Substances 0.000 description 53
- 239000007789 gas Substances 0.000 description 33
- 238000005530 etching Methods 0.000 description 22
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 11
- 239000011651 chromium Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 229910002056 binary alloy Inorganic materials 0.000 description 7
- 229910052731 fluorine Inorganic materials 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 229910052725 zinc Inorganic materials 0.000 description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000011737 fluorine Substances 0.000 description 6
- 238000001659 ion-beam spectroscopy Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 229910052714 tellurium Inorganic materials 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 229910004168 TaNb Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- 229910005805 NiNb Inorganic materials 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910002058 ternary alloy Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 241001239379 Calophysus macropterus Species 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910018936 CoPd Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910015187 FePd Inorganic materials 0.000 description 1
- 229910004134 HfNb Inorganic materials 0.000 description 1
- 101000652359 Homo sapiens Spermatogenesis-associated protein 2 Proteins 0.000 description 1
- 101000642464 Homo sapiens Spermatogenesis-associated protein 2-like protein Proteins 0.000 description 1
- 229910015234 MoCo Inorganic materials 0.000 description 1
- 229910016024 MoTa Inorganic materials 0.000 description 1
- 101100116973 Mus musculus Dmbt1 gene Proteins 0.000 description 1
- 229910003294 NiMo Inorganic materials 0.000 description 1
- 229910019017 PtRh Inorganic materials 0.000 description 1
- 101150107345 Rhag gene Proteins 0.000 description 1
- 229910000929 Ru alloy Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910007162 SnPd Inorganic materials 0.000 description 1
- 102100030254 Spermatogenesis-associated protein 2 Human genes 0.000 description 1
- 229910004164 TaMo Inorganic materials 0.000 description 1
- 229910004228 TaPd Inorganic materials 0.000 description 1
- 229910004231 TaRh Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 229910000039 hydrogen halide Inorganic materials 0.000 description 1
- 239000012433 hydrogen halide Substances 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910000638 pseudo palladium Inorganic materials 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017040043 | 2017-03-03 | ||
| JP2017-040043 | 2017-03-03 | ||
| JP2017-107394 | 2017-05-31 | ||
| JP2017107394A JP6861095B2 (ja) | 2017-03-03 | 2017-05-31 | 反射型マスクブランク、反射型マスク及び半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201842396A TW201842396A (zh) | 2018-12-01 |
| TWI783976B true TWI783976B (zh) | 2022-11-21 |
Family
ID=63592111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107106939A TWI783976B (zh) | 2017-03-03 | 2018-03-02 | 反射型光罩基底、反射型光罩及半導體裝置之製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US11003068B2 (enExample) |
| JP (2) | JP6861095B2 (enExample) |
| KR (1) | KR102639087B1 (enExample) |
| SG (1) | SG11201907623RA (enExample) |
| TW (1) | TWI783976B (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20240025717A (ko) | 2017-03-03 | 2024-02-27 | 호야 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 |
| TWI835896B (zh) | 2018-10-26 | 2024-03-21 | 美商應用材料股份有限公司 | 具有後側塗層的極紫外線掩模 |
| KR20210134605A (ko) * | 2019-03-13 | 2021-11-10 | 호야 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 그리고 반도체 장치의 제조 방법 |
| JP7401356B2 (ja) * | 2019-03-27 | 2023-12-19 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 |
| JP7315726B2 (ja) | 2019-09-24 | 2023-07-26 | エルジー エナジー ソリューション リミテッド | パターンが形成されたリチウム‐硫黄二次電池用正極、この製造方法及びこれを含むリチウム‐硫黄二次電池 |
| KR102644109B1 (ko) * | 2019-10-29 | 2024-03-07 | 에이지씨 가부시키가이샤 | 반사형 마스크 블랭크 및 반사형 마스크 |
| JP6929340B2 (ja) * | 2019-11-21 | 2021-09-01 | Hoya株式会社 | 反射型マスクブランクおよび反射型マスク、並びに半導体装置の製造方法 |
| KR20220122614A (ko) * | 2019-12-27 | 2022-09-02 | 에이지씨 가부시키가이샤 | Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그들의 제조 방법 |
| JP7295215B2 (ja) * | 2021-02-25 | 2023-06-20 | エスアンドエス テック カンパニー リミテッド | 極紫外線リソグラフィ用位相反転ブランクマスク及びフォトマスク |
| KR102837249B1 (ko) * | 2021-02-25 | 2025-07-22 | 주식회사 에스앤에스텍 | 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크 |
| JP7616099B2 (ja) * | 2021-03-03 | 2025-01-17 | 信越化学工業株式会社 | 反射型マスクブランク及びその製造方法 |
| US20220283491A1 (en) * | 2021-03-03 | 2022-09-08 | Shin-Etsu Chemical Co., Ltd. | Reflective mask blank, and method for manufacturing thereof |
| US12181790B2 (en) * | 2021-03-03 | 2024-12-31 | Shin-Etsu Chemical Co., Ltd. | Reflective mask blank and reflective mask |
| US20240184193A1 (en) | 2021-05-27 | 2024-06-06 | Hoya Corporation | Mask blank, reflective mask, and method for producing semiconductor device |
| JP7699970B2 (ja) * | 2021-06-10 | 2025-06-30 | Hoya株式会社 | マスクブランク、反射型マスク及び半導体デバイスの製造方法 |
| WO2023008435A1 (ja) * | 2021-07-30 | 2023-02-02 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
| WO2023112767A1 (ja) * | 2021-12-13 | 2023-06-22 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
| KR102624893B1 (ko) | 2021-12-13 | 2024-01-16 | 에이지씨 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 |
| KR20250153884A (ko) * | 2022-04-01 | 2025-10-27 | 에이지씨 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 |
| KR102814237B1 (ko) * | 2022-06-20 | 2025-05-30 | 주식회사 에스앤에스텍 | 극자외선 리소그래피용 블랭크마스크 및 포토마스크 |
| WO2024009809A1 (ja) * | 2022-07-05 | 2024-01-11 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法 |
| WO2024009819A1 (ja) * | 2022-07-05 | 2024-01-11 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法 |
| KR102762202B1 (ko) | 2022-07-05 | 2025-02-07 | 에이지씨 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 |
| KR102882827B1 (ko) * | 2022-10-13 | 2025-11-07 | 주식회사 에스앤에스텍 | 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크 |
| JP2024119143A (ja) * | 2023-02-22 | 2024-09-03 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及び半導体デバイスの製造方法 |
| WO2024225163A1 (ja) * | 2023-04-28 | 2024-10-31 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
| JP2025163548A (ja) * | 2024-04-17 | 2025-10-29 | 信越化学工業株式会社 | 反射型フォトマスクブランク、及び反射型フォトマスクの製造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07114173A (ja) * | 1993-10-15 | 1995-05-02 | Canon Inc | リソグラフィ用反射型マスクおよび縮小投影露光装置 |
| JP2015122468A (ja) * | 2013-12-25 | 2015-07-02 | Hoya株式会社 | 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 |
| TW201631378A (zh) * | 2014-12-24 | 2016-09-01 | Hoya Corp | 反射型光罩基底、反射型光罩及半導體裝置之製造方法 |
| US20170023856A1 (en) * | 2012-07-13 | 2017-01-26 | Hoya Corporation | Mask blank and method of manufacturing phase shift mask |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5233321B1 (enExample) | 1971-07-10 | 1977-08-27 | ||
| US3883454A (en) | 1972-10-31 | 1975-05-13 | Bayer Ag | Binders for environmentally harmless laquer systems |
| JP4458216B2 (ja) * | 2000-09-01 | 2010-04-28 | 信越化学工業株式会社 | フォトマスク用ブランクス及びフォトマスクの製造方法 |
| US7282307B2 (en) * | 2004-06-18 | 2007-10-16 | Freescale Semiconductor, Inc. | Reflective mask useful for transferring a pattern using extreme ultra violet (EUV) radiation and method of making the same |
| JP2006228766A (ja) | 2005-02-15 | 2006-08-31 | Toppan Printing Co Ltd | 極端紫外線露光用マスク、マスクブランク、及び露光方法 |
| JP5233321B2 (ja) | 2008-02-27 | 2013-07-10 | 凸版印刷株式会社 | 極端紫外線露光用マスクブランク、極端紫外線露光用マスク、極端紫外線露光用マスクの製造方法及び極端紫外線露光用マスクを用いたパターン転写方法 |
| JP5702920B2 (ja) * | 2008-06-25 | 2015-04-15 | Hoya株式会社 | 位相シフトマスクブランク、位相シフトマスクおよび位相シフトマスクブランクの製造方法 |
| JP5266988B2 (ja) | 2008-09-10 | 2013-08-21 | 凸版印刷株式会社 | ハーフトーン型ｅｕｖマスク、ハーフトーン型ｅｕｖマスクブランク、ハーフトーン型ｅｕｖマスクの製造方法及びパターン転写方法 |
| WO2011004850A1 (ja) * | 2009-07-08 | 2011-01-13 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク |
| JP5556452B2 (ja) * | 2010-07-06 | 2014-07-23 | 信越化学工業株式会社 | パターン形成方法 |
| KR20140004057A (ko) * | 2010-08-24 | 2014-01-10 | 아사히 가라스 가부시키가이샤 | Euv 리소그래피용 반사형 마스크 블랭크 |
| JP6287099B2 (ja) * | 2013-05-31 | 2018-03-07 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク |
| KR20170120212A (ko) | 2013-09-18 | 2017-10-30 | 호야 가부시키가이샤 | 반사형 마스크 블랭크 및 그 제조방법, 반사형 마스크 그리고 반도체 장치의 제조방법 |
| JP6381921B2 (ja) * | 2014-01-30 | 2018-08-29 | Hoya株式会社 | 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法 |
| JP6440996B2 (ja) * | 2014-08-22 | 2018-12-19 | Hoya株式会社 | 反射型マスクブランク及びその製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法 |
| JP6441012B2 (ja) * | 2014-09-30 | 2018-12-19 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 |
| JP6739960B2 (ja) * | 2016-03-28 | 2020-08-12 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及び半導体装置の製造方法 |
-
2017
- 2017-05-31 JP JP2017107394A patent/JP6861095B2/ja active Active
-
2018
- 2018-02-20 KR KR1020197028297A patent/KR102639087B1/ko active Active
- 2018-02-20 US US16/490,018 patent/US11003068B2/en active Active
- 2018-02-20 SG SG11201907623RA patent/SG11201907623RA/en unknown
- 2018-03-02 TW TW107106939A patent/TWI783976B/zh active
-
2021
- 2021-03-29 JP JP2021054859A patent/JP7263424B2/ja active Active
- 2021-04-12 US US17/227,655 patent/US11480867B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07114173A (ja) * | 1993-10-15 | 1995-05-02 | Canon Inc | リソグラフィ用反射型マスクおよび縮小投影露光装置 |
| US20170023856A1 (en) * | 2012-07-13 | 2017-01-26 | Hoya Corporation | Mask blank and method of manufacturing phase shift mask |
| JP2015122468A (ja) * | 2013-12-25 | 2015-07-02 | Hoya株式会社 | 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 |
| TW201631378A (zh) * | 2014-12-24 | 2016-09-01 | Hoya Corp | 反射型光罩基底、反射型光罩及半導體裝置之製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2018146945A (ja) | 2018-09-20 |
| US20210255536A1 (en) | 2021-08-19 |
| US20190384158A1 (en) | 2019-12-19 |
| KR20190117755A (ko) | 2019-10-16 |
| SG11201907623RA (en) | 2019-09-27 |
| JP7263424B2 (ja) | 2023-04-24 |
| US11480867B2 (en) | 2022-10-25 |
| US11003068B2 (en) | 2021-05-11 |
| JP2021101258A (ja) | 2021-07-08 |
| TW201842396A (zh) | 2018-12-01 |
| KR102639087B1 (ko) | 2024-02-22 |
| JP6861095B2 (ja) | 2021-04-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI783976B (zh) | 反射型光罩基底、反射型光罩及半導體裝置之製造方法 | |
| TWI775442B (zh) | 反射型遮罩基底、反射型遮罩及半導體裝置之製造方法 | |
| JP6301127B2 (ja) | 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 | |
| JPWO2019225736A1 (ja) | 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 | |
| JP7588176B2 (ja) | 反射型マスクブランク、反射型マスク及び半導体装置の製造方法 | |
| JP7478208B2 (ja) | 反射型マスク、並びに反射型マスクブランク及び半導体装置の製造方法 | |
| JP6441012B2 (ja) | 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 | |
| JP6968945B2 (ja) | 反射型マスクブランク、反射型マスク及び半導体装置の製造方法 | |
| US20240411220A1 (en) | Multilayer reflective film-attached substrate, reflective mask blank, reflective mask, and method for producing semiconductor device | |
| CN113383271A (zh) | 掩模坯料、相移掩模、相移掩模的制造方法以及半导体器件的制造方法 | |
| US20220283491A1 (en) | Reflective mask blank, and method for manufacturing thereof | |
| WO2022249863A1 (ja) | マスクブランク、反射型マスク及び半導体デバイスの製造方法 | |
| JP2024119143A (ja) | 反射型マスクブランク、反射型マスク及び半導体デバイスの製造方法 |