SG11201900913VA - Defect marking for semiconductor wafer inspection - Google Patents
Defect marking for semiconductor wafer inspectionInfo
- Publication number
- SG11201900913VA SG11201900913VA SG11201900913VA SG11201900913VA SG11201900913VA SG 11201900913V A SG11201900913V A SG 11201900913VA SG 11201900913V A SG11201900913V A SG 11201900913VA SG 11201900913V A SG11201900913V A SG 11201900913VA SG 11201900913V A SG11201900913V A SG 11201900913VA
- Authority
- SG
- Singapore
- Prior art keywords
- defect
- international
- wafer
- tool
- california
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/27—Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/44—Sample treatment involving radiation, e.g. heat
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9506—Optical discs
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0614—Marking devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8854—Grading and classifying of flaws
- G01N2021/888—Marking defects
Landscapes
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Pathology (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Immunology (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Signal Processing (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Manufacturing & Machinery (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662400182P | 2016-09-27 | 2016-09-27 | |
| US15/430,817 US10082470B2 (en) | 2016-09-27 | 2017-02-13 | Defect marking for semiconductor wafer inspection |
| PCT/US2017/053540 WO2018064072A1 (en) | 2016-09-27 | 2017-09-26 | Defect marking for semiconductor wafer inspection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201900913VA true SG11201900913VA (en) | 2019-04-29 |
Family
ID=61686085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201900913VA SG11201900913VA (en) | 2016-09-27 | 2017-09-26 | Defect marking for semiconductor wafer inspection |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10082470B2 (https=) |
| JP (1) | JP6918931B2 (https=) |
| KR (1) | KR102235580B1 (https=) |
| CN (1) | CN109690748B (https=) |
| SG (1) | SG11201900913VA (https=) |
| TW (1) | TWI722246B (https=) |
| WO (1) | WO2018064072A1 (https=) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10928740B2 (en) * | 2017-02-03 | 2021-02-23 | Kla Corporation | Three-dimensional calibration structures and methods for measuring buried defects on a three-dimensional semiconductor wafer |
| US20190238796A1 (en) | 2017-05-11 | 2019-08-01 | Jacob Nathaniel Allen | Object Inspection System And Method For Inspecting An Object |
| US11035804B2 (en) | 2017-06-28 | 2021-06-15 | Kla Corporation | System and method for x-ray imaging and classification of volume defects |
| KR102037748B1 (ko) * | 2017-12-06 | 2019-11-29 | 에스케이실트론 주식회사 | 웨이퍼의 결함 영역을 평가하는 방법 |
| US11054250B2 (en) * | 2018-04-11 | 2021-07-06 | International Business Machines Corporation | Multi-channel overlay metrology |
| TWI662250B (zh) * | 2018-05-24 | 2019-06-11 | 仲鈜科技股份有限公司 | 標記載體上的多個被動元件中的缺陷品的系統及其方法 |
| CN108760753B (zh) * | 2018-05-31 | 2023-12-12 | 永捷电子（始兴）有限公司 | Mark点检测装置及其检测方法 |
| KR102800291B1 (ko) * | 2018-07-30 | 2025-04-28 | 닛뽄 가야쿠 가부시키가이샤 | 마킹 장치, 마킹 방법, 편광판의 제조 방법 및 편광판 |
| TWI708041B (zh) * | 2018-10-17 | 2020-10-21 | 所羅門股份有限公司 | 檢測與標記瑕疵的方法 |
| US11231376B2 (en) * | 2019-08-29 | 2022-01-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for semiconductor wafer inspection and system thereof |
| US11798153B2 (en) * | 2019-10-02 | 2023-10-24 | Kla Corporation | Frequency domain enhancement of low-SNR flat residue/stain defects for effective detection |
| KR20230024390A (ko) | 2020-06-17 | 2023-02-20 | 이노비전 소프트웨어 솔루션즈, 인크. | 결함 복원을 위한 시스템 및 방법 |
| CN114192440B (zh) * | 2020-09-18 | 2024-05-03 | 中国科学院微电子研究所 | 一种不合格晶圆的检出装置及检出方法、晶圆制造设备 |
| US11513079B2 (en) | 2020-10-09 | 2022-11-29 | Fei Company | Method and system for wafer defect inspection |
| US20220196723A1 (en) * | 2020-12-18 | 2022-06-23 | Kla Corporation | System and method for automatically identifying defect-based test coverage gaps in semiconductor devices |
| JP7528870B2 (ja) * | 2021-06-08 | 2024-08-06 | 信越半導体株式会社 | ウェーハマーキング方法及び窒化物半導体デバイスの製造方法並びに窒化物半導体基板 |
| US12293506B2 (en) | 2021-07-20 | 2025-05-06 | Inovision Software Solutions, Inc. | Method to locate defects in e-coat |
| CN113884502A (zh) * | 2021-12-07 | 2022-01-04 | 武汉华工激光工程有限责任公司 | 基于线阵相机的载板检测及激光标记系统和方法 |
| TWI858453B (zh) * | 2022-01-06 | 2024-10-11 | 日商捷進科技有限公司 | 半導體製造裝置、檢查裝置及半導體裝置的製造方法 |
| US12505553B2 (en) * | 2022-02-15 | 2025-12-23 | Vitrox Technologies Sdn Bhd | Inspection system |
| US20250015013A1 (en) * | 2022-02-18 | 2025-01-09 | Mitsubishi Electric Corporation | Method for marking semiconductor chip, method for manufacturing semiconductor chip, and semiconductor chip |
| TWI833390B (zh) * | 2022-02-23 | 2024-02-21 | 南亞科技股份有限公司 | 製造缺陷原因之識別系統以及非暫時性電腦可讀媒體 |
| US12118709B2 (en) | 2022-02-23 | 2024-10-15 | Nanya Technology Corporation | Method for identifying cause of manufacturing defects |
| US12175652B2 (en) | 2022-02-23 | 2024-12-24 | Nanya Technology Corporation | System and non-transitory computer-readable medium for identifying cause of manufacturing defects |
| TWI860523B (zh) * | 2022-05-31 | 2024-11-01 | 鴻海精密工業股份有限公司 | 瑕疵檢測方法、電子設備及計算機可讀存儲媒體 |
| CN117197025B (zh) * | 2022-05-31 | 2026-02-24 | 鸿海精密工业股份有限公司 | 瑕疵检测方法、电子设备及存储介质 |
| KR102734303B1 (ko) | 2022-09-30 | 2024-11-26 | 주식회사 에스에프에이 | Sem-fib 분석 시스템 및 sem-fib 분석 방법 |
| KR102813550B1 (ko) | 2022-11-30 | 2025-05-30 | 주식회사 에스에프에이 | 부도체 샘플의 sem 자동 검사를 위한 자동초점 조정방법 및 부도체 샘플의 sem 자동 검사 시스템 |
| CN116013800B (zh) * | 2022-12-30 | 2024-02-27 | 胜科纳米(苏州)股份有限公司 | 一种缺陷定位方法、装置、电子设备及存储介质 |
| CN116718602A (zh) * | 2023-06-28 | 2023-09-08 | 上海华力微电子有限公司 | 一种失效定位及失效分析方法 |
| CN117038491A (zh) * | 2023-08-29 | 2023-11-10 | 西安奕斯伟材料科技股份有限公司 | 一种硅片缺陷测量方法及装置 |
| US20250308902A1 (en) * | 2024-03-26 | 2025-10-02 | Tokyo Electron Limited | Using laser based system for mean of shaping of unsingulated & singulated dies by substrate lattice manipulation |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6271916B1 (en) | 1994-03-24 | 2001-08-07 | Kla-Tencor Corporation | Process and assembly for non-destructive surface inspections |
| US5608526A (en) | 1995-01-19 | 1997-03-04 | Tencor Instruments | Focused beam spectroscopic ellipsometry method and system |
| US5859424A (en) | 1997-04-08 | 1999-01-12 | Kla-Tencor Corporation | Apodizing filter system useful for reducing spot size in optical measurements and other applications |
| US6201601B1 (en) | 1997-09-19 | 2001-03-13 | Kla-Tencor Corporation | Sample inspection system |
| KR100279962B1 (ko) * | 1997-12-29 | 2001-03-02 | 윤종용 | 반도체 웨이퍼의 벌크디펙트의 모폴로지 분석방법 및 표면디펙트의 모폴로지 분석방법 |
| US6208411B1 (en) | 1998-09-28 | 2001-03-27 | Kla-Tencor Corporation | Massively parallel inspection and imaging system |
| US6429943B1 (en) | 2000-03-29 | 2002-08-06 | Therma-Wave, Inc. | Critical dimension analysis with simultaneous multiple angle of incidence measurements |
| JP2002340990A (ja) * | 2001-05-15 | 2002-11-27 | Jeol Ltd | 半導体デバイスの評価方法及び装置。 |
| US7130039B2 (en) | 2002-04-18 | 2006-10-31 | Kla-Tencor Technologies Corporation | Simultaneous multi-spot inspection and imaging |
| US7027142B2 (en) * | 2002-05-06 | 2006-04-11 | Applied Materials, Israel, Ltd. | Optical technique for detecting buried defects in opaque films |
| US7295303B1 (en) | 2004-03-25 | 2007-11-13 | Kla-Tencor Technologies Corporation | Methods and apparatus for inspecting a sample |
| US7478019B2 (en) | 2005-01-26 | 2009-01-13 | Kla-Tencor Corporation | Multiple tool and structure analysis |
| US7567351B2 (en) | 2006-02-02 | 2009-07-28 | Kla-Tencor Corporation | High resolution monitoring of CD variations |
| US7664608B2 (en) * | 2006-07-14 | 2010-02-16 | Hitachi High-Technologies Corporation | Defect inspection method and apparatus |
| JP2009014510A (ja) | 2007-07-04 | 2009-01-22 | Hitachi High-Technologies Corp | 検査方法及び検査装置 |
| JP5873227B2 (ja) | 2007-12-06 | 2016-03-01 | エフ・イ−・アイ・カンパニー | デコレーションを用いたスライス・アンド・ビュー |
| JP5425593B2 (ja) | 2009-11-13 | 2014-02-26 | ルネサスエレクトロニクス株式会社 | Ｅｕｖマスクの欠陥検査方法、ｅｕｖマスクの製造方法、ｅｕｖマスク検査装置、および、半導体装置の製造方法 |
| JP5560921B2 (ja) * | 2010-06-08 | 2014-07-30 | 新日鐵住金株式会社 | 欠陥識別マーカー付き基板の製造方法 |
| JP5659086B2 (ja) * | 2011-05-30 | 2015-01-28 | 株式会社東芝 | 反射型マスクの欠陥修正方法 |
| DE102011079382B4 (de) | 2011-07-19 | 2020-11-12 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Analysieren und zum Beseitigen eines Defekts einer EUV Maske |
| JP5712079B2 (ja) * | 2011-07-29 | 2015-05-07 | 株式会社日立ハイテクノロジーズ | 欠陥検査装置および欠陥検査方法 |
| US9053390B2 (en) * | 2012-08-14 | 2015-06-09 | Kla-Tencor Corporation | Automated inspection scenario generation |
| US9581430B2 (en) | 2012-10-19 | 2017-02-28 | Kla-Tencor Corporation | Phase characterization of targets |
| US9075027B2 (en) * | 2012-11-21 | 2015-07-07 | Kla-Tencor Corporation | Apparatus and methods for detecting defects in vertical memory |
| US8912495B2 (en) | 2012-11-21 | 2014-12-16 | Kla-Tencor Corp. | Multi-spectral defect inspection for 3D wafers |
| US10769320B2 (en) | 2012-12-18 | 2020-09-08 | Kla-Tencor Corporation | Integrated use of model-based metrology and a process model |
| US9291554B2 (en) | 2013-02-05 | 2016-03-22 | Kla-Tencor Corporation | Method of electromagnetic modeling of finite structures and finite illumination for metrology and inspection |
| US9389349B2 (en) | 2013-03-15 | 2016-07-12 | Kla-Tencor Corporation | System and method to determine depth for optical wafer inspection |
| US9696264B2 (en) * | 2013-04-03 | 2017-07-04 | Kla-Tencor Corporation | Apparatus and methods for determining defect depths in vertical stack memory |
| US9734422B2 (en) * | 2014-11-12 | 2017-08-15 | Kla-Tencor Corporation | System and method for enhanced defect detection with a digital matched filter |
| US10747830B2 (en) * | 2014-11-21 | 2020-08-18 | Mesh Labs Inc. | Method and system for displaying electronic information |
| US9599573B2 (en) * | 2014-12-02 | 2017-03-21 | Kla-Tencor Corporation | Inspection systems and techniques with enhanced detection |
-
2017
- 2017-02-13 US US15/430,817 patent/US10082470B2/en not_active Expired - Fee Related
- 2017-09-26 SG SG11201900913VA patent/SG11201900913VA/en unknown
- 2017-09-26 KR KR1020197011898A patent/KR102235580B1/ko active Active
- 2017-09-26 WO PCT/US2017/053540 patent/WO2018064072A1/en not_active Ceased
- 2017-09-26 CN CN201780055520.4A patent/CN109690748B/zh active Active
- 2017-09-26 JP JP2019516495A patent/JP6918931B2/ja active Active
- 2017-09-27 TW TW106133040A patent/TWI722246B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019535138A (ja) | 2019-12-05 |
| CN109690748B (zh) | 2020-07-28 |
| JP6918931B2 (ja) | 2021-08-11 |
| KR20190049890A (ko) | 2019-05-09 |
| TW201814873A (zh) | 2018-04-16 |
| US10082470B2 (en) | 2018-09-25 |
| TWI722246B (zh) | 2021-03-21 |
| WO2018064072A1 (en) | 2018-04-05 |
| KR102235580B1 (ko) | 2021-04-01 |
| CN109690748A (zh) | 2019-04-26 |
| US20180088056A1 (en) | 2018-03-29 |
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