SG11201809720VA - Method for selecting template assembly, method for polishing workpiece, and template assembly - Google Patents

Method for selecting template assembly, method for polishing workpiece, and template assembly

Info

Publication number
SG11201809720VA
SG11201809720VA SG11201809720VA SG11201809720VA SG11201809720VA SG 11201809720V A SG11201809720V A SG 11201809720VA SG 11201809720V A SG11201809720V A SG 11201809720VA SG 11201809720V A SG11201809720V A SG 11201809720VA SG 11201809720V A SG11201809720V A SG 11201809720VA
Authority
SG
Singapore
Prior art keywords
template assembly
selecting
polishing workpiece
assembly
polishing
Prior art date
Application number
SG11201809720VA
Other languages
English (en)
Inventor
Kazuya Sato
Naoki Kamihama
Hiromasa Hashimoto
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of SG11201809720VA publication Critical patent/SG11201809720VA/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • B24B37/32Retaining rings
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/02Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/24Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/30Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/306Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces for measuring evenness
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Length Measuring Devices By Optical Means (AREA)
SG11201809720VA 2016-05-13 2017-03-14 Method for selecting template assembly, method for polishing workpiece, and template assembly SG11201809720VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016096794A JP6508123B2 (ja) 2016-05-13 2016-05-13 テンプレートアセンブリの選別方法及びワークの研磨方法並びにテンプレートアセンブリ
PCT/JP2017/010203 WO2017195460A1 (ja) 2016-05-13 2017-03-14 テンプレートアセンブリの選別方法及びワークの研磨方法並びにテンプレートアセンブリ

Publications (1)

Publication Number Publication Date
SG11201809720VA true SG11201809720VA (en) 2018-12-28

Family

ID=60266919

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201809720VA SG11201809720VA (en) 2016-05-13 2017-03-14 Method for selecting template assembly, method for polishing workpiece, and template assembly

Country Status (8)

Country Link
US (1) US11731236B2 (enrdf_load_stackoverflow)
JP (1) JP6508123B2 (enrdf_load_stackoverflow)
KR (1) KR102337600B1 (enrdf_load_stackoverflow)
CN (1) CN109070308B (enrdf_load_stackoverflow)
DE (1) DE112017002055B4 (enrdf_load_stackoverflow)
SG (1) SG11201809720VA (enrdf_load_stackoverflow)
TW (1) TWI722164B (enrdf_load_stackoverflow)
WO (1) WO2017195460A1 (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6508123B2 (ja) * 2016-05-13 2019-05-08 信越半導体株式会社 テンプレートアセンブリの選別方法及びワークの研磨方法並びにテンプレートアセンブリ
JP7070502B2 (ja) * 2019-05-16 2022-05-18 信越半導体株式会社 測定装置および研磨ヘッドの選定方法ならびにウエーハの研磨方法
JP7388324B2 (ja) * 2019-12-05 2023-11-29 株式会社Sumco ウェーハの片面研磨方法、ウェーハの製造方法、およびウェーハの片面研磨装置
CN114406896A (zh) * 2022-01-25 2022-04-29 上海江丰平芯电子科技有限公司 一种快速检测寿命的保持环及其使用方法

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JP2632738B2 (ja) * 1990-04-27 1997-07-23 信越半導体 株式会社 パッキングパッド、および半導体ウェーハの研磨方法
JP2000296461A (ja) * 1999-04-13 2000-10-24 Speedfam-Ipec Co Ltd バッキングパッド構造体
DE60138338D1 (de) * 2000-06-20 2009-05-28 Kurita Water Ind Ltd Brennstoffzellenstromversorgungssystem und Betriebsverfahren
US6709981B2 (en) * 2000-08-16 2004-03-23 Memc Electronic Materials, Inc. Method and apparatus for processing a semiconductor wafer using novel final polishing method
JP3838341B2 (ja) * 2001-09-14 2006-10-25 信越半導体株式会社 ウェーハの形状評価方法及びウェーハ並びにウェーハの選別方法
US8268114B2 (en) * 2001-09-28 2012-09-18 Shin-Etsu Handotai Co., Ltd. Workpiece holder for polishing, workpiece polishing apparatus and polishing method
TW545580U (en) * 2002-06-07 2003-08-01 Nanya Technology Corp CMP device of measuring apparatus with a notched size for measuring the guide ring of wafer edge
JP2007287787A (ja) 2006-04-13 2007-11-01 Elpida Memory Inc 半導体装置の製造方法及び装置
JP5157148B2 (ja) * 2006-12-11 2013-03-06 ダイキン工業株式会社 圧縮機
US20080299882A1 (en) * 2007-05-30 2008-12-04 Nippon Seimitsu Denshi Co., Ltd. Retainer-ring of cmp (chemical mechanical polishing) machine
JP2008302464A (ja) * 2007-06-07 2008-12-18 Renesas Technology Corp 研磨装置およびそれを用いた半導体装置の製造方法
JP2009260142A (ja) * 2008-04-18 2009-11-05 Panasonic Corp ウェハ研磨装置及びウェハ研磨方法
KR20090124017A (ko) * 2008-05-29 2009-12-03 주식회사 동부하이텍 Cmp 장치의 리테이너링
SG192518A1 (en) 2008-07-31 2013-08-30 Shinetsu Handotai Kk Wafer polishing method
JP2010247254A (ja) * 2009-04-13 2010-11-04 Shin Etsu Handotai Co Ltd 研磨ヘッドの製造方法及び研磨装置
JP5504901B2 (ja) * 2010-01-13 2014-05-28 株式会社Sumco 研磨パッドの形状修正方法
JP5303491B2 (ja) * 2010-02-19 2013-10-02 信越半導体株式会社 研磨ヘッド及び研磨装置
JP2013004928A (ja) * 2011-06-21 2013-01-07 Shin Etsu Handotai Co Ltd 研磨ヘッド、研磨装置及びワークの研磨方法
KR20140048894A (ko) * 2011-06-29 2014-04-24 신에쯔 한도타이 가부시키가이샤 연마 헤드 및 연마 장치
JP5807580B2 (ja) * 2012-02-15 2015-11-10 信越半導体株式会社 研磨ヘッド及び研磨装置
JP5976522B2 (ja) 2012-05-31 2016-08-23 株式会社荏原製作所 研磨装置および研磨方法
JP5821883B2 (ja) * 2013-03-22 2015-11-24 信越半導体株式会社 テンプレートアセンブリ及びテンプレートアセンブリの製造方法
JP5955271B2 (ja) * 2013-06-04 2016-07-20 信越半導体株式会社 研磨ヘッドの製造方法
JP6344950B2 (ja) * 2014-03-31 2018-06-20 株式会社荏原製作所 研磨装置及び研磨方法
JP2015218440A (ja) 2014-05-14 2015-12-07 住友林業株式会社 複数階を有する建物内の壁構造、および建物
JP6393127B2 (ja) * 2014-09-10 2018-09-19 丸石産業株式会社 保持パッド
JP6394569B2 (ja) * 2015-11-06 2018-09-26 信越半導体株式会社 ウェーハの研磨方法及び研磨装置
JP6508123B2 (ja) * 2016-05-13 2019-05-08 信越半導体株式会社 テンプレートアセンブリの選別方法及びワークの研磨方法並びにテンプレートアセンブリ

Also Published As

Publication number Publication date
US11731236B2 (en) 2023-08-22
DE112017002055B4 (de) 2024-06-06
DE112017002055T5 (de) 2018-12-27
US20190126431A1 (en) 2019-05-02
TW201805115A (zh) 2018-02-16
KR20190002506A (ko) 2019-01-08
TWI722164B (zh) 2021-03-21
CN109070308B (zh) 2021-01-12
WO2017195460A1 (ja) 2017-11-16
KR102337600B1 (ko) 2021-12-10
JP2017202556A (ja) 2017-11-16
CN109070308A (zh) 2018-12-21
JP6508123B2 (ja) 2019-05-08

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