SG11201808160PA - Shutter device used for exposure in lithography machine, and method for use thereof - Google Patents

Shutter device used for exposure in lithography machine, and method for use thereof

Info

Publication number
SG11201808160PA
SG11201808160PA SG11201808160PA SG11201808160PA SG11201808160PA SG 11201808160P A SG11201808160P A SG 11201808160PA SG 11201808160P A SG11201808160P A SG 11201808160PA SG 11201808160P A SG11201808160P A SG 11201808160PA SG 11201808160P A SG11201808160P A SG 11201808160PA
Authority
SG
Singapore
Prior art keywords
shutter
shutter blade
rotating motor
rotation center
blade
Prior art date
Application number
SG11201808160PA
Other languages
English (en)
Inventor
Menglai Chen
Fuping Zhang
Original Assignee
Shanghai Micro Electronics Equipment Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Micro Electronics Equipment Group Co Ltd filed Critical Shanghai Micro Electronics Equipment Group Co Ltd
Publication of SG11201808160PA publication Critical patent/SG11201808160PA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G03F7/70366—Rotary scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shutters For Cameras (AREA)
SG11201808160PA 2016-03-31 2017-03-31 Shutter device used for exposure in lithography machine, and method for use thereof SG11201808160PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610200735.8A CN107290938B (zh) 2016-03-31 2016-03-31 一种用于光刻机曝光的快门装置及其使用方法
PCT/CN2017/078936 WO2017167259A1 (zh) 2016-03-31 2017-03-31 一种用于光刻机曝光的快门装置及其使用方法

Publications (1)

Publication Number Publication Date
SG11201808160PA true SG11201808160PA (en) 2018-10-30

Family

ID=59963550

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201808160PA SG11201808160PA (en) 2016-03-31 2017-03-31 Shutter device used for exposure in lithography machine, and method for use thereof

Country Status (7)

Country Link
US (1) US10712668B2 (zh)
JP (1) JP6649505B2 (zh)
KR (1) KR102173216B1 (zh)
CN (1) CN107290938B (zh)
SG (1) SG11201808160PA (zh)
TW (1) TWI630466B (zh)
WO (1) WO2017167259A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110196532B (zh) * 2018-02-27 2021-03-16 上海微电子装备（集团）股份有限公司 光刻机安全快门装置
JP7352332B2 (ja) * 2018-05-14 2023-09-28 キヤノン株式会社 露光装置
JP2021139980A (ja) * 2020-03-03 2021-09-16 キオクシア株式会社 半導体製造装置および半導体装置の製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS607870B2 (ja) * 1978-05-16 1985-02-27 富士電機株式会社 撮像方式
JPS60241055A (ja) * 1984-05-15 1985-11-29 Oak Seisakusho:Kk シヤツタ−開閉装置
JPS6136719A (ja) * 1984-07-30 1986-02-21 Nec Corp 同期式光路開閉装置及びその操作法
JP2745413B2 (ja) * 1988-09-02 1998-04-28 キヤノン株式会社 露光装置
JPH03114824U (zh) * 1990-05-31 1991-11-26
JPH04317315A (ja) * 1991-04-16 1992-11-09 Canon Inc シャッター装置
US6476905B1 (en) * 2000-01-20 2002-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Step and scan exposure system equipped with a plurality of attenuator blades for exposure control
JP4346320B2 (ja) * 2003-02-05 2009-10-21 大日本印刷株式会社 露光方法及び露光装置
KR100598095B1 (ko) * 2003-07-10 2006-07-07 삼성전자주식회사 노광 장치
CN1673868A (zh) * 2004-03-26 2005-09-28 力晶半导体股份有限公司 具有可变快门的曝光机台及其曝光方法
JP2008141016A (ja) * 2006-12-01 2008-06-19 Canon Inc シャッタ羽根装置、シャッタユニット、撮像装置、露光装置およびデバイス製造方法
CN102096325B (zh) * 2009-12-10 2013-01-16 上海微电子装备有限公司 光强衰减装置及其衰减方法
KR20120102387A (ko) 2011-03-08 2012-09-18 삼성전자주식회사 표시 장치와 이의 제조 방법
CN103293864B (zh) 2012-02-27 2015-05-13 上海微电子装备有限公司 一种光刻曝光剂量的控制装置及控制方法
CN102707577B (zh) * 2012-05-23 2013-11-27 哈尔滨工业大学 宏微双机构伺服控制系统及其控制方法
CN103631066A (zh) 2012-08-21 2014-03-12 上海微电子装备有限公司 一种用于光刻曝光的快门装置及其使用方法
CN203535380U (zh) 2013-10-29 2014-04-09 中芯国际集成电路制造(北京)有限公司 快门装置以及光刻设备
JP6415057B2 (ja) * 2014-02-07 2018-10-31 キヤノン株式会社 露光装置、および物品の製造方法
JP6313795B2 (ja) * 2016-03-03 2018-04-18 キヤノン株式会社 シャッタユニット、リソグラフィ装置、インプリント装置、及び物品の製造方法

Also Published As

Publication number Publication date
WO2017167259A1 (zh) 2017-10-05
JP2019516125A (ja) 2019-06-13
US20190369501A1 (en) 2019-12-05
CN107290938B (zh) 2019-05-31
KR20180124968A (ko) 2018-11-21
CN107290938A (zh) 2017-10-24
TWI630466B (zh) 2018-07-21
JP6649505B2 (ja) 2020-02-19
US10712668B2 (en) 2020-07-14
KR102173216B1 (ko) 2020-11-03
TW201736983A (zh) 2017-10-16

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