SG11201806311RA - Leveler compositions for use in copper deposition in manufacture of microelectronics - Google Patents

Leveler compositions for use in copper deposition in manufacture of microelectronics

Info

Publication number
SG11201806311RA
SG11201806311RA SG11201806311RA SG11201806311RA SG11201806311RA SG 11201806311R A SG11201806311R A SG 11201806311RA SG 11201806311R A SG11201806311R A SG 11201806311RA SG 11201806311R A SG11201806311R A SG 11201806311RA SG 11201806311R A SG11201806311R A SG 11201806311RA
Authority
SG
Singapore
Prior art keywords
international
waterbury
street
macdermid
aqueous electrolytic
Prior art date
Application number
SG11201806311RA
Other languages
English (en)
Inventor
Vincent Paneccasio
Kyle Whitten
Thomas Richardson
Ivan Li
Original Assignee
Macdermid Enthone Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macdermid Enthone Inc filed Critical Macdermid Enthone Inc
Publication of SG11201806311RA publication Critical patent/SG11201806311RA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G65/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G65/02—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from cyclic ethers by opening of the heterocyclic ring
    • C08G65/04—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from cyclic ethers by opening of the heterocyclic ring from cyclic ethers only
    • C08G65/22—Cyclic ethers having at least one atom other than carbon and hydrogen outside the ring
    • C08G65/24—Epihalohydrins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G65/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G65/02—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from cyclic ethers by opening of the heterocyclic ring
    • C08G65/32—Polymers modified by chemical after-treatment
    • C08G65/329—Polymers modified by chemical after-treatment with organic compounds
    • C08G65/333—Polymers modified by chemical after-treatment with organic compounds containing nitrogen
    • C08G65/33396—Polymers modified by chemical after-treatment with organic compounds containing nitrogen having oxygen in addition to nitrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L71/00—Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
    • C08L71/02—Polyalkylene oxides
    • C08L71/03—Polyepihalohydrins
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/188—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by direct electroplating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
    • H05K3/424—Plated through-holes or plated via connections characterised by electroplating method by direct electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486—Via connections through the substrate with or without pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0703—Plating
    • H05K2203/0723—Electroplating, e.g. finish plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Ceramic Engineering (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
SG11201806311RA 2016-02-12 2017-01-24 Leveler compositions for use in copper deposition in manufacture of microelectronics SG11201806311RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662294643P 2016-02-12 2016-02-12
PCT/US2017/014651 WO2017139087A1 (en) 2016-02-12 2017-01-24 Leveler compositions for use in copper deposition in manufacture of microelectronics

Publications (1)

Publication Number Publication Date
SG11201806311RA true SG11201806311RA (en) 2018-08-30

Family

ID=59562390

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201806311RA SG11201806311RA (en) 2016-02-12 2017-01-24 Leveler compositions for use in copper deposition in manufacture of microelectronics
SG10202111743WA SG10202111743WA (en) 2016-02-12 2017-01-24 Leveler compositions for use in copper deposition in manufacture of microelectronics

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10202111743WA SG10202111743WA (en) 2016-02-12 2017-01-24 Leveler compositions for use in copper deposition in manufacture of microelectronics

Country Status (9)

Country Link
US (3) US10519557B2 (de)
EP (1) EP3414277B1 (de)
JP (1) JP6726758B2 (de)
KR (1) KR102175377B1 (de)
CN (1) CN108779240B (de)
MY (1) MY193571A (de)
SG (2) SG11201806311RA (de)
TW (1) TWI643981B (de)
WO (1) WO2017139087A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018057590A1 (en) 2016-09-22 2018-03-29 Macdermid Enthone Inc. Copper deposition in wafer level packaging of integrated circuits
CN110100048B (zh) * 2016-12-20 2022-06-21 巴斯夫欧洲公司 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物
CN110424030B (zh) * 2019-08-30 2020-06-30 广州三孚新材料科技股份有限公司 无氰碱性电镀铜液及其制备和在挠性印刷线路板中的应用
CN114031769B (zh) * 2021-11-29 2024-03-26 广州市慧科高新材料科技有限公司 一种季铵盐类整平剂及其制备方法、含其的电镀液和电镀方法

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US3824158A (en) * 1973-01-26 1974-07-16 Hull R & Co Inc Composition of baths for electrodeposition of bright zinc
US3864288A (en) * 1973-10-15 1975-02-04 Goodrich Co B F Quaternized polyepihalohydrin thickening agent
US4007098A (en) * 1975-09-04 1977-02-08 Columbia Chemical Corporation Baths and additives for the electrodeposition of bright zinc
US4038161A (en) * 1976-03-05 1977-07-26 R. O. Hull & Company, Inc. Acid copper plating and additive composition therefor
JPS5930107B2 (ja) * 1977-01-21 1984-07-25 日本ゼオン株式会社 抗凝血性医療用材料
US4336114A (en) 1981-03-26 1982-06-22 Hooker Chemicals & Plastics Corp. Electrodeposition of bright copper
US4555315A (en) * 1984-05-29 1985-11-26 Omi International Corporation High speed copper electroplating process and bath therefor
US6183622B1 (en) * 1998-07-13 2001-02-06 Enthone-Omi, Inc. Ductility additives for electrorefining and electrowinning
MY144574A (en) * 1998-09-14 2011-10-14 Ibiden Co Ltd Printed circuit board and method for its production
US7384533B2 (en) * 2001-07-24 2008-06-10 3M Innovative Properties Company Electrolytic processes with reduced cell voltage and gas formation
US6676823B1 (en) 2002-03-18 2004-01-13 Taskem, Inc. High speed acid copper plating
EP1574599B1 (de) 2002-12-18 2010-07-07 Nippon Mining & Metals Co., Ltd. Kupferelektrolyselösung und damit hergestellte elektrolytkupferfolie
US7128822B2 (en) * 2003-06-04 2006-10-31 Shipley Company, L.L.C. Leveler compounds
US20050092611A1 (en) * 2003-11-03 2005-05-05 Semitool, Inc. Bath and method for high rate copper deposition
US20060062753A1 (en) 2004-09-17 2006-03-23 Ali Naraghi Polymeric quaternary ammonium salts useful as corrosion inhibitors and biocides
TWI400365B (zh) 2004-11-12 2013-07-01 Enthone 微電子裝置上的銅電沈積
JP5497261B2 (ja) * 2006-12-15 2014-05-21 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． インジウム組成物
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Also Published As

Publication number Publication date
CN108779240B (zh) 2021-07-20
WO2017139087A1 (en) 2017-08-17
TWI643981B (zh) 2018-12-11
US20200063280A1 (en) 2020-02-27
US20170233883A1 (en) 2017-08-17
JP2019510875A (ja) 2019-04-18
EP3414277A4 (de) 2020-02-26
US10519557B2 (en) 2019-12-31
JP6726758B2 (ja) 2020-07-22
TW201802297A (zh) 2018-01-16
EP3414277B1 (de) 2023-01-25
MY193571A (en) 2022-10-19
US11168406B2 (en) 2021-11-09
EP3414277A1 (de) 2018-12-19
KR20180114102A (ko) 2018-10-17
CN108779240A (zh) 2018-11-09
KR102175377B1 (ko) 2020-11-06
SG10202111743WA (en) 2021-12-30
US20210310141A1 (en) 2021-10-07

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