SG11201707354XA - Non-volatile sram memory cell and non-volatile semiconductor storage device - Google Patents

Non-volatile sram memory cell and non-volatile semiconductor storage device

Info

Publication number
SG11201707354XA
SG11201707354XA SG11201707354XA SG11201707354XA SG11201707354XA SG 11201707354X A SG11201707354X A SG 11201707354XA SG 11201707354X A SG11201707354X A SG 11201707354XA SG 11201707354X A SG11201707354X A SG 11201707354XA SG 11201707354X A SG11201707354X A SG 11201707354XA
Authority
SG
Singapore
Prior art keywords
volatile
storage device
memory cell
semiconductor storage
sram memory
Prior art date
Application number
SG11201707354XA
Other languages
English (en)
Inventor
Yutaka Shinagawa
Yasuhiro Taniguchi
Hideo Kasai
Ryotaro Sakurai
Yasuhiko Kawashima
Tatsuro Toya
Kosuke Okuyama
Original Assignee
Floadia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Floadia Corp filed Critical Floadia Corp
Publication of SG11201707354XA publication Critical patent/SG11201707354XA/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/0063—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is an EEPROM element, e.g. a floating gate or MNOS transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/18—Peripheral circuit regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Non-Volatile Memory (AREA)
SG11201707354XA 2015-03-27 2016-03-18 Non-volatile sram memory cell and non-volatile semiconductor storage device SG11201707354XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015065956A JP5993479B1 (ja) 2015-03-27 2015-03-27 不揮発性ｓｒａｍメモリセル、および不揮発性半導体記憶装置
PCT/JP2016/058843 WO2016158529A1 (ja) 2015-03-27 2016-03-18 不揮発性ｓｒａｍメモリセル、および不揮発性半導体記憶装置

Publications (1)

Publication Number Publication Date
SG11201707354XA true SG11201707354XA (en) 2017-10-30

Family

ID=56921072

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201707354XA SG11201707354XA (en) 2015-03-27 2016-03-18 Non-volatile sram memory cell and non-volatile semiconductor storage device

Country Status (9)

Country Link
US (1) US10074658B2 (zh)
EP (1) EP3276654A4 (zh)
JP (1) JP5993479B1 (zh)
KR (1) KR102512901B1 (zh)
CN (1) CN107484434B (zh)
IL (1) IL254455B (zh)
SG (1) SG11201707354XA (zh)
TW (2) TWI615923B (zh)
WO (1) WO2016158529A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10276581B1 (en) 2017-10-31 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit chip and manufacturing method thereof
JP6368848B1 (ja) * 2017-12-27 2018-08-01 株式会社フローディア 不揮発性ｓｒａｍメモリセル及び不揮発性半導体記憶装置
JP7074583B2 (ja) * 2018-06-26 2022-05-24 キオクシア株式会社 半導体記憶装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5488579A (en) * 1994-04-29 1996-01-30 Motorola Inc. Three-dimensionally integrated nonvolatile SRAM cell and process
JP4058232B2 (ja) * 2000-11-29 2008-03-05 株式会社ルネサステクノロジ 半導体装置及びｉｃカード
US6531731B2 (en) * 2001-06-15 2003-03-11 Motorola, Inc. Integration of two memory types on the same integrated circuit
JP2005142354A (ja) * 2003-11-06 2005-06-02 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置及びその駆動方法及びその製造方法
KR100580292B1 (ko) * 2003-12-31 2006-05-15 동부일렉트로닉스 주식회사 비 휘발성 메모리 장치
US7164608B2 (en) * 2004-07-28 2007-01-16 Aplus Flash Technology, Inc. NVRAM memory cell architecture that integrates conventional SRAM and flash cells
JP2010278314A (ja) * 2009-05-29 2010-12-09 Renesas Electronics Corp 半導体装置およびその製造方法
JP2011129816A (ja) * 2009-12-21 2011-06-30 Renesas Electronics Corp 半導体装置
KR101979299B1 (ko) * 2012-12-26 2019-09-03 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 그 제조방법

Also Published As

Publication number Publication date
CN107484434B (zh) 2019-04-12
US10074658B2 (en) 2018-09-11
JP5993479B1 (ja) 2016-09-14
KR20170131843A (ko) 2017-11-30
TWI615923B (zh) 2018-02-21
TW201707148A (zh) 2017-02-16
KR102512901B1 (ko) 2023-03-23
IL254455B (en) 2019-11-28
TW201803032A (zh) 2018-01-16
JP2016186970A (ja) 2016-10-27
EP3276654A1 (en) 2018-01-31
TWI607529B (zh) 2017-12-01
US20180083014A1 (en) 2018-03-22
IL254455A0 (en) 2017-11-30
EP3276654A4 (en) 2019-04-10
WO2016158529A1 (ja) 2016-10-06
CN107484434A (zh) 2017-12-15

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