SG11201701901UA - Non-volatile semiconductor storage device - Google Patents
Non-volatile semiconductor storage deviceInfo
- Publication number
- SG11201701901UA SG11201701901UA SG11201701901UA SG11201701901UA SG11201701901UA SG 11201701901U A SG11201701901U A SG 11201701901UA SG 11201701901U A SG11201701901U A SG 11201701901UA SG 11201701901U A SG11201701901U A SG 11201701901UA SG 11201701901U A SG11201701901U A SG 11201701901UA
- Authority
- SG
- Singapore
- Prior art keywords
- storage device
- semiconductor storage
- volatile semiconductor
- volatile
- storage
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/08—Control thereof
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2014/074297 WO2016038743A1 (en) | 2014-09-12 | 2014-09-12 | Nonvolatile semiconductor storage device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201701901UA true SG11201701901UA (en) | 2017-04-27 |
Family
ID=55458527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201701901UA SG11201701901UA (en) | 2014-09-12 | 2014-09-12 | Non-volatile semiconductor storage device |
Country Status (5)
Country | Link |
---|---|
US (1) | US10014064B2 (en) |
CN (1) | CN106796819B (en) |
SG (1) | SG11201701901UA (en) |
TW (1) | TWI567746B (en) |
WO (1) | WO2016038743A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020027674A (en) * | 2018-08-10 | 2020-02-20 | キオクシア株式会社 | Semiconductor memory |
JP2022050043A (en) | 2020-09-17 | 2022-03-30 | キオクシア株式会社 | Semiconductor storage device |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6222762B1 (en) * | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
US6353554B1 (en) * | 1995-02-27 | 2002-03-05 | Btg International Inc. | Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell |
KR100253868B1 (en) * | 1995-11-13 | 2000-05-01 | 니시무로 타이죠 | Non-volatile semiconductor memory device |
JP3781240B2 (en) | 1998-09-07 | 2006-05-31 | 株式会社ルネサステクノロジ | Nonvolatile semiconductor memory and semiconductor integrated circuit incorporating the same |
US6172909B1 (en) | 1999-08-09 | 2001-01-09 | Advanced Micro Devices, Inc. | Ramped gate technique for soft programming to tighten the Vt distribution |
JP3983969B2 (en) * | 2000-03-08 | 2007-09-26 | 株式会社東芝 | Nonvolatile semiconductor memory device |
JP4043703B2 (en) * | 2000-09-04 | 2008-02-06 | 株式会社ルネサステクノロジ | Semiconductor device, microcomputer, and flash memory |
US6906951B2 (en) * | 2001-06-14 | 2005-06-14 | Multi Level Memory Technology | Bit line reference circuits for binary and multiple-bit-per-cell memories |
US7139198B2 (en) * | 2004-01-27 | 2006-11-21 | Sandisk Corporation | Efficient verification for coarse/fine programming of non-volatile memory |
JP2008117471A (en) * | 2006-11-02 | 2008-05-22 | Toshiba Corp | Nonvolatile semiconductor storage device and nonvolatile memory system |
JP5142692B2 (en) | 2007-12-11 | 2013-02-13 | 株式会社東芝 | Nonvolatile semiconductor memory device |
JP2009238874A (en) | 2008-03-26 | 2009-10-15 | Toshiba Corp | Semiconductor memory and method for manufacturing the same |
JP5283960B2 (en) | 2008-04-23 | 2013-09-04 | 株式会社東芝 | Three-dimensional stacked nonvolatile semiconductor memory |
JP2009266944A (en) | 2008-04-23 | 2009-11-12 | Toshiba Corp | Three-dimensional stacked nonvolatile semiconductor memory |
US7969782B2 (en) * | 2008-09-26 | 2011-06-28 | Micron Technology, Inc. | Determining memory page status |
US8274828B2 (en) * | 2010-12-15 | 2012-09-25 | Fs Semiconductor Corp., Ltd. | Structures and methods for reading out non-volatile memory using referencing cells |
JP2013045478A (en) | 2011-08-23 | 2013-03-04 | Toshiba Corp | Nonvolatile semiconductor memory device |
US8971138B2 (en) * | 2011-09-01 | 2015-03-03 | Texas Instruments Incorporated | Method of screening static random access memory cells for positive bias temperature instability |
US9679664B2 (en) * | 2012-02-11 | 2017-06-13 | Samsung Electronics Co., Ltd. | Method and system for providing a smart memory architecture |
JP2014006940A (en) | 2012-06-21 | 2014-01-16 | Toshiba Corp | Semiconductor memory device |
US9406384B2 (en) * | 2012-11-28 | 2016-08-02 | Micron Technology, Inc. | Matching semiconductor circuits |
US8773924B2 (en) * | 2012-12-05 | 2014-07-08 | Lsi Corporation | Read assist scheme for reducing read access time in a memory |
US8843674B2 (en) * | 2013-02-26 | 2014-09-23 | Kabushiki Kaisha Toshiba | Semiconductor memory device capable of testing signal integrity |
KR20160043999A (en) * | 2013-08-15 | 2016-04-22 | 르네사스 일렉트로닉스 가부시키가이샤 | Semiconductor device |
US9520195B2 (en) * | 2013-10-09 | 2016-12-13 | Macronix International Co., Ltd. | Sensing amplifier utilizing bit line clamping devices and sensing method thereof |
US9123424B2 (en) * | 2013-12-17 | 2015-09-01 | Sandisk Technologies Inc. | Optimizing pass voltage and initial program voltage based on performance of non-volatile memory |
-
2014
- 2014-09-12 WO PCT/JP2014/074297 patent/WO2016038743A1/en active Application Filing
- 2014-09-12 SG SG11201701901UA patent/SG11201701901UA/en unknown
- 2014-09-12 CN CN201480081533.5A patent/CN106796819B/en active Active
-
2015
- 2015-03-03 TW TW104106724A patent/TWI567746B/en active
-
2017
- 2017-03-10 US US15/456,153 patent/US10014064B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI567746B (en) | 2017-01-21 |
CN106796819A (en) | 2017-05-31 |
US20170186492A1 (en) | 2017-06-29 |
US10014064B2 (en) | 2018-07-03 |
WO2016038743A1 (en) | 2016-03-17 |
CN106796819B (en) | 2020-06-16 |
TW201611013A (en) | 2016-03-16 |
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