SG11201701901UA - Non-volatile semiconductor storage device - Google Patents

Non-volatile semiconductor storage device

Info

Publication number
SG11201701901UA
SG11201701901UA SG11201701901UA SG11201701901UA SG11201701901UA SG 11201701901U A SG11201701901U A SG 11201701901UA SG 11201701901U A SG11201701901U A SG 11201701901UA SG 11201701901U A SG11201701901U A SG 11201701901UA SG 11201701901U A SG11201701901U A SG 11201701901UA
Authority
SG
Singapore
Prior art keywords
storage device
semiconductor storage
volatile semiconductor
volatile
storage
Prior art date
Application number
SG11201701901UA
Inventor
Yoshihiko Kamata
Koji Tabata
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of SG11201701901UA publication Critical patent/SG11201701901UA/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/08—Control thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
SG11201701901UA 2014-09-12 2014-09-12 Non-volatile semiconductor storage device SG11201701901UA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2014/074297 WO2016038743A1 (en) 2014-09-12 2014-09-12 Nonvolatile semiconductor storage device

Publications (1)

Publication Number Publication Date
SG11201701901UA true SG11201701901UA (en) 2017-04-27

Family

ID=55458527

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201701901UA SG11201701901UA (en) 2014-09-12 2014-09-12 Non-volatile semiconductor storage device

Country Status (5)

Country Link
US (1) US10014064B2 (en)
CN (1) CN106796819B (en)
SG (1) SG11201701901UA (en)
TW (1) TWI567746B (en)
WO (1) WO2016038743A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020027674A (en) * 2018-08-10 2020-02-20 キオクシア株式会社 Semiconductor memory
JP2022050043A (en) 2020-09-17 2022-03-30 キオクシア株式会社 Semiconductor storage device

Family Cites Families (26)

* Cited by examiner, † Cited by third party
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US6222762B1 (en) * 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US6353554B1 (en) * 1995-02-27 2002-03-05 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
KR100253868B1 (en) * 1995-11-13 2000-05-01 니시무로 타이죠 Non-volatile semiconductor memory device
JP3781240B2 (en) 1998-09-07 2006-05-31 株式会社ルネサステクノロジ Nonvolatile semiconductor memory and semiconductor integrated circuit incorporating the same
US6172909B1 (en) 1999-08-09 2001-01-09 Advanced Micro Devices, Inc. Ramped gate technique for soft programming to tighten the Vt distribution
JP3983969B2 (en) * 2000-03-08 2007-09-26 株式会社東芝 Nonvolatile semiconductor memory device
JP4043703B2 (en) * 2000-09-04 2008-02-06 株式会社ルネサステクノロジ Semiconductor device, microcomputer, and flash memory
US6906951B2 (en) * 2001-06-14 2005-06-14 Multi Level Memory Technology Bit line reference circuits for binary and multiple-bit-per-cell memories
US7139198B2 (en) * 2004-01-27 2006-11-21 Sandisk Corporation Efficient verification for coarse/fine programming of non-volatile memory
JP2008117471A (en) * 2006-11-02 2008-05-22 Toshiba Corp Nonvolatile semiconductor storage device and nonvolatile memory system
JP5142692B2 (en) 2007-12-11 2013-02-13 株式会社東芝 Nonvolatile semiconductor memory device
JP2009238874A (en) 2008-03-26 2009-10-15 Toshiba Corp Semiconductor memory and method for manufacturing the same
JP5283960B2 (en) 2008-04-23 2013-09-04 株式会社東芝 Three-dimensional stacked nonvolatile semiconductor memory
JP2009266944A (en) 2008-04-23 2009-11-12 Toshiba Corp Three-dimensional stacked nonvolatile semiconductor memory
US7969782B2 (en) * 2008-09-26 2011-06-28 Micron Technology, Inc. Determining memory page status
US8274828B2 (en) * 2010-12-15 2012-09-25 Fs Semiconductor Corp., Ltd. Structures and methods for reading out non-volatile memory using referencing cells
JP2013045478A (en) 2011-08-23 2013-03-04 Toshiba Corp Nonvolatile semiconductor memory device
US8971138B2 (en) * 2011-09-01 2015-03-03 Texas Instruments Incorporated Method of screening static random access memory cells for positive bias temperature instability
US9679664B2 (en) * 2012-02-11 2017-06-13 Samsung Electronics Co., Ltd. Method and system for providing a smart memory architecture
JP2014006940A (en) 2012-06-21 2014-01-16 Toshiba Corp Semiconductor memory device
US9406384B2 (en) * 2012-11-28 2016-08-02 Micron Technology, Inc. Matching semiconductor circuits
US8773924B2 (en) * 2012-12-05 2014-07-08 Lsi Corporation Read assist scheme for reducing read access time in a memory
US8843674B2 (en) * 2013-02-26 2014-09-23 Kabushiki Kaisha Toshiba Semiconductor memory device capable of testing signal integrity
KR20160043999A (en) * 2013-08-15 2016-04-22 르네사스 일렉트로닉스 가부시키가이샤 Semiconductor device
US9520195B2 (en) * 2013-10-09 2016-12-13 Macronix International Co., Ltd. Sensing amplifier utilizing bit line clamping devices and sensing method thereof
US9123424B2 (en) * 2013-12-17 2015-09-01 Sandisk Technologies Inc. Optimizing pass voltage and initial program voltage based on performance of non-volatile memory

Also Published As

Publication number Publication date
TWI567746B (en) 2017-01-21
CN106796819A (en) 2017-05-31
US20170186492A1 (en) 2017-06-29
US10014064B2 (en) 2018-07-03
WO2016038743A1 (en) 2016-03-17
CN106796819B (en) 2020-06-16
TW201611013A (en) 2016-03-16

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