SG10201912373QA - Memory device and capacitive energy storage device - Google Patents

Memory device and capacitive energy storage device

Info

Publication number
SG10201912373QA
SG10201912373QA SG10201912373QA SG10201912373QA SG10201912373QA SG 10201912373Q A SG10201912373Q A SG 10201912373QA SG 10201912373Q A SG10201912373Q A SG 10201912373QA SG 10201912373Q A SG10201912373Q A SG 10201912373QA SG 10201912373Q A SG10201912373Q A SG 10201912373QA
Authority
SG
Singapore
Prior art keywords
energy storage
capacitive energy
storage device
memory device
memory
Prior art date
Application number
SG10201912373QA
Inventor
David Reginald Carver
Bradford Wesley Fulfer
Chase Andrepont
Sean Hall
Sean William Reynolds
Original Assignee
Carver Scientific Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carver Scientific Inc filed Critical Carver Scientific Inc
Publication of SG10201912373QA publication Critical patent/SG10201912373QA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
    • H01G4/385—Single unit multiple capacitors, e.g. dual capacitor in one coil
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/012—Form of non-self-supporting electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/224—Housing; Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H01G4/242—Terminals the capacitive element surrounding the terminal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/92—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by patterning layers, e.g. by etching conductive layers
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/34—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering
    • H02J7/345—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering using capacitors as storage or buffering devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
SG10201912373QA 2016-12-02 2017-11-30 Memory device and capacitive energy storage device SG10201912373QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662429651P 2016-12-02 2016-12-02
US201762458426P 2017-02-13 2017-02-13

Publications (1)

Publication Number Publication Date
SG10201912373QA true SG10201912373QA (en) 2020-02-27

Family

ID=60788697

Family Applications (4)

Application Number Title Priority Date Filing Date
SG10201912373QA SG10201912373QA (en) 2016-12-02 2017-11-30 Memory device and capacitive energy storage device
SG10201912358WA SG10201912358WA (en) 2016-12-02 2017-11-30 Memory device and capacitive energy storage device
SG10201912363TA SG10201912363TA (en) 2016-12-02 2017-11-30 Memory device and capacitive energy storage device
SG10201912381YA SG10201912381YA (en) 2016-12-02 2017-11-30 Memory device and capacitive energy storage device

Family Applications After (3)

Application Number Title Priority Date Filing Date
SG10201912358WA SG10201912358WA (en) 2016-12-02 2017-11-30 Memory device and capacitive energy storage device
SG10201912363TA SG10201912363TA (en) 2016-12-02 2017-11-30 Memory device and capacitive energy storage device
SG10201912381YA SG10201912381YA (en) 2016-12-02 2017-11-30 Memory device and capacitive energy storage device

Country Status (10)

Country Link
US (5) US10403440B2 (en)
EP (1) EP3549232A1 (en)
JP (2) JP7031891B2 (en)
KR (1) KR102519699B1 (en)
CN (2) CN115188591A (en)
AU (2) AU2017367692B2 (en)
CA (1) CA3044111A1 (en)
MX (2) MX2019006368A (en)
SG (4) SG10201912373QA (en)
WO (1) WO2018102598A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG10201912373QA (en) 2016-12-02 2020-02-27 Carver Scientific Inc Memory device and capacitive energy storage device
CA2995969C (en) * 2018-02-22 2019-08-20 Mitchell B. Miller A system and method for charging electrostatic devices utilizing displacement current, referred to as deflection converter
GB2577545B (en) 2018-09-28 2022-07-20 Power Roll Ltd Energy storage device
CN111480201B (en) * 2018-11-05 2023-10-17 深圳市汇顶科技股份有限公司 Memcapacitor, programming method of memcapacitor and capacitance type memory
US10906274B2 (en) * 2018-11-14 2021-02-02 Qorvo Us, Inc. Laminate substrate with sintered components
US11107880B2 (en) * 2019-05-10 2021-08-31 Globalfoundries U.S. Inc. Capacitor structure for integrated circuit, and related methods
CN111755264A (en) * 2020-06-28 2020-10-09 盐城市康威电子有限公司 Square capacitor polymerization heating method
US11538638B2 (en) * 2020-07-01 2022-12-27 International Business Machines Corporation Co-axial grid array capacitor assembly
US11348867B2 (en) 2020-11-05 2022-05-31 Globalfoundries U.S. Inc. Capacitor structure for integrated circuit and related methods
US11699650B2 (en) 2021-01-18 2023-07-11 Globalfoundries U.S. Inc. Integrated circuit structure with capacitor electrodes in different ILD layers, and related methods
KR20220130524A (en) 2021-03-18 2022-09-27 에스케이하이닉스 주식회사 Semiconductor device
TW202243237A (en) * 2021-04-21 2022-11-01 日商松下知識產權經營股份有限公司 Capacitor
US11437383B1 (en) * 2021-06-02 2022-09-06 Nanya Technology Corporation Method for fabricating dynamic random access memory devices
US20240020260A1 (en) * 2022-07-13 2024-01-18 Global Unichip Corporation Communication interface structure and die-to-die package

Family Cites Families (208)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2145710A (en) 1936-04-01 1939-01-31 Gen Electric Capacitance device
US2778762A (en) 1948-11-11 1957-01-22 Technograph Printed Circuits L Electric capacitor and method of making same
US2798990A (en) 1952-11-22 1957-07-09 Sprague Electric Co Electrical capacitors
GB811295A (en) 1954-08-24 1959-04-02 Photo Printed Circuits Ltd Improvements in and relating to electric capacitors
US2789990A (en) 1954-12-08 1957-04-23 American Cyanamid Co Method of preparing dithiol monocarboxylic acids and esters
US2939059A (en) * 1955-03-21 1960-05-31 Clevite Corp Capacitor of high permittivity ceramic
US2974396A (en) * 1957-01-18 1961-03-14 Sprague Electric Co Electrical capacitors
US3397085A (en) 1962-12-27 1968-08-13 Union Carbide Corp Thin film capacitors
US3235780A (en) * 1963-06-18 1966-02-15 Gen Electric Electrical capacitor and method of making the same
US3231800A (en) * 1964-10-15 1966-01-25 Sprague Electric Co Electrical capacitor
US3288728A (en) 1966-02-18 1966-11-29 Union Carbide Corp Para-xylylene copolymers
US3342754A (en) 1966-02-18 1967-09-19 Union Carbide Corp Para-xylylene polymers
US3535602A (en) 1969-05-07 1970-10-20 Nasa Capacitor and method of making same
US3616314A (en) 1969-11-24 1971-10-26 Dow Chemical Co Electrolytic process for preparing(2.2)-paracyclophane
US3638155A (en) * 1970-11-06 1972-01-25 Mega Power Corp Electrical coil having integrated capacitance and inductance
CA993058A (en) * 1973-07-26 1976-07-13 George A. Shirn Solid electrolytic capacitor with embedded counterelectrode
US3907748A (en) 1974-06-17 1975-09-23 University Patents Inc Paracyclophane polymers and the production thereof
DE2535092A1 (en) 1975-08-06 1977-02-24 Basf Ag METHOD AND DEVICE FOR PRODUCING TAPE-SHAPED MAGNETOGRAM CARRIERS
JPS54145000A (en) 1978-05-04 1979-11-12 Tdk Corp High dielectric system porcelain composite
FR2457709A1 (en) 1979-05-29 1980-12-26 Anvar NOVEL GAS ADSORPTION AGENTS USEFUL IN PARTICULAR FOR SEPARATING HYDROGEN FROM A PHASE CONTAINING IT
DE3240303C1 (en) 1982-10-30 1984-01-19 Merck Patent Gmbh, 6100 Darmstadt Process for the preparation of [2,2] -paracyclophane
US4500562A (en) 1983-03-02 1985-02-19 The United States Of America As Represented By The United States Department Of Energy Di-p-xylylene polymer and method for making the same
JPS6041786A (en) * 1983-08-17 1985-03-05 増田　閃一 Electric field device
JPS6117725U (en) * 1984-07-05 1986-02-01 太陽誘電株式会社 Composite cylindrical porcelain capacitor
JPS6157096A (en) 1984-08-28 1986-03-22 Fujitsu Ltd Ion conductor memory
US4748542A (en) 1985-05-20 1988-05-31 The Mead Corporation Solid state electrochemical device
US4638407A (en) 1985-05-20 1987-01-20 Lundsgaard Jorgen S Solid state electrochemical device
IT1191632B (en) 1985-10-30 1988-03-23 Montedison Spa PROCESS FOR THE PREPARATION OF (2,2) -PARACIOLOFANO
US4649468A (en) 1985-11-06 1987-03-10 At&T Information Systems Inc. Voltage divider circuit
US4639827A (en) * 1985-11-27 1987-01-27 North American Philips Corporation Pressure sensitive fault interrupter for a multi section AC capacitor
IT1191645B (en) 1985-12-19 1988-03-23 Montedison Spa PROCESS FOR THE PREPARATION OF (2,2) -PARACYCLOPHANE AND ITS DERIVATIVES
JPS62190828A (en) 1986-02-18 1987-08-21 松下電器産業株式会社 Manufacture of metallized film capacitor
IT1190350B (en) 1986-06-27 1988-02-16 Montedison Spa PROCESS FOR THE PREPARATION OF (2,2) -PARACYCLOPHANE AND ITS DERIVATIVES
IT1190647B (en) 1986-06-27 1988-02-16 Montedison Spa PROCESS FOR THE PREPARATION OF (2,2) -PARACYCLOPHANE AND ITS DERIVATIVES
IT1203876B (en) 1987-04-10 1989-02-23 Montedison Spa PROCESS FOR THE PREPARATION OF (2,2) -PARACYCLOPHANE AND ITS DERIVATIVES
US4849559A (en) 1987-05-15 1989-07-18 Union Carbide Corporation Process for the preparation of dichloro-[2,2]paracyclophane
US4806702A (en) 1987-05-26 1989-02-21 Union Carbide Corporation Process for the preparation of the parylene dimer
DE3720217A1 (en) 1987-06-17 1988-12-29 Metallgesellschaft Ag METHOD FOR PRODUCING ELECTRICALLY INSULATING COATINGS ON METAL SURFACES
US4769505A (en) 1987-07-17 1988-09-06 Union Carbide Corporation Process for the preparation of the parylene dimer
IT1222683B (en) 1987-09-18 1990-09-12 Montedison Spa TRICYCLE PREPARATION PROCESS 8.2.2.2. HEXADECA 4,6,10,12,13,15 ESAENE CHLORIDE IN BENZENIC NUCLEI
US4963429A (en) 1988-12-29 1990-10-16 Wea Manufacturing Inc. Thin oriented polymer films containing metal-organic compounds
JPH03284813A (en) 1990-03-14 1991-12-16 Fujikin Sofuto Kk Capacitor
US5110903A (en) 1990-12-20 1992-05-05 Union Carbide Chemicals & Plastics Technology Corporation Process for the preparation of mixed parylene dimers free of alpha-halogens
US5079674A (en) 1990-12-24 1992-01-07 Motorola, Inc. Supercapacitor electrode and method of fabrication thereof
US5305178A (en) 1991-08-12 1994-04-19 The United States Of America As Represented By The Secretary Of The Army Capacitor with increased electrical breakdown strength and method of forming the same
US5226291A (en) 1991-12-17 1993-07-13 General Motors Corporation Vacuum booster diaphragm/support plate retention method
JP3192194B2 (en) 1992-03-02 2001-07-23 松下電器産業株式会社 Capacitor
US5636100A (en) 1993-10-12 1997-06-03 The United States Of America As Represented By The Secretary Of The Army Capacitor having an enhanced dielectric breakdown strength
US5410504A (en) * 1994-05-03 1995-04-25 Ward; Calvin B. Memory based on arrays of capacitors
US5790368A (en) 1995-06-27 1998-08-04 Murata Manufacturing Co., Ltd. Capacitor and manufacturing method thereof
FR2742277B1 (en) 1995-12-07 1998-01-16 Sgs Thomson Microelectronics CUTTING POWER SUPPLY DEVICE
US5939766A (en) * 1996-07-24 1999-08-17 Advanced Micro Devices, Inc. High quality capacitor for sub-micrometer integrated circuits
US6096234A (en) 1997-01-23 2000-08-01 Shin-Etsu Chemical Co., Ltd. Cross-linked polymer solid electrolyte, method of manufacturing cross-linked solid polymer electrolyte, composite solid electrolyte, and thin solid cell employing composite solid electrolyte
IT1294280B1 (en) * 1997-07-25 1999-03-24 Sgs Thomson Microelectronics STRUCTURE OF CAPACITIVE MATRIX WITH CORRECT CAPACITIVE RATIO BETWEEN COMPONENT CAPACITORS, ESPECIALLY FOR CONVERTERS
NO309500B1 (en) 1997-08-15 2001-02-05 Thin Film Electronics Asa Ferroelectric data processing apparatus, methods for its preparation and readout, and use thereof
JPH11283874A (en) 1998-01-28 1999-10-15 Matsushita Electric Ind Co Ltd Electrolytic capacitor
US6215649B1 (en) 1998-11-05 2001-04-10 International Business Machines Corporation Printed circuit board capacitor structure and method
DE19902029A1 (en) * 1999-01-20 2000-07-27 Philips Corp Intellectual Pty Withstand voltage thin film capacitor with interdigital structure
KR100450885B1 (en) 1999-04-30 2004-10-01 쇼와 덴코 가부시키가이샤 Solid electrolytic capacitor and method for producing the same
JP2001086657A (en) 1999-09-10 2001-03-30 Casio Comput Co Ltd Charger and its charge and discharge method
US6602741B1 (en) 1999-09-14 2003-08-05 Matsushita Electric Industrial Co., Ltd. Conductive composition precursor, conductive composition, solid electrolytic capacitor, and their manufacturing method
US6469775B1 (en) * 2000-01-31 2002-10-22 Micron Technology, Inc. Reticle for creating resist-filled vias in a dual damascene process
US7385219B2 (en) 2000-02-11 2008-06-10 A{umlaut over (x)}on Technologies Corporation Optimized solid electrolyte for programmable metallization cell devices and structures
US6724611B1 (en) * 2000-03-29 2004-04-20 Intel Corporation Multi-layer chip capacitor
US6452776B1 (en) * 2000-04-06 2002-09-17 Intel Corporation Capacitor with defect isolation and bypass
US6341056B1 (en) 2000-05-17 2002-01-22 Lsi Logic Corporation Capacitor with multiple-component dielectric and method of fabricating same
JP2002353419A (en) * 2000-12-27 2002-12-06 Seiko Epson Corp Ferroelectric memory device
US7033406B2 (en) 2001-04-12 2006-04-25 Eestor, Inc. Electrical-energy-storage unit (EESU) utilizing ceramic and integrated-circuit technologies for replacement of electrochemical batteries
EP1251530A3 (en) 2001-04-16 2004-12-29 Shipley Company LLC Dielectric laminate for a capacitor
US6674635B1 (en) 2001-06-11 2004-01-06 Avx Corporation Protective coating for electrolytic capacitors
JP2003011270A (en) 2001-07-02 2003-01-15 Jsr Corp Dielectric layer with conductive foil, capacitor using the same and forming method thereof
TW519715B (en) * 2002-01-16 2003-02-01 Macronix Int Co Ltd Testing device and method of mask ROM
US20040210289A1 (en) 2002-03-04 2004-10-21 Xingwu Wang Novel nanomagnetic particles
US20030234415A1 (en) 2002-06-24 2003-12-25 Hwey-Ching Chien Scalable three-dimensional fringe capacitor with stacked via
JP4298246B2 (en) 2002-09-20 2009-07-15 日清紡ホールディングス株式会社 Nonaqueous electrolyte, electric double layer capacitor and nonaqueous electrolyte secondary battery
US7101813B2 (en) * 2002-12-04 2006-09-05 Micron Technology Inc. Atomic layer deposited Zr-Sn-Ti-O films
US7095072B2 (en) 2003-01-16 2006-08-22 Nec Electronics Corporation Semiconductor device with wiring layers forming a capacitor
US6819542B2 (en) * 2003-03-04 2004-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. Interdigitated capacitor structure for an integrated circuit
KR100693898B1 (en) 2003-03-31 2007-03-12 티디케이가부시기가이샤 Electrode step difference offsetting print paste and production method for electronic components
US6765778B1 (en) * 2003-04-04 2004-07-20 Freescale Semiconductor, Inc. Integrated vertical stack capacitor
US20050107870A1 (en) 2003-04-08 2005-05-19 Xingwu Wang Medical device with multiple coating layers
US7279777B2 (en) 2003-05-08 2007-10-09 3M Innovative Properties Company Organic polymers, laminates, and capacitors
US7164197B2 (en) 2003-06-19 2007-01-16 3M Innovative Properties Company Dielectric composite material
US7170260B2 (en) 2003-06-30 2007-01-30 Maxwell Technologies, Inc. Rapid charger for ultracapacitors
JP4047243B2 (en) 2003-08-07 2008-02-13 株式会社日立製作所 Organic / inorganic oxide mixed thin film, electronic substrate with built-in passive element using the same, and method for producing organic / inorganic oxide mixed thin film
US7274035B2 (en) 2003-09-03 2007-09-25 The Regents Of The University Of California Memory devices based on electric field programmable films
US6956417B2 (en) 2003-11-21 2005-10-18 International Business Machines Corporation Leakage compensation circuit
US8252487B2 (en) 2003-12-17 2012-08-28 Asml Netherlands B.V. Device manufacturing method and mask for use therein
US20060074164A1 (en) 2003-12-19 2006-04-06 Tpl, Inc. Structured composite dielectrics
US7117044B2 (en) 2003-12-30 2006-10-03 Square D Company Alternative energy system control method and apparatus
JP3991230B2 (en) 2004-02-12 2007-10-17 セイコーエプソン株式会社 Ferroelectric capacitor, method of forming the same, and ferroelectric memory
US7413815B2 (en) 2004-02-19 2008-08-19 Oak-Mitsui Inc. Thin laminate as embedded capacitance material in printed circuit boards
US20080171230A1 (en) 2004-02-27 2008-07-17 Qin Zou Thin Film Ferroelectric Composites, Method of Making and Capacitor Comprising the Same
DE102004031923A1 (en) 2004-06-23 2006-01-19 Hansgrohe Ag Sanitary hose made of flexible plastic with antibacterial finish
WO2006035984A2 (en) * 2004-09-27 2006-04-06 Matsushita Electric Industrial Co., Ltd. Multi-layer capacitor and molded capacitor
US7287415B2 (en) 2004-09-30 2007-10-30 Teledyne Licensing, Llc Microelectromechanical system (MEMS) viscosity sensor for fluid health monitoring
US7190016B2 (en) 2004-10-08 2007-03-13 Rohm And Haas Electronic Materials Llc Capacitor structure
DE102004052086A1 (en) * 2004-10-26 2006-04-27 Basf Ag High energy density capacitors
US7429317B2 (en) 2004-12-20 2008-09-30 Eksigent Technologies Llc Electrokinetic device employing a non-newtonian liquid
US7495887B2 (en) 2004-12-21 2009-02-24 E.I. Du Pont De Nemours And Company Capacitive devices, organic dielectric laminates, and printed wiring boards incorporating such devices, and methods of making thereof
KR20060072412A (en) * 2004-12-23 2006-06-28 동부일렉트로닉스 주식회사 Metal-to-metal capacitor having high lateral capacitance
US7197360B1 (en) 2005-01-12 2007-03-27 Pacesetter, Inc. Methods and systems for using an inductor to increase capacitor reformation efficiency in an implantable cardiac device (ICD)
US7342755B1 (en) 2005-01-26 2008-03-11 Horvat Branimir L High energy capacitor and charging procedures
KR100576882B1 (en) 2005-02-15 2006-05-10 삼성전기주식회사 Resin composition and polymer/ceramic complex for embedded capacitor having excellent tcc property
US8565003B2 (en) * 2011-06-28 2013-10-22 Unity Semiconductor Corporation Multilayer cross-point memory array having reduced disturb susceptibility
US7339225B2 (en) * 2005-05-20 2008-03-04 Faraday Technology Corp. Capacitor structure
US7471500B1 (en) * 2005-06-23 2008-12-30 Altera Corporation Multi-segment parallel wire capacitor
JP2007106875A (en) 2005-10-13 2007-04-26 Nitto Denko Corp (meth)acrylic polymer, its production method, polymeric solid electrolite and electro chemical element using the same
US7327011B2 (en) * 2005-11-02 2008-02-05 Lsi Logic Corporation Multi-surfaced plate-to-plate capacitor and method of forming same
US7869186B2 (en) * 2005-11-14 2011-01-11 Paratek Microwave, Inc. High Q and low stress capacitor electrode array
US9406444B2 (en) * 2005-11-14 2016-08-02 Blackberry Limited Thin film capacitors
US20070108490A1 (en) 2005-11-14 2007-05-17 General Electric Company Film capacitors with improved dielectric properties
US7989530B2 (en) 2005-11-23 2011-08-02 General Electric Company Nonlinear polymer composites and methods of making the same
US7465497B2 (en) 2005-11-23 2008-12-16 General Electric Company High dielectric constant nanocomposites, methods of manufacture thereof, and articles comprising the same
US7561407B1 (en) 2005-11-28 2009-07-14 Altera Corporation Multi-segment capacitor
KR100794521B1 (en) * 2005-12-17 2008-01-16 삼성전자주식회사 Capacitor array
US7446365B1 (en) * 2006-03-07 2008-11-04 Alvand Technologies, Inc. Fabricated layered capacitor for a digital-to-analog converter
JP4882457B2 (en) 2006-03-31 2012-02-22 富士通株式会社 Thin film capacitor and semiconductor device having the same
KR20090019870A (en) 2006-05-31 2009-02-25 막스-플랑크-게젤샤프트 츄어 푀르더룽 데어 비쎈샤프텐 에.파우. Porous electrically conductive carbon material and uses thereof
JP4486618B2 (en) 2006-06-06 2010-06-23 株式会社リコー Charging circuit, charging circuit operation control method, and power supply device
TWI299206B (en) 2006-06-16 2008-07-21 Realtek Semiconductor Corp X-shaped semiconductor capacitor structure
US8133792B2 (en) * 2006-07-04 2012-03-13 United Microelectronics Corp. Method for reducing capacitance variation between capacitors
US7990679B2 (en) 2006-07-14 2011-08-02 Dais Analytic Corporation Nanoparticle ultracapacitor
EP2050109B1 (en) 2006-07-28 2017-06-28 Illinois Tool Works Inc. Double layer capacitor using polymer electrolyte in multilayer construction
US8643087B2 (en) * 2006-09-20 2014-02-04 Micron Technology, Inc. Reduced leakage memory cells
JP4957728B2 (en) * 2006-10-16 2012-06-20 日本電気株式会社 Spiral capacitive element and manufacturing method thereof
US9468750B2 (en) * 2006-11-09 2016-10-18 Greatbatch Ltd. Multilayer planar spiral inductor filter for medical therapeutic or diagnostic applications
US7542265B2 (en) 2006-11-28 2009-06-02 General Electric Company High energy density capacitors and methods of manufacture
WO2008082045A1 (en) 2006-12-29 2008-07-10 University Of Seoul Foundation Of Industry-Academic Cooperation Memory device and method of manufacturing the same
WO2008084846A1 (en) 2007-01-12 2008-07-17 Daikin Industries, Ltd. Electric double layer capacitor
JP4611323B2 (en) 2007-01-26 2011-01-12 富士通株式会社 Variable capacitor
JP2008211060A (en) 2007-02-27 2008-09-11 Fujifilm Corp Method of manufacturing substrate having metal film
US20110110015A1 (en) 2007-04-11 2011-05-12 The Penn State Research Foundation Methods to improve the efficiency and reduce the energy losses in high energy density capacitor films and articles comprising the same
JP2008281685A (en) 2007-05-09 2008-11-20 Canon Inc Power supply device, its control method and image forming apparatus
US8207569B2 (en) 2007-06-06 2012-06-26 Qualcomm, Incorporated Intertwined finger capacitors
JP4357577B2 (en) 2007-06-14 2009-11-04 太陽誘電株式会社 Capacitor and manufacturing method thereof
US20090141423A1 (en) * 2007-07-12 2009-06-04 James Chyi Lai Parallel plate magnetic capacitor and electric energy storage device
JP5270124B2 (en) * 2007-09-03 2013-08-21 ローム株式会社 Capacitors and electronic components
JP5104872B2 (en) * 2007-10-03 2012-12-19 富士通セミコンダクター株式会社 Capacitor element and semiconductor device
US8633289B2 (en) 2011-08-31 2014-01-21 Carver Scientific, Inc. Formation of [2,2]paracyclophane and related compounds and methods for the formation of polymers from cyclophanes
US9011627B2 (en) 2007-10-05 2015-04-21 Carver Scientific, Inc. Method of manufacturing high permittivity low leakage capacitor and energy storing device
US8940850B2 (en) 2012-08-30 2015-01-27 Carver Scientific, Inc. Energy storage device
CN101889321A (en) 2007-10-05 2010-11-17 D·卡弗 High permittivity low leakage capacitor and energy storing device and method for forming the same
US8174923B2 (en) * 2007-11-08 2012-05-08 Rambus Inc. Voltage-stepped low-power memory device
US7781358B2 (en) 2008-02-15 2010-08-24 Trs Technologies, Inc. Antiferroelectric multilayer ceramic capacitor
US8525487B1 (en) 2008-03-05 2013-09-03 Marvell International Ltd. Circuit and method for regulating discharge of a capacitor
US8154242B2 (en) 2008-03-26 2012-04-10 GM Global Technology Operations LLC Method of fully charging an electrical energy storage device using a lower voltage fuel cell system
US8382042B2 (en) 2008-05-14 2013-02-26 Raytheon Company Structure with reconfigurable polymer material
JP5098826B2 (en) 2008-06-03 2012-12-12 住友電装株式会社 Grommet
US8247484B2 (en) 2008-06-12 2012-08-21 General Electric Company High temperature polymer composites and methods of making the same
US9390857B2 (en) 2008-09-30 2016-07-12 General Electric Company Film capacitor
US9214281B2 (en) 2008-10-03 2015-12-15 Carver Scientific, Inc. Very thin dielectrics for high permittivity and very low leakage capacitors and energy storing devices
US20120241085A1 (en) 2011-03-22 2012-09-27 David Carver Creation of very thin dielectrics for high permittivity and very low leakage capacitors and energy storing devices and methods for forming the same
US9214280B2 (en) 2008-10-03 2015-12-15 Carver Scientific, Inc. Very thin dielectrics for high permittivity and very low leakage capacitors and energy storing devices
US8207592B2 (en) * 2008-11-21 2012-06-26 Xilinx, Inc. Integrated capacitor with array of crosses
US20100178418A1 (en) * 2009-01-09 2010-07-15 Enis Tuncer Device fabrication method for high power density capacitors
JP5119176B2 (en) 2009-01-30 2013-01-16 東海ゴム工業株式会社 Dielectric material manufacturing method and dielectric film manufactured thereby
US8021954B2 (en) * 2009-05-22 2011-09-20 Globalfoundries Singapore Pte. Ltd. Integrated circuit system with hierarchical capacitor and method of manufacture thereof
ITMI20090917A1 (en) 2009-05-25 2010-11-26 Getters Spa MULTILAYER COMPOSITE GETTER
US20100302707A1 (en) 2009-05-26 2010-12-02 General Electric Company Composite structures for high energy-density capacitors and other devices
US8014124B2 (en) * 2009-06-03 2011-09-06 Mediatek Inc. Three-terminal metal-oxide-metal capacitor
WO2010147588A1 (en) 2009-06-18 2010-12-23 Hewlett-Packard Development Company, L.P. Memcapacitor
JP5117451B2 (en) 2009-06-30 2013-01-16 オンセミコンダクター・トレーディング・リミテッド Switched capacitor circuit and analog-digital converter
US9111689B2 (en) * 2009-07-02 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Vertical interdigitated semiconductor capacitor
JP2011029442A (en) 2009-07-27 2011-02-10 Daikin Industries Ltd Film for film capacitor, film capacitor using the same and method of manufacturing the film and the film capacitor
US8018768B2 (en) 2009-08-18 2011-09-13 United Microelectronics Corp. Non-volatile static random access memory (NVSRAM) device
CA2716022C (en) 2010-09-30 2019-03-12 Light-Based Technologies Incorporated Apparatus and methods for supplying power
US8810002B2 (en) 2009-11-10 2014-08-19 Taiwan Semiconductor Manufacturing Company, Ltd. Vertical metal insulator metal capacitor
US7982504B1 (en) * 2010-01-29 2011-07-19 Hewlett Packard Development Company, L.P. Interconnection architecture for multilayer circuits
JP2010153905A (en) 2010-03-05 2010-07-08 Renesas Technology Corp Semiconductor device
US8270209B2 (en) 2010-04-30 2012-09-18 Northrop Grumman Systems Corporation Josephson magnetic random access memory system and method
US8687403B1 (en) 2010-06-10 2014-04-01 Adesto Technologies Corporation Circuits having programmable impedance elements
US20120081833A1 (en) 2010-09-30 2012-04-05 General Electric Company Electronic devices containing polyetherimide components
US8971014B2 (en) 2010-10-18 2015-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Protection structure for metal-oxide-metal capacitor
KR101735715B1 (en) 2010-11-23 2017-05-15 삼성전자주식회사 Input sensing circuit and touch panel including the input sensing circuit
JP5665618B2 (en) * 2011-03-17 2015-02-04 太陽誘電株式会社 Capacitor configuration unit and capacitor
JP5734069B2 (en) 2011-04-13 2015-06-10 小島プレス工業株式会社 Film capacitor element, film capacitor, and method of manufacturing film capacitor element
JP5978509B2 (en) * 2011-07-25 2016-08-24 矢崎総業株式会社 High voltage conductive path and wire harness
US10227432B2 (en) 2011-08-31 2019-03-12 Carver Scientific, Inc. Formation of xylylene type copolymers, block polymers, and mixed composition materials
US8791444B2 (en) 2011-11-23 2014-07-29 National Chiao Tung University Resistive random access memory (RRAM) using stacked dielectrics and method for manufacturing the same
US8710854B2 (en) * 2011-11-29 2014-04-29 Eastman Kodak Company Making transparent capacitor with multi-layer grid
US8841030B2 (en) * 2012-01-24 2014-09-23 Enovix Corporation Microstructured electrode structures
US9087645B2 (en) 2012-01-30 2015-07-21 QuantrumScape Corporation Solid state energy storage devices
US8675336B2 (en) * 2012-01-31 2014-03-18 Electronics Concepts, Inc. Multiple concentric wound film capacitors
GB2501871B8 (en) 2012-05-03 2022-08-17 Dyson Technology Ltd Hybrid Capacitor
JP2013258363A (en) * 2012-06-14 2013-12-26 Taiyo Yuden Co Ltd Capacitor, structure, and method for manufacturing capacitor
US20140049872A1 (en) 2012-08-16 2014-02-20 Himax Technologies Limited Metal-oxide-metal capacitor able to reduce area of capacitor arrays
US9899846B2 (en) * 2012-08-30 2018-02-20 Carver Scientific, Inc. Entropic energy transfer methods and circuits
US10199165B2 (en) 2012-08-30 2019-02-05 Carver Scientific, Inc. Energy storage device
US8988923B2 (en) 2012-09-11 2015-03-24 The Regents Of The University Of California Nonvolatile magneto-electric random access memory circuit with burst writing and back-to-back reads
US9805869B2 (en) 2012-11-07 2017-10-31 Carver Scientific, Inc. High energy density electrostatic capacitor
CN104854669B (en) 2012-11-07 2018-05-18 卡弗科学有限公司 High-energy density electrostatic condenser
DE102012222704A1 (en) * 2012-12-11 2014-06-12 Epcos Ag Electric capacitor
US8836079B2 (en) * 2013-01-24 2014-09-16 Qualcomm Incorporated Metal-on-metal (MoM) capacitors having laterally displaced layers, and related systems and methods
US9570140B2 (en) * 2013-03-08 2017-02-14 The Regents Of The University Of California Circuit for mixed memory storage and polymorphic logic computing
AU2014240816B2 (en) 2013-03-29 2018-03-29 Carver Scientific, Inc. Energy storage device
US20140295101A1 (en) 2013-03-29 2014-10-02 Carver Scientific, Inc. High permittivity low leakage capacitor and energy storing device
MX355575B (en) 2013-04-05 2018-04-23 Carver Scient Inc Energy storage device.
FR3004854B1 (en) 2013-04-19 2015-04-17 Arkema France FERROELECTRIC MEMORY DEVICE
US20150019802A1 (en) 2013-07-11 2015-01-15 Qualcomm Incorporated Monolithic three dimensional (3d) random access memory (ram) array architecture with bitcell and logic partitioning
US9203022B2 (en) 2013-07-23 2015-12-01 Globalfoundries Inc. Resistive random access memory devices with extremely reactive contacts
CN103532554B (en) 2013-10-23 2016-04-27 中国电子科技集团公司第二十四研究所 capacitor array and layout design method thereof
US9418788B2 (en) 2014-03-16 2016-08-16 Apple Inc. Precision half cell for sub-FEMTO unit cap and capacitive DAC architecture in SAR ADC
TW201618140A (en) * 2014-05-12 2016-05-16 柯帕瑟特科學有限責任公司 Energy storage device and method of production thereof
SG11201703725YA (en) 2014-12-17 2017-07-28 Carver Scient Inc Entropic energy transfer methods and circuits
CN204623175U (en) * 2015-05-11 2015-09-09 常州优奇电子科技有限公司 Train super capacitor energy-storage equipment
EP3371811B1 (en) 2015-11-06 2022-11-23 Carver Scientific, Inc. Electroentropic memory device
SG10201912373QA (en) 2016-12-02 2020-02-27 Carver Scientific Inc Memory device and capacitive energy storage device

Also Published As

Publication number Publication date
CN115188591A (en) 2022-10-14
CN110431647B (en) 2022-06-28
SG10201912381YA (en) 2020-02-27
AU2017367692A1 (en) 2019-06-13
WO2018102598A8 (en) 2019-06-13
AU2022204616B2 (en) 2023-11-23
KR20190086768A (en) 2019-07-23
JP7031891B2 (en) 2022-03-08
US20190341196A1 (en) 2019-11-07
SG10201912363TA (en) 2020-02-27
EP3549232A1 (en) 2019-10-09
KR102519699B1 (en) 2023-04-07
MX2019006368A (en) 2019-08-21
US10984958B2 (en) 2021-04-20
JP7364266B2 (en) 2023-10-18
US10622159B2 (en) 2020-04-14
CN110431647A (en) 2019-11-08
JP2020501363A (en) 2020-01-16
US20190341193A1 (en) 2019-11-07
SG10201912358WA (en) 2020-02-27
US20190341195A1 (en) 2019-11-07
CA3044111A1 (en) 2018-06-07
US10903015B2 (en) 2021-01-26
WO2018102598A1 (en) 2018-06-07
AU2017367692B2 (en) 2022-04-14
JP2022070979A (en) 2022-05-13
US20190341194A1 (en) 2019-11-07
AU2022204616A1 (en) 2022-07-21
US10403440B2 (en) 2019-09-03
MX2023001417A (en) 2023-03-09
US20180158617A1 (en) 2018-06-07

Similar Documents

Publication Publication Date Title
SG10201912373QA (en) Memory device and capacitive energy storage device
PL3586387T3 (en) Prelithiated energy storage device
TWI560855B (en) Static random access memory cell and static random access memory array
IL267787A (en) Energy storage devices and systems
TWI561154B (en) Charge cabinet and storage device thereof
ZA201802616B (en) Supercapacitor based energy storage device
DK3712549T3 (en) ENERGY STORAGE DEVICE
IL251993A0 (en) Anti-fuse memory and semiconductor storage device
PL3347930T3 (en) Energy storage device
GB201704292D0 (en) Energy storage device
GB201719077D0 (en) Energy storage device
PL3249670T3 (en) Energy storage device
GB201704295D0 (en) Energy storage device
GB201712274D0 (en) Polymer-based energy storage device
GB201711550D0 (en) Energy storage device
GB201704294D0 (en) Energy storage device
GB201704293D0 (en) Energy storage device
IL251710B (en) Memory cell and non-volatile semiconductor storage device
PT3552292T (en) Energy storage apparatus and use thereof
GB2553016B (en) Storage device and storage element
SG10201707036SA (en) Storage and discharge device
GB201811883D0 (en) Energy storage device
GB201811882D0 (en) Energy storage device
GB201811886D0 (en) Energy storage device
IL255820A (en) Memory cell and non-volatile semiconductor storage device