SG11201601737SA - Semiconductor storage device and memory system - Google Patents
Semiconductor storage device and memory systemInfo
- Publication number
- SG11201601737SA SG11201601737SA SG11201601737SA SG11201601737SA SG11201601737SA SG 11201601737S A SG11201601737S A SG 11201601737SA SG 11201601737S A SG11201601737S A SG 11201601737SA SG 11201601737S A SG11201601737S A SG 11201601737SA SG 11201601737S A SG11201601737S A SG 11201601737SA
- Authority
- SG
- Singapore
- Prior art keywords
- storage device
- memory system
- semiconductor storage
- semiconductor
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2013/074579 WO2015037088A1 (en) | 2013-09-11 | 2013-09-11 | Semiconductor storage device and memory system |
| PCT/JP2014/072061 WO2015037416A1 (en) | 2013-09-11 | 2014-08-22 | Semiconductor storage device and memory system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201601737SA true SG11201601737SA (en) | 2016-04-28 |
Family
ID=52665230
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201601737SA SG11201601737SA (en) | 2013-09-11 | 2014-08-22 | Semiconductor storage device and memory system |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9570173B2 (en) |
| EP (1) | EP3046109B1 (en) |
| JP (1) | JP6118415B2 (en) |
| CN (1) | CN105518798B (en) |
| SG (1) | SG11201601737SA (en) |
| TW (2) | TWI527052B (en) |
| WO (2) | WO2015037088A1 (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016170837A (en) | 2015-03-12 | 2016-09-23 | 株式会社東芝 | Semiconductor storage |
| JP6659478B2 (en) * | 2016-06-17 | 2020-03-04 | キオクシア株式会社 | Semiconductor storage device |
| JP6659494B2 (en) | 2016-08-19 | 2020-03-04 | キオクシア株式会社 | Semiconductor storage device and memory system |
| US10127988B2 (en) * | 2016-08-26 | 2018-11-13 | Micron Technology, Inc. | Temperature compensation in memory sensing |
| CN107958688B (en) * | 2016-10-17 | 2020-04-17 | 旺宏电子股份有限公司 | Sensing circuit and method for nonvolatile memory device |
| US9881677B1 (en) | 2017-04-26 | 2018-01-30 | Macronix International Co., Ltd. | Sense amplifier and method for bit line voltage compensation thereof |
| US10366739B2 (en) | 2017-06-20 | 2019-07-30 | Sandisk Technologies Llc | State dependent sense circuits and sense operations for storage devices |
| US10510383B2 (en) | 2017-10-03 | 2019-12-17 | Sandisk Technologies Llc | State dependent sense circuits and pre-charge operations for storage devices |
| KR20190073102A (en) * | 2017-12-18 | 2019-06-26 | 삼성전자주식회사 | Bit line sense amplifier, semiconductor memory device and multi bit data sensing method thereof |
| US10714166B2 (en) * | 2018-08-13 | 2020-07-14 | Micron Technology, Inc. | Apparatus and methods for decoding memory access addresses for access operations |
| JP2020047314A (en) | 2018-09-14 | 2020-03-26 | キオクシア株式会社 | Semiconductor storage device |
| JP2020047347A (en) | 2018-09-19 | 2020-03-26 | キオクシア株式会社 | Semiconductor storage device |
| JP2020102291A (en) * | 2018-12-25 | 2020-07-02 | キオクシア株式会社 | Semiconductor device |
| JP2021034090A (en) | 2019-08-28 | 2021-03-01 | キオクシア株式会社 | Nonvolatile semiconductor memory device |
| US20230238056A1 (en) * | 2022-01-27 | 2023-07-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory device and method of manufacturing the same |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4874637B2 (en) * | 2005-11-30 | 2012-02-15 | ラピスセミコンダクタ株式会社 | Nonvolatile memory device and reading method thereof |
| US7522454B2 (en) * | 2006-07-20 | 2009-04-21 | Sandisk Corporation | Compensating for coupling based on sensing a neighbor using coupling |
| US8295112B2 (en) * | 2009-03-31 | 2012-10-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sense amplifiers and exemplary applications |
| US8169830B2 (en) * | 2009-09-17 | 2012-05-01 | Micron Technology, Inc. | Sensing for all bit line architecture in a memory device |
| JP2011159355A (en) * | 2010-02-01 | 2011-08-18 | Sanyo Electric Co Ltd | Semiconductor memory device |
| JP2011181157A (en) * | 2010-03-03 | 2011-09-15 | Toshiba Corp | Nonvolatile semiconductor memory device |
| JP2011210348A (en) * | 2010-03-11 | 2011-10-20 | Sony Corp | Control voltage generation circuit and nonvolatile storage device having the same |
| JP2011198984A (en) * | 2010-03-19 | 2011-10-06 | Toshiba Corp | Semiconductor memory device |
| JP2011258289A (en) * | 2010-06-10 | 2011-12-22 | Toshiba Corp | Method for detecting threshold value of memory cell |
| US8441853B2 (en) * | 2010-09-30 | 2013-05-14 | Sandisk Technologies Inc. | Sensing for NAND memory based on word line position |
| KR101868332B1 (en) * | 2010-11-25 | 2018-06-20 | 삼성전자주식회사 | Flash memory device and data storage device including the same |
| JP2013012267A (en) * | 2011-06-29 | 2013-01-17 | Toshiba Corp | Nonvolatile semiconductor memory device |
| JP2013069356A (en) | 2011-09-20 | 2013-04-18 | Toshiba Corp | Semiconductor storage device |
| US8582381B2 (en) * | 2012-02-23 | 2013-11-12 | SanDisk Technologies, Inc. | Temperature based compensation during verify operations for non-volatile storage |
| JP2013232258A (en) | 2012-04-27 | 2013-11-14 | Toshiba Corp | Semiconductor memory device |
| JP2014010875A (en) | 2012-07-02 | 2014-01-20 | Toshiba Corp | Semiconductor memory device |
-
2013
- 2013-09-11 WO PCT/JP2013/074579 patent/WO2015037088A1/en active Application Filing
-
2014
- 2014-08-22 WO PCT/JP2014/072061 patent/WO2015037416A1/en active Application Filing
- 2014-08-22 JP JP2015536510A patent/JP6118415B2/en active Active
- 2014-08-22 EP EP14844547.1A patent/EP3046109B1/en active Active
- 2014-08-22 CN CN201480049489.XA patent/CN105518798B/en active Active
- 2014-08-22 SG SG11201601737SA patent/SG11201601737SA/en unknown
- 2014-09-03 TW TW103130459A patent/TWI527052B/en active
- 2014-09-03 TW TW104144356A patent/TWI595493B/en active
-
2016
- 2016-03-07 US US15/062,683 patent/US9570173B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP3046109A1 (en) | 2016-07-20 |
| US9570173B2 (en) | 2017-02-14 |
| WO2015037416A1 (en) | 2015-03-19 |
| JPWO2015037416A1 (en) | 2017-03-02 |
| JP6118415B2 (en) | 2017-04-19 |
| EP3046109B1 (en) | 2020-10-28 |
| TW201519250A (en) | 2015-05-16 |
| CN105518798B (en) | 2019-10-01 |
| TWI527052B (en) | 2016-03-21 |
| WO2015037088A1 (en) | 2015-03-19 |
| TWI595493B (en) | 2017-08-11 |
| TW201643884A (en) | 2016-12-16 |
| CN105518798A (en) | 2016-04-20 |
| US20160189777A1 (en) | 2016-06-30 |
| EP3046109A4 (en) | 2017-04-19 |
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