SG11201600931UA - Semiconductor memory device and stored data read method - Google Patents

Semiconductor memory device and stored data read method

Info

Publication number
SG11201600931UA
SG11201600931UA SG11201600931UA SG11201600931UA SG11201600931UA SG 11201600931U A SG11201600931U A SG 11201600931UA SG 11201600931U A SG11201600931U A SG 11201600931UA SG 11201600931U A SG11201600931U A SG 11201600931UA SG 11201600931U A SG11201600931U A SG 11201600931UA
Authority
SG
Singapore
Prior art keywords
memory device
semiconductor memory
data read
stored data
read method
Prior art date
Application number
SG11201600931UA
Inventor
Sibo Ma
Masahiro Yoshihara
Katsumi Abe
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of SG11201600931UA publication Critical patent/SG11201600931UA/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
SG11201600931UA 2013-07-08 2013-07-08 Semiconductor memory device and stored data read method SG11201600931UA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2013/068604 WO2015004708A1 (en) 2013-07-08 2013-07-08 Semiconductor storage device, and method for reading stored data

Publications (1)

Publication Number Publication Date
SG11201600931UA true SG11201600931UA (en) 2016-03-30

Family

ID=52279440

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201600931UA SG11201600931UA (en) 2013-07-08 2013-07-08 Semiconductor memory device and stored data read method

Country Status (5)

Country Link
US (1) US9666295B2 (en)
JP (1) JP6039805B2 (en)
CN (1) CN105518792B (en)
SG (1) SG11201600931UA (en)
WO (1) WO2015004708A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10156593B2 (en) * 2016-06-21 2018-12-18 Texas Instruments Incorporated Method and circuitry for measuring current
US10366739B2 (en) 2017-06-20 2019-07-30 Sandisk Technologies Llc State dependent sense circuits and sense operations for storage devices
US10510383B2 (en) 2017-10-03 2019-12-17 Sandisk Technologies Llc State dependent sense circuits and pre-charge operations for storage devices
US10304550B1 (en) * 2017-11-29 2019-05-28 Sandisk Technologies Llc Sense amplifier with negative threshold sensing for non-volatile memory
JP2020102293A (en) 2018-12-25 2020-07-02 キオクシア株式会社 Semiconductor storage device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2859813B1 (en) * 2003-09-15 2005-12-23 Atmel Corp EEPROM ARCHITECTURE AND PROGRAMMING PROTOCOL
JP4271168B2 (en) 2004-08-13 2009-06-03 株式会社東芝 Semiconductor memory device
US7561472B2 (en) * 2006-09-11 2009-07-14 Micron Technology, Inc. NAND architecture memory with voltage sensing
JP2008084485A (en) * 2006-09-28 2008-04-10 Toshiba Corp Nonvolatile semiconductor storage device and data readout method
JP2009043358A (en) * 2007-08-10 2009-02-26 Toshiba Corp Semiconductor memory device
JP2009043357A (en) 2007-08-10 2009-02-26 Toshiba Corp Semiconductor memory device
JP4635068B2 (en) 2008-03-25 2011-02-16 株式会社東芝 Semiconductor memory device
US7974133B2 (en) 2009-01-06 2011-07-05 Sandisk Technologies Inc. Robust sensing circuit and method
JP5002632B2 (en) 2009-09-25 2012-08-15 株式会社東芝 Nonvolatile semiconductor memory device
JP2011146100A (en) * 2010-01-15 2011-07-28 Toshiba Corp Semiconductor memory device and reading method of the same
JP2011258289A (en) * 2010-06-10 2011-12-22 Toshiba Corp Method for detecting threshold value of memory cell
US8274828B2 (en) * 2010-12-15 2012-09-25 Fs Semiconductor Corp., Ltd. Structures and methods for reading out non-volatile memory using referencing cells
JP2013012267A (en) * 2011-06-29 2013-01-17 Toshiba Corp Nonvolatile semiconductor memory device
JP2013125569A (en) * 2011-12-15 2013-06-24 Toshiba Corp Nonvolatile semiconductor storage device
US8917557B2 (en) 2011-12-15 2014-12-23 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device

Also Published As

Publication number Publication date
JP6039805B2 (en) 2016-12-07
US9666295B2 (en) 2017-05-30
WO2015004708A1 (en) 2015-01-15
CN105518792B (en) 2019-07-30
US20160189790A1 (en) 2016-06-30
JPWO2015004708A1 (en) 2017-02-23
CN105518792A (en) 2016-04-20

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