SG11201706676SA - A method for processing silicon material - Google Patents

A method for processing silicon material

Info

Publication number
SG11201706676SA
SG11201706676SA SG11201706676SA SG11201706676SA SG11201706676SA SG 11201706676S A SG11201706676S A SG 11201706676SA SG 11201706676S A SG11201706676S A SG 11201706676SA SG 11201706676S A SG11201706676S A SG 11201706676SA SG 11201706676S A SG11201706676S A SG 11201706676SA
Authority
SG
Singapore
Prior art keywords
silicon material
processing silicon
processing
silicon
Prior art date
Application number
SG11201706676SA
Other languages
English (en)
Inventor
Brett Jason Hallam
Stuart Ross Wenham
Malcolm David Abbott
Phillip George Hamer
Original Assignee
Newsouth Innovations Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from AU2015900915A external-priority patent/AU2015900915A0/en
Application filed by Newsouth Innovations Pty Ltd filed Critical Newsouth Innovations Pty Ltd
Publication of SG11201706676SA publication Critical patent/SG11201706676SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG11201706676SA 2015-03-13 2016-03-11 A method for processing silicon material SG11201706676SA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
AU2015900915A AU2015900915A0 (en) 2015-03-13 A method for processing silicon material
AU2015903283A AU2015903283A0 (en) 2015-08-14 A method for processing silicon material
PCT/AU2016/050174 WO2016145482A1 (en) 2015-03-13 2016-03-11 A method for processing silicon material

Publications (1)

Publication Number Publication Date
SG11201706676SA true SG11201706676SA (en) 2017-09-28

Family

ID=56918173

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201706676SA SG11201706676SA (en) 2015-03-13 2016-03-11 A method for processing silicon material
SG10201908439W SG10201908439WA (en) 2015-03-13 2016-03-11 A method for processing silicon material

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201908439W SG10201908439WA (en) 2015-03-13 2016-03-11 A method for processing silicon material

Country Status (8)

Country Link
US (1) US10505069B2 (ko)
EP (1) EP3268982A4 (ko)
KR (1) KR102571109B1 (ko)
CN (1) CN107408497B (ko)
AU (1) AU2016232981A1 (ko)
SG (2) SG11201706676SA (ko)
TW (1) TW201705229A (ko)
WO (1) WO2016145482A1 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201830722A (zh) 2016-11-22 2018-08-16 澳大利亞商新南創新私人有限公司 改善光伏裝置之晶圓性能之方法
US20190249923A1 (en) * 2018-02-15 2019-08-15 Illinois Tool Works Inc. Methods and apparatus to provide closed loop control in a solar cell production system
CN111489980A (zh) * 2019-10-22 2020-08-04 国家电投集团西安太阳能电力有限公司 一种太阳能电池缺陷的灵敏检测方法
CN112768372A (zh) * 2019-11-05 2021-05-07 伊利诺斯工具制品有限公司 烧结设备
CN111146308B (zh) * 2019-12-16 2022-09-30 浙江爱旭太阳能科技有限公司 一种用于降低perc双面电池效率衰减的光源再生炉及方法
CN111276572B (zh) * 2020-02-17 2023-08-22 浙江晶科能源有限公司 一种同心圆单晶硅电池处理方法
US11870002B2 (en) * 2020-05-13 2024-01-09 First Solar, Inc. Methods and systems for use with photovoltaic devices
FR3136891A1 (fr) * 2022-06-20 2023-12-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé d’amélioration du rendement de conversion d’une cellule photovoltaïque et équipement associé
FR3136892A1 (fr) * 2022-06-20 2023-12-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de traitement d’un module photovoltaïque par immersion de lumière

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006012920B3 (de) 2006-03-21 2008-01-24 Universität Konstanz Verfahren zum Herstellen eines Photovoltaikelements mit stabilisiertem Wirkungsgrad
DE102006019836B4 (de) * 2006-04-28 2016-09-01 Globalfoundries Inc. Verfahren zum Reduzieren von Siliziddefekten durch Entfernen von Kontaminationsstoffen vor der Drain/Source-Aktivierung
US7297376B1 (en) * 2006-07-07 2007-11-20 Applied Materials, Inc. Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers
JP2013033828A (ja) * 2011-08-01 2013-02-14 Tokyo Electron Ltd 成膜方法
JP2013163597A (ja) * 2012-01-10 2013-08-22 Globalwafers Japan Co Ltd シリコンウェーハの製造方法
FR2995727B1 (fr) 2012-09-14 2014-10-24 Commissariat Energie Atomique Dispositif et procede de restauration de cellules photovoltaiques a base de silicium
JP6266768B2 (ja) 2013-06-26 2018-01-24 ユニバシテート コンスタンツ 効率が安定した光起電力素子の製造方法および製造装置
US20160005915A1 (en) 2014-07-03 2016-01-07 Sino-American Silicon Products Inc. Method and apparatus for inhibiting light-induced degradation of photovoltaic device

Also Published As

Publication number Publication date
KR102571109B1 (ko) 2023-08-25
CN107408497B (zh) 2021-05-18
EP3268982A4 (en) 2019-04-24
US20180040760A1 (en) 2018-02-08
TW201705229A (zh) 2017-02-01
KR20170128360A (ko) 2017-11-22
SG10201908439WA (en) 2019-10-30
AU2016232981A1 (en) 2017-08-31
EP3268982A1 (en) 2018-01-17
US10505069B2 (en) 2019-12-10
CN107408497A (zh) 2017-11-28
WO2016145482A1 (en) 2016-09-22

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