SG11201701937RA - Silicon containing block copolymers for direct self-assembly application - Google Patents

Silicon containing block copolymers for direct self-assembly application

Info

Publication number
SG11201701937RA
SG11201701937RA SG11201701937RA SG11201701937RA SG11201701937RA SG 11201701937R A SG11201701937R A SG 11201701937RA SG 11201701937R A SG11201701937R A SG 11201701937RA SG 11201701937R A SG11201701937R A SG 11201701937RA SG 11201701937R A SG11201701937R A SG 11201701937RA
Authority
SG
Singapore
Prior art keywords
block copolymers
silicon containing
containing block
assembly application
direct self
Prior art date
Application number
SG11201701937RA
Other languages
English (en)
Inventor
Hengpeng Wu
Jian Yin
Guanyang Lin
Jihoon Kim
Margareta Paunescu
Original Assignee
Az Electronic Materials Luxembourg S À R L
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Luxembourg S À R L filed Critical Az Electronic Materials Luxembourg S À R L
Publication of SG11201701937RA publication Critical patent/SG11201701937RA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/42—Introducing metal atoms or metal-containing groups
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B05D3/0209—Multistage baking
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/14—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
    • B05D3/141—Plasma treatment
    • B05D3/145—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F293/00—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
    • C08F293/005—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule using free radical "living" or "controlled" polymerisation, e.g. using a complexing agent
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F297/00—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer
    • C08F297/02—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer using a catalyst of the anionic type
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F299/00—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
    • C08F299/02—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
    • C08F299/022—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polycondensates with side or terminal unsaturations
    • C08F299/024—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polycondensates with side or terminal unsaturations the unsaturation being in acrylic or methacrylic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F299/00—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
    • C08F299/02—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
    • C08F299/04—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polyesters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L53/00—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • C08L53/005—Modified block copolymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D153/00—Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Graft Or Block Polymers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG11201701937RA 2014-10-30 2015-10-28 Silicon containing block copolymers for direct self-assembly application SG11201701937RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/527,939 US9505945B2 (en) 2014-10-30 2014-10-30 Silicon containing block copolymers for direct self-assembly application
PCT/EP2015/074980 WO2016066684A1 (en) 2014-10-30 2015-10-28 Silicon containing block copolymers for direct self-assembly application

Publications (1)

Publication Number Publication Date
SG11201701937RA true SG11201701937RA (en) 2017-04-27

Family

ID=54541022

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201701937RA SG11201701937RA (en) 2014-10-30 2015-10-28 Silicon containing block copolymers for direct self-assembly application

Country Status (9)

Country Link
US (1) US9505945B2 (https=)
EP (1) EP3212714B1 (https=)
JP (2) JP6782695B2 (https=)
KR (1) KR102226229B1 (https=)
CN (1) CN107075057B (https=)
IL (1) IL250995A0 (https=)
SG (1) SG11201701937RA (https=)
TW (1) TWI677526B (https=)
WO (1) WO2016066684A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9738765B2 (en) * 2015-02-19 2017-08-22 International Business Machines Corporation Hybrid topographical and chemical pre-patterns for directed self-assembly of block copolymers
JP6819950B2 (ja) * 2016-11-30 2021-01-27 エルジー・ケム・リミテッド ブロック共重合体
KR102096272B1 (ko) * 2016-11-30 2020-04-02 주식회사 엘지화학 블록 공중합체
EP3858872B1 (en) 2016-12-21 2022-05-11 Merck Patent GmbH Compositions and processes for self-assembly of block copolymers
JP7076701B2 (ja) * 2018-03-05 2022-05-30 東京応化工業株式会社 ブロック共重合体及びその製造方法、ならびに相分離構造を含む構造体の製造方法
FR3089982A1 (fr) * 2018-12-12 2020-06-19 Arkema France Procédé de fabrication d’un copolymère à blocs contenant du silicium
WO2022243216A1 (en) 2021-05-18 2022-11-24 Merck Patent Gmbh Hydrophobic crosslinkable pinning underlayers with improved dry etch capabilities for patterning directed self-assembly of ps-b-pmma type block copolymers

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WO1988009527A2 (en) * 1987-05-21 1988-12-01 Hughes Aircraft Company Silicon-containing negative resist material, and process for its use in patterning substrates
US5985524A (en) * 1997-03-28 1999-11-16 International Business Machines Incorporated Process for using bilayer photoresist
US6210856B1 (en) * 1999-01-27 2001-04-03 International Business Machines Corporation Resist composition and process of forming a patterned resist layer on a substrate
JP3963623B2 (ja) * 1999-12-09 2007-08-22 富士フイルム株式会社 ポジ型フォトレジスト組成物
TW583187B (en) * 2000-01-06 2004-04-11 Shinetsu Chemical Co Preparation of tris(trimethylsilyl) silylethyl esters
JP3858968B2 (ja) * 2000-01-06 2006-12-20 信越化学工業株式会社 トリス（トリメチルシリル）シリルエチルエステルの製造方法
US6444408B1 (en) * 2000-02-28 2002-09-03 International Business Machines Corporation High silicon content monomers and polymers suitable for 193 nm bilayer resists
JP3781960B2 (ja) 2000-09-29 2006-06-07 信越化学工業株式会社 反射防止膜材料およびパターン形成方法
JP3912512B2 (ja) 2002-07-02 2007-05-09 信越化学工業株式会社 珪素含有高分子化合物、レジスト材料及びパターン形成方法
JP4040392B2 (ja) 2002-08-22 2008-01-30 富士フイルム株式会社 ポジ型フォトレジスト組成物
US8696918B2 (en) 2010-05-05 2014-04-15 Micron Technology, Inc. Methods of utilizing block copolymer to form patterns
US8691925B2 (en) * 2011-09-23 2014-04-08 Az Electronic Materials (Luxembourg) S.A.R.L. Compositions of neutral layer for directed self assembly block copolymers and processes thereof
US8961918B2 (en) 2012-02-10 2015-02-24 Rohm And Haas Electronic Materials Llc Thermal annealing process
US8697810B2 (en) * 2012-02-10 2014-04-15 Rohm And Haas Electronic Materials Llc Block copolymer and methods relating thereto
US8710150B2 (en) 2012-02-10 2014-04-29 Rohm And Haas Electronic Materials Llc Blended block copolymer composition
JP5745439B2 (ja) * 2012-02-17 2015-07-08 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、並びに、これを用いたパターン形成方法、レジスト膜及び電子デバイスの製造方法
EP2832807A4 (en) * 2012-03-27 2015-10-21 Nissan Chemical Ind Ltd SINGLE-LAYER-FORMING COMPOSITION FOR SELF-BUILDING FILMS
KR20150036130A (ko) * 2012-06-29 2015-04-07 제이에스알 가부시끼가이샤 패턴 형성용 조성물 및 패턴 형성 방법
US8822619B1 (en) * 2013-02-08 2014-09-02 Rohm And Haas Electronic Materials Llc Directed self assembly copolymer composition and related methods
JP5956370B2 (ja) * 2013-03-12 2016-07-27 信越化学工業株式会社 珪素含有下層膜材料及びパターン形成方法

Also Published As

Publication number Publication date
KR20170081206A (ko) 2017-07-11
US20160122579A1 (en) 2016-05-05
TWI677526B (zh) 2019-11-21
JP2020033566A (ja) 2020-03-05
KR102226229B1 (ko) 2021-03-10
IL250995A0 (en) 2017-04-30
JP2018502936A (ja) 2018-02-01
WO2016066684A1 (en) 2016-05-06
JP6810782B2 (ja) 2021-01-06
EP3212714A1 (en) 2017-09-06
JP6782695B2 (ja) 2020-11-11
US9505945B2 (en) 2016-11-29
CN107075057A (zh) 2017-08-18
TW201619278A (zh) 2016-06-01
CN107075057B (zh) 2019-02-15
EP3212714B1 (en) 2019-03-06

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