SG11201700887WA - Chemical-mechanical polishing composition comprising organic/inorganic composite particles - Google Patents
Chemical-mechanical polishing composition comprising organic/inorganic composite particlesInfo
- Publication number
- SG11201700887WA SG11201700887WA SG11201700887WA SG11201700887WA SG11201700887WA SG 11201700887W A SG11201700887W A SG 11201700887WA SG 11201700887W A SG11201700887W A SG 11201700887WA SG 11201700887W A SG11201700887W A SG 11201700887WA SG 11201700887W A SG11201700887W A SG 11201700887WA
- Authority
- SG
- Singapore
- Prior art keywords
- organic
- chemical
- mechanical polishing
- composite particles
- polishing composition
- Prior art date
Links
- 239000011246 composite particle Substances 0.000 title 1
- 239000000203 mixture Substances 0.000 title 1
- 238000005498 polishing Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462035533P | 2014-08-11 | 2014-08-11 | |
| PCT/IB2015/055608 WO2016024177A1 (en) | 2014-08-11 | 2015-07-24 | Chemical-mechanical polishing composition comprising organic/inorganic composite particles |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201700887WA true SG11201700887WA (en) | 2017-03-30 |
Family
ID=55303915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201700887WA SG11201700887WA (en) | 2014-08-11 | 2015-07-24 | Chemical-mechanical polishing composition comprising organic/inorganic composite particles |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10214663B2 (zh) |
| EP (1) | EP3180406A4 (zh) |
| JP (1) | JP6804435B2 (zh) |
| KR (1) | KR102485534B1 (zh) |
| CN (1) | CN106795420A (zh) |
| SG (1) | SG11201700887WA (zh) |
| TW (1) | TWI675098B (zh) |
| WO (1) | WO2016024177A1 (zh) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10128146B2 (en) * | 2015-08-20 | 2018-11-13 | Globalwafers Co., Ltd. | Semiconductor substrate polishing methods and slurries and methods for manufacturing silicon on insulator structures |
| US11339309B2 (en) * | 2016-12-22 | 2022-05-24 | Mitsui Mining & Smelting Co., Ltd. | Polishing liquid and polishing method |
| FR3062122B1 (fr) * | 2017-01-25 | 2019-04-19 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Particules inorganiques conductrices de protons fluorees et utilisation de ces particules dans des membranes conductrices de protons |
| FR3062075B1 (fr) * | 2017-01-25 | 2021-09-10 | Commissariat Energie Atomique | Particules inorganiques conductrices de protons, procede de preparation de celles-ci et utilisation de celles-ci pour constituer une membrane de pile a combustible |
| KR102343435B1 (ko) * | 2018-08-08 | 2021-12-24 | 삼성에스디아이 주식회사 | 구리 막 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 구리 막 연마 방법 |
| CN110577823B (zh) * | 2018-08-20 | 2021-10-12 | 蓝思科技（长沙）有限公司 | 纳米磨料、抛光液及制备方法和应用 |
| TWI745704B (zh) * | 2019-06-21 | 2021-11-11 | 國立陽明交通大學 | 氧化鎳晶片、其製備方法及用途 |
| CN113549424B (zh) * | 2021-08-04 | 2022-05-13 | 白鸽磨料磨具有限公司 | 一种抛光用氧化铈团簇粉及其制备方法 |
| CN114456716B (zh) * | 2022-01-14 | 2022-10-25 | 华东理工大学 | 一种抛光蓝宝石用氧化铝抛光液及其制备方法 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4075247B2 (ja) | 1999-09-30 | 2008-04-16 | Ｊｓｒ株式会社 | 化学機械研磨用水系分散体 |
| DE60131080T2 (de) * | 2000-05-31 | 2008-07-31 | Jsr Corp. | Schleifmaterial |
| EP1211024A3 (en) * | 2000-11-30 | 2004-01-02 | JSR Corporation | Polishing method |
| JP4187497B2 (ja) | 2002-01-25 | 2008-11-26 | Ｊｓｒ株式会社 | 半導体基板の化学機械研磨方法 |
| US20040162011A1 (en) | 2002-08-02 | 2004-08-19 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing and production process of semiconductor device |
| US20040175942A1 (en) | 2003-01-03 | 2004-09-09 | Chang Song Y. | Composition and method used for chemical mechanical planarization of metals |
| US6939211B2 (en) * | 2003-10-09 | 2005-09-06 | Micron Technology, Inc. | Planarizing solutions including abrasive elements, and methods for manufacturing and using such planarizing solutions |
| US20060205219A1 (en) * | 2005-03-08 | 2006-09-14 | Baker Arthur R Iii | Compositions and methods for chemical mechanical polishing interlevel dielectric layers |
| TW200714697A (en) | 2005-08-24 | 2007-04-16 | Jsr Corp | Aqueous dispersion for chemical mechanical polish, kit for formulating the aqueous dispersion, chemical mechanical polishing method and method for producing semiconductor device |
| WO2008082177A1 (en) * | 2006-12-29 | 2008-07-10 | Lg Chem, Ltd. | Cmp slurry composition for forming metal wiring line |
| JP2008288509A (ja) * | 2007-05-21 | 2008-11-27 | Fujifilm Corp | 金属用研磨液 |
| JP5327427B2 (ja) | 2007-06-19 | 2013-10-30 | Ｊｓｒ株式会社 | 化学機械研磨用水系分散体調製用セット、化学機械研磨用水系分散体の調製方法、化学機械研磨用水系分散体および化学機械研磨方法 |
| US9202709B2 (en) * | 2008-03-19 | 2015-12-01 | Fujifilm Corporation | Polishing liquid for metal and polishing method using the same |
| CN102113096A (zh) * | 2008-08-06 | 2011-06-29 | 日立化成工业株式会社 | 化学机械研磨用研磨液以及使用了该研磨液的基板的研磨方法 |
| TW201038690A (en) | 2008-09-26 | 2010-11-01 | Rhodia Operations | Abrasive compositions for chemical mechanical polishing and methods for using same |
| CN102395605B (zh) * | 2009-04-15 | 2013-11-06 | 巴斯夫欧洲公司 | 制备水性复合颗粒分散体的方法 |
| EP2427523B1 (en) * | 2009-05-06 | 2015-10-28 | Basf Se | An aqueous metal polishing agent comprising a polymeric abrasive containing pendant functional groups and its use in a cmp process |
| CN107083233A (zh) * | 2010-02-24 | 2017-08-22 | 巴斯夫欧洲公司 | 研磨制品，其制备方法及其应用方法 |
| CN101870851B (zh) * | 2010-06-02 | 2013-01-30 | 浙江工业大学 | 化学机械抛光液和抛光方法 |
| CN108276915A (zh) * | 2010-12-10 | 2018-07-13 | 巴斯夫欧洲公司 | 用于化学机械抛光包含氧化硅电介质和多晶硅膜的基底的含水抛光组合物和方法 |
| US20130186850A1 (en) * | 2012-01-24 | 2013-07-25 | Applied Materials, Inc. | Slurry for cobalt applications |
| US9982166B2 (en) | 2013-12-20 | 2018-05-29 | Cabot Corporation | Metal oxide-polymer composite particles for chemical mechanical planarization |
-
2015
- 2015-07-24 EP EP15831838.6A patent/EP3180406A4/en active Pending
- 2015-07-24 JP JP2017507975A patent/JP6804435B2/ja active Active
- 2015-07-24 CN CN201580043020.XA patent/CN106795420A/zh active Pending
- 2015-07-24 US US15/502,932 patent/US10214663B2/en active Active
- 2015-07-24 KR KR1020177006820A patent/KR102485534B1/ko active IP Right Grant
- 2015-07-24 SG SG11201700887WA patent/SG11201700887WA/en unknown
- 2015-07-24 WO PCT/IB2015/055608 patent/WO2016024177A1/en active Application Filing
- 2015-08-06 TW TW104125557A patent/TWI675098B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201610128A (zh) | 2016-03-16 |
| WO2016024177A1 (en) | 2016-02-18 |
| EP3180406A4 (en) | 2018-04-11 |
| CN106795420A (zh) | 2017-05-31 |
| KR20170041888A (ko) | 2017-04-17 |
| JP6804435B2 (ja) | 2020-12-23 |
| KR102485534B1 (ko) | 2023-01-06 |
| US20170226381A1 (en) | 2017-08-10 |
| EP3180406A1 (en) | 2017-06-21 |
| JP2017530215A (ja) | 2017-10-12 |
| US10214663B2 (en) | 2019-02-26 |
| TWI675098B (zh) | 2019-10-21 |
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