SG11201700721QA - Target assembly - Google Patents

Target assembly

Info

Publication number
SG11201700721QA
SG11201700721QA SG11201700721QA SG11201700721QA SG11201700721QA SG 11201700721Q A SG11201700721Q A SG 11201700721QA SG 11201700721Q A SG11201700721Q A SG 11201700721QA SG 11201700721Q A SG11201700721Q A SG 11201700721QA SG 11201700721Q A SG11201700721Q A SG 11201700721QA
Authority
SG
Singapore
Prior art keywords
target assembly
target
assembly
Prior art date
Application number
SG11201700721QA
Other languages
English (en)
Inventor
Shinya Nakamura
Yoshihiro Ikeda
Yoshinori Fujii
Yuusuke Miyaguchi
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of SG11201700721QA publication Critical patent/SG11201700721QA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
SG11201700721QA 2014-08-08 2015-06-18 Target assembly SG11201700721QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014163095 2014-08-08
PCT/JP2015/003065 WO2016021101A1 (ja) 2014-08-08 2015-06-18 ターゲットアッセンブリ

Publications (1)

Publication Number Publication Date
SG11201700721QA true SG11201700721QA (en) 2017-02-27

Family

ID=55263401

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201700721QA SG11201700721QA (en) 2014-08-08 2015-06-18 Target assembly

Country Status (7)

Country Link
US (1) US9972479B2 (ko)
JP (1) JP6342497B2 (ko)
KR (1) KR101926676B1 (ko)
CN (1) CN106574362B (ko)
SG (1) SG11201700721QA (ko)
TW (1) TWI615492B (ko)
WO (1) WO2016021101A1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7488135B2 (ja) * 2020-07-02 2024-05-21 株式会社アルバック スパッタリングターゲット及びスパッタリングターゲットの製造方法
CN113416913B (zh) * 2021-07-02 2023-05-09 河南东微电子材料有限公司 一种氧化镁靶材背板的氧化铝涂层制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010107B2 (ja) * 1981-05-25 1985-03-15 日本真空技術株式会社 Ｒｆスパツタリングにおける絶縁物タ−ゲツト用カソ−ド
JP2761109B2 (ja) * 1991-01-28 1998-06-04 松下電工株式会社 プリント配線板およびその製法
JPH04276066A (ja) * 1991-03-01 1992-10-01 Matsushita Electric Ind Co Ltd スパッタリング装置
JPH07292465A (ja) * 1994-04-27 1995-11-07 Idemitsu Material Kk スパッタリング装置
JPH0860353A (ja) * 1994-08-24 1996-03-05 Ulvac Japan Ltd スパッタリングカソード
JPH1025568A (ja) * 1996-07-10 1998-01-27 Sony Corp スパッタリング装置
JPH11236663A (ja) * 1998-02-25 1999-08-31 Seiko Epson Corp スパッタリングターゲット、スパッタリング装置およびスパッタリング方法
JP4820508B2 (ja) * 2000-08-30 2011-11-24 株式会社東芝 スパッタリングターゲットとその製造方法、スパッタリング装置、薄膜の製造方法、電子部品の製造方法
US20020162741A1 (en) * 2001-05-01 2002-11-07 Applied Materials, Inc. Multi-material target backing plate
US7026009B2 (en) * 2002-03-27 2006-04-11 Applied Materials, Inc. Evaluation of chamber components having textured coatings
US6955748B2 (en) * 2002-07-16 2005-10-18 Honeywell International Inc. PVD target constructions comprising projections
JP2005264177A (ja) * 2004-03-16 2005-09-29 Renesas Technology Corp スパッタリング装置およびスパッタリング装置のアッパシールド位置調整方法
US7815782B2 (en) * 2006-06-23 2010-10-19 Applied Materials, Inc. PVD target
JP4602998B2 (ja) * 2007-01-18 2010-12-22 トーカロ株式会社 溶射皮膜形成方法
JP5414340B2 (ja) 2009-04-24 2014-02-12 株式会社アルバック スパッタリング方法
JP5321860B2 (ja) * 2011-09-16 2013-10-23 大日本印刷株式会社 スパッタ装置

Also Published As

Publication number Publication date
CN106574362A (zh) 2017-04-19
US20170229296A1 (en) 2017-08-10
CN106574362B (zh) 2019-06-11
JP6342497B2 (ja) 2018-06-13
US9972479B2 (en) 2018-05-15
KR20170041840A (ko) 2017-04-17
WO2016021101A1 (ja) 2016-02-11
KR101926676B1 (ko) 2019-03-07
TW201612343A (en) 2016-04-01
JPWO2016021101A1 (ja) 2017-05-25
TWI615492B (zh) 2018-02-21

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