SG11201610820YA - System and method for simultaneous dark field and phase contrast inspection - Google Patents

System and method for simultaneous dark field and phase contrast inspection

Info

Publication number
SG11201610820YA
SG11201610820YA SG11201610820YA SG11201610820YA SG11201610820YA SG 11201610820Y A SG11201610820Y A SG 11201610820YA SG 11201610820Y A SG11201610820Y A SG 11201610820YA SG 11201610820Y A SG11201610820Y A SG 11201610820YA SG 11201610820Y A SG11201610820Y A SG 11201610820YA
Authority
SG
Singapore
Prior art keywords
phase contrast
dark field
contrast inspection
simultaneous dark
simultaneous
Prior art date
Application number
SG11201610820YA
Other languages
English (en)
Inventor
Chuanyong Huang
Qing Li
Donald Pettibone
Buzz Graves
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11201610820YA publication Critical patent/SG11201610820YA/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • G01N2021/8822Dark field detection
    • G01N2021/8825Separate detection of dark field and bright field

Landscapes

  • General Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Immunology (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Microscoopes, Condenser (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
SG11201610820YA 2014-07-22 2015-07-21 System and method for simultaneous dark field and phase contrast inspection SG11201610820YA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462027393P 2014-07-22 2014-07-22
US14/804,296 US9726615B2 (en) 2014-07-22 2015-07-20 System and method for simultaneous dark field and phase contrast inspection
PCT/US2015/041409 WO2016014590A1 (en) 2014-07-22 2015-07-21 System and method for simultaneous dark field and phase contrast inspection

Publications (1)

Publication Number Publication Date
SG11201610820YA true SG11201610820YA (en) 2017-02-27

Family

ID=55163659

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201610820YA SG11201610820YA (en) 2014-07-22 2015-07-21 System and method for simultaneous dark field and phase contrast inspection

Country Status (8)

Country Link
US (1) US9726615B2 (enExample)
JP (1) JP6807829B2 (enExample)
KR (1) KR102241899B1 (enExample)
CN (1) CN106575631B (enExample)
DE (1) DE112015003394B4 (enExample)
SG (1) SG11201610820YA (enExample)
TW (1) TWI639822B (enExample)
WO (1) WO2016014590A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9726615B2 (en) 2014-07-22 2017-08-08 Kla-Tencor Corporation System and method for simultaneous dark field and phase contrast inspection
TWI606101B (zh) 2016-12-28 2017-11-21 財團法人工業技術研究院 塗佈組合物及其製備方法
US10422984B2 (en) * 2017-05-12 2019-09-24 Applied Materials, Inc. Flexible mode scanning optical microscopy and inspection system
CN108022849B (zh) * 2017-11-30 2020-06-16 上海华力微电子有限公司 一种亮场缺陷检测设备自动优化光强条件的方法及系统
US10845187B2 (en) * 2018-03-02 2020-11-24 Drexel University Multiscale deformation measurements leveraging tailorable and multispectral speckle patterns
US11067389B2 (en) * 2018-03-13 2021-07-20 Kla Corporation Overlay metrology system and method
US10732130B2 (en) * 2018-06-19 2020-08-04 Kla-Tencor Corporation Embedded particle depth binning based on multiple scattering signals
US11017520B2 (en) * 2018-09-04 2021-05-25 Kla Corporation Multi-wavelength interferometry for defect classification
US10705026B2 (en) * 2018-10-26 2020-07-07 Kla Corporation Scanning differential interference contrast in an imaging system design
US10948423B2 (en) * 2019-02-17 2021-03-16 Kla Corporation Sensitive particle detection with spatially-varying polarization rotator and polarizer
JP7511013B2 (ja) * 2020-02-12 2024-07-04 深▲セン▼華大智造科技股▲ふん▼有限公司 光学結像系及びそれを適用した生化物質検出系
US20240280483A1 (en) * 2021-07-14 2024-08-22 Hitachi High-Tech Corporation Defect inspection device

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JPS5961142A (ja) * 1982-09-30 1984-04-07 Fujitsu Ltd 欠陥検出装置
US5798829A (en) 1996-03-05 1998-08-25 Kla-Tencor Corporation Single laser bright field and dark field system for detecting anomalies of a sample
US6999183B2 (en) 1998-11-18 2006-02-14 Kla-Tencor Corporation Detection system for nanometer scale topographic measurements of reflective surfaces
US6809808B2 (en) * 2002-03-22 2004-10-26 Applied Materials, Inc. Wafer defect detection system with traveling lens multi-beam scanner
US20030215791A1 (en) 2002-05-20 2003-11-20 Applied Spectral Imaging Ltd. Method of and system for multiplexed analysis by spectral imaging
JP3878107B2 (ja) * 2002-11-06 2007-02-07 株式会社日立ハイテクノロジーズ 欠陥検査方法及びその装置
US7957066B2 (en) * 2003-02-21 2011-06-07 Kla-Tencor Corporation Split field inspection system using small catadioptric objectives
US20050254065A1 (en) * 2004-05-12 2005-11-17 Stokowski Stanley E Method and apparatus for detecting surface characteristics on a mask blank
WO2007016682A2 (en) * 2005-08-02 2007-02-08 Kla-Tencor Technologies Corporation Systems configured to generate output corresponding to defects on a specimen
US7345754B1 (en) 2005-09-16 2008-03-18 Kla-Tencor Technologies Corp. Fourier filters and wafer inspection systems
WO2008048612A2 (en) 2006-10-17 2008-04-24 Hnuphotonics Miniature microscope camera
US7728969B2 (en) 2006-12-05 2010-06-01 Kla-Tencor Technologies Corp. Methods and systems for identifying defect types on a wafer
JP2008151865A (ja) 2006-12-14 2008-07-03 Olympus Corp 顕微鏡システム
DE102007047935A1 (de) 2007-03-19 2008-09-25 Vistec Semiconductor Systems Gmbh Vorrichtung und Verfahren zur Inspektion von Defekten am Randbereich eines Wafers und Verwendung der Vorrichtung in einer Inspektionseinrichtung für Wafer
US7782452B2 (en) 2007-08-31 2010-08-24 Kla-Tencor Technologies Corp. Systems and method for simultaneously inspecting a specimen with two distinct channels
JP5104346B2 (ja) * 2008-01-29 2012-12-19 株式会社ニコン 表面欠陥検査方法及びその装置
US20120225475A1 (en) 2010-11-16 2012-09-06 1087 Systems, Inc. Cytometry system with quantum cascade laser source, acoustic detector, and micro-fluidic cell handling system configured for inspection of individual cells
US10048480B2 (en) 2011-01-07 2018-08-14 Zeta Instruments, Inc. 3D microscope including insertable components to provide multiple imaging and measurement capabilities
US9279774B2 (en) 2011-07-12 2016-03-08 Kla-Tencor Corp. Wafer inspection
EP2737303B1 (en) * 2011-07-28 2017-06-28 Paul Scherrer Institut Method for image fusion based on principal component analysis
US8755044B2 (en) 2011-08-15 2014-06-17 Kla-Tencor Corporation Large particle detection for multi-spot surface scanning inspection systems
WO2013134068A1 (en) 2012-03-07 2013-09-12 Kla-Tencor Corporation Wafer and reticle inspection systems and method for selecting illumination pupil configurations
US9053390B2 (en) 2012-08-14 2015-06-09 Kla-Tencor Corporation Automated inspection scenario generation
JP6124774B2 (ja) * 2013-03-22 2017-05-10 オリンパス株式会社 位相分布計測方法、及び、位相分布計測装置
US9726615B2 (en) 2014-07-22 2017-08-08 Kla-Tencor Corporation System and method for simultaneous dark field and phase contrast inspection

Also Published As

Publication number Publication date
DE112015003394B4 (de) 2023-04-27
KR102241899B1 (ko) 2021-04-16
DE112015003394T5 (de) 2017-03-30
US9726615B2 (en) 2017-08-08
KR20170033884A (ko) 2017-03-27
CN106575631B (zh) 2019-02-01
TW201617603A (zh) 2016-05-16
US20160025645A1 (en) 2016-01-28
TWI639822B (zh) 2018-11-01
JP6807829B2 (ja) 2021-01-06
JP2017531162A (ja) 2017-10-19
CN106575631A (zh) 2017-04-19
WO2016014590A1 (en) 2016-01-28

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