SG11201608127SA - Method for polishing semiconductor substrates - Google Patents

Method for polishing semiconductor substrates

Info

Publication number
SG11201608127SA
SG11201608127SA SG11201608127SA SG11201608127SA SG11201608127SA SG 11201608127S A SG11201608127S A SG 11201608127SA SG 11201608127S A SG11201608127S A SG 11201608127SA SG 11201608127S A SG11201608127S A SG 11201608127SA SG 11201608127S A SG11201608127S A SG 11201608127SA
Authority
SG
Singapore
Prior art keywords
semiconductor substrates
polishing semiconductor
polishing
substrates
semiconductor
Prior art date
Application number
SG11201608127SA
Other languages
English (en)
Inventor
Masashi Teramoto
Tatsuya Nakauchi
Noriaki Sugita
Shinichi Haba
Akiko Miyamoto
Original Assignee
Nitta Haas Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitta Haas Inc filed Critical Nitta Haas Inc
Publication of SG11201608127SA publication Critical patent/SG11201608127SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201608127SA 2014-03-31 2015-03-30 Method for polishing semiconductor substrates SG11201608127SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014073797A JP6314019B2 (ja) 2014-03-31 2014-03-31 半導体基板の研磨方法
PCT/JP2015/059925 WO2015152152A1 (ja) 2014-03-31 2015-03-30 半導体基板の研磨方法

Publications (1)

Publication Number Publication Date
SG11201608127SA true SG11201608127SA (en) 2016-11-29

Family

ID=54240475

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201608127SA SG11201608127SA (en) 2014-03-31 2015-03-30 Method for polishing semiconductor substrates

Country Status (9)

Country Link
US (1) US10249486B2 (ja)
JP (1) JP6314019B2 (ja)
KR (1) KR102380782B1 (ja)
CN (1) CN106165063A (ja)
DE (1) DE112015001589T5 (ja)
MY (1) MY188234A (ja)
SG (1) SG11201608127SA (ja)
TW (1) TW201600230A (ja)
WO (1) WO2015152152A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6690606B2 (ja) * 2017-07-14 2020-04-28 信越半導体株式会社 研磨方法

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09190626A (ja) * 1995-11-10 1997-07-22 Kao Corp 研磨材組成物、磁気記録媒体用基板及びその製造方法並びに磁気記録媒体
US6383404B1 (en) * 1998-08-19 2002-05-07 Hoya Corporation Glass substrate for magnetic recording medium, magnetic recording medium, and method of manufacturing the same
JP4593064B2 (ja) * 2002-09-30 2010-12-08 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP4212861B2 (ja) 2002-09-30 2009-01-21 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いたシリコンウエハの研磨方法、並びにリンス用組成物及びそれを用いたシリコンウエハのリンス方法
JP2004128069A (ja) 2002-09-30 2004-04-22 Fujimi Inc 研磨用組成物及びそれを用いた研磨方法
JP4225765B2 (ja) * 2002-10-31 2009-02-18 日揮触媒化成株式会社 低誘電率非晶質シリカ系被膜の形成方法および該方法より得られる低誘電率非晶質シリカ系被膜
KR100516886B1 (ko) * 2002-12-09 2005-09-23 제일모직주식회사 실리콘 웨이퍼의 최종 연마용 슬러리 조성물
EP1758962B1 (en) * 2004-06-22 2013-10-30 Asahi Glass Company, Limited Polishing method for glass substrate, and glass substrate
JP2007103515A (ja) 2005-09-30 2007-04-19 Fujimi Inc 研磨方法
WO2007072890A1 (en) * 2005-12-22 2007-06-28 Asahi Glass Co., Ltd. Glass substrate for mask blank and method of polishing for producing the same
US7712333B2 (en) * 2006-03-29 2010-05-11 Asahi Glass Company, Limited Method for smoothing a surface of a glass substrate for a reflective mask blank used in EUV lithography
US20070256703A1 (en) * 2006-05-03 2007-11-08 Asahi Glass Company, Limited Method for removing contaminant from surface of glass substrate
JP4907317B2 (ja) * 2006-11-30 2012-03-28 日揮触媒化成株式会社 金平糖状無機酸化物ゾル、その製造方法および前記ゾルを含む研磨剤
JP2009020920A (ja) * 2007-07-10 2009-01-29 Shin Etsu Chem Co Ltd 磁気記録媒体用多結晶シリコン基板および磁気記録媒体
JP5493861B2 (ja) * 2007-10-09 2014-05-14 株式会社リコー Ｉｉｉ族窒化物結晶基板の製造方法
JP5474400B2 (ja) 2008-07-03 2014-04-16 株式会社フジミインコーポレーテッド 半導体用濡れ剤、それを用いた研磨用組成物および研磨方法
GB2478250B (en) * 2008-12-22 2014-09-03 Kao Corp Polishing liquid composition for magnetic-disk substrate
JP5516426B2 (ja) * 2009-02-16 2014-06-11 日立化成株式会社 研磨剤及び研磨方法
JP5326638B2 (ja) * 2009-02-18 2013-10-30 富士電機株式会社 磁気記録媒体用ガラス基板の製造方法、それが使用される磁気記録媒体用ガラス基板、および、垂直磁気記録媒体
DE102009011622B4 (de) * 2009-03-04 2018-10-25 Siltronic Ag Epitaxierte Siliciumscheibe und Verfahren zur Herstellung einer epitaxierten Siliciumscheibe
US8440541B2 (en) * 2010-02-25 2013-05-14 Memc Electronic Materials, Inc. Methods for reducing the width of the unbonded region in SOI structures
US20130095660A1 (en) 2010-07-02 2013-04-18 Sumco Corporation Method for polishing silicon wafer
JP5940278B2 (ja) * 2010-10-27 2016-06-29 花王株式会社 ガラスハードディスク基板の製造方法
JP5975654B2 (ja) * 2011-01-27 2016-08-23 Hoya株式会社 磁気ディスク用ガラス基板の製造方法及び磁気ディスクの製造方法
CN102585705B (zh) * 2011-12-21 2014-02-05 上海新安纳电子科技有限公司 一种用于蓝宝石衬底的化学机械抛光液及其应用
JP2014041978A (ja) 2012-08-23 2014-03-06 Fujimi Inc 研磨用組成物、研磨用組成物の製造方法、及び研磨用組成物原液の製造方法
US9259818B2 (en) * 2012-11-06 2016-02-16 Sinmat, Inc. Smooth diamond surfaces and CMP method for forming
US20150376464A1 (en) * 2013-02-13 2015-12-31 Fujimi Incorporated Polishing composition, method for producing polishing composition and method for producing polished article
JP6091281B2 (ja) * 2013-03-25 2017-03-08 住友化学株式会社 圧電体薄膜積層基板
CN103194148B (zh) 2013-04-23 2014-10-22 清华大学 化学机械抛光水性组合物及其用途
KR102127907B1 (ko) * 2013-09-27 2020-06-29 호야 가부시키가이샤 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조방법
JP5767357B1 (ja) * 2014-03-26 2015-08-19 Hoya株式会社 マスクブランク用基板、マスクブランク及び転写用マスク、並びにそれらの製造方法

Also Published As

Publication number Publication date
JP6314019B2 (ja) 2018-04-18
US20170178888A1 (en) 2017-06-22
KR102380782B1 (ko) 2022-03-29
KR20160138128A (ko) 2016-12-02
US10249486B2 (en) 2019-04-02
TW201600230A (zh) 2016-01-01
CN106165063A (zh) 2016-11-23
JP2015198112A (ja) 2015-11-09
MY188234A (en) 2021-11-24
DE112015001589T5 (de) 2017-02-23
WO2015152152A1 (ja) 2015-10-08

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