SG11201606358XA - Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation - Google Patents

Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation

Info

Publication number
SG11201606358XA
SG11201606358XA SG11201606358XA SG11201606358XA SG11201606358XA SG 11201606358X A SG11201606358X A SG 11201606358XA SG 11201606358X A SG11201606358X A SG 11201606358XA SG 11201606358X A SG11201606358X A SG 11201606358XA SG 11201606358X A SG11201606358X A SG 11201606358XA
Authority
SG
Singapore
Prior art keywords
boron
systems
methods
beam current
performance during
Prior art date
Application number
SG11201606358XA
Other languages
English (en)
Inventor
Ashwini K Sinha
Stanley M Smith
Douglas C Heiderman
Serge M Campeau
Original Assignee
Praxair Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Praxair Technology Inc filed Critical Praxair Technology Inc
Publication of SG11201606358XA publication Critical patent/SG11201606358XA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/20—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers
    • H01J27/22—Metal ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32807—Construction (includes replacing parts of the apparatus)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0473—Changing particle velocity accelerating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/336—Changing physical properties of treated surfaces
    • H01J2237/3365—Plasma source implantation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/32—Hydrogen storage

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Inorganic Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
SG11201606358XA 2014-03-03 2015-03-03 Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation SG11201606358XA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461947064P 2014-03-03 2014-03-03
US14/635,413 US9570271B2 (en) 2014-03-03 2015-03-02 Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation
PCT/US2015/018396 WO2015134430A1 (en) 2014-03-02 2015-03-03 Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation

Publications (1)

Publication Number Publication Date
SG11201606358XA true SG11201606358XA (en) 2016-09-29

Family

ID=52633734

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201606358XA SG11201606358XA (en) 2014-03-03 2015-03-03 Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation
SG10201600291PA SG10201600291PA (en) 2014-03-03 2016-01-14 Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201600291PA SG10201600291PA (en) 2014-03-03 2016-01-14 Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation

Country Status (8)

Country Link
US (3) US9570271B2 (ja)
EP (1) EP3114699B1 (ja)
JP (2) JP6594888B2 (ja)
KR (2) KR102465137B1 (ja)
CN (3) CN106062918B (ja)
SG (2) SG11201606358XA (ja)
TW (1) TWI748939B (ja)
WO (1) WO2015134430A1 (ja)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9570271B2 (en) * 2014-03-03 2017-02-14 Praxair Technology, Inc. Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation
US9677171B2 (en) * 2014-06-06 2017-06-13 Varian Semiconductor Equipment Associates, Inc. Method of improving ion beam quality in a non-mass-analyzed ion implantation system
KR20170004381A (ko) * 2015-07-02 2017-01-11 삼성전자주식회사 불순물 영역을 포함하는 반도체 장치의 제조 방법
EP3188214A1 (en) * 2015-12-29 2017-07-05 Praxair Technology, Inc. Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation
US10221201B2 (en) 2015-12-31 2019-03-05 Praxair Technology, Inc. Tin-containing dopant compositions, systems and methods for use in ION implantation systems
KR102194518B1 (ko) * 2016-03-28 2020-12-23 엔테그리스, 아이엔씨. 수소화된 동위원소-풍부한 삼불화 붕소 도펀트 소스 가스 조성물
CN109196617B (zh) * 2016-05-13 2021-02-12 恩特格里斯公司 于氮离子植入中改善离子源效能的氟化组合物
US10269542B2 (en) * 2017-06-26 2019-04-23 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Ionization chamber, ion-implantation apparatus and ion-implantation method
CN107293469B (zh) * 2017-06-26 2019-03-01 武汉华星光电半导体显示技术有限公司 电离室、离子植入设备及离子植入方法
US10597773B2 (en) * 2017-08-22 2020-03-24 Praxair Technology, Inc. Antimony-containing materials for ion implantation
CN107680904A (zh) * 2017-09-04 2018-02-09 天津大学 硼‑11同位素在集成电路的半导体掺杂中的应用及方法
CN109300778B (zh) * 2018-09-30 2021-10-15 上海华力集成电路制造有限公司 离子注入方法
TWI733275B (zh) * 2018-12-15 2021-07-11 美商恩特葛瑞斯股份有限公司 氟離子植入方法及系統
US11120966B2 (en) * 2019-09-03 2021-09-14 Applied Materials, Inc. System and method for improved beam current from an ion source
US11232925B2 (en) 2019-09-03 2022-01-25 Applied Materials, Inc. System and method for improved beam current from an ion source
KR20220061233A (ko) * 2019-09-20 2022-05-12 엔테그리스, 아이엔씨. 이온 주입을 위한 플라즈마 침지 방법
CN117038423A (zh) * 2023-10-09 2023-11-10 上海凡森璞瑞新材料股份有限公司 包含四氟化锗混合气的离子注入系统、方法及掺杂物质

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2787564A (en) 1954-10-28 1957-04-02 Bell Telephone Labor Inc Forming semiconductive devices by ionic bombardment
JP2533639B2 (ja) 1988-10-07 1996-09-11 株式会社富士電機総合研究所 Ｐ形炭素添加非晶質シリコンの生成方法
US5395783A (en) 1993-02-16 1995-03-07 Texas Instruments Incorporated Electronic device and process achieving a reduction in alpha particle emissions from boron-based compounds essentially free of boron-10
JPH0875097A (ja) * 1994-09-01 1996-03-19 Sumitomo Seika Chem Co Ltd 圧力調整弁の出流れ防止方法と防止装置
US6132492A (en) 1994-10-13 2000-10-17 Advanced Technology Materials, Inc. Sorbent-based gas storage and delivery system for dispensing of high-purity gas, and apparatus and process for manufacturing semiconductor devices, products and precursor structures utilizing same
JPH09219173A (ja) * 1996-02-09 1997-08-19 Nissin Electric Co Ltd イオン注入装置
JPH09259779A (ja) * 1996-03-15 1997-10-03 Nissin Electric Co Ltd イオン源およびそれを用いたイオン注入装置
US5940724A (en) 1997-04-30 1999-08-17 International Business Machines Corporation Method for extended ion implanter source lifetime
US6007609A (en) 1997-12-18 1999-12-28 Uop Llc Pressurized container with restrictor tube having multiple capillary passages
US6511760B1 (en) 1998-02-27 2003-01-28 Restek Corporation Method of passivating a gas vessel or component of a gas transfer system using a silicon overlay coating
US5937895A (en) 1998-04-17 1999-08-17 Uop Llc Fail-safe delivery valve for pressurized tanks
US6045115A (en) 1998-04-17 2000-04-04 Uop Llc Fail-safe delivery arrangement for pressurized containers
US6101816A (en) 1998-04-28 2000-08-15 Advanced Technology Materials, Inc. Fluid storage and dispensing system
US6797189B2 (en) 1999-03-25 2004-09-28 Hoiman (Raymond) Hung Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon
US20050230047A1 (en) * 2000-08-11 2005-10-20 Applied Materials, Inc. Plasma immersion ion implantation apparatus
US7465478B2 (en) 2000-08-11 2008-12-16 Applied Materials, Inc. Plasma immersion ion implantation process
CN100385605C (zh) * 2000-11-30 2008-04-30 赛米奎珀公司 离子注入系统及离子源
US7064491B2 (en) 2000-11-30 2006-06-20 Semequip, Inc. Ion implantation system and control method
US7494530B2 (en) 2002-12-10 2009-02-24 Advanced Technology Materials, Inc. Gas storage and dispensing system with monolithic carbon adsorbent
US7791047B2 (en) * 2003-12-12 2010-09-07 Semequip, Inc. Method and apparatus for extracting ions from an ion source for use in ion implantation
GB2412488B (en) 2004-03-26 2007-03-28 Applied Materials Inc Ion sources
US7563308B2 (en) 2004-09-23 2009-07-21 Air Products And Chemicals, Inc. Ionic liquid based mixtures for gas storage and delivery
CN103170447B (zh) * 2005-08-30 2015-02-18 先进科技材料公司 使用替代的氟化含硼前驱体的硼离子注入和用于注入的大氢化硼的形成
KR100757347B1 (ko) * 2006-08-30 2007-09-10 삼성전자주식회사 이온 주입 장치
US7732309B2 (en) * 2006-12-08 2010-06-08 Applied Materials, Inc. Plasma immersed ion implantation process
US7708028B2 (en) 2006-12-08 2010-05-04 Praxair Technology, Inc. Fail-safe vacuum actuated valve for high pressure delivery systems
US7807074B2 (en) 2006-12-12 2010-10-05 Honeywell International Inc. Gaseous dielectrics with low global warming potentials
US7586109B2 (en) 2007-01-25 2009-09-08 Varian Semiconductor Equipment Associates, Inc. Technique for improving the performance and extending the lifetime of an ion source with gas dilution
US7655931B2 (en) 2007-03-29 2010-02-02 Varian Semiconductor Equipment Associates, Inc. Techniques for improving the performance and extending the lifetime of an ion source with gas mixing
SG188150A1 (en) 2008-02-11 2013-03-28 Advanced Tech Materials Ion source cleaning in semiconductor processing systems
US7905247B2 (en) 2008-06-20 2011-03-15 Praxair Technology, Inc. Vacuum actuated valve for high capacity storage and delivery systems
US20100032639A1 (en) 2008-08-07 2010-02-11 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US7973293B2 (en) 2009-01-09 2011-07-05 Taiwan Semiconductor Manufacturing Co., Ltd. Implantation quality improvement by xenon/hydrogen dilution gas
US7858503B2 (en) 2009-02-06 2010-12-28 Applied Materials, Inc. Ion implanted substrate having capping layer and method
US20110021011A1 (en) 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
JP5373508B2 (ja) * 2009-08-27 2013-12-18 住友精化株式会社 ジボランの製造方法
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8062965B2 (en) 2009-10-27 2011-11-22 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
JP5919195B2 (ja) 2009-10-27 2016-05-18 インテグリス・インコーポレーテッド イオン注入システムおよび方法
US8779383B2 (en) 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
TWI689467B (zh) * 2010-02-26 2020-04-01 美商恩特葛瑞斯股份有限公司 用以增進離子植入系統中之離子源的壽命及性能之方法與設備
JP5141732B2 (ja) * 2010-08-11 2013-02-13 日新イオン機器株式会社 イオン源電極のクリーニング方法
US9984855B2 (en) 2010-11-17 2018-05-29 Axcelis Technologies, Inc. Implementation of co-gases for germanium and boron ion implants
US9805912B2 (en) 2010-11-17 2017-10-31 Axcelis Technologies, Inc. Hydrogen COGas for carbon implant
US8522817B1 (en) 2010-12-28 2013-09-03 Jefferson Science Associates, Llc Apparatus and method for fast recovery and charge of insulation gas
JP5370462B2 (ja) * 2011-11-07 2013-12-18 日新イオン機器株式会社 イオン源電極のクリーニング装置
US9142402B2 (en) * 2011-11-30 2015-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Uniform shallow trench isolation regions and the method of forming the same
US8779395B2 (en) 2011-12-01 2014-07-15 Axcelis Technologies, Inc. Automatic control system for selection and optimization of co-gas flow levels
CN103165465B (zh) * 2011-12-19 2015-08-19 中芯国际集成电路制造(上海)有限公司 采用e-SiGe的PMOS制造方法
CN103021777B (zh) * 2012-12-10 2015-09-09 京东方科技集团股份有限公司 一种离子注入方法及装置
US9570271B2 (en) * 2014-03-03 2017-02-14 Praxair Technology, Inc. Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation

Also Published As

Publication number Publication date
CN109119316B (zh) 2022-02-08
CN106935465A (zh) 2017-07-07
SG10201600291PA (en) 2017-07-28
US9570271B2 (en) 2017-02-14
WO2015134430A1 (en) 2015-09-11
US9548181B2 (en) 2017-01-17
US20170032941A1 (en) 2017-02-02
JP2017515258A (ja) 2017-06-08
JP2017120755A (ja) 2017-07-06
US10090133B2 (en) 2018-10-02
KR20160144966A (ko) 2016-12-19
KR20170078490A (ko) 2017-07-07
TWI748939B (zh) 2021-12-11
CN109119316A (zh) 2019-01-01
CN106062918A (zh) 2016-10-26
TW201733901A (zh) 2017-10-01
WO2015134430A8 (en) 2016-10-13
JP6594888B2 (ja) 2019-10-23
EP3114699B1 (en) 2020-11-04
KR102465137B1 (ko) 2022-11-10
US20160133427A1 (en) 2016-05-12
CN106062918B (zh) 2018-09-21
EP3114699A1 (en) 2017-01-11
US20150248992A1 (en) 2015-09-03

Similar Documents

Publication Publication Date Title
SG10201600291PA (en) Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation
IL275263A (en) Preparations and methods for inhibiting T cell exhaustion
GB201609438D0 (en) Compositions and methods for cell targeted HPV treatment
IL253746A0 (en) Compositions and methods using them for carbon-impregnated silicon-containing layers
EP3025372A4 (en) Controlled ion implantation into silicon carbide
EP3331582A4 (en) METHODS AND COMPOSITIONS FOR THE TREATMENT OF TRANSPLANTATION CELLS
SG11201506605XA (en) Ion implantation compositions, systems, and methods
SG11201500684RA (en) Silicon-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during silicon ion implantation
ZA201700071B (en) Solar cell emitter region fabrication using ion implantation
IL257326A (en) Charged ion channel blockers and methods of their use
SG10202009448VA (en) Compositions and Methods for Identifying Rare Cells
PL3394248T3 (pl) Kompozycja komórek dendrytycznych
HK1232152A1 (zh) 用於治療異常細胞生長的方法和組合物
EP3389158A4 (en) DEVICE FOR PREDICTING THE QUANTITY OF ELECTRICITY PRODUCED, METHOD FOR PREDICTING THE QUANTITY OF ELECTRICITY PRODUCED, DEVICE FOR STABILIZING THE GRID, AND METHOD FOR STABILIZING THE GRID
EP3237058A4 (en) Methods, compositions, and systems for device implantation
EP3216044A4 (en) Systems and methods for suppressing unwanted ions
SG10202010058QA (en) Dopant compositions for ion implantation
IL246607B (en) Improved cellular preparations and methods for cancer treatment
HK1247104A1 (zh) 使用luterion抑制癌細胞中端粒酶的方法
SG10202007780YA (en) Tin-containing dopant compositions, systems and methods for use in ion implantation systems
HK1220358A1 (zh) 減毒活甲病毒製劑的組合物和方法
IL259330A (en) Methods, preparations and systems for growing in culture and characterization of picky plant bacteria
SG10201510087WA (en) Contamination-proof ion guide for mass spectrometry
GB201519936D0 (en) Solar ray concentration system for power generation
IL253554A0 (en) Hybrid connected heliostat