SG11201606358XA - Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation - Google Patents

Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation

Info

Publication number
SG11201606358XA
SG11201606358XA SG11201606358XA SG11201606358XA SG11201606358XA SG 11201606358X A SG11201606358X A SG 11201606358XA SG 11201606358X A SG11201606358X A SG 11201606358XA SG 11201606358X A SG11201606358X A SG 11201606358XA SG 11201606358X A SG11201606358X A SG 11201606358XA
Authority
SG
Singapore
Prior art keywords
boron
systems
methods
beam current
performance during
Prior art date
Application number
SG11201606358XA
Inventor
Ashwini K Sinha
Stanley M Smith
Douglas C Heiderman
Serge M Campeau
Original Assignee
Praxair Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Praxair Technology Inc filed Critical Praxair Technology Inc
Publication of SG11201606358XA publication Critical patent/SG11201606358XA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/20—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers
    • H01J27/22—Metal ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32807—Construction (includes replacing parts of the apparatus)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0473—Changing particle velocity accelerating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/336—Changing physical properties of treated surfaces
    • H01J2237/3365—Plasma source implantation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/32—Hydrogen storage

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Inorganic Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
SG11201606358XA 2014-03-03 2015-03-03 Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation SG11201606358XA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461947064P 2014-03-03 2014-03-03
US14/635,413 US9570271B2 (en) 2014-03-03 2015-03-02 Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation
PCT/US2015/018396 WO2015134430A1 (en) 2014-03-02 2015-03-03 Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation

Publications (1)

Publication Number Publication Date
SG11201606358XA true SG11201606358XA (en) 2016-09-29

Family

ID=52633734

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201606358XA SG11201606358XA (en) 2014-03-03 2015-03-03 Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation
SG10201600291PA SG10201600291PA (en) 2014-03-03 2016-01-14 Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201600291PA SG10201600291PA (en) 2014-03-03 2016-01-14 Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation

Country Status (8)

Country Link
US (3) US9570271B2 (en)
EP (1) EP3114699B1 (en)
JP (2) JP6594888B2 (en)
KR (2) KR102465137B1 (en)
CN (3) CN109119316B (en)
SG (2) SG11201606358XA (en)
TW (1) TWI748939B (en)
WO (1) WO2015134430A1 (en)

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US10597773B2 (en) * 2017-08-22 2020-03-24 Praxair Technology, Inc. Antimony-containing materials for ion implantation
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US11120966B2 (en) * 2019-09-03 2021-09-14 Applied Materials, Inc. System and method for improved beam current from an ion source
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Also Published As

Publication number Publication date
CN106935465A (en) 2017-07-07
CN106062918A (en) 2016-10-26
US9570271B2 (en) 2017-02-14
KR102465137B1 (en) 2022-11-10
US20170032941A1 (en) 2017-02-02
US9548181B2 (en) 2017-01-17
JP2017515258A (en) 2017-06-08
EP3114699B1 (en) 2020-11-04
US10090133B2 (en) 2018-10-02
CN109119316A (en) 2019-01-01
TWI748939B (en) 2021-12-11
KR20160144966A (en) 2016-12-19
WO2015134430A1 (en) 2015-09-11
SG10201600291PA (en) 2017-07-28
KR20170078490A (en) 2017-07-07
US20160133427A1 (en) 2016-05-12
JP2017120755A (en) 2017-07-06
WO2015134430A8 (en) 2016-10-13
TW201733901A (en) 2017-10-01
EP3114699A1 (en) 2017-01-11
CN109119316B (en) 2022-02-08
CN106062918B (en) 2018-09-21
JP6594888B2 (en) 2019-10-23
US20150248992A1 (en) 2015-09-03

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