SG11201604730PA - Magnetic sputtering target - Google Patents

Magnetic sputtering target

Info

Publication number
SG11201604730PA
SG11201604730PA SG11201604730PA SG11201604730PA SG11201604730PA SG 11201604730P A SG11201604730P A SG 11201604730PA SG 11201604730P A SG11201604730P A SG 11201604730PA SG 11201604730P A SG11201604730P A SG 11201604730PA SG 11201604730P A SG11201604730P A SG 11201604730PA
Authority
SG
Singapore
Prior art keywords
sputtering target
magnetic sputtering
magnetic
target
sputtering
Prior art date
Application number
SG11201604730PA
Other languages
English (en)
Inventor
Yuki Ikeda
Atsutoshi Arakawa
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11201604730PA publication Critical patent/SG11201604730PA/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Physical Vapour Deposition (AREA)
  • Magnetic Record Carriers (AREA)
SG11201604730PA 2014-03-18 2015-03-13 Magnetic sputtering target SG11201604730PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014055092 2014-03-18
PCT/JP2015/057428 WO2015141571A1 (ja) 2014-03-18 2015-03-13 磁性材スパッタリングターゲット

Publications (1)

Publication Number Publication Date
SG11201604730PA true SG11201604730PA (en) 2016-08-30

Family

ID=54144540

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201604730PA SG11201604730PA (en) 2014-03-18 2015-03-13 Magnetic sputtering target

Country Status (5)

Country Link
JP (1) JP6030271B2 (ja)
CN (2) CN114807874A (ja)
MY (1) MY173140A (ja)
SG (1) SG11201604730PA (ja)
WO (1) WO2015141571A1 (ja)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000169960A (ja) * 1998-12-04 2000-06-20 Japan Energy Corp 光ディスク記録膜形成用スパッタリングターゲット
KR100994663B1 (ko) * 2005-10-04 2010-11-16 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 스퍼터링 타깃
US20080202916A1 (en) * 2007-02-22 2008-08-28 Heraeus Incorporated Controlling magnetic leakage flux in sputtering targets containing magnetic and non-magnetic elements
JP2009191359A (ja) * 2008-01-15 2009-08-27 Hitachi Metals Ltd Ｆｅ−Ｃｏ−Ｚｒ系合金ターゲット材
CN102333905B (zh) * 2009-03-27 2013-09-04 吉坤日矿日石金属株式会社 非磁性材料粒子分散型强磁性材料溅射靶
CN103081009B (zh) * 2010-08-31 2016-05-18 吉坤日矿日石金属株式会社 Fe-Pt型强磁性材料溅射靶
SG188602A1 (en) * 2010-12-15 2013-04-30 Jx Nippon Mining & Metals Corp Ferromagnetic sputtering target and method for manufacturing same
US9945026B2 (en) * 2010-12-20 2018-04-17 Jx Nippon Mining & Metals Corporation Fe-Pt-based sputtering target with dispersed C grains
JP5497904B2 (ja) * 2011-03-30 2014-05-21 Ｊｘ日鉱日石金属株式会社 磁気記録膜用スパッタリングターゲット
MY167825A (en) * 2012-06-18 2018-09-26 Jx Nippon Mining & Metals Corp Sputtering target for magnetic recording film

Also Published As

Publication number Publication date
CN114807874A (zh) 2022-07-29
JPWO2015141571A1 (ja) 2017-04-06
WO2015141571A1 (ja) 2015-09-24
MY173140A (en) 2019-12-31
JP6030271B2 (ja) 2016-11-24
CN106795620A (zh) 2017-05-31

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