MY173140A - Magnetic sputtering target - Google Patents

Magnetic sputtering target

Info

Publication number
MY173140A
MY173140A MYPI2016702439A MYPI2016702439A MY173140A MY 173140 A MY173140 A MY 173140A MY PI2016702439 A MYPI2016702439 A MY PI2016702439A MY PI2016702439 A MYPI2016702439 A MY PI2016702439A MY 173140 A MY173140 A MY 173140A
Authority
MY
Malaysia
Prior art keywords
sputtering target
nonmagnetic
sputtering
magnetic sputtering
dispersed
Prior art date
Application number
MYPI2016702439A
Inventor
Atsutoshi Arakawa
Yuki Ikeda
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of MY173140A publication Critical patent/MY173140A/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Physical Vapour Deposition (AREA)
  • Magnetic Record Carriers (AREA)

Abstract

A sputtering target comprising a metal matrix phase containing Fe, and a nonmagnetic phase which exists as grains in a dispersed state, wherein the nonmagnetic phase contains 0.1 to 40 mol% of C, and an integral width of a diffraction peak having the highest intensity among single peaks of X-ray diffraction is 0.8 or less. Provided is a nonmagnetic grain-dispersed sputtering target capable of suppressing the generation of initial particles during sputtering, considerably reducing the burn-in time, and yielding a stable discharge during sputtering.
MYPI2016702439A 2014-03-18 2015-03-13 Magnetic sputtering target MY173140A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014055092 2014-03-18

Publications (1)

Publication Number Publication Date
MY173140A true MY173140A (en) 2019-12-31

Family

ID=54144540

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2016702439A MY173140A (en) 2014-03-18 2015-03-13 Magnetic sputtering target

Country Status (5)

Country Link
JP (1) JP6030271B2 (en)
CN (2) CN106795620A (en)
MY (1) MY173140A (en)
SG (1) SG11201604730PA (en)
WO (1) WO2015141571A1 (en)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000169960A (en) * 1998-12-04 2000-06-20 Japan Energy Corp Sputtering target for forming optical disk recording film
WO2007040014A1 (en) * 2005-10-04 2007-04-12 Nippon Mining & Metals Co., Ltd. Sputtering target
US20080202916A1 (en) * 2007-02-22 2008-08-28 Heraeus Incorporated Controlling magnetic leakage flux in sputtering targets containing magnetic and non-magnetic elements
JP2009191359A (en) * 2008-01-15 2009-08-27 Hitachi Metals Ltd Fe-Co-Zr BASED ALLOY TARGET MATERIAL
MY150804A (en) * 2009-03-27 2014-02-28 Jx Nippon Mining & Metals Corp Nonmagnetic material particle-dispersed ferromagnetic material sputtering target
JP5226155B2 (en) * 2010-08-31 2013-07-03 Ｊｘ日鉱日石金属株式会社 Fe-Pt ferromagnetic sputtering target
JP4970633B1 (en) * 2010-12-15 2012-07-11 Ｊｘ日鉱日石金属株式会社 Ferromagnetic material sputtering target and manufacturing method thereof
JP5290468B2 (en) * 2010-12-20 2013-09-18 Ｊｘ日鉱日石金属株式会社 Fe-Pt sputtering target in which C particles are dispersed
CN103459656B (en) * 2011-03-30 2015-05-06 吉坤日矿日石金属株式会社 Sputtering target for magnetic recording film
US9540724B2 (en) * 2012-06-18 2017-01-10 Jx Nippon Mining & Metals Corporation Sputtering target for magnetic recording film

Also Published As

Publication number Publication date
JP6030271B2 (en) 2016-11-24
CN114807874A (en) 2022-07-29
SG11201604730PA (en) 2016-08-30
WO2015141571A1 (en) 2015-09-24
JPWO2015141571A1 (en) 2017-04-06
CN106795620A (en) 2017-05-31

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