SG11201504292QA - Method for manufacturing a nanolithography mask - Google Patents

Method for manufacturing a nanolithography mask

Info

Publication number
SG11201504292QA
SG11201504292QA SG11201504292QA SG11201504292QA SG11201504292QA SG 11201504292Q A SG11201504292Q A SG 11201504292QA SG 11201504292Q A SG11201504292Q A SG 11201504292QA SG 11201504292Q A SG11201504292Q A SG 11201504292QA SG 11201504292Q A SG11201504292Q A SG 11201504292QA
Authority
SG
Singapore
Prior art keywords
manufacturing
nanolithography mask
nanolithography
mask
Prior art date
Application number
SG11201504292QA
Other languages
English (en)
Inventor
Christophe Navarro
Maxime Argoud
Xavier Chevalier
Raluca Tiron
Ahmed Gharbi
Original Assignee
Arkema France
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arkema France, Commissariat Energie Atomique filed Critical Arkema France
Publication of SG11201504292QA publication Critical patent/SG11201504292QA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L53/00—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Materials For Photolithography (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
SG11201504292QA 2012-12-21 2013-12-16 Method for manufacturing a nanolithography mask SG11201504292QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1262610A FR3000235B1 (fr) 2012-12-21 2012-12-21 Procede de fabrication de masques nanolithographiques
PCT/FR2013/053102 WO2014096662A1 (fr) 2012-12-21 2013-12-16 Procede de fabrication de masque de nanolithographie

Publications (1)

Publication Number Publication Date
SG11201504292QA true SG11201504292QA (en) 2015-07-30

Family

ID=48741226

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201504292QA SG11201504292QA (en) 2012-12-21 2013-12-16 Method for manufacturing a nanolithography mask

Country Status (9)

Country Link
US (1) US9599890B2 (zh)
EP (1) EP2936249A1 (zh)
JP (2) JP6324991B2 (zh)
KR (1) KR101709028B1 (zh)
CN (1) CN104885013B (zh)
FR (1) FR3000235B1 (zh)
SG (1) SG11201504292QA (zh)
TW (1) TWI557172B (zh)
WO (1) WO2014096662A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6023010B2 (ja) * 2013-06-26 2016-11-09 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
CN105446074B (zh) * 2014-08-22 2019-09-06 中芯国际集成电路制造(上海)有限公司 使用激光定向自组装嵌段共聚物的方法
TWI610392B (zh) * 2016-09-05 2018-01-01 Daxin Mat Corp 光電元件的製備方法
JP6860276B2 (ja) * 2016-09-09 2021-04-14 花王株式会社 樹脂マスク剥離用洗浄剤組成物
GB201804010D0 (en) * 2018-03-13 2018-04-25 Univ Kyoto Structured nanoporous materials, manufacture of structured nanoporous materials and applications of structured nanoporous materials
KR102724840B1 (ko) * 2019-08-29 2024-11-01 후지필름 가부시키가이샤 패턴 형성 방법, 전자 디바이스의 제조 방법
DE102020124247A1 (de) * 2019-10-31 2021-05-06 Taiwan Semiconductor Manufacturing Co., Ltd. Fotolackentwickler und verfahren zum entwickeln von fotolack
EP4073586B1 (en) * 2019-12-12 2023-12-20 Solvay Specialty Polymers Italy S.p.A. Method for removing fluoropolymer lift-off layer
WO2024150636A1 (ja) * 2023-01-10 2024-07-18 富士フイルム株式会社 処理液、処理液収容体
WO2024211250A1 (en) * 2023-04-05 2024-10-10 Entegris, Inc. Solvent systems for selective removal of polymeric materials

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3940546B2 (ja) * 1999-06-07 2007-07-04 株式会社東芝 パターン形成方法およびパターン形成材料
JP2004527905A (ja) 2001-03-14 2004-09-09 ユニバーシティー オブ マサチューセッツ ナノ製造
JP3798641B2 (ja) * 2001-03-23 2006-07-19 株式会社東芝 ナノパターン形成方法および電子部品の製造方法
US8993221B2 (en) * 2012-02-10 2015-03-31 Pixelligent Technologies, Llc Block co-polymer photoresist
US7071047B1 (en) * 2005-01-28 2006-07-04 International Business Machines Corporation Method of forming buried isolation regions in semiconductor substrates and semiconductor devices with buried isolation regions
US7407554B2 (en) * 2005-04-12 2008-08-05 International Business Machines Corporation Development or removal of block copolymer or PMMA-b-S-based resist using polar supercritical solvent
US8425982B2 (en) * 2008-03-21 2013-04-23 Micron Technology, Inc. Methods of improving long range order in self-assembly of block copolymer films with ionic liquids
KR101602942B1 (ko) * 2009-10-07 2016-03-15 삼성전자주식회사 패턴 형성 방법
WO2011094597A2 (en) * 2010-02-01 2011-08-04 The Regents Of The University Of California Graphene nanomesh and method of making the same
US9388268B2 (en) 2010-10-11 2016-07-12 Wisconsin Alumni Research Foundation Patternable polymer block brush layers
US9060415B2 (en) 2011-02-15 2015-06-16 Riken Method for producing substrate having surface nanostructure
JP5708521B2 (ja) * 2011-02-15 2015-04-30 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
CN104465523B (zh) * 2013-09-24 2017-08-25 中芯国际集成电路制造(北京)有限公司 闪存存储器的制造方法

Also Published As

Publication number Publication date
US20150331313A1 (en) 2015-11-19
FR3000235B1 (fr) 2016-06-24
TWI557172B (zh) 2016-11-11
US9599890B2 (en) 2017-03-21
TW201441292A (zh) 2014-11-01
WO2014096662A1 (fr) 2014-06-26
JP6324991B2 (ja) 2018-05-16
CN104885013B (zh) 2019-06-25
CN104885013A (zh) 2015-09-02
FR3000235A1 (fr) 2014-06-27
KR20150088799A (ko) 2015-08-03
JP2018117132A (ja) 2018-07-26
JP2016516288A (ja) 2016-06-02
EP2936249A1 (fr) 2015-10-28
KR101709028B1 (ko) 2017-02-21

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