SG11201406661YA - Method for manufacturing bonded wafer - Google Patents
Method for manufacturing bonded waferInfo
- Publication number
- SG11201406661YA SG11201406661YA SG11201406661YA SG11201406661YA SG11201406661YA SG 11201406661Y A SG11201406661Y A SG 11201406661YA SG 11201406661Y A SG11201406661Y A SG 11201406661YA SG 11201406661Y A SG11201406661Y A SG 11201406661YA SG 11201406661Y A SG11201406661Y A SG 11201406661YA
- Authority
- SG
- Singapore
- Prior art keywords
- bonded wafer
- manufacturing bonded
- manufacturing
- wafer
- bonded
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012101768A JP5664592B2 (ja) | 2012-04-26 | 2012-04-26 | 貼り合わせウェーハの製造方法 |
PCT/JP2013/002278 WO2013161188A1 (ja) | 2012-04-26 | 2013-04-02 | 貼り合わせウェーハの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201406661YA true SG11201406661YA (en) | 2014-11-27 |
Family
ID=49482543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201406661YA SG11201406661YA (en) | 2012-04-26 | 2013-04-02 | Method for manufacturing bonded wafer |
Country Status (7)
Country | Link |
---|---|
US (1) | US9142449B2 (ja) |
EP (1) | EP2843686B1 (ja) |
JP (1) | JP5664592B2 (ja) |
KR (1) | KR101855812B1 (ja) |
CN (1) | CN104246971B (ja) |
SG (1) | SG11201406661YA (ja) |
WO (1) | WO2013161188A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6213046B2 (ja) * | 2013-08-21 | 2017-10-18 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法 |
JP6638282B2 (ja) * | 2015-09-25 | 2020-01-29 | 三菱マテリアル株式会社 | 冷却器付き発光モジュールおよび冷却器付き発光モジュールの製造方法 |
US10269756B2 (en) | 2017-04-21 | 2019-04-23 | Invensas Bonding Technologies, Inc. | Die processing |
JP6686962B2 (ja) * | 2017-04-25 | 2020-04-22 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法 |
CN107633997B (zh) * | 2017-08-10 | 2019-01-29 | 长江存储科技有限责任公司 | 一种晶圆键合方法 |
US10727219B2 (en) | 2018-02-15 | 2020-07-28 | Invensas Bonding Technologies, Inc. | Techniques for processing devices |
CN109671664A (zh) * | 2018-12-14 | 2019-04-23 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 晶圆载片台 |
US11742314B2 (en) | 2020-03-31 | 2023-08-29 | Adeia Semiconductor Bonding Technologies Inc. | Reliable hybrid bonded apparatus |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56135934A (en) * | 1980-03-27 | 1981-10-23 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Dry etching device |
JP3134391B2 (ja) * | 1991-09-19 | 2001-02-13 | 株式会社デンソー | シリコン基板の接合方法 |
US6534380B1 (en) * | 1997-07-18 | 2003-03-18 | Denso Corporation | Semiconductor substrate and method of manufacturing the same |
US6335535B1 (en) * | 1998-06-26 | 2002-01-01 | Nissin Electric Co., Ltd | Method for implanting negative hydrogen ion and implanting apparatus |
EP2259299A1 (en) * | 1999-10-14 | 2010-12-08 | Shin-Etsu Handotai Co., Ltd. | Method for manufacturing SOI wafer, and SOI wafer |
JP3626933B2 (ja) | 2001-02-08 | 2005-03-09 | 東京エレクトロン株式会社 | 基板載置台の製造方法 |
US7176528B2 (en) * | 2003-02-18 | 2007-02-13 | Corning Incorporated | Glass-based SOI structures |
JP4509488B2 (ja) * | 2003-04-02 | 2010-07-21 | 株式会社Sumco | 貼り合わせ基板の製造方法 |
JP2006339363A (ja) | 2005-06-01 | 2006-12-14 | Bondtech Inc | 表面活性化方法および表面活性化装置 |
JP2007173354A (ja) | 2005-12-20 | 2007-07-05 | Shin Etsu Chem Co Ltd | Soi基板およびsoi基板の製造方法 |
US7791708B2 (en) * | 2006-12-27 | 2010-09-07 | Asml Netherlands B.V. | Lithographic apparatus, substrate table, and method for enhancing substrate release properties |
JP5433927B2 (ja) * | 2007-03-14 | 2014-03-05 | 株式会社Sumco | 貼り合わせウェーハの製造方法 |
JP5415676B2 (ja) * | 2007-05-30 | 2014-02-12 | 信越化学工業株式会社 | Soiウェーハの製造方法 |
JP4577382B2 (ja) | 2008-03-06 | 2010-11-10 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法 |
EP2200077B1 (en) * | 2008-12-22 | 2012-12-05 | Soitec | Method for bonding two substrates |
US8557679B2 (en) * | 2010-06-30 | 2013-10-15 | Corning Incorporated | Oxygen plasma conversion process for preparing a surface for bonding |
JP2012038963A (ja) | 2010-08-09 | 2012-02-23 | Sumco Corp | 貼り合わせウェーハの製造方法 |
-
2012
- 2012-04-26 JP JP2012101768A patent/JP5664592B2/ja active Active
-
2013
- 2013-04-02 WO PCT/JP2013/002278 patent/WO2013161188A1/ja active Application Filing
- 2013-04-02 US US14/391,086 patent/US9142449B2/en active Active
- 2013-04-02 KR KR1020147029823A patent/KR101855812B1/ko active IP Right Grant
- 2013-04-02 SG SG11201406661YA patent/SG11201406661YA/en unknown
- 2013-04-02 EP EP13781764.9A patent/EP2843686B1/en active Active
- 2013-04-02 CN CN201380021381.5A patent/CN104246971B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN104246971B (zh) | 2018-06-15 |
US9142449B2 (en) | 2015-09-22 |
CN104246971A (zh) | 2014-12-24 |
JP5664592B2 (ja) | 2015-02-04 |
KR101855812B1 (ko) | 2018-05-10 |
JP2013229516A (ja) | 2013-11-07 |
WO2013161188A1 (ja) | 2013-10-31 |
EP2843686A1 (en) | 2015-03-04 |
EP2843686A4 (en) | 2016-01-20 |
EP2843686B1 (en) | 2019-03-27 |
KR20150003763A (ko) | 2015-01-09 |
US20150118825A1 (en) | 2015-04-30 |
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