SG11201405685RA - Resistance change memory device - Google Patents

Resistance change memory device

Info

Publication number
SG11201405685RA
SG11201405685RA SG11201405685RA SG11201405685RA SG11201405685RA SG 11201405685R A SG11201405685R A SG 11201405685RA SG 11201405685R A SG11201405685R A SG 11201405685RA SG 11201405685R A SG11201405685R A SG 11201405685RA SG 11201405685R A SG11201405685R A SG 11201405685RA
Authority
SG
Singapore
Prior art keywords
memory device
resistance change
change memory
resistance
memory
Prior art date
Application number
SG11201405685RA
Other languages
English (en)
Inventor
Kuniyuki Kakushima
Chunmeng Dou
Parhat Ahmet
Hiroshi Iwai
Yoshinori Kataoka
Original Assignee
Tokyo Inst Tech
Toshiba Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Inst Tech, Toshiba Materials Co Ltd filed Critical Tokyo Inst Tech
Publication of SG11201405685RA publication Critical patent/SG11201405685RA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/028—Formation of switching materials, e.g. deposition of layers by conversion of electrode material, e.g. oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
SG11201405685RA 2012-03-14 2013-03-12 Resistance change memory device SG11201405685RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012057871 2012-03-14
PCT/JP2013/056826 WO2013137262A1 (ja) 2012-03-14 2013-03-12 抵抗変化型記憶装置

Publications (1)

Publication Number Publication Date
SG11201405685RA true SG11201405685RA (en) 2014-11-27

Family

ID=49161168

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201405685RA SG11201405685RA (en) 2012-03-14 2013-03-12 Resistance change memory device

Country Status (8)

Country Link
US (1) US9214626B2 (ja)
EP (1) EP2827367B1 (ja)
JP (1) JP6082383B2 (ja)
KR (1) KR101613033B1 (ja)
CN (1) CN104285295B (ja)
HK (1) HK1205822A1 (ja)
SG (1) SG11201405685RA (ja)
WO (1) WO2013137262A1 (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013137262A1 (ja) * 2012-03-14 2013-09-19 国立大学法人東京工業大学 抵抗変化型記憶装置
KR101585477B1 (ko) 2014-09-26 2016-01-15 현대자동차주식회사 방청성능이 향상된 차량용 도어프레임 및 이의 제조방법
TWI556245B (zh) * 2015-02-16 2016-11-01 國立中山大學 電阻式記憶體
JP6430306B2 (ja) * 2015-03-19 2018-11-28 東芝メモリ株式会社 不揮発性記憶装置
TWI559305B (zh) * 2015-08-07 2016-11-21 Univ Chang Gung Resistive memory with multiple resistive states
CN106098932B (zh) * 2016-06-16 2019-01-15 北京大学 一种线性缓变忆阻器及其制备方法
US9887351B1 (en) * 2016-09-30 2018-02-06 International Business Machines Corporation Multivalent oxide cap for analog switching resistive memory
JP6541727B2 (ja) * 2017-07-24 2019-07-10 カルソニックカンセイ株式会社 接合方法
JP2019057540A (ja) * 2017-09-19 2019-04-11 東芝メモリ株式会社 記憶素子
US10381558B1 (en) * 2018-03-16 2019-08-13 4D-S, Ltd. Resistive memory device having a retention layer
US10910559B2 (en) 2018-06-01 2021-02-02 Massachusetts Institute Of Technology Optoelectronic memristor devices including one or more solid electrolytes with electrically controllable optical properties
JP7155752B2 (ja) * 2018-08-24 2022-10-19 富士通株式会社 抵抗変化素子及びその製造方法、記憶装置
US11616195B2 (en) * 2019-06-12 2023-03-28 Applied Materials, Inc. Dual oxide analog switch for neuromorphic switching

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005285451A (ja) 2004-03-29 2005-10-13 Sumitomo Electric Ind Ltd 電解質膜およびその製造方法
WO2007013174A1 (ja) 2005-07-29 2007-02-01 Fujitsu Limited 抵抗記憶素子及び不揮発性半導体記憶装置
WO2008075412A1 (ja) * 2006-12-19 2008-06-26 Fujitsu Limited 抵抗変化素子及びその製造方法
CN101159314A (zh) 2007-10-30 2008-04-09 北京大学 一种电阻式随机存储器的存储单元及其制备方法
JP5476686B2 (ja) 2008-07-24 2014-04-23 富士通株式会社 抵抗変化型素子および抵抗変化型素子製造方法
JP5464148B2 (ja) * 2008-12-26 2014-04-09 日本電気株式会社 抵抗変化素子
JP2010251352A (ja) * 2009-04-10 2010-11-04 Panasonic Corp 不揮発性記憶素子及びその製造方法
JP5659480B2 (ja) 2009-10-26 2015-01-28 ソニー株式会社 記憶装置の製造方法
WO2011052239A1 (ja) 2009-11-02 2011-05-05 パナソニック株式会社 抵抗変化型不揮発性記憶装置およびメモリセルの形成方法
JP2011146111A (ja) 2010-01-18 2011-07-28 Toshiba Corp 不揮発性記憶装置及びその製造方法
CN102576709B (zh) 2010-08-17 2015-03-04 松下电器产业株式会社 非易失性存储装置及其制造方法
WO2013137262A1 (ja) * 2012-03-14 2013-09-19 国立大学法人東京工業大学 抵抗変化型記憶装置

Also Published As

Publication number Publication date
EP2827367A4 (en) 2015-11-25
EP2827367A1 (en) 2015-01-21
WO2013137262A1 (ja) 2013-09-19
KR101613033B1 (ko) 2016-04-15
US20150083987A1 (en) 2015-03-26
US9214626B2 (en) 2015-12-15
HK1205822A1 (en) 2015-12-24
JP6082383B2 (ja) 2017-02-15
JPWO2013137262A1 (ja) 2015-08-03
CN104285295B (zh) 2017-05-31
CN104285295A (zh) 2015-01-14
EP2827367B1 (en) 2018-04-25
KR20140129170A (ko) 2014-11-06

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