SG11201403552SA - Polishing composition - Google Patents

Polishing composition

Info

Publication number
SG11201403552SA
SG11201403552SA SG11201403552SA SG11201403552SA SG11201403552SA SG 11201403552S A SG11201403552S A SG 11201403552SA SG 11201403552S A SG11201403552S A SG 11201403552SA SG 11201403552S A SG11201403552S A SG 11201403552SA SG 11201403552S A SG11201403552S A SG 11201403552SA
Authority
SG
Singapore
Prior art keywords
polishing composition
polishing
composition
Prior art date
Application number
SG11201403552SA
Other languages
English (en)
Inventor
Shuugo Yokota
Yoshihiro Kachi
Tomohiko Akatsuka
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of SG11201403552SA publication Critical patent/SG11201403552SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
SG11201403552SA 2011-12-28 2012-12-25 Polishing composition SG11201403552SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011287264A JP2013138053A (ja) 2011-12-28 2011-12-28 研磨用組成物
PCT/JP2012/083472 WO2013099866A1 (ja) 2011-12-28 2012-12-25 研磨用組成物

Publications (1)

Publication Number Publication Date
SG11201403552SA true SG11201403552SA (en) 2014-10-30

Family

ID=48697351

Family Applications (3)

Application Number Title Priority Date Filing Date
SG11201403552SA SG11201403552SA (en) 2011-12-28 2012-12-25 Polishing composition
SG10202010470RA SG10202010470RA (en) 2011-12-28 2012-12-25 Polishing Composition
SG10201604608QA SG10201604608QA (en) 2011-12-28 2012-12-25 Polishing Composition

Family Applications After (2)

Application Number Title Priority Date Filing Date
SG10202010470RA SG10202010470RA (en) 2011-12-28 2012-12-25 Polishing Composition
SG10201604608QA SG10201604608QA (en) 2011-12-28 2012-12-25 Polishing Composition

Country Status (8)

Country Link
US (1) US20140349484A1 (zh)
EP (1) EP2800124A4 (zh)
JP (1) JP2013138053A (zh)
KR (1) KR20140108563A (zh)
CN (1) CN104025265B (zh)
SG (3) SG11201403552SA (zh)
TW (1) TWI576415B (zh)
WO (1) WO2013099866A1 (zh)

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* Cited by examiner, † Cited by third party
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JP5695367B2 (ja) 2010-08-23 2015-04-01 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
EP2997103B1 (en) * 2013-05-15 2019-03-06 Basf Se Use of chemical-mechanical polishing compositions comprising n,n,n',n'-tetrakis-(2-hydroxypropyl)-ethylenediamine and process
WO2015004567A2 (en) * 2013-07-11 2015-01-15 Basf Se Chemical-mechanical polishing composition comprising benzotriazole derivatives as corrosion inhibitors
JP2015086355A (ja) * 2013-09-27 2015-05-07 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法、及び基板の製造方法
JP6366308B2 (ja) * 2014-03-12 2018-08-01 株式会社ディスコ 加工方法
JP6385085B2 (ja) * 2014-03-14 2018-09-05 株式会社ディスコ バイト切削方法
WO2015140850A1 (ja) * 2014-03-20 2015-09-24 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
SG11201607359XA (en) 2014-03-20 2016-10-28 Fujimi Inc Polishing composition, polishing method, and method for producing substrate
JP2015189965A (ja) * 2014-03-31 2015-11-02 株式会社フジミインコーポレーテッド 研磨用組成物
US9401104B2 (en) 2014-05-05 2016-07-26 Cabot Microelectronics Corporation Polishing composition for edge roll-off improvement
JP6517555B2 (ja) * 2014-09-30 2019-05-22 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
JP2016069535A (ja) * 2014-09-30 2016-05-09 株式会社フジミインコーポレーテッド 研磨用組成物及びその製造方法並びに研磨方法
KR102604533B1 (ko) 2015-01-19 2023-11-22 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
KR102508676B1 (ko) 2015-01-19 2023-03-13 가부시키가이샤 후지미인코퍼레이티드 변성 콜로이달 실리카 및 그 제조 방법, 그리고 이것을 사용한 연마제
JP6797811B2 (ja) * 2015-09-30 2020-12-09 株式会社フジミインコーポレーテッド 研磨方法
KR101854510B1 (ko) 2015-12-11 2018-05-03 삼성에스디아이 주식회사 금속 배선 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법
US10647887B2 (en) 2018-01-08 2020-05-12 Cabot Microelectronics Corporation Tungsten buff polishing compositions with improved topography
KR20190106679A (ko) * 2018-03-07 2019-09-18 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
JP7141837B2 (ja) * 2018-03-23 2022-09-26 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法、および半導体基板の製造方法
US10815392B2 (en) * 2018-05-03 2020-10-27 Rohm and Haas Electronic CMP Holdings, Inc. Chemical mechanical polishing method for tungsten
JP7414437B2 (ja) 2019-09-13 2024-01-16 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法
TW202229478A (zh) * 2020-09-29 2022-08-01 日商福吉米股份有限公司 研磨用組成物及其製造方法、研磨方法以及基板的製造方法

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JPH0982668A (ja) * 1995-09-20 1997-03-28 Sony Corp 研磨用スラリー及びこの研磨用スラリーを用いる研磨方法
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JP2007207785A (ja) 2006-01-30 2007-08-16 Fujifilm Corp 金属研磨用組成物
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JP5695367B2 (ja) * 2010-08-23 2015-04-01 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法

Also Published As

Publication number Publication date
CN104025265B (zh) 2018-01-12
SG10202010470RA (en) 2020-11-27
TWI576415B (zh) 2017-04-01
WO2013099866A1 (ja) 2013-07-04
EP2800124A1 (en) 2014-11-05
JP2013138053A (ja) 2013-07-11
SG10201604608QA (en) 2016-07-28
CN104025265A (zh) 2014-09-03
TW201341515A (zh) 2013-10-16
US20140349484A1 (en) 2014-11-27
EP2800124A4 (en) 2015-08-12
KR20140108563A (ko) 2014-09-11

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