SG11201403362RA - Light-emitting diode and method of manufacturing the same - Google Patents

Light-emitting diode and method of manufacturing the same

Info

Publication number
SG11201403362RA
SG11201403362RA SG11201403362RA SG11201403362RA SG11201403362RA SG 11201403362R A SG11201403362R A SG 11201403362RA SG 11201403362R A SG11201403362R A SG 11201403362RA SG 11201403362R A SG11201403362R A SG 11201403362RA SG 11201403362R A SG11201403362R A SG 11201403362RA
Authority
SG
Singapore
Prior art keywords
manufacturing
light
same
emitting diode
diode
Prior art date
Application number
SG11201403362RA
Other languages
English (en)
Inventor
Noriyuki Aihara
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of SG11201403362RA publication Critical patent/SG11201403362RA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0016Processes relating to electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0025Processes relating to coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • H01L33/405Reflective materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
SG11201403362RA 2011-12-19 2012-12-18 Light-emitting diode and method of manufacturing the same SG11201403362RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011277536A JP5865695B2 (ja) 2011-12-19 2011-12-19 発光ダイオード及びその製造方法
PCT/JP2012/082790 WO2013094601A1 (ja) 2011-12-19 2012-12-18 発光ダイオード及びその製造方法

Publications (1)

Publication Number Publication Date
SG11201403362RA true SG11201403362RA (en) 2014-10-30

Family

ID=48668488

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201403362RA SG11201403362RA (en) 2011-12-19 2012-12-18 Light-emitting diode and method of manufacturing the same

Country Status (8)

Country Link
US (1) US9166110B2 (zh)
EP (1) EP2797126A4 (zh)
JP (1) JP5865695B2 (zh)
KR (1) KR101589855B1 (zh)
CN (1) CN103999246B (zh)
SG (1) SG11201403362RA (zh)
TW (1) TW201338206A (zh)
WO (1) WO2013094601A1 (zh)

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EP2111641B1 (en) 2007-01-22 2017-08-30 Cree, Inc. Illumination devices using externally interconnected arrays of light emitting devices, and method of fabricating same
US11792898B2 (en) 2012-07-01 2023-10-17 Ideal Industries Lighting Llc Enhanced fixtures for area lighting
US11160148B2 (en) 2017-06-13 2021-10-26 Ideal Industries Lighting Llc Adaptive area lamp
CN104377287B (zh) * 2013-08-14 2017-04-26 展晶科技(深圳)有限公司 发光二极管及其制造方法
CN104362240B (zh) * 2014-10-31 2017-10-20 广东德力光电有限公司 一种LED芯片的Al2O3/SiON钝化层结构及其生长方法
DE102015117662B4 (de) * 2015-10-16 2021-07-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
US10529696B2 (en) 2016-04-12 2020-01-07 Cree, Inc. High density pixelated LED and devices and methods thereof
CN105742433B (zh) * 2016-04-29 2018-03-02 厦门市三安光电科技有限公司 一种AlGaInP发光二极管
KR101995161B1 (ko) * 2017-02-23 2019-07-02 한국산업기술대학교산학협력단 조준경용 마이크로 발광다이오드 광원 및 이의 제조방법
CN111052387B (zh) 2017-08-03 2023-11-28 科锐Led公司 高密度像素化的led芯片和芯片阵列装置及制造方法
US10734363B2 (en) 2017-08-03 2020-08-04 Cree, Inc. High density pixelated-LED chips and chip array devices
US10529773B2 (en) 2018-02-14 2020-01-07 Cree, Inc. Solid state lighting devices with opposing emission directions
CN111937164B (zh) * 2018-04-06 2024-06-25 株式会社村田制作所 光半导体元件
CN111192944A (zh) * 2018-11-15 2020-05-22 日亚化学工业株式会社 发光装置的制造方法
US10903265B2 (en) 2018-12-21 2021-01-26 Cree, Inc. Pixelated-LED chips and chip array devices, and fabrication methods
US20220166191A1 (en) * 2019-03-12 2022-05-26 Sony Group Corporation Light emitting element and method for manufacturing the same
JP6858899B2 (ja) * 2019-03-26 2021-04-14 Dowaエレクトロニクス株式会社 点光源型発光ダイオード及びその製造方法
WO2020196411A1 (ja) * 2019-03-26 2020-10-01 Dowaエレクトロニクス株式会社 点光源型発光ダイオード及びその製造方法
US11817526B2 (en) 2019-10-29 2023-11-14 Creeled, Inc. Texturing for high density pixelated-LED chips and chip array devices
KR102560008B1 (ko) 2019-11-26 2023-07-25 티엔진 산안 옵토일렉트로닉스 컴퍼니 리미티드 적외선 발광다이오드
US11437548B2 (en) 2020-10-23 2022-09-06 Creeled, Inc. Pixelated-LED chips with inter-pixel underfill materials, and fabrication methods
EP4089746A1 (en) * 2021-05-11 2022-11-16 Excellence Opto. Inc. Vertical light-emitting diode structure with metal layer capable of testing and protecting sidewalls
JP2023115682A (ja) * 2022-02-08 2023-08-21 古河電気工業株式会社 半導体素子、半導体素子アレイ、およびウエハ
CN116314245B (zh) * 2023-05-10 2023-08-04 季华实验室 发光面板及其制作方法

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JP2783210B2 (ja) * 1995-09-04 1998-08-06 日本電気株式会社 面発光型ダイオード
GB2310316A (en) 1996-02-15 1997-08-20 Sharp Kk Semiconductor laser
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JP2007221029A (ja) * 2006-02-20 2007-08-30 Sony Corp 半導体発光素子およびその製造方法
KR100732191B1 (ko) 2006-04-21 2007-06-27 한국과학기술원 다층 반사기 구조의 고효율 발광다이오드 및 그의 제조방법
JP2008053476A (ja) * 2006-08-25 2008-03-06 Sanyo Electric Co Ltd 半導体チップおよびその製造方法
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KR20080089860A (ko) * 2007-04-02 2008-10-08 엘지이노텍 주식회사 반도체 발광소자 및 반도체 발광소자의 제조 방법
DE102008028886B4 (de) 2008-06-18 2024-02-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Bauelement und Verfahren zur Herstellung eines strahlungsemittierenden Bauelements
JP5024247B2 (ja) * 2008-09-12 2012-09-12 日立電線株式会社 発光素子
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KR101769075B1 (ko) * 2010-12-24 2017-08-18 서울바이오시스 주식회사 발광 다이오드 칩 및 그것을 제조하는 방법

Also Published As

Publication number Publication date
JP2013128072A (ja) 2013-06-27
EP2797126A1 (en) 2014-10-29
WO2013094601A1 (ja) 2013-06-27
EP2797126A4 (en) 2015-09-02
US9166110B2 (en) 2015-10-20
JP5865695B2 (ja) 2016-02-17
KR101589855B1 (ko) 2016-02-12
TW201338206A (zh) 2013-09-16
KR20140108550A (ko) 2014-09-11
US20140291612A1 (en) 2014-10-02
CN103999246B (zh) 2017-06-13
CN103999246A (zh) 2014-08-20

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