SG11201403059WA - Low dielectric photoimageable compositions and electronic devices made therefrom - Google Patents

Low dielectric photoimageable compositions and electronic devices made therefrom

Info

Publication number
SG11201403059WA
SG11201403059WA SG11201403059WA SG11201403059WA SG11201403059WA SG 11201403059W A SG11201403059W A SG 11201403059WA SG 11201403059W A SG11201403059W A SG 11201403059WA SG 11201403059W A SG11201403059W A SG 11201403059WA SG 11201403059W A SG11201403059W A SG 11201403059WA
Authority
SG
Singapore
Prior art keywords
electronic devices
low dielectric
made therefrom
devices made
photoimageable compositions
Prior art date
Application number
SG11201403059WA
Other languages
English (en)
Inventor
Ruzhi Zhang
Jihoon Kim
Bharatkumar K Patel
Elizabeth Wolfer
Original Assignee
Az Electronic Materials Luxembourg Sarl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Luxembourg Sarl filed Critical Az Electronic Materials Luxembourg Sarl
Publication of SG11201403059WA publication Critical patent/SG11201403059WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Formation Of Insulating Films (AREA)
SG11201403059WA 2012-02-09 2013-02-08 Low dielectric photoimageable compositions and electronic devices made therefrom SG11201403059WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/369,809 US8871425B2 (en) 2012-02-09 2012-02-09 Low dielectric photoimageable compositions and electronic devices made therefrom
PCT/IB2013/000170 WO2013117989A1 (fr) 2012-02-09 2013-02-08 Compositions photo-imageables à faible constante diélectrique et dispositifs électroniques fabriqués à partir de ceux-ci

Publications (1)

Publication Number Publication Date
SG11201403059WA true SG11201403059WA (en) 2014-07-30

Family

ID=47913498

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201403059WA SG11201403059WA (en) 2012-02-09 2013-02-08 Low dielectric photoimageable compositions and electronic devices made therefrom

Country Status (9)

Country Link
US (1) US8871425B2 (fr)
EP (1) EP2812399B1 (fr)
JP (1) JP5941559B2 (fr)
KR (1) KR101904582B1 (fr)
CN (1) CN104093784B (fr)
PH (1) PH12014501731B1 (fr)
SG (1) SG11201403059WA (fr)
TW (1) TWI544280B (fr)
WO (1) WO2013117989A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6213270B2 (ja) * 2014-01-31 2017-10-18 住友化学株式会社 Ｕｖ−ｌｅｄ用ポリシルセスキオキサン系封止材組成物及びそのための溶媒の使用
CN104282250B (zh) * 2014-10-24 2016-08-31 深圳市华星光电技术有限公司 Tft 中mis 结构设计的控制方法及系统
WO2016167892A1 (fr) 2015-04-13 2016-10-20 Honeywell International Inc. Formulations de polysiloxane et revêtements pour applications optoélectroniques
US10254650B2 (en) 2016-06-29 2019-04-09 Honeywell International Inc. Low temperature SC1 strippable oxysilane-containing coatings
EP3500648A1 (fr) 2016-08-22 2019-06-26 Merck Patent GmbH Mélange pour dispositifs optiques
US20210292644A1 (en) 2016-09-13 2021-09-23 Merck Patent Gmbh Light luminescent particle
US10544330B2 (en) * 2017-01-20 2020-01-28 Honeywell International Inc. Gap filling dielectric materials

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4442197A (en) 1982-01-11 1984-04-10 General Electric Company Photocurable compositions
ATE37242T1 (de) 1984-02-10 1988-09-15 Ciba Geigy Ag Verfahren zur herstellung einer schutzschicht oder einer reliefabbildung.
US4603101A (en) 1985-09-27 1986-07-29 General Electric Company Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
JPH06148895A (ja) 1992-11-06 1994-05-27 Toray Ind Inc 感光性樹脂組成物およびこれを用いたパターン形成方法
TW526390B (en) 1997-06-26 2003-04-01 Shinetsu Chemical Co Resist compositions
US5962067A (en) * 1997-09-09 1999-10-05 Lucent Technologies Inc. Method for coating an article with a ladder siloxane polymer and coated article
EP1197998A3 (fr) 2000-10-10 2005-12-21 Shipley Company LLC Agent porogène antireflet
TW594416B (en) * 2001-05-08 2004-06-21 Shipley Co Llc Photoimageable composition
JP2004165613A (ja) * 2002-06-03 2004-06-10 Shipley Co Llc 電子デバイスの製造
US7041748B2 (en) * 2003-01-08 2006-05-09 International Business Machines Corporation Patternable low dielectric constant materials and their use in ULSI interconnection
JP5102428B2 (ja) * 2003-11-25 2012-12-19 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 導波路組成物およびこれから形成された導波路
DE602005001341T2 (de) * 2004-04-14 2008-02-21 Rohm and Haas Electronic Materials, L.L.C., Marlborough Zusammensetzungen für Wellenleiter und daraus hergestellte Wellenleiter
JP4491283B2 (ja) * 2004-06-10 2010-06-30 信越化学工業株式会社 反射防止膜形成用組成物を用いたパターン形成方法
ATE491762T1 (de) * 2005-09-29 2011-01-15 Dow Corning Verfahren zum abtrennen von hochtemperaturfilmen und/oder vorrichtungen von metallsubstraten
US8013077B2 (en) * 2007-03-02 2011-09-06 Fujifilm Corporation Insulating film forming composition and production method of insulating film
US7754510B2 (en) 2007-04-02 2010-07-13 Xerox Corporation Phase-separated dielectric structure fabrication process
EP2071400A1 (fr) * 2007-11-12 2009-06-17 Rohm and Haas Electronic Materials LLC Compositions de revêtement destinées à être utilisées avec une résine photosensible
TWI384025B (zh) * 2009-04-27 2013-02-01 Ind Tech Res Inst 聚乙烯醇膜組成物及包含其之偏光板
US8196655B2 (en) * 2009-08-31 2012-06-12 Halliburton Energy Services, Inc. Selective placement of conformance treatments in multi-zone well completions
US8431670B2 (en) 2009-08-31 2013-04-30 International Business Machines Corporation Photo-patternable dielectric materials and formulations and methods of use
US8389663B2 (en) * 2009-10-08 2013-03-05 International Business Machines Corporation Photo-patternable dielectric materials curable to porous dielectric materials, formulations, precursors and methods of use thereof
JP2011154214A (ja) * 2010-01-27 2011-08-11 Jsr Corp ネガ型感放射線性組成物、硬化パターン形成方法及び硬化パターン
JP5544239B2 (ja) * 2010-07-29 2014-07-09 富士フイルム株式会社 重合性組成物
CN103443707A (zh) * 2011-03-30 2013-12-11 日本瑞翁株式会社 树脂组合物和半导体元件基板

Also Published As

Publication number Publication date
TWI544280B (zh) 2016-08-01
KR101904582B1 (ko) 2018-10-04
US20130209754A1 (en) 2013-08-15
WO2013117989A1 (fr) 2013-08-15
US8871425B2 (en) 2014-10-28
EP2812399A1 (fr) 2014-12-17
KR20140117391A (ko) 2014-10-07
CN104093784A (zh) 2014-10-08
EP2812399B1 (fr) 2016-04-20
PH12014501731A1 (en) 2014-11-17
PH12014501731B1 (en) 2014-11-17
JP5941559B2 (ja) 2016-06-29
JP2015508184A (ja) 2015-03-16
TW201341963A (zh) 2013-10-16
CN104093784B (zh) 2016-09-21

Similar Documents

Publication Publication Date Title
AP00340S1 (en) Electronic devices
EP2916440A4 (fr) Circuit électronique
GB2502305B (en) Electronic reading devices
EP2984950A4 (fr) Cigarette électronique et circuit associé
EP2579443A4 (fr) Circuit électronique
EP2539948A4 (fr) Composants électriques, ainsi que circuits comprenant ces composants
HK1210867A1 (en) Rotary-operation-type electronic component
EP2897138A4 (fr) Appareil à circuit électronique
EP2699065A4 (fr) Substrat de circuit
AP00380S1 (en) Electronic devices
SG11201403059WA (en) Low dielectric photoimageable compositions and electronic devices made therefrom
TWI563448B (en) Provision of applications on multiple electronic devices
AP00379S1 (en) Electronic devices
EP3010128A4 (fr) Circuit électronique
GB2519791B (en) Breaker circuit
EP2760121A4 (fr) Circuit électronique
EP2879148A4 (fr) Composant électronique à contact mobile
EP2829164A4 (fr) Dispositifs électroniques sans port
EP2824682A4 (fr) Composant électronique
EP3073281A4 (fr) Disjoncteur de circuit électronique
HUE053442T2 (hu) Villamos érintkezõ és villamos áramkör
EP2698911A4 (fr) Circuit électronique de puissance
EP2850657A4 (fr) Composition thermo-isolante et dispositifs électroniques assemblés avec celle-ci
GB201315950D0 (en) Circuit breaker
GB2505255B (en) Spur reduction circuit