SG11201402877YA - Deposition system having a reaction chamber configured for in situ metrology and related method - Google Patents
Deposition system having a reaction chamber configured for in situ metrology and related methodInfo
- Publication number
- SG11201402877YA SG11201402877YA SG11201402877YA SG11201402877YA SG11201402877YA SG 11201402877Y A SG11201402877Y A SG 11201402877YA SG 11201402877Y A SG11201402877Y A SG 11201402877YA SG 11201402877Y A SG11201402877Y A SG 11201402877YA SG 11201402877Y A SG11201402877Y A SG 11201402877YA
- Authority
- SG
- Singapore
- Prior art keywords
- reaction chamber
- deposition system
- chamber configured
- related method
- situ metrology
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title 1
- 238000011065 in-situ storage Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/327,302 US20130052333A1 (en) | 2011-08-22 | 2011-12-15 | Deposition systems having reaction chambers configured for in-situ metrology and related methods |
FR1162463A FR2984923B1 (fr) | 2011-12-27 | 2011-12-27 | Systèmes de dépôt comprenant des chambres de réaction configurées pour réaliser des opérations de métrologie in situ et procédés connexes |
PCT/IB2012/002388 WO2013088213A1 (en) | 2011-12-15 | 2012-11-12 | Deposition system having a reaction chamber configured for in situ metrology and related method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201402877YA true SG11201402877YA (en) | 2014-07-30 |
Family
ID=45815784
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201402877YA SG11201402877YA (en) | 2011-12-15 | 2012-11-12 | Deposition system having a reaction chamber configured for in situ metrology and related method |
Country Status (8)
Country | Link |
---|---|
JP (1) | JP6133888B2 (zh) |
KR (1) | KR20140103291A (zh) |
CN (1) | CN103987877B (zh) |
DE (1) | DE112012005276T5 (zh) |
FR (1) | FR2984923B1 (zh) |
SG (1) | SG11201402877YA (zh) |
TW (1) | TWI570285B (zh) |
WO (1) | WO2013088213A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9812342B2 (en) * | 2015-12-08 | 2017-11-07 | Watlow Electric Manufacturing Company | Reduced wire count heater array block |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01268120A (ja) * | 1988-04-20 | 1989-10-25 | Fujitsu Ltd | 半導体装置用ウェハの温度測定方法 |
GB2238868A (en) * | 1989-11-22 | 1991-06-12 | Res Corp Technologies Inc | Silicon wafer temperature measurement by optical transmission monitoring. |
JP3058658B2 (ja) * | 1990-06-21 | 2000-07-04 | 国際電気株式会社 | 半導体製造装置 |
JPH062147A (ja) * | 1992-06-16 | 1994-01-11 | Babcock Hitachi Kk | 気相化学反応装置 |
JP2884556B2 (ja) * | 1994-06-10 | 1999-04-19 | 信越石英株式会社 | 枚葉式ウェーハ熱処理装置 |
JPH0897167A (ja) * | 1994-09-28 | 1996-04-12 | Tokyo Electron Ltd | 処理装置及び熱処理装置 |
JP3011866B2 (ja) * | 1994-11-30 | 2000-02-21 | 信越石英株式会社 | 枚葉式ウエーハ熱処理装置 |
JP3218164B2 (ja) * | 1995-05-31 | 2001-10-15 | 東京エレクトロン株式会社 | 被処理体の支持ボート、熱処理装置及び熱処理方法 |
JP3551609B2 (ja) * | 1996-02-23 | 2004-08-11 | 東京エレクトロン株式会社 | 熱処理装置 |
WO1999049101A1 (en) * | 1998-03-23 | 1999-09-30 | Mattson Technology, Inc. | Apparatus and method for cvd and thermal processing of semiconductor substrates |
US6179913B1 (en) | 1999-04-16 | 2001-01-30 | Cbl Technologies, Inc. | Compound gas injection system and methods |
WO2005017988A1 (ja) * | 2003-08-15 | 2005-02-24 | Hitachi Kokusai Electric Inc. | 基板処理装置および半導体デバイスの製造方法 |
JP2007005399A (ja) * | 2005-06-21 | 2007-01-11 | Hitachi Kokusai Electric Inc | 基板処理装置 |
KR101330156B1 (ko) * | 2006-11-22 | 2013-12-20 | 소이텍 | 삼염화 갈륨 주입 구조 |
US8382898B2 (en) | 2006-11-22 | 2013-02-26 | Soitec | Methods for high volume manufacture of group III-V semiconductor materials |
CN101911253B (zh) * | 2008-01-31 | 2012-08-22 | 应用材料公司 | 闭环mocvd沉积控制 |
WO2009108221A2 (en) * | 2008-02-27 | 2009-09-03 | S.O.I.Tec Silicon On Insulator Technologies | Thermalization of gaseous precursors in cvd reactors |
CN102047387B (zh) * | 2008-06-30 | 2012-07-04 | S.O.I.Tec绝缘体上硅技术公司 | 模块化的cvd反应器子系统、其配置方法和独立功能模块 |
KR101324303B1 (ko) * | 2008-08-28 | 2013-10-30 | 소이텍 | 클로라이드 가스 흐름의 uv 흡수기반의 모니터 및 제어 |
-
2011
- 2011-12-27 FR FR1162463A patent/FR2984923B1/fr not_active Expired - Fee Related
-
2012
- 2012-11-07 TW TW101141375A patent/TWI570285B/zh not_active IP Right Cessation
- 2012-11-12 CN CN201280061724.6A patent/CN103987877B/zh not_active Expired - Fee Related
- 2012-11-12 KR KR1020147017180A patent/KR20140103291A/ko not_active Application Discontinuation
- 2012-11-12 SG SG11201402877YA patent/SG11201402877YA/en unknown
- 2012-11-12 WO PCT/IB2012/002388 patent/WO2013088213A1/en active Application Filing
- 2012-11-12 DE DE112012005276.5T patent/DE112012005276T5/de not_active Withdrawn
- 2012-11-12 JP JP2014546661A patent/JP6133888B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2013088213A1 (en) | 2013-06-20 |
KR20140103291A (ko) | 2014-08-26 |
TWI570285B (zh) | 2017-02-11 |
JP6133888B2 (ja) | 2017-05-24 |
DE112012005276T5 (de) | 2014-10-09 |
TW201323670A (zh) | 2013-06-16 |
FR2984923B1 (fr) | 2014-11-07 |
CN103987877A (zh) | 2014-08-13 |
FR2984923A1 (fr) | 2013-06-28 |
JP2015502055A (ja) | 2015-01-19 |
CN103987877B (zh) | 2016-08-17 |
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