SG11201400767WA - Methods of continuously wet etching a patterned substrate - Google Patents
Methods of continuously wet etching a patterned substrateInfo
- Publication number
- SG11201400767WA SG11201400767WA SG11201400767WA SG11201400767WA SG11201400767WA SG 11201400767W A SG11201400767W A SG 11201400767WA SG 11201400767W A SG11201400767W A SG 11201400767WA SG 11201400767W A SG11201400767W A SG 11201400767WA SG 11201400767W A SG11201400767W A SG 11201400767WA
- Authority
- SG
- Singapore
- Prior art keywords
- methods
- wet etching
- patterned substrate
- continuously wet
- continuously
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/02—Treatment of water, waste water, or sewage by heating
- C02F1/04—Treatment of water, waste water, or sewage by heating by distillation or evaporation
- C02F1/10—Treatment of water, waste water, or sewage by heating by distillation or evaporation by direct contact with a particulate solid or with a fluid, as a heat transfer medium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/46—Regeneration of etching compositions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/068—Apparatus for etching printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/15—Position of the PCB during processing
- H05K2203/1545—Continuous processing, i.e. involving rolls moving a band-like or solid carrier along a continuous production path
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Hydrology & Water Resources (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Water Supply & Treatment (AREA)
- Environmental & Geological Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161541553P | 2011-09-30 | 2011-09-30 | |
PCT/US2012/055997 WO2013048834A1 (en) | 2011-09-30 | 2012-09-19 | Methods of continuously wet etching a patterned substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201400767WA true SG11201400767WA (en) | 2014-04-28 |
Family
ID=46982953
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201400767WA SG11201400767WA (en) | 2011-09-30 | 2012-09-19 | Methods of continuously wet etching a patterned substrate |
Country Status (8)
Country | Link |
---|---|
US (1) | US9301397B2 (zh) |
EP (1) | EP2761059A1 (zh) |
KR (1) | KR101999871B1 (zh) |
CN (1) | CN103842553B (zh) |
BR (1) | BR112014007582A2 (zh) |
SG (1) | SG11201400767WA (zh) |
TW (1) | TWI560765B (zh) |
WO (1) | WO2013048834A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI611490B (zh) * | 2017-01-20 | 2018-01-11 | 濕式蝕刻處理系統及蝕刻速率變化之偵測方法 | |
CN112271135B (zh) * | 2020-09-25 | 2023-02-28 | 华东光电集成器件研究所 | 一种晶圆级Au金属膜层湿法腐蚀图形化的方法 |
CN113802119B (zh) * | 2021-08-31 | 2022-08-30 | 煤炭科学研究总院有限公司 | 通用的pdms柔性传感器高精度金属微电极制备工艺 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3287191A (en) | 1963-07-23 | 1966-11-22 | Photo Engravers Res Inc | Etching of printed circuit components |
US3340195A (en) | 1964-11-16 | 1967-09-05 | Photo Engravers Res Inc | Process of etching |
US3475242A (en) | 1966-12-19 | 1969-10-28 | Fmc Corp | Process and apparatus for controlling metal etching operation |
US3905827A (en) * | 1971-10-18 | 1975-09-16 | Chemcut Corp | Etchant rinse method |
GB1400510A (en) | 1972-07-26 | 1975-07-16 | Southern California Chem Co | Continuous redox process for dissolving copper |
US3844857A (en) | 1972-10-30 | 1974-10-29 | Fmc Corp | Automatic process of etching copper circuits with an aqueous ammoniacal solution containing a salt of a chloroxy acid |
NL7414149A (nl) | 1974-10-29 | 1976-05-04 | Leuven Res & Dev Vzw | Werkwijze voor het terugwinnen van zilver uit oplossingen. |
DE4015141A1 (de) | 1990-05-11 | 1991-11-14 | Lpw Anlagen Gmbh | Verfahren zum betreiben einer galvanotechnischen anlage |
CA2041062C (en) | 1991-02-14 | 2000-11-28 | D. Gregory Beckett | Demetallizing procedure |
US5221421A (en) * | 1992-03-25 | 1993-06-22 | Hewlett-Packard Company | Controlled etching process for forming fine-geometry circuit lines on a substrate |
DE19600857A1 (de) | 1996-01-12 | 1997-07-17 | Atotech Deutschland Gmbh | Verfahren zur Dosierung von Prozeßbädern |
US8092707B2 (en) * | 1997-04-30 | 2012-01-10 | 3M Innovative Properties Company | Compositions and methods for modifying a surface suited for semiconductor fabrication |
US6150279A (en) | 1998-06-23 | 2000-11-21 | Ku; Amy | Reverse current gold etch |
US6841084B2 (en) | 2002-02-11 | 2005-01-11 | Nikko Materials Usa, Inc. | Etching solution for forming an embedded resistor |
JP4098669B2 (ja) | 2003-05-27 | 2008-06-11 | 日本パーカライジング株式会社 | りん酸塩化成処理液の回収再利用方法 |
EP1834011A2 (en) * | 2004-12-06 | 2007-09-19 | Koninklijke Philips Electronics N.V. | Etchant solutions and additives therefor |
ATE482303T1 (de) * | 2005-10-25 | 2010-10-15 | Atotech Deutschland Gmbh | Zusammensetzung und verfahren zur haftfähigkeitsverbesserung der polymerischen materialien auf kupfer- oder kupferlegierungsoberflächen |
US7677198B2 (en) * | 2005-11-28 | 2010-03-16 | Industrial Technology Research Institute | Method and apparatus for growing a composite metal sulphide photocatalyst thin film |
US20070269750A1 (en) * | 2006-05-19 | 2007-11-22 | Eastman Kodak Company | Colored masking for forming transparent structures |
JP2009210972A (ja) * | 2008-03-06 | 2009-09-17 | Jsr Corp | 転写フィルムおよびパターンの形成方法 |
JP6128847B2 (ja) | 2009-06-25 | 2017-05-17 | スリーエム イノベイティブ プロパティズ カンパニー | 自己組織化単層パターン化基材の湿式エッチング方法、及び金属パターン化物品 |
-
2012
- 2012-09-19 US US14/238,781 patent/US9301397B2/en not_active Expired - Fee Related
- 2012-09-19 BR BR112014007582A patent/BR112014007582A2/pt not_active IP Right Cessation
- 2012-09-19 EP EP12769559.1A patent/EP2761059A1/en not_active Withdrawn
- 2012-09-19 KR KR1020147011348A patent/KR101999871B1/ko active IP Right Grant
- 2012-09-19 WO PCT/US2012/055997 patent/WO2013048834A1/en active Application Filing
- 2012-09-19 CN CN201280048262.4A patent/CN103842553B/zh not_active Expired - Fee Related
- 2012-09-19 SG SG11201400767WA patent/SG11201400767WA/en unknown
- 2012-09-28 TW TW101136052A patent/TWI560765B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW201320180A (zh) | 2013-05-16 |
EP2761059A1 (en) | 2014-08-06 |
US20140231381A1 (en) | 2014-08-21 |
KR101999871B1 (ko) | 2019-10-01 |
BR112014007582A2 (pt) | 2017-04-11 |
WO2013048834A1 (en) | 2013-04-04 |
TWI560765B (en) | 2016-12-01 |
KR20140074364A (ko) | 2014-06-17 |
US9301397B2 (en) | 2016-03-29 |
CN103842553A (zh) | 2014-06-04 |
CN103842553B (zh) | 2016-04-27 |
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