SG110121A1 - Method for exposing a substrate and lithographic projection apparatus - Google Patents

Method for exposing a substrate and lithographic projection apparatus

Info

Publication number
SG110121A1
SG110121A1 SG200404944A SG200404944A SG110121A1 SG 110121 A1 SG110121 A1 SG 110121A1 SG 200404944 A SG200404944 A SG 200404944A SG 200404944 A SG200404944 A SG 200404944A SG 110121 A1 SG110121 A1 SG 110121A1
Authority
SG
Singapore
Prior art keywords
exposing
substrate
projection apparatus
lithographic projection
lithographic
Prior art date
Application number
SG200404944A
Other languages
English (en)
Inventor
Jozef Maria Finders
Judocus Marie Dom Stoeldraijer
Klerk Johannes Wilhelmus De
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG110121A1 publication Critical patent/SG110121A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G03F7/70333—Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG200404944A 2003-09-10 2004-09-06 Method for exposing a substrate and lithographic projection apparatus SG110121A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03255648 2003-09-10

Publications (1)

Publication Number Publication Date
SG110121A1 true SG110121A1 (en) 2005-04-28

Family

ID=34400573

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200404944A SG110121A1 (en) 2003-09-10 2004-09-06 Method for exposing a substrate and lithographic projection apparatus

Country Status (6)

Country Link
US (3) US7655368B2 (zh)
JP (3) JP2005086212A (zh)
KR (1) KR100674701B1 (zh)
CN (1) CN1595300B (zh)
SG (1) SG110121A1 (zh)
TW (1) TWI266963B (zh)

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US8031926B2 (en) * 2004-05-20 2011-10-04 Board Of Regents Of The Nevada System Of Higher Education, On Behalf Of The University Of Nevada, Reno Discrete event distribution sampling apparatus and methods
US7230675B2 (en) * 2004-12-02 2007-06-12 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured therewith
US8675176B2 (en) * 2005-02-25 2014-03-18 Asml Netherlands B.V. Parameter control in a lithographic apparatus using polarization
CN100573317C (zh) * 2005-03-29 2009-12-23 中国科学院光电技术研究所 连续面形掩模移动光刻曝光装置
US7382438B2 (en) * 2005-08-23 2008-06-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7723014B2 (en) * 2005-10-26 2010-05-25 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for photolithography in semiconductor manufacturing
US7767570B2 (en) * 2006-03-22 2010-08-03 Taiwan Semiconductor Manufacturing Company, Ltd. Dummy vias for damascene process
KR100989130B1 (ko) * 2008-08-19 2010-10-20 삼성모바일디스플레이주식회사 레이저 조사 장치 및 그를 이용한 유기전계발광표시장치의 제조 방법
US8178280B2 (en) * 2010-02-05 2012-05-15 Taiwan Semiconductor Manufacturing Company, Ltd. Self-contained proximity effect correction inspiration for advanced lithography (special)
CN102193321B (zh) * 2010-03-05 2013-10-30 上海微电子装备有限公司 工件台的垂向控制方法及其控制回路
US8572518B2 (en) * 2011-06-23 2013-10-29 Nikon Precision Inc. Predicting pattern critical dimensions in a lithographic exposure process
CN105008997B (zh) * 2013-02-25 2017-03-08 Asml荷兰有限公司 离散源掩模优化
US8856698B1 (en) * 2013-03-15 2014-10-07 Globalfoundries Inc. Method and apparatus for providing metric relating two or more process parameters to yield
CN106255925B (zh) 2014-05-02 2019-03-15 Asml荷兰有限公司 稠密特征的热点的减少
JP6719950B2 (ja) * 2016-04-15 2020-07-08 キヤノン株式会社 データ送信方法、プログラム、データ送信装置、リソグラフィ装置、及び物品の製造方法
CN106331682B (zh) * 2016-08-24 2018-05-11 同济大学 一种互动区域可调的增强现实云台系统
JP2019008478A (ja) * 2017-06-22 2019-01-17 キヤノン株式会社 画像処理装置及び方法、画像投影装置、印刷装置、及び画像印刷投影システム
JP7151131B2 (ja) * 2018-03-30 2022-10-12 ブラザー工業株式会社 通信装置と通信装置のためのコンピュータプログラム
WO2020114684A1 (en) * 2018-12-03 2020-06-11 Asml Netherlands B.V. Method of manufacturing devices
CN109870882A (zh) * 2019-03-29 2019-06-11 上海华虹宏力半导体制造有限公司 监控扫描式光刻机连续景深扩展程序功能的方法
CN115066657A (zh) * 2020-02-12 2022-09-16 Asml荷兰有限公司 用于控制制造过程的方法和关联设备
CN116500871B (zh) * 2023-06-26 2023-09-26 合肥晶合集成电路股份有限公司 一种光刻方法及系统

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JP3234891B2 (ja) * 1990-10-30 2001-12-04 株式会社ニコン 投影露光装置
JPH04204737A (ja) 1990-11-30 1992-07-27 Hitachi Ltd マスク及び投影露光装置並びにパタン形成方法
JPH0629182A (ja) 1992-05-15 1994-02-04 Nikon Corp 露光方法
US5333035A (en) * 1992-05-15 1994-07-26 Nikon Corporation Exposing method
JP3255312B2 (ja) * 1993-04-28 2002-02-12 株式会社ニコン 投影露光装置
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JPH11297602A (ja) 1998-04-14 1999-10-29 Sony Corp パターンの形成方法
JP2000077303A (ja) 1998-08-31 2000-03-14 Nec Corp パターン形成方法
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JP2001118784A (ja) 1999-10-21 2001-04-27 Nikon Corp 露光装置及びその露光装置における疎密線幅差の補正方法並びに露光方法
JP2001144009A (ja) * 1999-11-18 2001-05-25 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法
JP2001267197A (ja) * 2000-03-14 2001-09-28 Matsushita Electric Ind Co Ltd 微細パターンの形成方法およびフォトマスク
JP3631094B2 (ja) 2000-03-30 2005-03-23 キヤノン株式会社 投影露光装置及びデバイス製造方法
US6596444B2 (en) 2000-12-15 2003-07-22 Dupont Photomasks, Inc. Photomask and method for correcting feature size errors on the same
EP1248154A1 (en) 2001-04-04 2002-10-09 ASML Netherlands B.V. Lithographic manufacturing process and lithographic projection apparatus
TWI285299B (en) * 2001-04-04 2007-08-11 Asml Netherlands Bv Lithographic manufacturing process, lithographic projection apparatus, and device manufactured thereby
JP2003100591A (ja) * 2001-09-21 2003-04-04 Nikon Corp 荷電粒子線露光装置における露光方法、半導体デバイスの製造方法及び荷電粒子線露光装置
JP3938694B2 (ja) 2002-01-17 2007-06-27 Ｎｅｃエレクトロニクス株式会社 パターン形成方法
US6800403B2 (en) 2002-06-18 2004-10-05 Koninklijke Philips Electronics N.V. Techniques to characterize iso-dense effects for microdevice manufacture
US7042550B2 (en) * 2002-11-28 2006-05-09 Asml Netherlands B.V. Device manufacturing method and computer program
KR20050077167A (ko) * 2004-01-27 2005-08-01 삼성전자주식회사 멀티 시뮬레이션 모델을 이용한 광 근접 보정을 통한마스크 레이아웃 보정 방법

Also Published As

Publication number Publication date
JP2005086212A (ja) 2005-03-31
KR20050026887A (ko) 2005-03-16
CN1595300A (zh) 2005-03-16
US7670731B2 (en) 2010-03-02
US20050100831A1 (en) 2005-05-12
KR100674701B1 (ko) 2007-01-25
TW200515106A (en) 2005-05-01
US7732110B2 (en) 2010-06-08
JP2009065204A (ja) 2009-03-26
US20070099100A1 (en) 2007-05-03
TWI266963B (en) 2006-11-21
CN1595300B (zh) 2010-11-17
US20090190115A1 (en) 2009-07-30
JP2009094531A (ja) 2009-04-30
US7655368B2 (en) 2010-02-02

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