SG10202000680TA - Etchant composition for silicon nitride layer - Google Patents

Etchant composition for silicon nitride layer

Info

Publication number
SG10202000680TA
SG10202000680TA SG10202000680TA SG10202000680TA SG10202000680TA SG 10202000680T A SG10202000680T A SG 10202000680TA SG 10202000680T A SG10202000680T A SG 10202000680TA SG 10202000680T A SG10202000680T A SG 10202000680TA SG 10202000680T A SG10202000680T A SG 10202000680TA
Authority
SG
Singapore
Prior art keywords
silicon nitride
nitride layer
etchant composition
etchant
composition
Prior art date
Application number
SG10202000680TA
Other languages
English (en)
Inventor
Jeong-Hwan Kim
Byoung-Mook Kim
Tae-Hee Kim
Seong-Woong Yoon
Dong-Gyu Lee
Seung-Yong Lee
Eun-Jung Lee
Myeong-Il Jeong
Kyeong-Muk Choi
Han-Young Choi
Original Assignee
Dongwoo Fine Chem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongwoo Fine Chem Co Ltd filed Critical Dongwoo Fine Chem Co Ltd
Publication of SG10202000680TA publication Critical patent/SG10202000680TA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
SG10202000680TA 2019-01-24 2020-01-23 Etchant composition for silicon nitride layer SG10202000680TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020190009299A KR102654224B1 (ko) 2019-01-24 2019-01-24 실리콘 질화막 식각액 조성물

Publications (1)

Publication Number Publication Date
SG10202000680TA true SG10202000680TA (en) 2020-08-28

Family

ID=71746266

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202000680TA SG10202000680TA (en) 2019-01-24 2020-01-23 Etchant composition for silicon nitride layer

Country Status (3)

Country Link
KR (1) KR102654224B1 (zh)
CN (1) CN111471462B (zh)
SG (1) SG10202000680TA (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111961472B (zh) * 2020-08-14 2022-06-21 上海新阳半导体材料股份有限公司 高选择比氮化硅蚀刻液、其制备方法及应用
KR20230029375A (ko) * 2021-08-24 2023-03-03 삼성에스디아이 주식회사 실리콘 질화막 식각용 조성물 및 이를 이용한 실리콘 질화막 식각 방법
KR20230030428A (ko) * 2021-08-25 2023-03-06 삼성에스디아이 주식회사 실리콘 질화막 식각용 조성물 및 이를 이용한 실리콘 질화막 식각 방법
CN115287069B (zh) * 2022-07-06 2023-06-09 湖北兴福电子材料股份有限公司 一种抑制二氧化硅蚀刻的无c蚀刻液

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050159011A1 (en) * 2004-01-21 2005-07-21 Thirumala Vani K. Selective etching silicon nitride
KR101097277B1 (ko) * 2009-10-07 2011-12-22 솔브레인 주식회사 습식 식각용 조성물
JP2012099550A (ja) * 2010-10-29 2012-05-24 Sanyo Chem Ind Ltd 窒化ケイ素用エッチング液
US9368647B2 (en) * 2011-10-18 2016-06-14 Samsung Electronics Co., Ltd. Compositions for etching
KR101782329B1 (ko) * 2011-10-18 2017-09-28 삼성전자주식회사 식각용 조성물 및 이를 이용하는 반도체 기억 소자의 형성 방법
KR101380487B1 (ko) * 2012-05-09 2014-04-01 오씨아이 주식회사 실리콘 질화막의 에칭 용액
KR102365046B1 (ko) * 2012-12-18 2022-02-21 솔브레인 주식회사 식각 조성물, 식각 방법 및 반도체 소자
US10269591B2 (en) * 2013-10-23 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method of selectively removing silicon nitride and single wafer etching apparatus thereof
US9868902B2 (en) * 2014-07-17 2018-01-16 Soulbrain Co., Ltd. Composition for etching
KR102415960B1 (ko) * 2016-02-05 2022-07-01 동우 화인켐 주식회사 실리콘 질화막 식각액 조성물 및 이를 이용하는 반도체 소자 및 tft 어레이 기판의 제조방법
US10167425B2 (en) * 2016-05-04 2019-01-01 Oci Company Ltd. Etching solution capable of suppressing particle appearance
KR102079043B1 (ko) * 2016-05-27 2020-02-20 오씨아이 주식회사 실리콘 질화막 식각 용액
KR102079041B1 (ko) 2016-07-04 2020-02-20 오씨아이 주식회사 실리콘 기판 식각 용액
TW201802231A (zh) * 2016-07-04 2018-01-16 Oci有限公司 氮化矽膜蝕刻溶液
KR102079042B1 (ko) * 2016-07-04 2020-02-20 오씨아이 주식회사 실리콘 기판 식각 용액
US10995269B2 (en) * 2016-11-24 2021-05-04 Samsung Electronics Co., Ltd. Etchant composition and method of fabricating integrated circuit device using the same
WO2018124705A1 (ko) * 2016-12-26 2018-07-05 솔브레인 주식회사 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법
KR20180106144A (ko) * 2017-03-17 2018-10-01 동우 화인켐 주식회사 질화막 식각 조성물 및 이를 이용한 패턴 형성 방법
KR101769349B1 (ko) 2017-04-06 2017-08-18 (주)제이씨아이 실리콘 질화막 식각용 조성물.
KR101828437B1 (ko) * 2017-04-06 2018-03-29 주식회사 디엔에스 실리콘 질화막 식각용 조성물.
KR102336865B1 (ko) * 2017-07-06 2021-12-09 오씨아이 주식회사 식각 조성물 및 이를 이용한 식각 방법
KR101932441B1 (ko) * 2018-03-23 2018-12-26 주식회사 제우스이엔피 실리콘질화막 식각액 조성물
KR102346832B1 (ko) 2018-05-23 2022-01-03 삼성에스디아이 주식회사 실리콘 질화막 식각용 조성물 및 이를 이용한 식각 방법

Also Published As

Publication number Publication date
KR102654224B1 (ko) 2024-04-04
CN111471462B (zh) 2022-03-25
CN111471462A (zh) 2020-07-31
KR20200092132A (ko) 2020-08-03

Similar Documents

Publication Publication Date Title
SG10202000680TA (en) Etchant composition for silicon nitride layer
SG11202110021PA (en) Silicon nitride etching liquid composition
SG11202001854VA (en) Compositions and methods for etching silicon nitride-containing substrates
SG11202103910PA (en) Silicon nitride etching composition and method
EP3253843A4 (en) Cmp composition for silicon nitride removal
EP3760581A4 (en) METHOD OF MANUFACTURING SILICON NITRIDE POWDER
IL283492A (en) Burn preparations
EP3636620A4 (en) SILICON CARBIDE CERAMIC
EP3686323A4 (en) GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE
EP3780069A4 (en) POLISHING COMPOSITION FOR GALLIUM COMPOUND SEMICONDUCTOR SUBSTRATE
IL260481B (en) Wet etching composition for substrate having sin layer and si layer and wet etching method using same
EP3986997A4 (en) CLEANING COMPOSITION FOR SEMICONDUCTOR SUBSTRATES
EP3793618A4 (en) SILICON CONTAINING DETECTABLE COMPOUNDS
EP4032700A4 (en) METHOD FOR MANUFACTURING SILICON NITRIDE SUBSTRATE
IL288684A (en) Etching compounds
IL288608A (en) Etching compounds
EP3731260A4 (en) GROUP III SEMICONDUCTOR NITRIDE SUBSTRATE PRODUCTION PROCESS
EP3597797A4 (en) GROUP III SEMICONDUCTOR NITRIDE SUBSTRATE
EP4073847C0 (en) SEMICONDUCTOR LAYER STRUCTURE
SG11202107377VA (en) Methods for depositing silicon nitride
SG11201704225RA (en) Semiconductor wafer comprising a monocrystalline group-iiia nitride layer
SG11202112610WA (en) Methods of forming silicon nitride encapsulation layers
IL291119A (en) Etching compounds
IL287656A (en) Etching compounds
IL281436A (en) Etching mixes