SG10201806123RA - Method of manufacturing substrate for acoustic wave device - Google Patents
Method of manufacturing substrate for acoustic wave deviceInfo
- Publication number
- SG10201806123RA SG10201806123RA SG10201806123RA SG10201806123RA SG10201806123RA SG 10201806123R A SG10201806123R A SG 10201806123RA SG 10201806123R A SG10201806123R A SG 10201806123RA SG 10201806123R A SG10201806123R A SG 10201806123RA SG 10201806123R A SG10201806123R A SG 10201806123RA
- Authority
- SG
- Singapore
- Prior art keywords
- material layer
- piezoelectric material
- acoustic wave
- wave device
- removal amount
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000000463 material Substances 0.000 abstract 8
- 238000005498 polishing Methods 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/361—Removing material for deburring or mechanical trimming
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/66—Phase shifters
- H03H9/68—Phase shifters using surface acoustic waves
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
- H10N30/086—Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Acoustics & Sound (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Laser Beam Processing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017150237A JP2019029941A (ja) | 2017-08-02 | 2017-08-02 | 弾性波デバイス用基板の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201806123RA true SG10201806123RA (en) | 2019-03-28 |
Family
ID=65020126
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201806123RA SG10201806123RA (en) | 2017-08-02 | 2018-07-17 | Method of manufacturing substrate for acoustic wave device |
Country Status (7)
Country | Link |
---|---|
US (1) | US11165408B2 (zh) |
JP (1) | JP2019029941A (zh) |
KR (1) | KR20190014476A (zh) |
CN (1) | CN109391241A (zh) |
DE (1) | DE102018212493A1 (zh) |
SG (1) | SG10201806123RA (zh) |
TW (1) | TWI761547B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6654435B2 (ja) * | 2016-01-07 | 2020-02-26 | 株式会社ディスコ | ウエーハ生成方法 |
WO2020189115A1 (ja) * | 2019-03-15 | 2020-09-24 | 日本電気硝子株式会社 | 複合基板、電子デバイス、複合基板の製造方法及び電子デバイスの製造方法 |
WO2021246540A1 (ko) * | 2020-06-01 | 2021-12-09 | 엘지전자 주식회사 | 박막 특성 측정장치 |
TWI806615B (zh) * | 2022-05-19 | 2023-06-21 | 國立清華大學 | 濾波器及其製造方法 |
CN115229647B (zh) * | 2022-07-20 | 2023-08-29 | 华侨大学 | 一种飞秒激光辅助抛光金刚石的装置及其抛光方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5389196A (en) * | 1992-01-30 | 1995-02-14 | Massachusetts Institute Of Technology | Methods for fabricating three-dimensional micro structures |
JPH0927645A (ja) * | 1995-05-08 | 1997-01-28 | Matsushita Electric Ind Co Ltd | 複合基板の製造方法とそれを用いた圧電素子 |
JP3168961B2 (ja) * | 1997-10-06 | 2001-05-21 | 住友電気工業株式会社 | ダイヤモンド基板及びダイヤモンド基板の評価方法並びにダイヤモンド表面弾性波フィルタ |
FR2788176B1 (fr) | 1998-12-30 | 2001-05-25 | Thomson Csf | Dispositif a ondes acoustiques guidees dans une fine couche de materiau piezo-electrique collee par une colle moleculaire sur un substrat porteur et procede de fabrication |
JP4529262B2 (ja) * | 2000-09-14 | 2010-08-25 | ソニー株式会社 | 高周波モジュール装置及びその製造方法 |
JP4627269B2 (ja) * | 2006-02-24 | 2011-02-09 | 日本碍子株式会社 | 圧電薄膜デバイスの製造方法 |
JP5016876B2 (ja) * | 2006-09-06 | 2012-09-05 | 株式会社ディスコ | ビアホールの加工方法 |
US8288918B2 (en) * | 2008-12-24 | 2012-10-16 | Ngk Insulators, Ltd. | Composite substrate and manufacturing method thereof |
KR20110020741A (ko) * | 2009-08-24 | 2011-03-03 | 엔지케이 인슐레이터 엘티디 | 복합 기판의 제조 방법 |
JP6092535B2 (ja) * | 2012-07-04 | 2017-03-08 | 太陽誘電株式会社 | ラム波デバイスおよびその製造方法 |
WO2014104098A1 (ja) * | 2012-12-26 | 2014-07-03 | 日本碍子株式会社 | 複合基板、その製法及び弾性波デバイス |
JP6230422B2 (ja) * | 2014-01-15 | 2017-11-15 | 株式会社ディスコ | ウエーハの加工方法 |
JP6226774B2 (ja) | 2014-02-25 | 2017-11-08 | 日本碍子株式会社 | 複合基板の製法及び複合基板 |
JP6324796B2 (ja) * | 2014-04-21 | 2018-05-16 | 株式会社ディスコ | 単結晶基板の加工方法 |
JP2017005158A (ja) * | 2015-06-12 | 2017-01-05 | 株式会社ディスコ | ウエーハの裏面研削方法 |
JP2017046225A (ja) * | 2015-08-27 | 2017-03-02 | 株式会社ディスコ | Bawデバイス及びbawデバイスの製造方法 |
DE112016000125B4 (de) * | 2015-09-15 | 2020-06-25 | Ngk Insulators, Ltd. | Verbundwerkstoff-Substrat und Dicken-Tendenz-Schätzverfahren für ein piezoelektrisches Substrat |
WO2017047604A1 (ja) * | 2015-09-15 | 2017-03-23 | 日本碍子株式会社 | 複合基板の製造方法 |
-
2017
- 2017-08-02 JP JP2017150237A patent/JP2019029941A/ja active Pending
-
2018
- 2018-07-05 TW TW107123298A patent/TWI761547B/zh active
- 2018-07-17 SG SG10201806123RA patent/SG10201806123RA/en unknown
- 2018-07-23 US US16/042,097 patent/US11165408B2/en active Active
- 2018-07-26 DE DE102018212493.0A patent/DE102018212493A1/de active Pending
- 2018-07-31 KR KR1020180089092A patent/KR20190014476A/ko not_active Application Discontinuation
- 2018-08-01 CN CN201810865015.2A patent/CN109391241A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
KR20190014476A (ko) | 2019-02-12 |
TW201919336A (zh) | 2019-05-16 |
JP2019029941A (ja) | 2019-02-21 |
US20190044494A1 (en) | 2019-02-07 |
US11165408B2 (en) | 2021-11-02 |
TWI761547B (zh) | 2022-04-21 |
CN109391241A (zh) | 2019-02-26 |
DE102018212493A1 (de) | 2019-02-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10201806123RA (en) | Method of manufacturing substrate for acoustic wave device | |
SG131773A1 (en) | Method of dividing a non-metal substrate | |
MX2018000096A (es) | Metodos de manufactura de documentos de seguridad y dispositivos de seguridad. | |
CL2015003682A1 (es) | Procedimiento y dispositivo para la fabricación de una estructura superficial tridimensional de un útil de compresión. | |
SG10201804904YA (en) | Wafer producing apparatus | |
TW200717661A (en) | Method and apparatus for laser annealing | |
TW200705681A (en) | Image sensor package, optical glass used thereby, and processing method thereof | |
MY183580A (en) | Wafer production method | |
DE502006005061D1 (de) | Vorrichtung zum Bearbeiten eines band- oder plattenförmigen metallischen Werkstücks | |
MY172341A (en) | Semiconductor-processing pressure-sensitive adhesive tape | |
TWD174921S (zh) | 複合基板之部分 | |
SG11201810733PA (en) | Hybrid structure for surface acoustic wave device | |
SG11201805559YA (en) | Hybrid structure for a surface acoustic wave device | |
SG10201807751QA (en) | Wafer processing method | |
SG10201902671UA (en) | Wafer processing method | |
TW201412446A (zh) | 沿曲線切割非金屬材料之方法 | |
SG10201807747VA (en) | Wafer processing method | |
PH12015000103A1 (en) | Processing method for stacked substrate | |
SG154390A1 (en) | Wafer processing method for processing wafer having bumps formed thereon | |
JP6267505B2 (ja) | レーザダイシング方法 | |
SG10201807743WA (en) | Wafer processing method | |
JP6471491B2 (ja) | スクライブ方法 | |
JP2019087604A5 (zh) | ||
KR102345239B9 (ko) | 레이저를 이용한 박막 글라스 커팅 및 커팅면 형상 가공 방법 | |
RU2016108114A (ru) | Корпус устройства и способ его обработки, устройство |