SG11201805559YA - Hybrid structure for a surface acoustic wave device - Google Patents

Hybrid structure for a surface acoustic wave device

Info

Publication number
SG11201805559YA
SG11201805559YA SG11201805559YA SG11201805559YA SG11201805559YA SG 11201805559Y A SG11201805559Y A SG 11201805559YA SG 11201805559Y A SG11201805559Y A SG 11201805559YA SG 11201805559Y A SG11201805559Y A SG 11201805559YA SG 11201805559Y A SG11201805559Y A SG 11201805559YA
Authority
SG
Singapore
Prior art keywords
hybrid structure
wave device
acoustic wave
surface acoustic
layer
Prior art date
Application number
SG11201805559YA
Inventor
Oleg Kononchuk
Eric Butaud
Eric Desbonnets
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG11201805559YA publication Critical patent/SG11201805559YA/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/0004—Impedance-matching networks
    • H03H9/0009—Impedance-matching networks using surface acoustic wave devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02047—Treatment of substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8536—Alkaline earth metal based oxides, e.g. barium titanates

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

HYBRID STRUCTURE FOR A SURFACE ACOUSTIC WAVE DEVICE The invention relates to a hybrid structure (10) for a surface-acoustic-wave device comprising a useful layer (1) of piezoelectric material joined to a carrier 5 substrate (5) having a thermal expansion coefficient lower than that of the useful layer (1); the hybrid structure (10) comprises an intermediate layer (4) located between the useful layer (1) and the carrier substrate (5), the intermediate layer (4) being a 10 structured layer formed from at least two different materials comprising a plurality of periodic motifs (6, 7) in the plane of said intermediate layer (4). Figure 1 15
SG11201805559YA 2016-02-01 2017-01-17 Hybrid structure for a surface acoustic wave device SG11201805559YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1650774A FR3047355B1 (en) 2016-02-01 2016-02-01 HYBRID STRUCTURE FOR ACOUSTIC SURFACE WAVE DEVICE
PCT/FR2017/050092 WO2017134357A1 (en) 2016-02-01 2017-01-17 Hybrid structure for a surface-acoustic-wave device

Publications (1)

Publication Number Publication Date
SG11201805559YA true SG11201805559YA (en) 2018-07-30

Family

ID=56322018

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201805559YA SG11201805559YA (en) 2016-02-01 2017-01-17 Hybrid structure for a surface acoustic wave device
SG10201913102YA SG10201913102YA (en) 2016-02-01 2017-01-17 Hybrid structure for a surface acoustic wave device

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201913102YA SG10201913102YA (en) 2016-02-01 2017-01-17 Hybrid structure for a surface acoustic wave device

Country Status (8)

Country Link
US (2) US11335847B2 (en)
EP (1) EP3411910B1 (en)
JP (2) JP6890599B2 (en)
KR (1) KR20180108603A (en)
CN (1) CN108496257B (en)
FR (1) FR3047355B1 (en)
SG (2) SG11201805559YA (en)
WO (1) WO2017134357A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3079666B1 (en) * 2018-03-30 2020-04-03 Soitec HYBRID STRUCTURE FOR SURFACE ACOUSTIC WAVE DEVICE AND MANUFACTURING METHOD THEREOF
WO2020098910A1 (en) * 2018-11-13 2020-05-22 Huawei Technologies Co., Ltd. Surface acoustic wave device with phononic crystal
CN111220259A (en) * 2020-01-20 2020-06-02 西安柯莱特信息科技有限公司 Surface acoustic wave detector
EP3896850A1 (en) 2020-04-14 2021-10-20 IQE plc Layered structure with regions of localized strain in crystalline rare earth oxides
KR20220007691A (en) * 2020-04-21 2022-01-18 지난 징젱 일렉트로닉스 씨오., 엘티디. Composite substrate and manufacturing method thereof
CN113838955A (en) * 2020-06-24 2021-12-24 保定中创燕园半导体科技有限公司 Composite substrate based on aluminum nitride ceramic material and preparation method and application thereof

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US3887887A (en) * 1973-12-28 1975-06-03 Texas Instruments Inc Acoustic bulk mode suppressor
JPS6240811A (en) * 1985-08-17 1987-02-21 Tdk Corp Surface acoustic wave device
JPH07176975A (en) * 1993-12-20 1995-07-14 Murata Mfg Co Ltd Surface wave filter
JPH0897675A (en) * 1994-09-28 1996-04-12 Canon Inc Surface acoustic wave element and its manufacture and communication equipment using it
JP2001053579A (en) 1999-06-02 2001-02-23 Matsushita Electric Ind Co Ltd Surface acoustic wave element and mobile object communications equipment
JP2001196896A (en) * 2000-01-11 2001-07-19 Seiko Epson Corp Surface acoustic wave device
US6603241B1 (en) * 2000-05-23 2003-08-05 Agere Systems, Inc. Acoustic mirror materials for acoustic devices
FR2811828B1 (en) * 2000-07-13 2002-10-25 Thomson Csf SOUND WAVE DEVICE COMPRISING ALTERNATE POLARIZATION AREAS
US7498720B2 (en) * 2003-10-08 2009-03-03 Koninklijke Philips Electronics N.V. Bulk acoustic wave sensor
US8171795B1 (en) * 2006-01-23 2012-05-08 Drexel University Self-exciting, self-sensing piezoelectric cantilever sensor for detection of airborne analytes directly in air
JP4203085B2 (en) * 2006-06-30 2008-12-24 東芝テック株式会社 Inkjet printer and inkjet head
DE102007037502B4 (en) * 2007-08-08 2014-04-03 Epcos Ag Component with reduced temperature response
US8796904B2 (en) * 2011-10-31 2014-08-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer
CN102624352B (en) * 2010-10-06 2015-12-09 日本碍子株式会社 The manufacture method of composite base plate and composite base plate
CN103283147B (en) * 2010-12-24 2016-09-21 株式会社村田制作所 Acoustic wave device and manufacture method thereof
US8330325B1 (en) * 2011-06-16 2012-12-11 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising non-piezoelectric layer
US8350445B1 (en) * 2011-06-16 2013-01-08 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising non-piezoelectric layer and bridge
US8797123B2 (en) 2011-09-14 2014-08-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Double film bulk acoustic resonator having electrode edge alignments providing improved quality factor or electromechanical coupling coefficient
CN103918096B (en) * 2011-10-28 2018-09-28 印度马德拉斯理工学院 Piezoelectric device and its preparation and application
US9525399B2 (en) * 2011-10-31 2016-12-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Planarized electrode for improved performance in bulk acoustic resonators
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US11063572B2 (en) * 2016-12-15 2021-07-13 Qorvo Us, Inc. Polarity patterned piezoelectric film

Also Published As

Publication number Publication date
KR20180108603A (en) 2018-10-04
JP6890599B2 (en) 2021-06-18
US20190036007A1 (en) 2019-01-31
JP2019510391A (en) 2019-04-11
FR3047355B1 (en) 2019-04-19
JP2021100282A (en) 2021-07-01
FR3047355A1 (en) 2017-08-04
WO2017134357A1 (en) 2017-08-10
US20220158080A1 (en) 2022-05-19
EP3411910B1 (en) 2021-09-01
JP7118195B2 (en) 2022-08-15
EP3411910A1 (en) 2018-12-12
CN108496257B (en) 2022-05-03
US11335847B2 (en) 2022-05-17
SG10201913102YA (en) 2020-03-30
CN108496257A (en) 2018-09-04

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