SG11201810733PA - Hybrid structure for surface acoustic wave device - Google Patents

Hybrid structure for surface acoustic wave device

Info

Publication number
SG11201810733PA
SG11201810733PA SG11201810733PA SG11201810733PA SG11201810733PA SG 11201810733P A SG11201810733P A SG 11201810733PA SG 11201810733P A SG11201810733P A SG 11201810733PA SG 11201810733P A SG11201810733P A SG 11201810733PA SG 11201810733P A SG11201810733P A SG 11201810733PA
Authority
SG
Singapore
Prior art keywords
hybrid structure
acoustic wave
wave device
surface acoustic
useful layer
Prior art date
Application number
SG11201810733PA
Inventor
Marcel Broekaart
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG11201810733PA publication Critical patent/SG11201810733PA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

HYBRID STRUCTURE FOR SURFACE ACOUSTIC WAVE DEVICE The invention relates to a hybrid structure (100) for a surface acoustic wave device, comprising a useful layer (10) of piezoelectric material having a first free 5 surface (1) and a second surface (2) disposed on a support substrate (20) that has a lower coefficient of thermal expansion than that of the useful layer (10). The hybrid structure is characterised in that the useful layer (10) comprises an area (30) of nanocavities (31). 10 Fig. 1
SG11201810733PA 2016-06-02 2017-05-30 Hybrid structure for surface acoustic wave device SG11201810733PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1655030A FR3052298B1 (en) 2016-06-02 2016-06-02 HYBRID STRUCTURE FOR ACOUSTIC SURFACE WAVE DEVICE
PCT/FR2017/051339 WO2017207911A1 (en) 2016-06-02 2017-05-30 Hybrid structure for a surface acoustic wave device

Publications (1)

Publication Number Publication Date
SG11201810733PA true SG11201810733PA (en) 2018-12-28

Family

ID=56322239

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201810733PA SG11201810733PA (en) 2016-06-02 2017-05-30 Hybrid structure for surface acoustic wave device

Country Status (8)

Country Link
US (2) US11800803B2 (en)
EP (1) EP3465784B1 (en)
JP (1) JP7057288B2 (en)
KR (1) KR102410318B1 (en)
CN (1) CN109219896B (en)
FR (1) FR3052298B1 (en)
SG (1) SG11201810733PA (en)
WO (1) WO2017207911A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020098910A1 (en) * 2018-11-13 2020-05-22 Huawei Technologies Co., Ltd. Surface acoustic wave device with phononic crystal
DE102018131946A1 (en) 2018-12-12 2020-06-18 RF360 Europe GmbH Thin film SAW device
FR3091032B1 (en) * 2018-12-20 2020-12-11 Soitec Silicon On Insulator Method of transferring a surface layer to cavities
CN111490748B (en) * 2020-02-28 2024-06-04 武汉敏声新技术有限公司 Film bulk acoustic resonator
EP3896850A1 (en) * 2020-04-14 2021-10-20 IQE plc Layered structure with regions of localized strain in crystalline rare earth oxides
CN113629182A (en) * 2020-05-08 2021-11-09 济南晶正电子科技有限公司 TC-SAW composite substrate and preparation method thereof
CN112382559B (en) * 2020-11-13 2024-06-11 中国科学院上海微系统与信息技术研究所 Heterogeneous film structure and preparation method thereof

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004045181B4 (en) 2004-09-17 2016-02-04 Epcos Ag SAW device with reduced temperature response and method of manufacture
JP2008219720A (en) * 2007-03-07 2008-09-18 Matsushita Electric Ind Co Ltd Surface acoustic wave device
US8997320B2 (en) * 2008-01-24 2015-04-07 Murata Manufacturing Co., Ltd. Method for manufacturing acoustic wave device
KR100912553B1 (en) * 2008-03-07 2009-08-19 오영주 Piezoelectric substrate and surface acoustic wave filter using the same
JP5429200B2 (en) * 2010-05-17 2014-02-26 株式会社村田製作所 Method for manufacturing composite piezoelectric substrate and piezoelectric device
JP5695394B2 (en) 2010-11-17 2015-04-01 日本碍子株式会社 Composite substrate manufacturing method
JP5814774B2 (en) * 2010-12-22 2015-11-17 日本碍子株式会社 Composite substrate and method for manufacturing composite substrate
EP2658123B1 (en) * 2010-12-24 2019-02-13 Murata Manufacturing Co., Ltd. Elastic wave device and method for manufacturing the same.
FR3004289B1 (en) * 2013-04-08 2015-05-15 Soitec Silicon On Insulator SURFACE ACOUSTIC WAVE COMPONENT AND METHOD OF MANUFACTURING THE SAME

Also Published As

Publication number Publication date
US11800803B2 (en) 2023-10-24
JP7057288B2 (en) 2022-04-19
WO2017207911A1 (en) 2017-12-07
EP3465784B1 (en) 2020-04-08
US20190165252A1 (en) 2019-05-30
EP3465784A1 (en) 2019-04-10
KR20190014072A (en) 2019-02-11
US20240040930A1 (en) 2024-02-01
FR3052298A1 (en) 2017-12-08
KR102410318B1 (en) 2022-06-17
CN109219896B (en) 2022-11-22
CN109219896A (en) 2019-01-15
FR3052298B1 (en) 2018-07-13
JP2019520753A (en) 2019-07-18

Similar Documents

Publication Publication Date Title
SG11201810569WA (en) Hybrid structure for surface acoustic wave device
SG11201810733PA (en) Hybrid structure for surface acoustic wave device
SG11201805559YA (en) Hybrid structure for a surface acoustic wave device
SG11201805398VA (en) Substrate for a temperature-compensated surface acoustic wave device or bulk acoustic wave device
GB2580496B (en) Acoustic wave device with high thermal conductivity layer on interdigital transducer
WO2014134507A3 (en) Pedestal construction with low coefficient of thermal expansion top
MY186812A (en) Iii-n devices in si trenches
IN2014MN01027A (en)
MA40892B1 (en) Device for producing a cold plasma at atmospheric pressure
GB2566188A (en) Thermal interface material structures
TW200614420A (en) Semiconductor structure and semiconductor process
EP2704216A3 (en) Flexible semiconductor devices and methods of manufacturing the same
EP2886210A3 (en) Ultrasonic sensor and measuring method using the same, and method of manufacturing ultrasonic sensor
TW200711004A (en) Method of forming buried isolation regions in semiconductor substrates and semiconductor devices with buried isolation regions
SG11201908449QA (en) Saw resonator comprising layers for attenuating parasitic waves
WO2013032691A3 (en) Engineered substrates for semiconductor devices and associated systems and methods
GB2529953A (en) Nanostructures and nanofeatures with Si (111) planes on Si (100) wafers for III-N epitaxy
JP2016076798A5 (en)
MY173532A (en) Semiconductor device and manufacturing method for the semiconductor device
WO2018002035A3 (en) Method of processing wafer having protrusions on the back side
WO2008103331A3 (en) Wide-bandgap semiconductor devices
SG144153A1 (en) Lithographic apparatus and device manufacturing method
GB2526464A (en) Methods of forming buried microelectricomechanical structures coupled with device substrates and structures formed thereby
MX2023004919A (en) Method and device for promoting adhesion of metallic surfaces.
GB2507693A (en) Saw filter having planar barrier layer and method of making