SG10201805702QA - Method of forming an integrated circuit and related integrated circuit - Google Patents
Method of forming an integrated circuit and related integrated circuitInfo
- Publication number
- SG10201805702QA SG10201805702QA SG10201805702QA SG10201805702QA SG10201805702QA SG 10201805702Q A SG10201805702Q A SG 10201805702QA SG 10201805702Q A SG10201805702Q A SG 10201805702QA SG 10201805702Q A SG10201805702Q A SG 10201805702QA SG 10201805702Q A SG10201805702Q A SG 10201805702QA
- Authority
- SG
- Singapore
- Prior art keywords
- integrated circuit
- forming
- wafer material
- semiconductor substrate
- pair
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 239000000463 material Substances 0.000 abstract 5
- 230000003287 optical effect Effects 0.000 abstract 2
- 230000005693 optoelectronics Effects 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12002—Three-dimensional structures
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4274—Electrical aspects
- G02B6/428—Electrical aspects containing printed circuit boards [PCB]
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8258—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213, H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
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- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
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- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
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- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
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- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
- H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/121—Channel; buried or the like
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Composite Materials (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optical Integrated Circuits (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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US201461964776P | 2014-01-14 | 2014-01-14 |
Publications (1)
Publication Number | Publication Date |
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SG10201805702QA true SG10201805702QA (en) | 2018-08-30 |
Family
ID=53543260
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201805702QA SG10201805702QA (en) | 2014-01-14 | 2015-01-14 | Method of forming an integrated circuit and related integrated circuit |
SG11201605734TA SG11201605734TA (en) | 2014-01-14 | 2015-01-14 | Method of forming an integrated circuit and related integrated circuit |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201605734TA SG11201605734TA (en) | 2014-01-14 | 2015-01-14 | Method of forming an integrated circuit and related integrated circuit |
Country Status (8)
Country | Link |
---|---|
US (2) | US9874689B2 (fr) |
EP (1) | EP3095133A4 (fr) |
JP (1) | JP6725420B2 (fr) |
KR (1) | KR20160108459A (fr) |
CN (1) | CN106463522B (fr) |
SG (2) | SG10201805702QA (fr) |
TW (1) | TWI635330B (fr) |
WO (1) | WO2015108488A1 (fr) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3345209A4 (fr) * | 2015-09-04 | 2018-11-14 | Nanyang Technological University | Procédé d'encapsulation de substrat |
CN105445854B (zh) * | 2015-11-06 | 2018-09-25 | 南京邮电大学 | 硅衬底悬空led光波导集成光子器件及其制备方法 |
CN105428305B (zh) * | 2015-11-20 | 2018-08-24 | 南京邮电大学 | 悬空led光波导光电探测器单片集成器件及其制备方法 |
US10923473B2 (en) * | 2016-02-18 | 2021-02-16 | Massachusetts Institute Of Technology | High voltage logic circuit |
WO2017171829A1 (fr) | 2016-04-01 | 2017-10-05 | Intel Corporation | Transistor nmos au nitrure de gallium sur silicium (111) co-intégré avec un transistor pmos au silicium |
EP3336892A1 (fr) * | 2016-12-15 | 2018-06-20 | Caliopa NV | Circuit intégré photonique |
KR20190098199A (ko) | 2016-12-22 | 2019-08-21 | 루미레즈 엘엘씨 | 동작 피드백을 위한 센서 세그먼트를 구비한 발광 다이오드들 |
US10205064B2 (en) | 2016-12-22 | 2019-02-12 | Lumileds Llc | Light emitting diodes with sensor segment for operational feedback |
US10847553B2 (en) | 2017-01-13 | 2020-11-24 | Massachusetts Institute Of Technology | Method of forming a multilayer structure for a pixelated display and a multilayer structure for a pixelated display |
US20180269105A1 (en) * | 2017-03-15 | 2018-09-20 | Globalfoundries Singapore Pte. Ltd. | Bonding of iii-v-and-si substrates with interconnect metal layers |
US11320267B2 (en) | 2017-03-23 | 2022-05-03 | Kvh Industries, Inc. | Integrated optic wavemeter and method for fiber optic gyroscopes scale factor stabilization |
US10319690B2 (en) * | 2017-04-28 | 2019-06-11 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
US10840264B2 (en) * | 2017-09-28 | 2020-11-17 | International Business Machines Corporation | Ultra-thin-body GaN on insulator device |
US10574354B2 (en) * | 2017-12-12 | 2020-02-25 | International Business Machines Corporation | Data transfer arrangement for a hybrid integrated circuit (HIC) and an HIC with the data transfer arrangement |
FR3075461B1 (fr) * | 2017-12-20 | 2020-02-14 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'une heterostructure comportant des structures elementaires photoniques en materiau iii-v a la surface d'un substrat a base de silicium |
CN108231803B (zh) * | 2017-12-26 | 2020-08-11 | 中国电子科技集团公司第五十五研究所 | 氮化硅光波导器件和石墨烯探测器集成芯片及其制作方法 |
EP3864373A1 (fr) | 2018-10-11 | 2021-08-18 | KVH Industries, Inc. | Circuits intégrés photoniques, gyroscopes à fibres optiques et leurs procédés de fabrication |
US20210074880A1 (en) * | 2018-12-18 | 2021-03-11 | Bolb Inc. | Light-output-power self-awareness light-emitting device |
JP2020144294A (ja) * | 2019-03-08 | 2020-09-10 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US11353655B2 (en) | 2019-05-22 | 2022-06-07 | Kvh Industries, Inc. | Integrated optical polarizer and method of making same |
EP3991204A4 (fr) * | 2019-06-27 | 2022-08-24 | Avicenatech Corp. | Interconnexion optique à échelle de puce utilisant des micro-led |
CN110600362B (zh) * | 2019-08-01 | 2022-05-20 | 中国科学院微电子研究所 | 硅基异构集成材料及其制备方法、半导体器件 |
US11624882B2 (en) * | 2019-09-13 | 2023-04-11 | Avicenatech Corp. | Optical interconnects using microLEDs |
WO2021061052A1 (fr) * | 2019-09-27 | 2021-04-01 | New Silicon Corporation Pte Ltd | Procédé de fabrication d'un dispositif à semi-conducteur et dispositif à semi-conducteur associé |
US11487059B2 (en) * | 2021-02-19 | 2022-11-01 | Globalfoundries U.S. Inc. | Photonics integrated circuit with silicon nitride waveguide edge coupler |
FR3144325A1 (fr) * | 2022-12-22 | 2024-06-28 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Système optoélectronique comprenant un transducteur et un guide d'ondes |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59129481A (ja) * | 1983-01-17 | 1984-07-25 | Oki Electric Ind Co Ltd | 発光受光装置 |
JPH0336413A (ja) | 1989-06-30 | 1991-02-18 | Ebara Infilco Co Ltd | 多段式旋回溶融炉 |
JPH0936413A (ja) * | 1995-07-14 | 1997-02-07 | Denso Corp | 光結合半導体装置 |
JP4258860B2 (ja) * | 1998-09-04 | 2009-04-30 | セイコーエプソン株式会社 | 光伝達手段を備えた装置 |
GR1003602B (el) * | 2000-02-29 | 2001-06-19 | Αλεξανδρος Γεωργακιλας | Διαδικασια ολοκληρωσης, σε κλιμακα ακεραιων δισκιων ημιαγωγων, οπτοηλεκτρονικων ημιαγωγικων διαταξεων, βασισμενων σε αρσενικουχογαλλιο και ολοκληρωμενων κυκλωματων πυριτιου |
JP4408006B2 (ja) | 2001-06-28 | 2010-02-03 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US7010208B1 (en) * | 2002-06-24 | 2006-03-07 | Luxtera, Inc. | CMOS process silicon waveguides |
US7095058B2 (en) | 2003-03-21 | 2006-08-22 | Intel Corporation | System and method for an improved light-emitting device |
US7312487B2 (en) * | 2004-08-16 | 2007-12-25 | International Business Machines Corporation | Three dimensional integrated circuit |
US7535089B2 (en) * | 2005-11-01 | 2009-05-19 | Massachusetts Institute Of Technology | Monolithically integrated light emitting devices |
US8168939B2 (en) * | 2008-07-09 | 2012-05-01 | Luxtera, Inc. | Method and system for a light source assembly supporting direct coupling to an integrated circuit |
WO2011035348A2 (fr) | 2009-06-15 | 2011-03-24 | Tshwane University Of Technology | Système de communication optique tout-silicium à 750 nm et à base cmos utilisant des led à avalanche en mod-e |
US8260098B1 (en) | 2011-02-17 | 2012-09-04 | Nxp B.V. | Optocoupler circuit |
US9423560B2 (en) * | 2011-12-15 | 2016-08-23 | Alcatel Lucent | Electronic/photonic integrated circuit architecture and method of manufacture thereof |
US8682129B2 (en) * | 2012-01-20 | 2014-03-25 | Micron Technology, Inc. | Photonic device and methods of formation |
US9778416B2 (en) * | 2014-08-25 | 2017-10-03 | Micron Technology, Inc. | Method and structure providing a front-end-of-line and a back-end-of-line coupled waveguides |
-
2015
- 2015-01-14 SG SG10201805702QA patent/SG10201805702QA/en unknown
- 2015-01-14 KR KR1020167021888A patent/KR20160108459A/ko not_active Application Discontinuation
- 2015-01-14 WO PCT/SG2015/000011 patent/WO2015108488A1/fr active Application Filing
- 2015-01-14 EP EP15737847.2A patent/EP3095133A4/fr active Pending
- 2015-01-14 TW TW104101187A patent/TWI635330B/zh active
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JP6725420B2 (ja) | 2020-07-15 |
CN106463522A (zh) | 2017-02-22 |
US20160327737A1 (en) | 2016-11-10 |
TWI635330B (zh) | 2018-09-11 |
JP2017508279A (ja) | 2017-03-23 |
EP3095133A1 (fr) | 2016-11-23 |
US9874689B2 (en) | 2018-01-23 |
KR20160108459A (ko) | 2016-09-19 |
WO2015108488A1 (fr) | 2015-07-23 |
SG11201605734TA (en) | 2016-08-30 |
CN106463522B (zh) | 2019-12-03 |
US20180172903A1 (en) | 2018-06-21 |
EP3095133A4 (fr) | 2017-08-30 |
US10324256B2 (en) | 2019-06-18 |
TW201539072A (zh) | 2015-10-16 |
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