SG10201803987PA - Interconnect wires including relatively low resistivity cores - Google Patents

Interconnect wires including relatively low resistivity cores

Info

Publication number
SG10201803987PA
SG10201803987PA SG10201803987PA SG10201803987PA SG10201803987PA SG 10201803987P A SG10201803987P A SG 10201803987PA SG 10201803987P A SG10201803987P A SG 10201803987PA SG 10201803987P A SG10201803987P A SG 10201803987PA SG 10201803987P A SG10201803987P A SG 10201803987PA
Authority
SG
Singapore
Prior art keywords
cores
relatively low
low resistivity
including relatively
interconnect wires
Prior art date
Application number
SG10201803987PA
Other languages
English (en)
Inventor
Hui Jae Yoo
Tejaswi K Indukuri
Ramanan V Chebiam
James S Clarke
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of SG10201803987PA publication Critical patent/SG10201803987PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53233—Copper alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76882—Reflowing or applying of pressure to better fill the contact hole
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5228—Resistive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5283—Cross-sectional geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H01L23/53252—Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
    • H01L23/53266—Additional layers associated with refractory-metal layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Conductors (AREA)
SG10201803987PA 2013-09-26 2014-09-25 Interconnect wires including relatively low resistivity cores SG10201803987PA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/038,502 US9349636B2 (en) 2013-09-26 2013-09-26 Interconnect wires including relatively low resistivity cores

Publications (1)

Publication Number Publication Date
SG10201803987PA true SG10201803987PA (en) 2018-06-28

Family

ID=52690238

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201803987PA SG10201803987PA (en) 2013-09-26 2014-09-25 Interconnect wires including relatively low resistivity cores
SG11201600829RA SG11201600829RA (en) 2013-09-26 2014-09-25 Interconnect wires including relatively low resistivity cores

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201600829RA SG11201600829RA (en) 2013-09-26 2014-09-25 Interconnect wires including relatively low resistivity cores

Country Status (7)

Country Link
US (6) US9349636B2 (ko)
EP (1) EP3050081B1 (ko)
KR (3) KR20230006599A (ko)
CN (3) CN105493243A (ko)
SG (2) SG10201803987PA (ko)
TW (1) TWI556297B (ko)
WO (1) WO2015048221A1 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9349636B2 (en) * 2013-09-26 2016-05-24 Intel Corporation Interconnect wires including relatively low resistivity cores
US9576894B2 (en) * 2015-06-03 2017-02-21 GlobalFoundries, Inc. Integrated circuits including organic interlayer dielectric layers and methods for fabricating the same
US10211093B2 (en) 2016-07-08 2019-02-19 Samsung Electronics Co., Ltd. Interconnect structure formed with a high aspect ratio single damascene copper line on a non-damascene via
US20180138123A1 (en) 2016-11-15 2018-05-17 Globalfoundries Inc. Interconnect structure and method of forming the same
TWI753993B (zh) * 2017-01-20 2022-02-01 日商東京威力科創股份有限公司 內連線結構及其形成方法
US10438846B2 (en) * 2017-11-28 2019-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition process for semiconductor interconnection structures
US11749560B2 (en) 2018-09-25 2023-09-05 Intel Corporation Cladded metal interconnects
US11328954B2 (en) 2020-03-13 2022-05-10 International Business Machines Corporation Bi metal subtractive etch for trench and via formation
US20230197510A1 (en) * 2021-12-20 2023-06-22 International Business Machines Corporation Hybrid metal interconnects

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6597067B1 (en) * 1994-02-28 2003-07-22 International Business Machines Corporation Self-aligned, lateral diffusion barrier in metal lines to eliminate electromigration
US6060388A (en) * 1997-10-29 2000-05-09 International Business Machines Corporation Conductors for microelectronic circuits and method of manufacture
US6870263B1 (en) * 1998-03-31 2005-03-22 Infineon Technologies Ag Device interconnection
US6734559B1 (en) * 1999-09-17 2004-05-11 Advanced Micro Devices, Inc. Self-aligned semiconductor interconnect barrier and manufacturing method therefor
US6569757B1 (en) 1999-10-28 2003-05-27 Philips Electronics North America Corporation Methods for forming co-axial interconnect lines in a CMOS process for high speed applications
TWI227043B (en) * 2000-09-01 2005-01-21 Koninkl Philips Electronics Nv Method of manufacturing a semiconductor device
US6406996B1 (en) * 2000-09-30 2002-06-18 Advanced Micro Devices, Inc. Sub-cap and method of manufacture therefor in integrated circuit capping layers
US6657303B1 (en) 2000-12-18 2003-12-02 Advanced Micro Devices, Inc. Integrated circuit with low solubility metal-conductor interconnect cap
US20020081845A1 (en) * 2000-12-27 2002-06-27 Novellus Systems, Inc. Method for the formation of diffusion barrier
KR100550505B1 (ko) * 2001-03-01 2006-02-13 가부시끼가이샤 도시바 반도체 장치 및 반도체 장치의 제조 방법
US6566171B1 (en) * 2001-06-12 2003-05-20 Lsi Logic Corporation Fuse construction for integrated circuit structure having low dielectric constant dielectric material
US6689680B2 (en) * 2001-07-14 2004-02-10 Motorola, Inc. Semiconductor device and method of formation
US6599778B2 (en) * 2001-12-19 2003-07-29 International Business Machines Corporation Chip and wafer integration process using vertical connections
US6566250B1 (en) * 2002-03-18 2003-05-20 Taiwant Semiconductor Manufacturing Co., Ltd Method for forming a self aligned capping layer
US7008872B2 (en) * 2002-05-03 2006-03-07 Intel Corporation Use of conductive electrolessly deposited etch stop layers, liner layers and via plugs in interconnect structures
US20040096592A1 (en) * 2002-11-19 2004-05-20 Chebiam Ramanan V. Electroless cobalt plating solution and plating techniques
US6885074B2 (en) * 2002-11-27 2005-04-26 Freescale Semiconductor, Inc. Cladded conductor for use in a magnetoelectronics device and method for fabricating the same
JP4454242B2 (ja) * 2003-03-25 2010-04-21 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US6927113B1 (en) * 2003-05-23 2005-08-09 Advanced Micro Devices Semiconductor component and method of manufacture
US20050095855A1 (en) * 2003-11-05 2005-05-05 D'urso John J. Compositions and methods for the electroless deposition of NiFe on a work piece
US6992390B2 (en) * 2003-11-07 2006-01-31 International Business Machines Corp. Liner with improved electromigration redundancy for damascene interconnects
US7024763B2 (en) * 2003-11-26 2006-04-11 Formfactor, Inc. Methods for making plated through holes usable as interconnection wire or probe attachments
US20050141148A1 (en) * 2003-12-02 2005-06-30 Kabushiki Kaisha Toshiba Magnetic memory
DE102004003863B4 (de) * 2004-01-26 2009-01-29 Advanced Micro Devices, Inc., Sunnyvale Technik zur Herstellung eingebetteter Metallleitungen mit einer erhöhten Widerstandsfähigkeit gegen durch Belastung hervorgerufenen Materialtransport
JP4549075B2 (ja) 2004-02-19 2010-09-22 株式会社リコー 半導体装置及びその製造方法
JP4198631B2 (ja) * 2004-04-28 2008-12-17 富士通マイクロエレクトロニクス株式会社 絶縁膜形成方法及び半導体装置
JP2005347510A (ja) * 2004-06-03 2005-12-15 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7253089B2 (en) * 2004-06-14 2007-08-07 Micron Technology, Inc. Microfeature devices and methods for manufacturing microfeature devices
JP4224434B2 (ja) * 2004-06-30 2009-02-12 パナソニック株式会社 半導体装置及びその製造方法
US7189650B2 (en) * 2004-11-12 2007-03-13 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for copper film quality enhancement with two-step deposition
US20060128144A1 (en) * 2004-12-15 2006-06-15 Hyun-Mog Park Interconnects having a recessed capping layer and methods of fabricating the same
US8084294B2 (en) * 2005-02-18 2011-12-27 Nec Corporation Method of fabricating organic silicon film, semiconductor device including the same, and method of fabricating the semiconductor device
US7335588B2 (en) * 2005-04-15 2008-02-26 International Business Machines Corporation Interconnect structure and method of fabrication of same
DE102005024912A1 (de) * 2005-05-31 2006-12-07 Advanced Micro Devices, Inc., Sunnyvale Technik zur Herstellung von kupferenthaltenden Leitungen, die in einem Dielektrikum mit kleinem ε eingebettet sind, durch Vorsehen einer Versteifungsschicht
US7381635B2 (en) * 2005-07-18 2008-06-03 International Business Machines Corporation Method and structure for reduction of soft error rates in integrated circuits
US7579274B2 (en) * 2006-02-21 2009-08-25 Alchimer Method and compositions for direct copper plating and filing to form interconnects in the fabrication of semiconductor devices
US7919862B2 (en) * 2006-05-08 2011-04-05 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing resistivity in interconnect structures of integrated circuits
US7956465B2 (en) * 2006-05-08 2011-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing resistivity in interconnect structures of integrated circuits
US8193087B2 (en) * 2006-05-18 2012-06-05 Taiwan Semiconductor Manufacturing Co., Ltd. Process for improving copper line cap formation
US7666781B2 (en) * 2006-11-22 2010-02-23 International Business Machines Corporation Interconnect structures with improved electromigration resistance and methods for forming such interconnect structures
US20080296768A1 (en) * 2006-12-14 2008-12-04 Chebiam Ramanan V Copper nucleation in interconnects having ruthenium layers
DE102007009912B4 (de) * 2007-02-28 2009-06-10 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung einer kupferbasierten Metallisierungsschicht mit einer leitenden Deckschicht durch ein fortschrittliches Integrationsschema
US20090001591A1 (en) * 2007-06-29 2009-01-01 Michael Haverty Reducing resistivity in metal interconnects by compressive straining
US7939823B2 (en) * 2007-09-10 2011-05-10 International Business Machines Corporation Method and structures for accelerated soft-error testing
US20090166867A1 (en) * 2007-12-31 2009-07-02 Harsono Simka Metal interconnect structures for semiconductor devices
US20090200668A1 (en) * 2008-02-07 2009-08-13 International Business Machines Corporation Interconnect structure with high leakage resistance
US8017514B2 (en) * 2008-05-05 2011-09-13 International Business Machines Corporation Optically transparent wires for secure circuits and methods of making same
DE102008030849B4 (de) * 2008-06-30 2013-12-19 Advanced Micro Devices, Inc. Verfahren zur Reduzierung der Leckströme in dielektrischen Materialien mit Metallgebieten und einer Metalldeckschicht in Halbleiterbauelementen
CN101630667A (zh) * 2008-07-15 2010-01-20 中芯国际集成电路制造(上海)有限公司 形成具有铜互连的导电凸块的方法和系统
US8384224B2 (en) * 2008-08-08 2013-02-26 International Business Machines Corporation Through wafer vias and method of making same
US8258626B2 (en) * 2008-09-16 2012-09-04 Advanced Interconnect Materials, Llc Copper interconnection, method for forming copper interconnection structure, and semiconductor device
DE102008059650B4 (de) * 2008-11-28 2018-06-21 Globalfoundries Inc. Verfahren zur Herstellung einer Mikrostruktur mit einer Metallisierungsstruktur mit selbstjustierten Luftspalten zwischen dichtliegenden Metallleitungen
JP4441658B1 (ja) * 2008-12-19 2010-03-31 国立大学法人東北大学 銅配線形成方法、銅配線および半導体装置
DE102009039416A1 (de) * 2009-08-31 2011-03-17 Globalfoundries Dresden Module One Llc & Co. Kg Abgesenktes Zwischenschichtdielektrikum in einer Metallisierungsstruktur eines Halbleiterbauelements
US8852674B2 (en) * 2010-11-12 2014-10-07 Applied Materials, Inc. Method for segregating the alloying elements and reducing the residue resistivity of copper alloy layers
US8461683B2 (en) * 2011-04-01 2013-06-11 Intel Corporation Self-forming, self-aligned barriers for back-end interconnects and methods of making same
CN102332426A (zh) * 2011-09-23 2012-01-25 复旦大学 一种用于纳米集成电路的铜扩散阻挡层的制备方法
US9123706B2 (en) * 2011-12-21 2015-09-01 Intel Corporation Electroless filled conductive structures
US8796853B2 (en) * 2012-02-24 2014-08-05 International Business Machines Corporation Metallic capped interconnect structure with high electromigration resistance and low resistivity
KR20140036533A (ko) * 2012-09-17 2014-03-26 삼성전기주식회사 인쇄회로기판 및 그 제조방법
CN102881677A (zh) * 2012-09-24 2013-01-16 复旦大学 一种用于铜互连的合金抗铜扩散阻挡层及其制造方法
US9576892B2 (en) * 2013-09-09 2017-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of forming same
US9349636B2 (en) * 2013-09-26 2016-05-24 Intel Corporation Interconnect wires including relatively low resistivity cores

Also Published As

Publication number Publication date
US20230130273A1 (en) 2023-04-27
US9691657B2 (en) 2017-06-27
US20210020502A1 (en) 2021-01-21
SG11201600829RA (en) 2016-03-30
TW201532130A (zh) 2015-08-16
US20170372950A1 (en) 2017-12-28
US20160225665A1 (en) 2016-08-04
CN105493243A (zh) 2016-04-13
KR20220005643A (ko) 2022-01-13
KR20160061962A (ko) 2016-06-01
US9349636B2 (en) 2016-05-24
EP3050081A4 (en) 2017-05-10
US11881432B2 (en) 2024-01-23
US11569126B2 (en) 2023-01-31
US10832951B2 (en) 2020-11-10
US20240112952A1 (en) 2024-04-04
CN107731785A (zh) 2018-02-23
KR102472898B1 (ko) 2022-12-02
CN113809003A (zh) 2021-12-17
KR20230006599A (ko) 2023-01-10
US20150084198A1 (en) 2015-03-26
TWI556297B (zh) 2016-11-01
EP3050081A1 (en) 2016-08-03
CN107731785B (zh) 2022-03-29
WO2015048221A1 (en) 2015-04-02
EP3050081B1 (en) 2021-07-07

Similar Documents

Publication Publication Date Title
SG10201803987PA (en) Interconnect wires including relatively low resistivity cores
EP3064604A4 (en) Copper alloy wire, copper alloy stranded wire, coated electric wire, wire harness and manufacturing method of copper alloy wire
EP3089168A4 (en) Insulated wire, coil, electrical/electronic apparatus, and method for manufacturing insulated wire in which coating film separation is prevented
EP2940700A3 (en) Magnetic-core three-dimensional (3d) inductors and packaging integration
MX2011010508A (es) Cable con capa de barrera.
GB2549653A (en) Additive manufacturing of metallic structures
MX2016008001A (es) Cable electrico y metodo para elaborar dicho cable.
AR089343A1 (es) Cable con capa de barrera no inflamable
MY163248A (en) Insulated wire having a layer containing bubbles, electrical equipment, and method of producing insulated wire having a layer containing bubbles
WO2014164707A3 (en) Hybrid core conductor
WO2014110249A3 (en) Methods and apparatus for providing location information with private expressions
WO2011100042A3 (en) Stator with cavity for retaining wires and method of forming the same
GB2504418A (en) Electrical fuse and method of making the same
EP3297819A4 (en) CORRUGATED SURFACE ELECTROCONDUCTIVE MATERIAL, ELECTRIC TERMINAL COMPRISING SUCH MATERIAL, AND PROCESS FOR PRODUCING THE MATERIAL
EP3089169A4 (en) Insulated wire, coil, and electronic/electrical equipment
MX2016015270A (es) Cable electromecánico forrado de torsión eqilibrada.
MY192082A (en) Interconnect core
WO2015004541A3 (en) Method of forming a laminate structure having a plated through-hole using a removable cover layer
EA201691746A1 (ru) Токопроводящая жила кабеля, предназначенная для кабеля, в частности индукционного кабеля, кабель и способ изготовления токопроводящей жилы кабеля
EP3061793A4 (en) ELECTRICALLY CONDUCTIVE COMPOSITION, ELECTRIC LADDER, ELECTRICAL LADDER MANUFACTURING METHOD AND POLYMER MANUFACTURING METHOD
SG11201602382SA (en) Electrical conductor and method of fabricating the same
MX2015012535A (es) Cable de alimentacion con una capa de aislamiento grueso y un metodo para su fabricacion.
WO2016071098A3 (de) Induktives bauelement
WO2016041917A3 (en) Insulation of a wound conductor and method for insulating such a conductor
GB2525569A (en) Superconductive wires and associated method of manufacture