SG10201708450PA - Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating - Google Patents

Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating

Info

Publication number
SG10201708450PA
SG10201708450PA SG10201708450PA SG10201708450PA SG10201708450PA SG 10201708450P A SG10201708450P A SG 10201708450PA SG 10201708450P A SG10201708450P A SG 10201708450PA SG 10201708450P A SG10201708450P A SG 10201708450PA SG 10201708450P A SG10201708450P A SG 10201708450PA
Authority
SG
Singapore
Prior art keywords
mesas
masks
areas
support plate
fabricating
Prior art date
Application number
SG10201708450PA
Other languages
English (en)
Inventor
Erickson Ann
Gaff Keith
RAMDUTT Devin
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201708450PA publication Critical patent/SG10201708450PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Bipolar Transistors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
SG10201708450PA 2016-11-29 2017-10-12 Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating SG10201708450PA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15/363,558 US20180148835A1 (en) 2016-11-29 2016-11-29 Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating

Publications (1)

Publication Number Publication Date
SG10201708450PA true SG10201708450PA (en) 2018-06-28

Family

ID=62193224

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201708450PA SG10201708450PA (en) 2016-11-29 2017-10-12 Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating

Country Status (6)

Country Link
US (2) US20180148835A1 (zh)
JP (1) JP7111460B2 (zh)
KR (1) KR102537060B1 (zh)
CN (1) CN108335993B (zh)
SG (1) SG10201708450PA (zh)
TW (1) TWI783955B (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170211185A1 (en) * 2016-01-22 2017-07-27 Applied Materials, Inc. Ceramic showerhead with embedded conductive layers
US20180204747A1 (en) * 2017-01-17 2018-07-19 Applied Materials, Inc. Substrate support assembly having surface features to improve thermal performance
US11133212B2 (en) * 2018-05-16 2021-09-28 Applied Materials, Inc. High temperature electrostatic chuck
KR20210013762A (ko) * 2018-06-22 2021-02-05 어플라이드 머티어리얼스, 인코포레이티드 반도체 웨이퍼 프로세싱에서 웨이퍼 후면 손상을 최소화하는 방법들
US11133211B2 (en) * 2018-08-22 2021-09-28 Lam Research Corporation Ceramic baseplate with channels having non-square corners
US20220002866A1 (en) * 2018-11-28 2022-01-06 Lam Research Corporation Pedestal including vapor chamber for substrate processing systems
WO2020149936A1 (en) * 2019-01-18 2020-07-23 Applied Materials, Inc. Heated pedestal design for improved heat transfer and temperature uniformity
JP7058239B2 (ja) * 2019-03-14 2022-04-21 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置およびプログラム
US20210035767A1 (en) * 2019-07-29 2021-02-04 Applied Materials, Inc. Methods for repairing a recess of a chamber component
US11075104B2 (en) * 2019-08-27 2021-07-27 Taiwan Semiconductor Manufacturing Company Limited Semiconductor chuck and method of making
US11887811B2 (en) * 2020-09-08 2024-01-30 Applied Materials, Inc. Semiconductor processing chambers for deposition and etch
CN113201728B (zh) * 2021-04-28 2023-10-31 錼创显示科技股份有限公司 半导体晶圆承载结构及金属有机化学气相沉积装置
KR102572807B1 (ko) * 2021-06-10 2023-08-29 경희대학교 산학협력단 기판의 온도균일도 제어장치 및 제어방법
CN113622021B (zh) * 2021-06-18 2023-02-17 华灿光电（浙江）有限公司 用于提高外延片的生长均匀度的外延托盘

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JPH0718438A (ja) * 1993-06-17 1995-01-20 Anelva Corp 静電チャック装置
US6482747B1 (en) * 1997-12-26 2002-11-19 Hitachi, Ltd. Plasma treatment method and plasma treatment apparatus
JPH11330219A (ja) * 1998-05-12 1999-11-30 Hitachi Ltd 静電吸着装置
JP3805134B2 (ja) * 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
JP2002270681A (ja) * 2001-03-07 2002-09-20 Anelva Corp 基板処理用静電吸着機構
US6682603B2 (en) * 2002-05-07 2004-01-27 Applied Materials Inc. Substrate support with extended radio frequency electrode upper surface
JP4417197B2 (ja) * 2004-07-30 2010-02-17 住友大阪セメント株式会社 サセプタ装置
JP2007067394A (ja) * 2005-08-05 2007-03-15 Tokyo Electron Ltd 基板処理装置およびそれに用いる基板載置台
US20100162956A1 (en) * 2005-08-05 2010-07-01 Seishi Murakami Substrate Processing Apparatus and Substrate Mount Table Used in the Apparatus
US7956310B2 (en) * 2005-09-30 2011-06-07 Tokyo Electron Limited Stage, substrate processing apparatus, plasma processing apparatus, control method for stage, control method for plasma processing apparatus, and storage media
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Also Published As

Publication number Publication date
JP7111460B2 (ja) 2022-08-02
KR20180060954A (ko) 2018-06-07
CN108335993B (zh) 2023-08-18
JP2018098497A (ja) 2018-06-21
CN108335993A (zh) 2018-07-27
TW201834027A (zh) 2018-09-16
KR102537060B1 (ko) 2023-05-25
TWI783955B (zh) 2022-11-21
US20220380894A1 (en) 2022-12-01
US20180148835A1 (en) 2018-05-31

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