SG10201704782VA - Showerhead curtain gas method and system for film profile modulation - Google Patents
Showerhead curtain gas method and system for film profile modulationInfo
- Publication number
- SG10201704782VA SG10201704782VA SG10201704782VA SG10201704782VA SG10201704782VA SG 10201704782V A SG10201704782V A SG 10201704782VA SG 10201704782V A SG10201704782V A SG 10201704782VA SG 10201704782V A SG10201704782V A SG 10201704782VA SG 10201704782V A SG10201704782V A SG 10201704782VA
- Authority
- SG
- Singapore
- Prior art keywords
- showerhead
- curtain gas
- gas method
- film profile
- profile modulation
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32899—Multiple chambers, e.g. cluster tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/186,275 US9738977B1 (en) | 2016-06-17 | 2016-06-17 | Showerhead curtain gas method and system for film profile modulation |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201704782VA true SG10201704782VA (en) | 2018-01-30 |
Family
ID=59581456
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201704782VA SG10201704782VA (en) | 2016-06-17 | 2017-06-12 | Showerhead curtain gas method and system for film profile modulation |
SG10202012689YA SG10202012689YA (en) | 2016-06-17 | 2017-06-12 | Showerhead curtain gas method and system for film profile modulation |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202012689YA SG10202012689YA (en) | 2016-06-17 | 2017-06-12 | Showerhead curtain gas method and system for film profile modulation |
Country Status (6)
Country | Link |
---|---|
US (2) | US9738977B1 (enrdf_load_stackoverflow) |
JP (1) | JP7171165B2 (enrdf_load_stackoverflow) |
KR (5) | KR102333807B1 (enrdf_load_stackoverflow) |
CN (4) | CN115584488A (enrdf_load_stackoverflow) |
SG (2) | SG10201704782VA (enrdf_load_stackoverflow) |
TW (1) | TWI743135B (enrdf_load_stackoverflow) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9388494B2 (en) | 2012-06-25 | 2016-07-12 | Novellus Systems, Inc. | Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region |
US9617638B2 (en) * | 2014-07-30 | 2017-04-11 | Lam Research Corporation | Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ALD system |
US9793096B2 (en) * | 2014-09-12 | 2017-10-17 | Lam Research Corporation | Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity |
US9738977B1 (en) | 2016-06-17 | 2017-08-22 | Lam Research Corporation | Showerhead curtain gas method and system for film profile modulation |
US10927459B2 (en) | 2017-10-16 | 2021-02-23 | Asm Ip Holding B.V. | Systems and methods for atomic layer deposition |
KR102560283B1 (ko) * | 2018-01-24 | 2023-07-26 | 삼성전자주식회사 | 샤워 헤드를 설계하고 제조하는 장치 및 방법 |
US11241720B2 (en) * | 2018-03-22 | 2022-02-08 | Tel Manufacturing And Engineering Of America, Inc. | Pressure control strategies to provide uniform treatment streams in the manufacture of microelectronic devices |
KR102501472B1 (ko) * | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
JP7205021B2 (ja) * | 2018-05-24 | 2023-01-17 | 東京エレクトロン株式会社 | 気相ラジカルの制御のための複数ゾーンガス噴射 |
US11913113B2 (en) * | 2018-08-22 | 2024-02-27 | Lam Research Corporation | Method and apparatus for modulating film uniformity |
TWI754180B (zh) * | 2018-10-29 | 2022-02-01 | 美商應用材料股份有限公司 | 用於形成薄膜的處理腔室與方法 |
CN109390435B (zh) * | 2018-12-03 | 2024-01-26 | 乐山新天源太阳能科技有限公司 | 用于太阳能电池抗pid设备的氮气和氧气单向混合装置 |
KR102666133B1 (ko) * | 2019-01-14 | 2024-05-17 | 삼성전자주식회사 | 초임계 건조 장치 및 그를 이용한 기판 건조방법 |
SG11202109797SA (en) * | 2019-03-11 | 2021-10-28 | Lam Res Corp | Apparatus for cleaning plasma chambers |
JP7564123B2 (ja) | 2019-04-11 | 2024-10-08 | アプライド マテリアルズ インコーポレイテッド | 処理チャンバ内でのプラズマの高密度化 |
KR20220020820A (ko) * | 2019-05-15 | 2022-02-21 | 어플라이드 머티어리얼스, 인코포레이티드 | 챔버 잔류물들을 감소시키는 방법들 |
WO2020247966A1 (en) * | 2019-06-07 | 2020-12-10 | Lam Research Corporation | Independently adjustable flowpath conductance in multi-station semiconductor processing |
CN114402416A (zh) | 2019-07-17 | 2022-04-26 | 朗姆研究公司 | 用于衬底处理的氧化分布调节 |
KR20220093150A (ko) * | 2019-11-01 | 2022-07-05 | 도쿄엘렉트론가부시키가이샤 | 기판 세정 장치 및 기판 세정 방법 |
KR102459640B1 (ko) * | 2020-12-21 | 2022-10-27 | 주식회사 테스 | 기판처리장치 |
JP7600018B2 (ja) * | 2021-03-30 | 2024-12-16 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
JP7733210B2 (ja) * | 2021-07-22 | 2025-09-02 | インテグリス・インコーポレーテッド | ウエハ容器微環境内の汚染を低減する吸着剤および方法 |
US12406867B2 (en) * | 2021-11-08 | 2025-09-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Split valve air curtain |
US12110587B2 (en) * | 2021-11-12 | 2024-10-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deposition apparatus and method with EM radiation |
US12235624B2 (en) * | 2021-12-21 | 2025-02-25 | Applied Materials, Inc. | Methods and mechanisms for adjusting process chamber parameters during substrate manufacturing |
Family Cites Families (74)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2075455B (en) | 1980-04-30 | 1984-08-22 | Nippon Steel Corp | Apparatus and method for supporting a metal strip under a static gas pressure |
US5871811A (en) | 1986-12-19 | 1999-02-16 | Applied Materials, Inc. | Method for protecting against deposition on a selected region of a substrate |
DE69222110T2 (de) * | 1991-10-18 | 1998-03-05 | Koninkl Philips Electronics Nv | Verfahren zum Herstellen einer Halbeiteranordnung, wobei auf der Oberfläche einer Halbleiterscheibe aus einem Prozessgas eine Materialschicht abgeschieden wird |
US6002109A (en) | 1995-07-10 | 1999-12-14 | Mattson Technology, Inc. | System and method for thermal processing of a semiconductor substrate |
US5892235A (en) | 1996-05-15 | 1999-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus and method for doping |
US6143081A (en) | 1996-07-12 | 2000-11-07 | Tokyo Electron Limited | Film forming apparatus and method, and film modifying apparatus and method |
US6217715B1 (en) | 1997-02-06 | 2001-04-17 | Applied Materials, Inc. | Coating of vacuum chambers to reduce pump down time and base pressure |
DE19852552C2 (de) | 1998-11-13 | 2000-10-05 | Daimler Chrysler Ag | Verfahren zum Betrieb eines im Viertakt arbeitenden Verbrennungsmotors |
US6333272B1 (en) * | 2000-10-06 | 2001-12-25 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
US20020104556A1 (en) | 2001-02-05 | 2002-08-08 | Suraj Puri | Controlled fluid flow and fluid mix system for treating objects |
US6902620B1 (en) * | 2001-12-19 | 2005-06-07 | Novellus Systems, Inc. | Atomic layer deposition systems and methods |
US6866255B2 (en) | 2002-04-12 | 2005-03-15 | Xerox Corporation | Sputtered spring films with low stress anisotropy |
US6932871B2 (en) * | 2002-04-16 | 2005-08-23 | Applied Materials, Inc. | Multi-station deposition apparatus and method |
US6890596B2 (en) * | 2002-08-15 | 2005-05-10 | Micron Technology, Inc. | Deposition methods |
KR100520900B1 (ko) * | 2003-03-13 | 2005-10-12 | 주식회사 아이피에스 | Ald 박막증착방법 |
KR100505367B1 (ko) * | 2003-03-27 | 2005-08-04 | 주식회사 아이피에스 | 박막증착용 반응용기 |
US7601223B2 (en) * | 2003-04-29 | 2009-10-13 | Asm International N.V. | Showerhead assembly and ALD methods |
US7699932B2 (en) * | 2004-06-02 | 2010-04-20 | Micron Technology, Inc. | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
WO2006088463A1 (en) * | 2005-02-17 | 2006-08-24 | Selitser Simon I | Atmospheric pressure molecular layer cvd |
KR100673979B1 (ko) | 2005-03-17 | 2007-01-24 | 안강호 | 초미립자 제조장치 및 그 방법 |
KR101218114B1 (ko) | 2005-08-04 | 2013-01-18 | 주성엔지니어링(주) | 플라즈마 식각 장치 |
KR20070098104A (ko) * | 2006-03-31 | 2007-10-05 | 삼성전자주식회사 | 가스커튼을 구비한 박막증착장치 |
US8409351B2 (en) | 2007-08-08 | 2013-04-02 | Sic Systems, Inc. | Production of bulk silicon carbide with hot-filament chemical vapor deposition |
JP2009071017A (ja) * | 2007-09-13 | 2009-04-02 | Nuflare Technology Inc | 気相成長装置及び気相成長方法 |
US20090109595A1 (en) | 2007-10-31 | 2009-04-30 | Sokudo Co., Ltd. | Method and system for performing electrostatic chuck clamping in track lithography tools |
JP4933409B2 (ja) | 2007-11-29 | 2012-05-16 | 株式会社ニューフレアテクノロジー | 半導体製造装置および半導体製造方法 |
KR101417728B1 (ko) | 2008-03-12 | 2014-07-11 | 삼성전자주식회사 | 지르코늄 유기산질화막 형성방법 및 이를 이용하는 반도체장치 및 그 제조방법 |
US20090270849A1 (en) | 2008-03-17 | 2009-10-29 | Arqos Surgical Inc. | Electrosurgical Device and Method |
JP5253933B2 (ja) * | 2008-09-04 | 2013-07-31 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置、成膜方法及び記憶媒体 |
DE102008049494A1 (de) | 2008-09-27 | 2010-04-08 | Xtreme Technologies Gmbh | Verfahren und Anordnung zum Betreiben von plasmabasierten kurzwelligen Strahlungsquellen |
JP5107285B2 (ja) | 2009-03-04 | 2012-12-26 | 東京エレクトロン株式会社 | 成膜装置、成膜方法、プログラム、およびコンピュータ可読記憶媒体 |
CN102087955B (zh) | 2009-12-04 | 2012-10-31 | 中芯国际集成电路制造(上海)有限公司 | 改善等离子体工艺中反应腔室内部颗粒状况的方法 |
CN102136410B (zh) | 2010-01-27 | 2013-04-10 | 中芯国际集成电路制造(上海)有限公司 | 用于半导体工艺腔的清洁方法 |
US9028924B2 (en) * | 2010-03-25 | 2015-05-12 | Novellus Systems, Inc. | In-situ deposition of film stacks |
US8728956B2 (en) | 2010-04-15 | 2014-05-20 | Novellus Systems, Inc. | Plasma activated conformal film deposition |
US8637411B2 (en) | 2010-04-15 | 2014-01-28 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
US8956983B2 (en) | 2010-04-15 | 2015-02-17 | Novellus Systems, Inc. | Conformal doping via plasma activated atomic layer deposition and conformal film deposition |
US9611544B2 (en) | 2010-04-15 | 2017-04-04 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
KR101772723B1 (ko) | 2010-06-28 | 2017-08-29 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 방법 |
TWI590335B (zh) | 2010-08-18 | 2017-07-01 | 半導體能源研究所股份有限公司 | 膜形成設備及膜形成方法 |
CN102031498B (zh) * | 2010-12-17 | 2016-05-18 | 中微半导体设备(上海)有限公司 | 用于iii-v族薄膜生长反应室的基片支撑座、其反应室及工艺处理方法 |
EP2481833A1 (en) * | 2011-01-31 | 2012-08-01 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Apparatus for atomic layer deposition |
US9695510B2 (en) * | 2011-04-21 | 2017-07-04 | Kurt J. Lesker Company | Atomic layer deposition apparatus and process |
NL2006962C2 (nl) * | 2011-06-17 | 2012-12-18 | Draka Comteq Bv | Inrichting en werkwijze voor het vervaardigen van een optische voorvorm. |
KR101552127B1 (ko) | 2012-02-07 | 2015-09-10 | 미쯔비시 레이온 가부시끼가이샤 | 횡형 열처리장치 |
KR101430657B1 (ko) * | 2012-05-29 | 2014-09-23 | 주식회사 에스에프에이 | 원자층 증착장치 |
KR101832404B1 (ko) * | 2012-06-22 | 2018-02-26 | 주식회사 원익아이피에스 | 가스분사장치 및 기판처리장치 |
US9388494B2 (en) * | 2012-06-25 | 2016-07-12 | Novellus Systems, Inc. | Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region |
JP5953994B2 (ja) * | 2012-07-06 | 2016-07-20 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
US20140044889A1 (en) | 2012-08-10 | 2014-02-13 | Globalfoundries Inc. | Methods of making stressed material layers and a system for forming such layers |
KR20140033911A (ko) | 2012-09-11 | 2014-03-19 | 에이에스엠 아이피 홀딩 비.브이. | 증착 장치 및 증착 방법 |
TWI480417B (zh) * | 2012-11-02 | 2015-04-11 | Ind Tech Res Inst | 具氣幕之氣體噴灑裝置及其薄膜沉積裝置 |
US9399228B2 (en) | 2013-02-06 | 2016-07-26 | Novellus Systems, Inc. | Method and apparatus for purging and plasma suppression in a process chamber |
TWI624560B (zh) | 2013-02-18 | 2018-05-21 | 應用材料股份有限公司 | 用於原子層沉積的氣體分配板及原子層沉積系統 |
US8940646B1 (en) | 2013-07-12 | 2015-01-27 | Lam Research Corporation | Sequential precursor dosing in an ALD multi-station/batch reactor |
US20150030766A1 (en) * | 2013-07-25 | 2015-01-29 | Novellus Systems, Inc. | Pedestal bottom clean for improved fluorine utilization and integrated symmetric foreline |
WO2015023945A1 (en) | 2013-08-16 | 2015-02-19 | Applied Materials, Inc. | Elongated capacitively coupled plasma source for high temperature low pressure environments |
KR102271731B1 (ko) | 2013-11-26 | 2021-06-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 배치 프로세싱을 위한 경사진 플레이트 및 사용 방법들 |
JP6616070B2 (ja) | 2013-12-01 | 2019-12-04 | ユージェヌス インコーポレイテッド | 誘電性複合体構造の作製方法及び装置 |
US9514933B2 (en) | 2014-01-05 | 2016-12-06 | Applied Materials, Inc. | Film deposition using spatial atomic layer deposition or pulsed chemical vapor deposition |
CN105917445B (zh) | 2014-01-13 | 2020-05-22 | 应用材料公司 | 具有空间原子层沉积的自对准式双图案化 |
KR102135740B1 (ko) | 2014-02-27 | 2020-07-20 | 주식회사 원익아이피에스 | 기판 처리 장치 및 기판 처리 방법 |
US9336997B2 (en) | 2014-03-17 | 2016-05-10 | Applied Materials, Inc. | RF multi-feed structure to improve plasma uniformity |
TW201610215A (zh) | 2014-03-27 | 2016-03-16 | 應用材料股份有限公司 | 用於低熱預算處理的循環尖峰退火化學曝露 |
WO2015161225A1 (en) * | 2014-04-18 | 2015-10-22 | Applied Materials, Inc. | Apparatus for susceptor temperature verification and methods of use |
US9797042B2 (en) * | 2014-05-15 | 2017-10-24 | Lam Research Corporation | Single ALD cycle thickness control in multi-station substrate deposition systems |
US20150380221A1 (en) | 2014-06-30 | 2015-12-31 | Applied Materials, Inc. | Hole Pattern For Uniform Illumination Of Workpiece Below A Capacitively Coupled Plasma Source |
US9617638B2 (en) | 2014-07-30 | 2017-04-11 | Lam Research Corporation | Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ALD system |
JP6298383B2 (ja) * | 2014-08-19 | 2018-03-20 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
TWI670394B (zh) | 2014-09-10 | 2019-09-01 | 美商應用材料股份有限公司 | 空間原子層沈積中的氣體分離控制 |
US10273578B2 (en) | 2014-10-03 | 2019-04-30 | Applied Materials, Inc. | Top lamp module for carousel deposition chamber |
US20160138160A1 (en) | 2014-11-18 | 2016-05-19 | Lam Research Corporation | Reactive ultraviolet thermal processing of low dielectric constant materials |
US9508547B1 (en) | 2015-08-17 | 2016-11-29 | Lam Research Corporation | Composition-matched curtain gas mixtures for edge uniformity modulation in large-volume ALD reactors |
US9738977B1 (en) | 2016-06-17 | 2017-08-22 | Lam Research Corporation | Showerhead curtain gas method and system for film profile modulation |
-
2016
- 2016-06-17 US US15/186,275 patent/US9738977B1/en active Active
-
2017
- 2017-06-09 JP JP2017113915A patent/JP7171165B2/ja active Active
- 2017-06-12 SG SG10201704782VA patent/SG10201704782VA/en unknown
- 2017-06-12 KR KR1020170072972A patent/KR102333807B1/ko active Active
- 2017-06-12 TW TW106119409A patent/TWI743135B/zh active
- 2017-06-12 SG SG10202012689YA patent/SG10202012689YA/en unknown
- 2017-06-19 CN CN202211279416.2A patent/CN115584488A/zh active Pending
- 2017-06-19 CN CN201710462095.2A patent/CN107523804A/zh active Pending
- 2017-06-19 CN CN202211279459.0A patent/CN115584489A/zh active Pending
- 2017-06-19 CN CN202211279875.0A patent/CN115584490A/zh active Pending
- 2017-06-28 US US15/636,128 patent/US10202691B2/en active Active
-
2021
- 2021-11-26 KR KR1020210166181A patent/KR102396162B1/ko active Active
-
2022
- 2022-05-04 KR KR1020220055269A patent/KR102605484B1/ko active Active
-
2023
- 2023-11-20 KR KR1020230160858A patent/KR102691029B1/ko active Active
-
2024
- 2024-07-29 KR KR1020240100245A patent/KR102744016B1/ko active Active
Also Published As
Publication number | Publication date |
---|---|
CN115584488A (zh) | 2023-01-10 |
CN115584490A (zh) | 2023-01-10 |
KR102396162B1 (ko) | 2022-05-09 |
US9738977B1 (en) | 2017-08-22 |
KR102691029B1 (ko) | 2024-08-01 |
JP7171165B2 (ja) | 2022-11-15 |
US20170362713A1 (en) | 2017-12-21 |
KR102744016B1 (ko) | 2024-12-17 |
KR102605484B1 (ko) | 2023-11-23 |
US10202691B2 (en) | 2019-02-12 |
KR20210150331A (ko) | 2021-12-10 |
KR102333807B1 (ko) | 2021-12-01 |
JP2017224816A (ja) | 2017-12-21 |
KR20170142891A (ko) | 2017-12-28 |
KR20220066008A (ko) | 2022-05-23 |
KR20230164622A (ko) | 2023-12-04 |
CN107523804A (zh) | 2017-12-29 |
CN115584489A (zh) | 2023-01-10 |
SG10202012689YA (en) | 2021-01-28 |
KR20240122380A (ko) | 2024-08-12 |
TWI743135B (zh) | 2021-10-21 |
TW201809342A (zh) | 2018-03-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10202012689YA (en) | Showerhead curtain gas method and system for film profile modulation | |
ZA201900535B (en) | Blockchain implemented method and system | |
HUE050067T2 (hu) | Felületbevonó eljárás és megfelelõ felületbevonó berendezés | |
EP3293993A4 (en) | Method and apparatus for providing profile | |
HUE055219T2 (hu) | Bevonóberendezés és megfelelõ bevonási eljárás | |
EP3345306A4 (en) | Interference phase estimate system and method | |
GB201603692D0 (en) | Fixing apparatus and method | |
PL3059482T3 (pl) | Urządzenie i sposób do powlekania rur | |
EP3255917A4 (en) | Channel detection method and apparatus | |
EP3248417A4 (en) | Method and apparatus for implementing inter-radio-access-technologies for services | |
HUE049135T2 (hu) | Szilikonextrudáló berendezés, és módszer szilikon extrudálására | |
IL273791B (en) | Spectroscopic system and method therefor | |
IL265247A (en) | A method and system for irrigation | |
EP3222571A4 (en) | Metal strip stabilization apparatus and method for manufacturing hot-dipped metal strip using same | |
EP3261556A4 (en) | Wound closure apparatus and method | |
EP3335456A4 (en) | System and method for channel security | |
EP3274781A4 (en) | Method and apparatus for flow regulation | |
SG10201606469QA (en) | System and method for controlling settlement | |
GB2522448B (en) | Apparatus and method for sealing zones or rooms | |
HUE048871T2 (hu) | Bevonóanyag felvitelére szolgáló berendezés és kapcsolódó eljárás | |
GB201609621D0 (en) | A vibropeening system and a method of using the same | |
ZA201801962B (en) | Method and apparatus for can expansion | |
ZA201708323B (en) | Method and systems for treating synthesis gas | |
GB2539483B (en) | Sealing method, apparatus and system | |
EP3294981A4 (en) | Method and system for controlling gas flow |