SG10201607229XA - Crystallization methods - Google Patents
Crystallization methodsInfo
- Publication number
- SG10201607229XA SG10201607229XA SG10201607229XA SG10201607229XA SG10201607229XA SG 10201607229X A SG10201607229X A SG 10201607229XA SG 10201607229X A SG10201607229X A SG 10201607229XA SG 10201607229X A SG10201607229X A SG 10201607229XA SG 10201607229X A SG10201607229X A SG 10201607229XA
- Authority
- SG
- Singapore
- Prior art keywords
- crystallization methods
- crystallization
- methods
- Prior art date
Links
- 238000002425 crystallisation Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161530265P | 2011-09-01 | 2011-09-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201607229XA true SG10201607229XA (en) | 2016-10-28 |
Family
ID=47752087
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201607229XA SG10201607229XA (en) | 2011-09-01 | 2012-08-31 | Crystallization methods |
| SG2014008858A SG2014008858A (en) | 2011-09-01 | 2012-08-31 | Crystallization methods |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2014008858A SG2014008858A (en) | 2011-09-01 | 2012-08-31 | Crystallization methods |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9373511B2 (ko) |
| JP (1) | JP6129837B2 (ko) |
| KR (2) | KR101713662B1 (ko) |
| CN (1) | CN103765564B (ko) |
| SG (2) | SG10201607229XA (ko) |
| TW (2) | TWI590309B (ko) |
| WO (1) | WO2013033637A2 (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI590309B (zh) * | 2011-09-01 | 2017-07-01 | 應用材料股份有限公司 | 結晶化的方法 |
| WO2017120584A1 (en) * | 2016-01-08 | 2017-07-13 | The Trustees Of Columbia University In The City Of New York | Methods and systems for spot beam crystallization |
| CN111479650A (zh) * | 2017-10-13 | 2020-07-31 | 纽约市哥伦比亚大学理事会 | 用于点束和线束结晶的系统和方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3213338B2 (ja) | 1991-05-15 | 2001-10-02 | 株式会社リコー | 薄膜半導体装置の製法 |
| JP3065825B2 (ja) * | 1992-10-21 | 2000-07-17 | 株式会社半導体エネルギー研究所 | レーザー処理方法 |
| JP3669384B2 (ja) * | 1995-08-22 | 2005-07-06 | 独立行政法人理化学研究所 | 半導体基板中へのドーピング層の形成方法 |
| GB9819338D0 (en) * | 1998-09-04 | 1998-10-28 | Philips Electronics Nv | Laser crystallisation of thin films |
| JP2001110723A (ja) * | 1999-10-04 | 2001-04-20 | Matsushita Electric Ind Co Ltd | 多結晶シリコン薄膜の製造方法 |
| JP4472066B2 (ja) * | 1999-10-29 | 2010-06-02 | シャープ株式会社 | 結晶性半導体膜の製造方法、結晶化装置及びｔｆｔの製造方法 |
| JP2001319891A (ja) | 2000-05-10 | 2001-11-16 | Nec Corp | 薄膜処理方法及び薄膜処理装置 |
| JP5201614B2 (ja) * | 2001-07-23 | 2013-06-05 | 株式会社日本製鋼所 | レーザ光の照射方法及びその装置 |
| JP3860444B2 (ja) * | 2001-08-28 | 2006-12-20 | 住友重機械工業株式会社 | シリコン結晶化方法とレーザアニール装置 |
| CN100378919C (zh) * | 2002-10-29 | 2008-04-02 | 住友重机械工业株式会社 | 结晶膜以及利用激光制造结晶膜的方法 |
| US7470602B2 (en) * | 2002-10-29 | 2008-12-30 | Sumitomo Heavy Industries, Ltd. | Crystalline film and its manufacture method using laser |
| TW200616232A (en) * | 2004-08-09 | 2006-05-16 | Adv Lcd Tech Dev Ct Co Ltd | Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film |
| JP2006086447A (ja) * | 2004-09-17 | 2006-03-30 | Sharp Corp | 半導体薄膜の製造方法および半導体薄膜の製造装置 |
| US7645337B2 (en) * | 2004-11-18 | 2010-01-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for creating crystallographic-orientation controlled poly-silicon films |
| US8221544B2 (en) * | 2005-04-06 | 2012-07-17 | The Trustees Of Columbia University In The City Of New York | Line scan sequential lateral solidification of thin films |
| US8148663B2 (en) * | 2007-07-31 | 2012-04-03 | Applied Materials, Inc. | Apparatus and method of improving beam shaping and beam homogenization |
| TWI528418B (zh) | 2009-11-30 | 2016-04-01 | 應用材料股份有限公司 | 在半導體應用上的結晶處理 |
| TWI556284B (zh) * | 2009-12-31 | 2016-11-01 | 紐約市哥倫比亞大學理事會 | 非週期性脈衝連續橫向結晶之系統及方法 |
| TWI590309B (zh) * | 2011-09-01 | 2017-07-01 | 應用材料股份有限公司 | 結晶化的方法 |
-
2012
- 2012-08-15 TW TW101129570A patent/TWI590309B/zh active
- 2012-08-15 TW TW106113879A patent/TWI633587B/zh active
- 2012-08-31 KR KR1020147007164A patent/KR101713662B1/ko active IP Right Grant
- 2012-08-31 CN CN201280041674.5A patent/CN103765564B/zh active Active
- 2012-08-31 SG SG10201607229XA patent/SG10201607229XA/en unknown
- 2012-08-31 US US13/601,069 patent/US9373511B2/en not_active Expired - Fee Related
- 2012-08-31 WO PCT/US2012/053527 patent/WO2013033637A2/en active Application Filing
- 2012-08-31 SG SG2014008858A patent/SG2014008858A/en unknown
- 2012-08-31 JP JP2014528670A patent/JP6129837B2/ja active Active
- 2012-08-31 KR KR1020177005829A patent/KR101888834B1/ko active IP Right Grant
-
2016
- 2016-06-19 US US15/186,499 patent/US10074538B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR101888834B1 (ko) | 2018-08-16 |
| TWI633587B (zh) | 2018-08-21 |
| US20160293414A1 (en) | 2016-10-06 |
| US9373511B2 (en) | 2016-06-21 |
| SG2014008858A (en) | 2014-03-28 |
| KR20140060536A (ko) | 2014-05-20 |
| JP6129837B2 (ja) | 2017-05-17 |
| KR20170028450A (ko) | 2017-03-13 |
| TWI590309B (zh) | 2017-07-01 |
| CN103765564A (zh) | 2014-04-30 |
| TW201727712A (zh) | 2017-08-01 |
| WO2013033637A2 (en) | 2013-03-07 |
| US20130055731A1 (en) | 2013-03-07 |
| TW201314745A (zh) | 2013-04-01 |
| JP2014528162A (ja) | 2014-10-23 |
| WO2013033637A3 (en) | 2013-04-25 |
| KR101713662B1 (ko) | 2017-03-08 |
| CN103765564B (zh) | 2016-09-21 |
| US10074538B2 (en) | 2018-09-11 |
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