SG10201606180YA - Photomask Blank And Method For Preparing Photomask - Google Patents
Photomask Blank And Method For Preparing PhotomaskInfo
- Publication number
- SG10201606180YA SG10201606180YA SG10201606180YA SG10201606180YA SG10201606180YA SG 10201606180Y A SG10201606180Y A SG 10201606180YA SG 10201606180Y A SG10201606180Y A SG 10201606180YA SG 10201606180Y A SG10201606180Y A SG 10201606180YA SG 10201606180Y A SG10201606180Y A SG 10201606180YA
- Authority
- SG
- Singapore
- Prior art keywords
- photomask
- preparing
- blank
- photomask blank
- preparing photomask
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015147819 | 2015-07-27 | ||
JP2016100228A JP6564734B2 (ja) | 2015-07-27 | 2016-05-19 | フォトマスクブランク及びフォトマスクの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201606180YA true SG10201606180YA (en) | 2017-02-27 |
Family
ID=57950533
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201606180YA SG10201606180YA (en) | 2015-07-27 | 2016-07-26 | Photomask Blank And Method For Preparing Photomask |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6564734B2 (ja) |
KR (1) | KR102052790B1 (ja) |
CN (1) | CN106406022B (ja) |
SG (1) | SG10201606180YA (ja) |
TW (1) | TWI701502B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7027895B2 (ja) * | 2017-02-09 | 2022-03-02 | 信越化学工業株式会社 | フォトマスクブランクの製造方法、及びフォトマスクの製造方法 |
JP7034867B2 (ja) * | 2018-08-31 | 2022-03-14 | 株式会社ニューフレアテクノロジー | 異常判定方法および描画装置 |
JP7037513B2 (ja) * | 2019-02-14 | 2022-03-16 | 株式会社ニューフレアテクノロジー | 描画装置および描画方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61267054A (ja) * | 1985-05-21 | 1986-11-26 | Arubatsuku Seimaku Kk | フオトマスクブランクスのエツチング方法 |
JPS6385553A (ja) | 1986-09-30 | 1988-04-16 | Toshiba Corp | マスク基板およびマスクパタ−ンの形成方法 |
JPH01217349A (ja) * | 1988-02-25 | 1989-08-30 | Dainippon Printing Co Ltd | ブランク板、ブランク板を用いたフォトマスクおよびそれらの製造方法 |
JPH07282962A (ja) * | 1994-04-07 | 1995-10-27 | Hitachi Cable Ltd | フレキシブルシート状ヒータ、その製造方法およびフォトマスク |
JPH08137089A (ja) * | 1994-11-07 | 1996-05-31 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスク、ハーフトーン型位相シフトマスク用ブランク及びハーフトーン型位相シフトマスクの製造方法 |
JP3006558B2 (ja) * | 1997-08-22 | 2000-02-07 | 日本電気株式会社 | フォトマスクの帯電防止方法およびそれに用いる装置 |
JP4686006B2 (ja) | 2000-04-27 | 2011-05-18 | 大日本印刷株式会社 | ハーフトーン位相シフトフォトマスクとハーフトーン位相シフトフォトマスク用ブランクス、及びハーフトーン位相シフトフォトマスクの製造方法 |
JP2003057802A (ja) * | 2001-08-17 | 2003-02-28 | Mitsubishi Electric Corp | フォトマスクの製造方法、それによって得られたフォトマスクおよびマスクパターン寸法の疎密差改善方法 |
JP2003195483A (ja) | 2001-12-28 | 2003-07-09 | Hoya Corp | フォトマスクブランク、フォトマスク、及びそれらの製造方法 |
JP2003195479A (ja) | 2001-12-28 | 2003-07-09 | Hoya Corp | ハーフトーン型位相シフトマスクブランク、及びハーフトーン型位相シフトマスクの製造方法 |
JP3093632U (ja) | 2002-03-01 | 2003-05-16 | Hoya株式会社 | ハーフトーン型位相シフトマスクブランク |
JP4933754B2 (ja) | 2005-07-21 | 2012-05-16 | 信越化学工業株式会社 | フォトマスクブランクおよびフォトマスクならびにこれらの製造方法 |
DE602006021102D1 (de) * | 2005-07-21 | 2011-05-19 | Shinetsu Chemical Co | Photomaskenrohling, Photomaske und deren Herstellungsverfahren |
JP4509050B2 (ja) * | 2006-03-10 | 2010-07-21 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスク |
JP5345333B2 (ja) * | 2008-03-31 | 2013-11-20 | Hoya株式会社 | フォトマスクブランク、フォトマスク及びその製造方法 |
TWI422966B (zh) * | 2009-07-30 | 2014-01-11 | Hoya Corp | 多調式光罩、光罩基底、多調式光罩之製造方法、及圖案轉印方法 |
JP5368392B2 (ja) * | 2010-07-23 | 2013-12-18 | 信越化学工業株式会社 | 電子線用レジスト膜及び有機導電性膜が積層された被加工基板、該被加工基板の製造方法、及びレジストパターンの形成方法 |
JP5606264B2 (ja) * | 2010-10-22 | 2014-10-15 | 信越化学工業株式会社 | フォトマスクブランク |
WO2013046627A1 (ja) * | 2011-09-28 | 2013-04-04 | 凸版印刷株式会社 | 反射型露光用マスクブランクおよび反射型露光用マスク |
JP5788923B2 (ja) * | 2012-03-23 | 2015-10-07 | 富士フイルム株式会社 | 導電性組成物、導電性部材、導電性部材の製造方法、タッチパネルおよび太陽電池 |
US9559333B2 (en) * | 2012-08-21 | 2017-01-31 | Nec Lighting, Ltd. | Organic el lighting panel substrate, method for manufacturing organic el lighting panel substrate, organic el lighting panel, and organic el lighting device |
JP6105367B2 (ja) | 2013-04-24 | 2017-03-29 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画方法 |
JP6229466B2 (ja) * | 2013-12-06 | 2017-11-15 | 信越化学工業株式会社 | フォトマスクブランク |
-
2016
- 2016-05-19 JP JP2016100228A patent/JP6564734B2/ja active Active
- 2016-07-22 KR KR1020160093061A patent/KR102052790B1/ko active IP Right Grant
- 2016-07-26 SG SG10201606180YA patent/SG10201606180YA/en unknown
- 2016-07-26 TW TW105123587A patent/TWI701502B/zh active
- 2016-07-27 CN CN201610597860.7A patent/CN106406022B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
TWI701502B (zh) | 2020-08-11 |
JP2017027020A (ja) | 2017-02-02 |
KR102052790B1 (ko) | 2019-12-05 |
CN106406022B (zh) | 2021-05-11 |
JP6564734B2 (ja) | 2019-08-21 |
TW201719269A (zh) | 2017-06-01 |
KR20170013164A (ko) | 2017-02-06 |
CN106406022A (zh) | 2017-02-15 |
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