SG10201406244QA - Method for ion source component cleaning - Google Patents
Method for ion source component cleaningInfo
- Publication number
- SG10201406244QA SG10201406244QA SG10201406244QA SG10201406244QA SG10201406244QA SG 10201406244Q A SG10201406244Q A SG 10201406244QA SG 10201406244Q A SG10201406244Q A SG 10201406244QA SG 10201406244Q A SG10201406244Q A SG 10201406244QA SG 10201406244Q A SG10201406244Q A SG 10201406244QA
- Authority
- SG
- Singapore
- Prior art keywords
- ion source
- source component
- component cleaning
- cleaning
- ion
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/571,673 US9627180B2 (en) | 2009-10-01 | 2009-10-01 | Method for ion source component cleaning |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201406244QA true SG10201406244QA (en) | 2014-10-30 |
Family
ID=43127180
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201406244QA SG10201406244QA (en) | 2009-10-01 | 2010-09-24 | Method for ion source component cleaning |
Country Status (8)
Country | Link |
---|---|
US (1) | US9627180B2 (fr) |
EP (1) | EP2483906B1 (fr) |
JP (1) | JP5856565B2 (fr) |
KR (1) | KR101770845B1 (fr) |
CN (1) | CN102549705B (fr) |
SG (1) | SG10201406244QA (fr) |
TW (1) | TWI501284B (fr) |
WO (1) | WO2011041223A1 (fr) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100112795A1 (en) * | 2005-08-30 | 2010-05-06 | Advanced Technology Materials, Inc. | Method of forming ultra-shallow junctions for semiconductor devices |
EP1933992B1 (fr) | 2005-08-30 | 2014-09-24 | Advanced Technology Materials, Inc. | Implantation d'ions de bore utilisant des precurseurs alternatifs de bore fluores, et formation de gros hydrures de bore a des fins d'implantation |
JP2011512015A (ja) | 2008-02-11 | 2011-04-14 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 半導体処理システムにおけるイオン源の洗浄 |
US20110021011A1 (en) | 2009-07-23 | 2011-01-27 | Advanced Technology Materials, Inc. | Carbon materials for carbon implantation |
US8598022B2 (en) | 2009-10-27 | 2013-12-03 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
SG10201605310RA (en) | 2009-10-27 | 2016-08-30 | Entegris Inc | Ion implantation system and method |
JP5886760B2 (ja) | 2010-01-14 | 2016-03-16 | インテグリス・インコーポレーテッド | 換気ガス管理システムおよびプロセス |
US8779383B2 (en) | 2010-02-26 | 2014-07-15 | Advanced Technology Materials, Inc. | Enriched silicon precursor compositions and apparatus and processes for utilizing same |
TWI466179B (zh) | 2010-02-26 | 2014-12-21 | Advanced Tech Materials | 用以增進離子植入系統中之離子源的壽命及性能之方法與設備 |
KR20180104171A (ko) * | 2010-09-15 | 2018-09-19 | 프랙스에어 테크놀로지, 인코포레이티드 | 이온 소스의 수명 연장 방법 |
US9159542B2 (en) * | 2010-12-14 | 2015-10-13 | Thermo Finnigan Llc | Apparatus and method for inhibiting ionization source filament failure |
JP5727853B2 (ja) * | 2011-04-28 | 2015-06-03 | 株式会社アルバック | プラズマ生成方法 |
RU2522662C2 (ru) * | 2011-08-03 | 2014-07-20 | Федеральное государственное бюджетное учреждение "Государственный научный центр Российской Федерации - Институт Теоретической и Экспериментальной Физики" (ФГБУ "ГНЦ РФ ИТЭФ") | Способ нерпрерываемого производства пучка ионов карборана с постоянной самоочисткой ионного источника и компонент системы экстракции ионного имплантатора |
SG11201404872SA (en) | 2012-02-14 | 2014-09-26 | Advanced Tech Materials | Carbon dopant gas and co-flow for implant beam and source life performance improvement |
WO2013123140A1 (fr) | 2012-02-14 | 2013-08-22 | Advanced Technology Materials, Inc. | Matériaux et mélanges alternatifs pour réduire à un minimum l'accumulation de phosphore dans des applications d'implantation |
US9190549B2 (en) * | 2012-02-28 | 2015-11-17 | International Business Machines Corporation | Solar cell made using a barrier layer between p-type and intrinsic layers |
CN103785647A (zh) * | 2012-10-26 | 2014-05-14 | 上海华虹宏力半导体制造有限公司 | 离子注入设备自动清洁离子腔体以提高部件寿命的方法 |
JP2014137901A (ja) * | 2013-01-16 | 2014-07-28 | Nissin Ion Equipment Co Ltd | イオン注入装置およびイオン注入装置の運転方法 |
JP5950855B2 (ja) * | 2013-03-19 | 2016-07-13 | 住友重機械イオンテクノロジー株式会社 | イオン注入装置およびイオン注入装置のクリーニング方法 |
KR102306410B1 (ko) | 2013-08-16 | 2021-09-28 | 엔테그리스, 아이엔씨. | 기재내 규소 주입 및 이를 위한 규소 전구체 조성물의 제공 |
CN104511463B (zh) * | 2013-09-30 | 2017-05-31 | 上海品冠塑胶工业有限公司 | 塑料瓶表面同步等离子去油膜装置 |
KR20170004381A (ko) * | 2015-07-02 | 2017-01-11 | 삼성전자주식회사 | 불순물 영역을 포함하는 반도체 장치의 제조 방법 |
CN106611690A (zh) * | 2015-10-22 | 2017-05-03 | 中芯国际集成电路制造(北京)有限公司 | 减少或防止在离子注入机的离子源内形成沉积物的方法 |
CN108369886B (zh) * | 2015-12-27 | 2020-08-14 | 恩特格里斯公司 | 通过在溅射气体混合物中使用痕量原位清洁气体改善离子布植等离子体浸没枪(pfg)性能 |
US10161034B2 (en) | 2017-04-21 | 2018-12-25 | Lam Research Corporation | Rapid chamber clean using concurrent in-situ and remote plasma sources |
WO2019118121A1 (fr) | 2017-12-15 | 2019-06-20 | Entegris, Inc. | Procédés et ensembles utilisant des gaz contenant du flourine et des gaz inertes pour une opération de pistolet à plasma (pfg) |
CN113663988B (zh) * | 2018-10-18 | 2023-09-05 | 汉辰科技股份有限公司 | 清理离子布植机内部氟化表面的方法及装置 |
US10923309B2 (en) * | 2018-11-01 | 2021-02-16 | Applied Materials, Inc. | GeH4/Ar plasma chemistry for ion implant productivity enhancement |
CN111360004B (zh) * | 2018-12-25 | 2022-09-16 | 东莞新科技术研究开发有限公司 | 一种离子刻蚀机反应腔清洗方法 |
US20210319989A1 (en) * | 2020-04-13 | 2021-10-14 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
CN111627797B (zh) * | 2020-06-08 | 2022-06-10 | 中国电子科技集团公司第二十四研究所 | 一种提高半导体芯片键合可靠性的处理方法 |
CN115672874A (zh) * | 2021-07-30 | 2023-02-03 | 江苏鲁汶仪器股份有限公司 | 一种等离子体处理方法 |
US20230073011A1 (en) * | 2021-09-03 | 2023-03-09 | Applied Materials, Inc. | Shutter disk for physical vapor deposition (pvd) chamber |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6110838A (en) * | 1994-04-29 | 2000-08-29 | Texas Instruments Incorporated | Isotropic polysilicon plus nitride stripping |
JP3457457B2 (ja) | 1996-03-15 | 2003-10-20 | 株式会社東芝 | 洗浄機能付き荷電ビーム装置 |
US5943594A (en) * | 1997-04-30 | 1999-08-24 | International Business Machines Corporation | Method for extended ion implanter source lifetime with control mechanism |
US5940724A (en) * | 1997-04-30 | 1999-08-17 | International Business Machines Corporation | Method for extended ion implanter source lifetime |
US6135128A (en) * | 1998-03-27 | 2000-10-24 | Eaton Corporation | Method for in-process cleaning of an ion source |
US6221169B1 (en) * | 1999-05-10 | 2001-04-24 | Axcelis Technologies, Inc. | System and method for cleaning contaminated surfaces in an ion implanter |
TWI291201B (en) * | 2000-07-18 | 2007-12-11 | Showa Denko Kk | Cleaning gas for semiconductor production equipment |
JP2002100618A (ja) | 2000-07-18 | 2002-04-05 | Showa Denko Kk | 半導体製造装置のクリーニングガス及びクリーニング方法 |
GB0128913D0 (en) * | 2001-12-03 | 2002-01-23 | Applied Materials Inc | Improvements in ion sources for ion implantation apparatus |
JP2003178986A (ja) | 2001-12-13 | 2003-06-27 | Showa Denko Kk | 半導体製造装置のクリーニングガスおよびクリーニング方法 |
WO2003054247A2 (fr) | 2001-12-13 | 2003-07-03 | Showa Denko K.K. | Gaz de nettoyage pour equipement de production de semi-conducteurs et procede de nettoyage faisant appel a ce gaz |
KR101160642B1 (ko) * | 2003-12-12 | 2012-06-28 | 세미이큅, 인코포레이티드 | 고체로부터 승화된 증기의 유동제어 |
US7791047B2 (en) * | 2003-12-12 | 2010-09-07 | Semequip, Inc. | Method and apparatus for extracting ions from an ion source for use in ion implantation |
US20080223409A1 (en) * | 2003-12-12 | 2008-09-18 | Horsky Thomas N | Method and apparatus for extending equipment uptime in ion implantation |
GB2412488B (en) * | 2004-03-26 | 2007-03-28 | Applied Materials Inc | Ion sources |
US20050260354A1 (en) * | 2004-05-20 | 2005-11-24 | Varian Semiconductor Equipment Associates, Inc. | In-situ process chamber preparation methods for plasma ion implantation systems |
US7581549B2 (en) * | 2004-07-23 | 2009-09-01 | Air Products And Chemicals, Inc. | Method for removing carbon-containing residues from a substrate |
US7819981B2 (en) * | 2004-10-26 | 2010-10-26 | Advanced Technology Materials, Inc. | Methods for cleaning ion implanter components |
US20060130971A1 (en) * | 2004-12-21 | 2006-06-22 | Applied Materials, Inc. | Apparatus for generating plasma by RF power |
US8278222B2 (en) * | 2005-11-22 | 2012-10-02 | Air Products And Chemicals, Inc. | Selective etching and formation of xenon difluoride |
US7531819B2 (en) * | 2005-12-20 | 2009-05-12 | Axcelis Technologies, Inc. | Fluorine based cleaning of an ion source |
US20070178678A1 (en) | 2006-01-28 | 2007-08-02 | Varian Semiconductor Equipment Associates, Inc. | Methods of implanting ions and ion sources used for same |
US20070178679A1 (en) * | 2006-01-28 | 2007-08-02 | Varian Semiconductor Equipment Associates, Inc. | Methods of implanting ions and ion sources used for same |
EP3269843A1 (fr) * | 2006-04-10 | 2018-01-17 | Solvay Fluor GmbH | Procédé de gravure |
SG171606A1 (en) * | 2006-04-26 | 2011-06-29 | Advanced Tech Materials | Cleaning of semiconductor processing systems |
JP2009540533A (ja) | 2006-06-12 | 2009-11-19 | セムイクウィップ・インコーポレーテッド | 蒸発装置 |
US20100012153A1 (en) | 2006-07-27 | 2010-01-21 | Takamitsu Shigemoto | Method of cleaning film forming apparatus and film forming apparatus |
US8013312B2 (en) * | 2006-11-22 | 2011-09-06 | Semequip, Inc. | Vapor delivery system useful with ion sources and vaporizer for use in such system |
KR101562785B1 (ko) | 2007-10-22 | 2015-10-23 | 액셀리스 테크놀러지스, 인크. | 이중 플라즈마 이온 소오스 |
US7700925B2 (en) * | 2007-12-28 | 2010-04-20 | Varian Semiconductor Equipment Associates, Inc. | Techniques for providing a multimode ion source |
US8809800B2 (en) * | 2008-08-04 | 2014-08-19 | Varian Semicoductor Equipment Associates, Inc. | Ion source and a method for in-situ cleaning thereof |
US8263944B2 (en) * | 2008-12-22 | 2012-09-11 | Varian Semiconductor Equipment Associates, Inc. | Directional gas injection for an ion source cathode assembly |
US8003959B2 (en) * | 2009-06-26 | 2011-08-23 | Varian Semiconductor Equipment Associates, Inc. | Ion source cleaning end point detection |
-
2009
- 2009-10-01 US US12/571,673 patent/US9627180B2/en not_active Expired - Fee Related
-
2010
- 2010-09-24 JP JP2012532210A patent/JP5856565B2/ja not_active Expired - Fee Related
- 2010-09-24 CN CN201080043549.9A patent/CN102549705B/zh not_active Expired - Fee Related
- 2010-09-24 EP EP10763258.0A patent/EP2483906B1/fr not_active Not-in-force
- 2010-09-24 WO PCT/US2010/050150 patent/WO2011041223A1/fr active Application Filing
- 2010-09-24 SG SG10201406244QA patent/SG10201406244QA/en unknown
- 2010-09-24 KR KR1020127011129A patent/KR101770845B1/ko active IP Right Grant
- 2010-09-28 TW TW099132837A patent/TWI501284B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2013506962A (ja) | 2013-02-28 |
CN102549705B (zh) | 2015-10-21 |
EP2483906B1 (fr) | 2019-02-13 |
US20110079241A1 (en) | 2011-04-07 |
US9627180B2 (en) | 2017-04-18 |
KR101770845B1 (ko) | 2017-09-05 |
EP2483906A1 (fr) | 2012-08-08 |
KR20120093242A (ko) | 2012-08-22 |
TWI501284B (zh) | 2015-09-21 |
JP5856565B2 (ja) | 2016-02-10 |
TW201128679A (en) | 2011-08-16 |
CN102549705A (zh) | 2012-07-04 |
WO2011041223A1 (fr) | 2011-04-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10201406244QA (en) | Method for ion source component cleaning | |
HRP20150148T1 (en) | Method for processing biomaterials | |
WO2011090666A9 (fr) | Procédés de traitement de l'autisme | |
SG10201710240SA (en) | Process for cleaning wafers | |
PL2601979T3 (pl) | Sposób sterylizacji | |
GB0902619D0 (en) | Cleaning apparatus | |
GB0911099D0 (en) | Processing method | |
ZA201202299B (en) | Method for decreasing immunigenicity | |
EP2516735A4 (fr) | Dispositif de nettoyage | |
GB0913229D0 (en) | Apparatus for bio-automation | |
ZA201106436B (en) | Method for decontaminating surfaces | |
EP2496227A4 (fr) | Procédés pour traiter un syndrome de fibromyalgie | |
PT2096102E (pt) | Processo para a produção de metileno-difenil-diisocianatos | |
PL2526141T3 (pl) | Sposób obróbki powierzchniowej | |
GB201019655D0 (en) | Cleaning apparatus | |
GB0820599D0 (en) | Apparatus for processing crustacaeans | |
GB201017357D0 (en) | Methods for cleaning substrates | |
PL2516074T3 (pl) | Urządzenie do czyszczenia elementów przemysłowych | |
IL222607A0 (en) | Method for disinfecting surfaces | |
HRP20130580T1 (en) | Method for processing bast-fiber materials | |
GB0904417D0 (en) | Apparatus for cleaning surfaces | |
PL2542327T3 (pl) | Proces dla czyszczenia filtrów | |
EG26972A (en) | Method for treating waste | |
GB0804055D0 (en) | Cleaning method | |
GB0910370D0 (en) | Cleaning apparatus |